MICROSEMI DMA12

8700 E. Thomas Road
Scottsdale, AZ 85252
(480) 941-6300
TM
IGBTVS
AC LINE
TRANSIENT
VOLTAGE
SUPPRESSOR
Features
(FOR IGBT PROTECTION)
From Load Switching In AC Applications
• Protects
For
120Vac,
and 440Vac Circuits
• Fits Terminal240Vac
Spacing
on Most IGBTs
• Fast Clamping – Subnanosecond
•
These devices will protect your IGBT in applications where it is
used in overload protection or switching ac loads. Transient
voltages produced when switching occurs in the positive one-half
of the cycle are clamped below the destruct level of the IGBT.
Unique low inductance shunt path virtually eliminates L(di/dt)
effects. Available as screened device for high reliability
applications. Includes burn-in and environmental tests.
SC
M BT
IG
Maximum Ratings @ 25°C
peak pulse power dissipation for 120V @ 1.2/50µs
• 60kw
peak pulse power dissipation for 240V @ 1.2/50µs
• 120kw
peak pulse power dissipation for 440V @ 1.2/50µs
• 240kw
and storage -55°C to +150°C
• Operating
path inductance < 20nH
• Shunt
• Duty cycle – .01% max.
1.00
2.54
+
Hole to
fit 8mm
dia. stud
Electrical Characteristics @ 25°C
MICROSEMI
PART NO.
DMA12
DMA24
DMA44
AC rms
OPERATING
VOLTAGE
NOMINAL
Vac
REVERSE
STAND-OFF
NOTE 1
(VWM)
Vdc
BREAKDOWN
VOLTAGE
MIN / MAX
(VBR) NOTE 2
V
MAXIMUM
REVERSE
LEAKAGE
(ID)
µA
MAXIMUM
CLAMPING
VOLTAGE
(VC)
V
MAXIMUM
PEAK PULSE
CURRENT
(IPP) NOTE 3
A
120
240
440
175
350
640
200 / 225
400 / 450
735 / 900
5
5
5
280
560
1120
200
200
200
Notes:
1.Will withstand high-line conditions of 15% above nominal
voltage.
2.Test current @ 10 mA.
3.Pulse waveform – 1.2 / 50 µs.
0.5
1.25
d
0.5
1.25
.375
.952
2.00
5.08
Dimensions: inches/centimeters
d – Terminals accommodate
23 -28 mm spacing
CASE: Molded plastic, meets UL 94V-O
POLARITY: Cathode marked with +
INDUCTANCE: Less than 20 nH
TERMINALS: Corrosion resistant with hole spacings
to accommodate most high power IGBTs
n Santa Ana: (714) 979-8220 n Scottscale: (602) 941-6300 n Colorado: (303) 469-2161 n Watertown: (617) 926-0404 n Chatsworth: (818) 701-4933
n Sertech Labs: (617) 924-9280 n Ireland: (353) 65-40044 n Bombay: (91) 22-832-002 n Hong Kong: (852) 2692-1202
Data Sheet MSC0294A 6/3/97
TM
Application Notes for
IGBTVS
Microsemi’s IGBTVS protector is intended for transients produced during load switching with a duty cycle not
to exceed .01%. For protecting against transients produced when IGBTs are applied as ac power switches and
over current protectors. Stored energy in the line and load produces damaging transient voltages during power
down or fault interrupt. Microsemi’s IGBTVS transient suppressor protects from nanosecond rise transients
with surge currents to 200A, 1.5/50µs. Typical application on a 3 B power line is illustrated below.
TM
TM
1. CONCEPT
TVS
LINE R & L
ac POWER FROM
SERVICE ENTRY
TO
LOAD
IGBT
2. DETAILS OF SINGLE PHASE PROTECTION
CONTROL
MODULE
IGBTVSTM
LINE R & L
IGBT
AC
LINE
IN
IGBT
LOAD
GATE DRIVE
3. COMPOSITE 3 PHASE PROTECTION
Each control module contains IGBTs,
gate drive and two IGBTVSTM as
illustrated by #2 above
B1
AC IN B2
B3
LINE R & L
LINE R & L
LOAD
LINE R & L