ESAD39M(C,N,D) (10A) (400V to 600V / 10A) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 +0.2 20 Min 1.6 ±0.3 1.1 —0.1 5.45 ±0.2 Features Insulated package by fully molding Super high speed switching Low VF in turn on ±0.3 21.5 5.5 ±0.2 2.3 ±0.2 2.1±0.3 5.45 ±0.2 5.5 ø3.2 ±0.2 9.3 ±0.3 FAST RECOVERY DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain 3. Source JEDEC EIAJ Connection diagram High reliability 2 Applications ESAD39M- C 1 ESAD39M- N 1 ESAD39M- D 1 3 2 High speed power switching 3 2 Maximum ratings and characteristics 3 Absolute maximum ratings Item Symbol Rating Conditions -04 -06 Unit Repetitive peak reverse voltage VRRM 400 600 V Non-repetitive peak reverse voltage VRSM 400 600 V Isolating voltage Viso Terminals-to-case, AC. 1min. Average output current IO Surge current IFSM Operating junction temperature Storage temperature 1500 V Square wave, duty=1/2, Tc=85°C 10* A Sine wave 10ms 50 A Tj -40 to +150 °C Tstg -40 to +150 °C *Average forward current of centertap full wave connection Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Symbol Conditions Forward voltage drop VFM IFM=4A Reverse current IRRM VR=VRRM Reverse recovery time t rr IF=0.1A, IR=0.2A, Irec=0.05A Thermal resistance Rth(j-c) Junction to case Max. 2.5 Unit V 100 µA 50 ns 2.5 °C/W ESAD39M(C,N,D)(10A) (400V to 600V / 10A ) Characteristics Reverse characteristics Forward characteristics 30 10 100 5 IF [A] 3 IR 10 [µA] 1 0.5 1 0.3 0.1 0 2 4 0.1 6 0 200 400 600 VR [V] VF [V] Forward power dissipation Output current-case temperature 20 140 15 120 Tc W F 10 [W] [°C] 100 80 5 60 0 0 2 4 6 8 10 0 2 4 Io [A] 6 8 Io [A] Junction capacitance characteristics Surge capability 100 100 50 50 30 Cj [pF] 10 IFSM 30 [A] 5 10 3 5 1 3 5 10 30 50 VR [V] 100 300 1 3 5 [time] (at 50Hz) 10 10 ESAD39M(C,N,D)(10A) (400V to 600V / 10A ) Transient thermal impedance 101 [°C/W] 100 10-1 10-3 10-2 10-1 t [sec.] 100 101 102