Technische Information / technical information FS100R17KE3 IGBT-Module IGBT-modules Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values ! " # $ % % ! " 3, 3 % : ! " ? ? % " $ @ -./0 12 - &. ) +, &. ) *+, 4. 567 4. 1 18* 9 9 ;)1 % # &'( ) *+, < &. ) +, 4.=> &. ) *+, $ :A6A % " 9 *** -B/0 % CD - Charakteristische Werte / characteristic values ! " # $F % % % % ? % $ @ % % ? % % % 4 ? % # % ! " ? % # @ % " F # % % U V U " % V W % W U V U U U " W W # % : % % % ! $, \ 4 F W W V 9 W W U 9 -B/AI C1* - KB @ <`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a& 4?a& AIb. 1 8 9 < * !D Technische Information / technical information FS100R17KE3 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values : $ " 3 3, % % &'( ) *+, % @ : $ " ? 4d ;)1 @ % -= ) -==> 12 - 4c 1 9 4c=> -< ; ) 1 9 < &'( ) 1 *+, 4d 1 9d -< &'( ) *+, -< &'( ) 1 *+, -c 1< 1<Q 4c ) 1 9< cD ) 8* 9DL -= ) Q -< -B/ ) 1* -< &'( ) *+, -= ) Q -< -B/ ) 1* -< &'( ) 1 *+, 4=> 1** 1J* 9 9 4c ) 1 9< cD ) 8* 9DL -= ) Q -< -B/ ) 1* -< &'( ) *+, -= ) Q -< -B/ ) 1* -< &'( ) 1 *+, KT Q< 8 <* L, L, 4c ) 1 9< cD ) 8* 9DL -= ) Q -< -B/ ) 1* -< &'( ) *+, -= ) Q -< -B/ ) 1* -< &'( ) 1 *+, #TPe 1*<* 2<* [ [ Charakteristische Werte / characteristic values 3 % @ 4c ) 1 4c ) 1 % S " " $ % % % % 9 % 4 F : % @ 9< -B/ ) 9< -B/ ) E 3 AIb. <` < - < Q !D NTC-Widerstand / NTC-thermistor Charakteristische Werte / characteristic values f @ 9 @ &. ) *+, % ijj ijj - % @ a a E &. ) 1 gh +,< ijj ) 8Q N &. ) *+, k D *< "N * * :gh g ) gh E maghnhjU1D&g 1DU Q < 1*!WWo 2 aghnhj l < 2* ! Technische Information / technical information FS100R17KE3 IGBT-Module IGBT-modules Vorläufige Daten preliminary data Modul / module 4 :S % $< ) * O < ) 1 % -p0qr <8 % , S ! 4 9g s " % V " - % "- ! " % @ % E ! ! " " !S " ! " D D " 1 < 1 < ! ! " " !S " ! " D D " 2<* 2<* % ,&4 t * E u % % F @ D < " 9 " F ` E &. ) *+,< $ D $ % V % % % a % | < Q !D 1 @ ..yz//y O 1< &'( 7H^ @ 9 AI.x < % $ & DU _!W VG./ < O DU _!W D vwTPHGP ) 1 F % @ , S v;HGAP ) 1 % % $ D @ 1* +, &'( 6{ 8 1 * +, &GAw 8 1 * +, < J< f * ? @ @ % N ? Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen. This technical information specifies semiconductor devices but guarantees no characteristics. It is valid with the appropriate technical explanations. 3 % Technische Information / technical information FS100R17KE3 IGBT-Module IGBT-modules 9 % % " 4?a& 4?a& U W U 9 % % " 4. ) U-./W &'( ) 1 *+, 200 200 160 140 140 120 120 4. m9o 4. m9o 180 &'( ) *+, &'( ) 1 *+, 160 100 80 60 60 40 40 20 20 u 0,0 % 0,5 % 1,0 " 1,5 2,0 -./ m-o " 4?a& 4?a& 2,5 3,0 3,5 U W U 0 4,0 W U U W W B6ZZ ) 8 N< -./ ) Q -< &'( 100 180 90 &'( ) *+, &'( ) 1 *+, 160 80 140 70 120 60 # m [o 4. m9o 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 -./ m-o 200 100 40 60 30 40 20 20 10 5 6 7 8 9 -B/ m-o 10 11 12 0 13 4 #65 #6ZZ 50 80 0 W W -B/ ) -B/ ) 1*-B/ ) 1 -B/ ) 1 -B/ ) Q-B/ ) - $ 4?a& @ % 4?a& #65 ) U4.W< #6ZZ ) U4.W -B/ ) X1* -< B65 ) 8 N< ) 1 *+, 4. ) U-B/W -./ ) - U U 100 80 0 4?a& 4?a& W 4. ) U-./W -B/ ) 1* - 180 Vorläufige Daten preliminary data 0 25 50 75 100 4. m9o 125 150 175 200 Technische Information / technical information FS100R17KE3 IGBT-Module IGBT-modules $ 4?a& U @ % 4?a& 4 U #65 ) U BW< #6ZZ ) U BW -B/ ) X1* -< 4. ) 1 9< -./ ) Q W & Vorläufige Daten preliminary data F @ 4?a& 4?a& W }AIb. ) U W -< &'( ) 1 *+, 100 1 #65 #6ZZ }AIb. 4?a& 80 0,1 # m [o }AIb. m!D o 60 40 0,01 20 1 Mm!D o Mm o 0 0 $ 5 S "@F 10 15 9 % B mNo 25 4?a& 4?a& 30 35 0,001 0,001 40 U a$~9W U a$~9W \" @ 4c ) U-cW < J2* < 8 0,1 < Q < J < 8* < 1 m o 3 10 U U W W B6ZZ ) 8 N< &'( ) 1 *+, 250 200 225 180 200 160 175 140 150 120 125 80 75 60 50 &'( ) *+, &'( ) 1 *+, 100 100 40 4.< 4.< , 25 0 0,01 3 4c m9o 4. m9o 4. ) U-./W -B/ ) X1* -< 20 8 < * < 1 0 20 0 200 400 600 800 1000 1200 1400 1600 1800 -./ m-o 5 0,0 0,5 1,0 1,5 -c m-o 2,0 2,5 3,0 Technische Information / technical information FS100R17KE3 IGBT-Module IGBT-modules $ 3 @ % #TPe ) U4cW B65 ) 8 N< -./ ) Q U W U $ 3 @ % #TPe ) U BW 4c ) 1 9< -./ ) Q W -< &'( ) 1 *+, 40 40 #TPe -< &'( ) 1 *+, #TPe 30 # m [o 25 # m [o W W 35 30 20 15 25 20 15 10 10 5 5 0 & 0 20 40 60 80 100 120 140 160 180 200 4c m9o F @ 3 }AIb. ) U W 1 }AIb. 3 }AIb. m!D o U U 45 35 0 Vorläufige Daten preliminary data 0,1 1 Mm!D o Mm o 0,01 0,001 0,01 8 < Q < 1 0,1 m o <112 < 8 <1*J < J 1 < 2 < 10 6 0 5 10 15 20 B mNo 25 30 35 40 Technische Information / technical information IGBT-Module IGBT-modules FS100R17KE3 Schaltplan / circuit diagram Gehäuseabmessungen / package outlines 7 Vorläufige Daten preliminary data