SHINDENGEN DF30SC3ML

SHINDENGEN
Schottky Rectifiers (SBD)
Dual
OUTLINE DIMENSIONS
DF30SC3ML
Case : STO-220
Unit : mm
30V 30A
FEATURES
● SMT
● Tj150℃
● Low VF=0.45V
● PRRSM avalanche guaranteed
● High current capacity with Small
Package
APPLICATION
● Switching power supply
● DC/DC converter
● Home Appliances, Office Equipment
● Telecommunication
RATINGS
●Absolute Maximum Ratings (If not specified Tc=25℃)
Item
Symbol
Conditions
Storage Temperature
Tstg
Operating Junction Temperature
Tj
Maximum Reverse Voltage
VRM
Repetitive Peak Surge Reverse Voltage
VRRSM Pulse width 0.5ms, duty 1/40
IO
Average Rectified Forward Current
50Hz sine wave, R-load, Rating for each diode Io/2, Tc=119℃
Peak Surge Forward Current
IFSM
50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25℃
Repetitive Peak Surge Reverse Power
P RRSM Pulse width 10μs, Rating of per diode, Tj=25℃
Ratings
-55∼150
150
30
35
30
350
1000
●Electrical Characteristics (If not specified
Item
Symbol
Forward Voltage
VF
Reverse Current
IR
Junction Capacitance
Cj
Thermal Resistance
θjc
Ratings
Unit
Max.0.45
V
Max.10
mA
Typ.820
pF
Max.1.6 ℃/W
Tc=25℃)
Conditions
IF =12.5A, Pulse measurement, Rating of per diode
VR=VRM,
Pulse measurement, Rating of per diode
f=1MHz, V R=10V, Rating of per diode
junction to case
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Unit
℃
℃
V
V
A
A
W
DF30SC3ML
Forward Voltage
Forward Current IF [A]
10
Tc=125°C [MAX]
Tc=125°C [TYP]
Tc=25°C [MAX]
Tc=25°C [TYP]
1
Pulse measurement per diode
0.1
0
0.1
0.2
0.3
0.4
0.5
Forward Voltage VF [V]
0.6
0.7
100
1000
10000
Junction Capacitance Cj [pF]
0.1
10
Junction Capacitance
Reverse Voltage VR [V]
1
DF30SC3ML
f=1MHz
Tc=25°C
TYP
per diode
DF30SC3ML
Reverse Current
1000
Tc=125°C [MAX]
Tc=125°C [TYP]
Reverse Current IR [mA]
100
Tc=100°C [TYP]
10
Tc=75°C [TYP]
1
Tc=50°C [TYP]
0.1
Pulse measurement per diode
0.01
0
5
10
15
20
Reverse Voltage VR [V]
25
30
DF30SC3ML
Reverse Power Dissipation
Reverse Power Dissipation PR [W]
16
14
DC
D=0.05
0.1
12
0.2
0.3
10
8
0.5
6
4
SIN
0.8
2
0
0
5
10
15
20
25
30
Reverse Voltage VR [V]
Tj = Tjmax
0
VR
tp
D=tp /T
T
DF30SC3ML
Forward Power Dissipation
25
Forward Power Dissipation PF [W]
D=0.8
20
0.2
0.05
0.3
SIN
DC
0.5
0.1
15
10
5
0
0
10
20
30
40
50
Average Rectified Forward Current IO [A]
Tj = Tjmax
IO
0
tp
D=tp /T
T
DF30SC3ML
Average Rectified Forward Current IO [A]
50
Derating Curve
DC
D=0.8
40
0.5
SIN
30
0.3
0.2
20
0.1
0.05
10
0
0
20
40
60
80
100
120
140
160
Case Temperature Tc [°C]
VR = VRM/2
IO
0
0
VR
tp
D=tp /T
T
DF30SC3ML
Peak Surge Forward Capability
IFSM
700
10ms 10ms
1 cycle
Peak Surge Forward Current IFSM [A]
600
non-repetitive,
sine wave,
Tj=25°C before
surge current is applied
500
400
300
200
100
0
1
2
5
10
20
Number of Cycles [cycles]
50
100
SBD
Repetitive Surge Reverse Power Derating Curve
120
PRRSM Derating [%]
100
80
60
40
20
0
0
50
100
150
Junction Temperature Tj [°C]
IRP
IR
VR
VRP
0.5IRP
0
tp
PRRSM = IRP × VRP
SBD
Repetitive Surge Reverse Power Capability
PRRSM(t p) / PRRSM(t p=10µs) Ratio
10
1
0.1
1
10
100
Pulse Width t p [µs]
IRP
IR
VR
VRP
0.5IRP
0
tp
PRRSM = IRP × VRP