SANREX DFA75BA160

THREE PHASE DIODE+THYRISTOR
DFA75BA80/160
SanRex Power Module, DFA75BA, is complex isolated module
which is designed for rash current circuit.
80
It contains six diodes connected in a three phase bridge
32
20
17
18
11
7
6
Module is also isolated type between electorode
50.5MAX
17
0
Module is designed very compactly. Because
diode module and thyristor put together.
● This
1
● This
30
2
configuration, and a thyristor connected to a direct current line.
0
5
6 7
terminal and mounting base. So you can put this
4.0
29
4
3
20
20
93.5MAX
1
Module and other one together in a same fin.
5
22MAX
(Application)
● Inverter for AC or DC motor control, Current stabilized
4
3
power supply, Switching power supply.
Unit:㎜
2
●DIODE
■Maximum Ratings
Symbol
(Tj=25℃ unless otherwise specified)
Item
Ratings
DFA75BA80
DFA75BA160
Unit
VRRM
Repetitive Peak Reverse Voltage
800
1600
V
VRSM
Non-Repetitive Peak Reverse Voltage
960
1700
V
Symbol
Item
Conditions
ID
Output Current (D.C.)
Three phase full wave, Tc=101℃
IFSM
Surge forward current
1cycle, 50/60HZ, peak value, non-repetitive
Ratings
Unit
75
A
910/1000
A
Operating Junction Temperature
−40 to +150
℃
Tstg
Storage Temperature
−40 to +125
℃
VISO
Isolation Breakdown Voltage (R.M.S.)
Tj
Mounting
Torque
2500
V
Mounting(M5)
Recommended Value 1.5-2.5(15-25)
2.7(28)
Terminal(M5)
Recommended Value 1.5-2.5(15-25)
2.7(28)
N・m
(kgf・B)
150
g
Ratings
Unit
Mass
A.C. 1minute
Typical Value
■Electrical Characteristics
Symbol
Item
IRRM
Repetitive Peak Reverse Current,max.
Tj=150℃,VR=VRRM
VFM
Forward Voltage Drop,max.
Tj=25℃,IF=75A,Inst. measurement
1.30
V
Junction to Case(TOTAL)
0.25
℃/W
0.10
℃/W
Rth(j-c) Thermal Impedance, max.
Rth(c-f) Thermal Impedance, max.
SanRex
Conditions
8
mA
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]
DFA75BA80/160
●THYRISTOR
■Maximum Ratings
Symbol
(Tj=25℃ unless otherwise specified)
Ratings
Item
DFA75BA80
DFA75BA160
Unit
VRRM
Repetitive Peak Reverse Voltage
800
1600
V
VRSM
Non-Repetitive Peak Reverse Voltage
960
1700
V
VDRM
Repetitive Peak off-State Voltage
800
1600
V
Symbol
Item
Conditions
Ratings
IT(AV)
Average On-State Current
Singl phase hulfwave. 180°
condution, Tc=99℃
ITSM
Surge On-State Current
1cycle, 50/60HZ, peak value, non-repetitive
I2t
I2t
Unit
75
A
A
910/1000
4150
A2S
Critical Rate of Rise of On-State Current
IG=100mA,
VD=1/2VDRM,
di G /dt=0.1A/μs
150
A/μs
VISO
Isolation Breakdown Voltage (R.M.S.)
A.C. 1minute
2500
V
Tj
Operating Junction Temperature
−40 to +135
℃
Storage Temperature
−40 to +125
℃
N・m
(㎏f・B)
di/dt
Tstg
Mounting
Torque
Mounting(M5)
Recommended Value 1.5-2.5(15-25)
2.7(28)
Terminal(M5)
Recommended Value 1.5-2.5(15-25)
2.7(28)
Mass
Typical Value
150
g
■Electrical Characteristics
Symbol
Ratings
Unit
IDRM
Repetitive Peak Off-State Current,max.
Tj=135℃,VD=VDRM
60
mA
IRRM
Repetitive Peak Reverse Current,max.
Tj=135℃,VD=VRRM
60
mA
VTM
Peak On-State Voltage,max.
Tj=25℃,ITM=75A,Inst. measurement
1.20
V
IGT
Gate Trigger Current,max.
VD=6V,IT=1A
70
mA
VGT
Gate Trigger Voltage,max.
VD=6V,IT=1A
3
V
dv/dt
Critical Rate of Rise of OffState Voltage,min.
Tj=125℃,VD=2/3VDRM
500
V/μs
Rth(j-c) Thermal Impedance, max.
Junction to Case
0.40
℃/W
Rth(c-f) Thermal Impedance, max.
Case to Fin
0.10
℃/W
DIODE Maximum Forward Characteristics
500
Forward Current I(A)
F
Conditions
250
Power Dissipation Pav(W)
1000
Item
Max.
DIODE Output Current vs. Power Dissipation
200
200
150
100
50
T
j=25℃
20
10
0.
5
Three Phase
100
1.
0
1.
5
2.
0
Forward Voltage Drop V(V)
F
2.
5
50
0
0
10
20
30
40
50
60
70
80
Output Current ID(A)
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]
DIODE Output Current vs.
Allowable case Temperature
150
Three Phase
140
Surge Forward Current Rating
(Non-Repetitive)
1200
Surge Forward Current IFSM(A)
Per one element
1000
130
120
110
100
90
80
0
10
20
30
40
50
60
70
800
60Hz
600
50Hz
400
S
i
ng
l
ephaseha
l
fwave
Start
T
j=25℃ start
200
0
1
80
2
5
Transient Thermal Impedance θj-c(℃/W)
DIODE Transient Thermal Impedance
Gate Characteristics
5 10 2
5 10−1 2
ー4
5 10 2
5 100 2
Time t(sec)
ー3
ー2
5 10 2
5 101
5 10
Av
5
T
j=25℃
2.
0
1
120
100
80
60
40
20
50
Output Current(A)
60
70
80
Transient Thermal Impedance θj-c(℃/W)
140
40
we
(
r1
0W
we
(
r3
W)
−10℃
)
25℃
20
Maximum Gate Non-Trigger Voltage
50 100 200
500 1000 2000
5000 10000
80
60
40
20
10
20
30
40
50
60
70
80
Output Current(A)
160
30
Po
Po
135℃
0
0
2.
5
SCR Output Current vs.
Maximum Allowable case Temperature
20
te
2
On-State Voltage Drop VTM(V)
10
Ga
te
SCR Output Current vs. Power Dissipation
50
1.
5
ge
Ga
100
100
1.
0
e ra
ak
Gate Current(mA)
200
20
Pe
Peak Forward Gate Voltage(10V)
10
0.
2
0.
1
10
Maximum
ー5
Max.
10
0.
5
20
0.
5
500
Allowable Case Temperature Tc(℃)
100
50
SCR Maximum Forward Characteristics
0
0
50
Junction to Case
Power Dissipation Pav(W)
On-State Peak Current I(A)
T
1000
100
Gate Voltage(V)
100
5
2
10−1
5
2
10−2
5
2
10−3
5
2
10−4
5
2
10−5 ー6
10 2
10−2 2
20
10
Time(Cycles)
Output Current ID(A)
Peak Gate Current(3A)
Allowable Case Temperature Tc(℃)
DFA75BA80/160
SCR Transient Thermal Impedance
100
5
2
10−1
5
2
10−2
5
2
10−3
5
2
10−4
5
2
10−5 ー6
10 2
10−2 2
Junction to Case
Maximum
5 10ー5 2
5 10−1 2
5 10ー4 2
5 100 2
Time t(sec)
5 10ー3 2
5 101
5 10ー2
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]