Ultra-Fast-Recovery Rectifier Diodes Electrical Characteristics ( Ta =25°C) Absolute Maximum Ratings Parameter VRM (V) Type No. I F(AV) (A) FMC-G28S Tj (°C) IFSM (A) With Heatsink 50Hz Half-cycle Sinewave Single Shot 3.0 50 Tstg (°C) VF (V) max per chip –40 to +150 800 FMC-G28SL 5.0 IF (A) IR (µA) VR=VRM max IR (H) (mA) VR=VRM Tj=150°C max 3.0 100 1.0 5.0 200 2.0 trr ➁ (ns) (ns) IF /IRP (mA) 70 500/500 3.0 60 Others trr ➀ 35 Rth( j- ) Mass IF /IRP (mA) (°C/ W) (g) 500/1000 4.0 2.1 Fig. A FMC-G28S TC – IF(AV) Characteristics 8 t /T=1/3, Sinewave 4 D.C. t /T=1/2 0 t /T=1/6 2 t /T=1/3, Sinewave t /T=1/2 1 0 100 3 1 2 Average Forward Current IF(AV) (A) 0 I FSM (A) t /T=1/6 t T D.C. Peak Forward Surge Current Tj =150°C Average Forward Current IF(AV) (A) Forward Power Dissipation PF (W) IFSM Rating 50 3 I FSM (A) IF(AV) – PF Characteristics 12 40 30 20 10 0 150 110 120 130 140 Case Temperature Tc (°C) 20ms 1 5 10 Overcurrent Cycles 50 FMC-G28SL TC – IF(AV) Characteristics 15 t /T=1/6 10 5 D.C. t /T=1/2 0 (Unit: mm) (Full-mold) Fig. A 10.0 t /T=1/3 1 40 30 20 10 0 70 90 110 130 Case Temperature Tc (°C) 150 20ms 1 5 10 Overcurrent Cycles 50 4.2 2.8 3.3 4.0 8.4 Flammability: UL94V-0 or Equivalent 2 Sinewave 50 2.6 3.9 2.2 16.9 External Dimensions 3 0 50 5 D.C. t /T=1/6 1.35 0.85 5.08 (13.5) 1 2 3 4 Average Forward Current IF(AV) (A) 0.8 0 4 I FSM (A) t /T=1/3, Sinewave 60 t /T=1/2 Peak Forward Surge Current Tj =150°C t T Average Forward Current IF(AV) (A) Forward Power Dissipation PF (W) IFSM Rating 5 I FSM (A) IF(AV) – PF Characteristics 20 0.45 3