ESJA18 (8kV/5mA) Outline Drawings HIGH VOLTAGE DIODE ESJA18 is high reliability resin molded type high voltage diode in small size package which is sealed (a multilayed mesa type silicon chip) by epoxy resin. Cathode Mark Lot No. o 2.5 Features 27 min. Ultra high speed switching Low VF High surge resisitivity for CRT discharge High reliability design Ultra small pakage 6.5 o 0.5 27 min. Cathode Mark Type Mark Applications ESJA18-08 Rectification for CRT display monitor high voltage power supply (FBT:Flyback Transformer) Maximum Ratings and Characteristics Absolute Maximum Ratings Items Symbols Condition Ratings Units Repetitive Peak Reverse Voltage VRRM 8 kV Average Output Current IO 5 mA Surge Current IFSM Ta=25°C,Resistive Load 0.5 A Junction Temperature Tj 10mS Sine-half wave peak value Allowable Operation Case Temperature Storage Temperature 120 °C Tc 100 °C T stg -40 to +120 °C Retings Units 28 V Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Conditions Maximum Forward Voltage Drop VF IF=10mA Maximum Reverse Current IR VR=VRRM Maximum Reverse Recovery Time trr Junction Capacitance Cj Ta=25°C,IF=2mA,IR=4mA Ta=25°C,VR=0V,f=1MHz 2 0.045 2 µA µs pF ESJA18 (8kV/5mA) Characteristics 28 1 24 o Tj=100 C 0.1 IF 20 Tj=100 o C o Tj= 25 IR C [ µ A] [mA] 16 0.01 12 Tj= 25 o C 1E-3 8 0 10 20 30 VF 40 0 2 [V] 4 6 8 10 12 V R [kV] Reverse Characteristics Forward Characteristics 1.0 100 o Tj= 25 C I R =100 µ A N=100pcs. o Tj=25 C f=1MHz 0.8 Cj 80 0.6 N 60 [pcs.] [pF] 0.4 40 0.2 0.0 20 0 50 100 V Bias 150 200 [V] Junction Capacitance Characteristics 0 0 4 8 V 16 [kV] 20 24 0.01µF Tj= 25 C N=100pcs. 100 D.U.T 150 kohm 1kohm 80 N 60 100ohm OSCILLO SCOPE [pcs.] 40 20 IF=2mA 1mA 0 0 0.00 28 Avalanche Breakdown Voltage o 120 12 AV 0.02 0.04 trr ( µ s) 0.06 0.08 0.10 IR=4mA Reverse Recovery Time trr