THREE PHASE DIODE+THYRISTOR DFA75BA80/160 SanRex Power Module, DFA75BA, is complex isolated module which is designed for rash current circuit. 80 It contains six diodes connected in a three phase bridge 32 20 17 18 11 7 6 Module is also isolated type between electorode 50.5MAX 17 0 Module is designed very compactly. Because diode module and thyristor put together. ● This 1 ● This 30 2 configuration, and a thyristor connected to a direct current line. 0 5 6 7 terminal and mounting base. So you can put this 4.0 29 4 3 20 20 93.5MAX 1 Module and other one together in a same fin. 5 22MAX (Application) ● Inverter for AC or DC motor control, Current stabilized 4 3 power supply, Switching power supply. Unit:㎜ 2 ●DIODE ■Maximum Ratings Symbol (Tj=25℃ unless otherwise specified) Item Ratings DFA75BA80 DFA75BA160 Unit VRRM Repetitive Peak Reverse Voltage 800 1600 V VRSM Non-Repetitive Peak Reverse Voltage 960 1700 V Symbol Item Conditions ID Output Current (D.C.) Three phase full wave, Tc=101℃ IFSM Surge forward current 1cycle, 50/60HZ, peak value, non-repetitive Ratings Unit 75 A 910/1000 A Operating Junction Temperature −40 to +150 ℃ Tstg Storage Temperature −40 to +125 ℃ VISO Isolation Breakdown Voltage (R.M.S.) Tj Mounting Torque 2500 V Mounting(M5) Recommended Value 1.5-2.5(15-25) 2.7(28) Terminal(M5) Recommended Value 1.5-2.5(15-25) 2.7(28) N・m (kgf・B) 150 g Ratings Unit Mass A.C. 1minute Typical Value ■Electrical Characteristics Symbol Item IRRM Repetitive Peak Reverse Current,max. Tj=150℃,VR=VRRM VFM Forward Voltage Drop,max. Tj=25℃,IF=75A,Inst. measurement 1.30 V Junction to Case(TOTAL) 0.25 ℃/W 0.10 ℃/W Rth(j-c) Thermal Impedance, max. Rth(c-f) Thermal Impedance, max. SanRex Conditions 8 mA ® 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] DFA75BA80/160 ●THYRISTOR ■Maximum Ratings Symbol (Tj=25℃ unless otherwise specified) Ratings Item DFA75BA80 DFA75BA160 Unit VRRM Repetitive Peak Reverse Voltage 800 1600 V VRSM Non-Repetitive Peak Reverse Voltage 960 1700 V VDRM Repetitive Peak off-State Voltage 800 1600 V Symbol Item Conditions Ratings IT(AV) Average On-State Current Singl phase hulfwave. 180° condution, Tc=99℃ ITSM Surge On-State Current 1cycle, 50/60HZ, peak value, non-repetitive I2t I2t Unit 75 A A 910/1000 4150 A2S Critical Rate of Rise of On-State Current IG=100mA, VD=1/2VDRM, di G /dt=0.1A/μs 150 A/μs VISO Isolation Breakdown Voltage (R.M.S.) A.C. 1minute 2500 V Tj Operating Junction Temperature −40 to +135 ℃ Storage Temperature −40 to +125 ℃ N・m (㎏f・B) di/dt Tstg Mounting Torque Mounting(M5) Recommended Value 1.5-2.5(15-25) 2.7(28) Terminal(M5) Recommended Value 1.5-2.5(15-25) 2.7(28) Mass Typical Value 150 g ■Electrical Characteristics Symbol Ratings Unit IDRM Repetitive Peak Off-State Current,max. Tj=135℃,VD=VDRM 60 mA IRRM Repetitive Peak Reverse Current,max. Tj=135℃,VD=VRRM 60 mA VTM Peak On-State Voltage,max. Tj=25℃,ITM=75A,Inst. measurement 1.20 V IGT Gate Trigger Current,max. VD=6V,IT=1A 70 mA VGT Gate Trigger Voltage,max. VD=6V,IT=1A 3 V dv/dt Critical Rate of Rise of OffState Voltage,min. Tj=125℃,VD=2/3VDRM 500 V/μs Rth(j-c) Thermal Impedance, max. Junction to Case 0.40 ℃/W Rth(c-f) Thermal Impedance, max. Case to Fin 0.10 ℃/W DIODE Maximum Forward Characteristics 500 Forward Current I(A) F Conditions 250 Power Dissipation Pav(W) 1000 Item Max. DIODE Output Current vs. Power Dissipation 200 200 150 100 50 T j=25℃ 20 10 0. 5 Three Phase 100 1. 0 1. 5 2. 0 Forward Voltage Drop V(V) F 2. 5 50 0 0 10 20 30 40 50 60 70 80 Output Current ID(A) SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] DIODE Output Current vs. Allowable case Temperature 150 Three Phase 140 Surge Forward Current Rating (Non-Repetitive) 1200 Surge Forward Current IFSM(A) Per one element 1000 130 120 110 100 90 80 0 10 20 30 40 50 60 70 800 60Hz 600 50Hz 400 S i ng l ephaseha l fwave Start T j=25℃ start 200 0 1 80 2 5 Transient Thermal Impedance θj-c(℃/W) DIODE Transient Thermal Impedance Gate Characteristics 5 10 2 5 10−1 2 ー4 5 10 2 5 100 2 Time t(sec) ー3 ー2 5 10 2 5 101 5 10 Av 5 T j=25℃ 2. 0 1 120 100 80 60 40 20 50 Output Current(A) 60 70 80 Transient Thermal Impedance θj-c(℃/W) 140 40 we ( r1 0W we ( r3 W) −10℃ ) 25℃ 20 Maximum Gate Non-Trigger Voltage 50 100 200 500 1000 2000 5000 10000 80 60 40 20 10 20 30 40 50 60 70 80 Output Current(A) 160 30 Po Po 135℃ 0 0 2. 5 SCR Output Current vs. Maximum Allowable case Temperature 20 te 2 On-State Voltage Drop VTM(V) 10 Ga te SCR Output Current vs. Power Dissipation 50 1. 5 ge Ga 100 100 1. 0 e ra ak Gate Current(mA) 200 20 Pe Peak Forward Gate Voltage(10V) 10 0. 2 0. 1 10 Maximum ー5 Max. 10 0. 5 20 0. 5 500 Allowable Case Temperature Tc(℃) 100 50 SCR Maximum Forward Characteristics 0 0 50 Junction to Case Power Dissipation Pav(W) On-State Peak Current I(A) T 1000 100 Gate Voltage(V) 100 5 2 10−1 5 2 10−2 5 2 10−3 5 2 10−4 5 2 10−5 ー6 10 2 10−2 2 20 10 Time(Cycles) Output Current ID(A) Peak Gate Current(3A) Allowable Case Temperature Tc(℃) DFA75BA80/160 SCR Transient Thermal Impedance 100 5 2 10−1 5 2 10−2 5 2 10−3 5 2 10−4 5 2 10−5 ー6 10 2 10−2 2 Junction to Case Maximum 5 10ー5 2 5 10−1 2 5 10ー4 2 5 100 2 Time t(sec) 5 10ー3 2 5 101 5 10ー2 SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]