GM76C256CL/LL LG Semicon Co.,Ltd. 32,768 WORDS x 8 BIT CMOS STATIC RAM Pin Configuration Description The GM76C256C family is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.6um advanced CMOS technology and operated a single 5.0V supply. Advanced circuit techniques provide both high speed and low power consumption. The Family can support various operating temerature ranges for user flexibility of system design. The Family has Chip select /CS, which allows for device selection and data retention control, and output enable (/OE), which provides fast memory access. Thus it is suitable for high speed and low power applications, particularly where battery back-up is required. . A14 1 28 VCC A12 2 27 /WE A7 3 26 A13 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 /OE A2 8 21 A10 A1 9 20 /CS A0 10 19 I/O7 I/O0 11 18 I/O6 . . Features 12 17 I/O5 I/O2 13 16 I/O4 VSS 14 15 I/O3 (Top View) Block Diagram A0 A1 A2 ........ * High Speed : Fast Access and Cycle Time 55/70ns Max * Low Power Standby and Low Power Operation -Standby : 165uW at TA= -25 ~ 85C (LLE) 110uW at TA= 0 ~ 70C (LL) -Operation : 385mW at Vcc=5.0V + 0.5V * Completely Static RAM : No Clock or Timing strobe required * Power Supply Voltage : 5.0V + 0.5V * Low Data Retention Voltage : 2.0V(Min) * Temperature Range -GM76C256CL/LL : ( 0 ~ 70C) -GM76C256CLE/LLE : (-25 ~ 85C) * Package Type : JEDEC Standard 28-DIP,SOP,TSOP(I) I/O1 9 X Decoder 512 MEMORY CELL ARRAY 512 x 64 x 8 (32K x 8) Address Buffer 64 x 8 6 A13 64 Y Decoder A14 Column Select Pin Description I/O Buffer /WE 33 I/O7 Ground I/O Control I/O6 VSS /OE I/O5 Output Enable Input Chip Select Input Data Input/Output Power Supply I/O4 /OE /CS I/O0-I/O7 VCC I/O3 Address Inputs Write Enable Input 8 Chip Control I/O2 A0-A14 /WE /CS I/O1 Function I/O0 Pin GM76C256CL/LL LG Semicon Absolute Maximum Ratings *1 Symbol Parameter Ambient Temperature under Bias TA Unit 0 ~ 70 C -25 ~ 85 C -65 ~ 150 C 260, 10 (at lead) C,S -0.3 ~ 4.6 V GM76C256CL/LL GM76C256CLE/LLE TSTG Storage Temperature VSOL Soldering Temperature and Time VCC Supply Voltage VIN Input Voltage VI/O Input and Output Voltage PD Rating *2 -0.3 ~ 4.6 V -0.5 ~ VCC + 0.5 V 1.0 W Power Dissipation Notes: 1. Operation at above Absolute Maximum Ratings can adversely affect device reliability. 2. -3.0V at pulse width 50ns Max. Recommended DC Operating Conditions (TA = -25 ~ 85C) GM76C256C Symbol Parameter Unit Min Typ Max VCC Supply Voltage 4.5 5.0 5.5 V VIH Input High Voltage 2.2 - VCC + 0.3 V VIL Input Low Voltage -0.3* - 0.8 V *Note: VIL=-3.0V Min for pulse width less than 50ns. Truth Table /CS /WE /OE Input/Output MODE H X X Hi-Z Not Selected L H L Output Data Read L L X Input Data Write L H H Hi-Z Output Disable *Note: X means "don't care". 34 GM76C256CL/LL LG Semicon DC Electrical Characteristics (VCC=5.0V + 0.5V , TA = -25 ~ 85C) GM76C256C Symbol Parameter Test Conditions Unit Min Typ Max II(L) Input Leakage Current VIN = 0 to VCC -1 - 1 uA IO(L) Output Leakage Current /CS = VIH or /OE = VIH or /WE = VIL, V< VOUT < VCC -1 - 1 uA VOH High Level Output Voltage IOH = -1.0mA 2.4 - - V VOL Low Level Output Voltage IOL = 2.1mA - - 0.4 V ICC Operating Supply Current /CS = VIL, VIN = VIH/VIL, II/O = 0mA - - 10 mA ICC1 Average Operating Current /CS = VIL, VIN = VIH/VIL II/O = 0mA tcycle = Min, cycle - - 70 mA Average Operating Current /CS = VIL, VIN = VIH/VIL II/O = 0mA tcycle = 1us, cycle - - 10 mA - - 1.0 mA 0 to +70C (LL) - - 20 uA -25 to +85C (LLE) - - 30 uA 0 to +70C (L) - - 40 uA -25 to +85C (LE) - - 60 uA ICC2 ICCS1 Standby Current (TTL) ICCS2 Standby Current (CMOS) /CS = VIH /CS < VCC-0.2V(LL) /CS < VCC-0.2V (L) *TYP. Values are measured at 25C, VCC = 5.0V 35 GM76C256CL/LL LG Semicon AC Operating Characteristics (VCC=5.0V + 0.5V , TA = -25 ~ 85C) Read Cycle Symbol Parameter Conditions GM76C256C-55 GM76C256C-70 Unit Min Max Min Max 55 - 70 - ns - 55 - 70 ns - 55 - 70 ns - 25 - 30 ns tRC Read Cycle Time tAA Address Access Time tACS Chip Select Access Time tOE Output Enable Access Time tOH Output Hold Time 10 - 10 - ns tCLZ Chip Selection to Output in Low-Z 10 - 10 - ns tOLZ Output Disable to Output in Low-Z 5 - 5 - ns tCHZ Chip Deselection to Output in High-Z 0 20 0 25 ns tOHZ Output Disable to Output in High-Z 0 20 0 25 ns *1 *2 Write Cycle Symbol Parameter GM76C256C-55 GM76C256C-70 Min Max Min Max Unit tWC Write Cycle Time 55 - 70 - ns tCW Chip Select to End of Write 45 - 60 - ns tAW Address Set-up Time to End of Write 45 - 60 - ns tAS Address Set-up Time 0 - 0 - ns 40 - 50 - ns *1 tWP Write Pulse Width tWR Write Recovery Time 0 - 0 - ns tDW Data to Write Time Overlap 25 - 30 - ns tDH Data Hold Time 0 - 0 - ns tWHZ Write to Output in High-Z 0 20 0 25 ns 5 - 5 - ns tOW *2 Output Active from End of Write *1 Test Conditions. 1. Input pulse level : 0.6V to 2.4V 2. tr = tf = 5ns 3. Input/output timing reference level : 1.5V 4. Output load CL = 100pF + 1TTL Load 36 Conditions *2 Test Conditions. 1. Input pulse level : 0.6V to 2.4V 2. tr = tf = 5ns 3. Input timing reference level : 1.5V 4. Output timing reference level : +/-200mV (the level displacement from stable output voltage level) 5. Output load CL = 5pF + 1TTL Load GM76C256CL/LL LG Semicon Timing Waveforms Read Cycle 1 (Note 1, 2) tRC ADD tAA tOH DOUT PREVIOUS VALID DATA VALID DATA Read Cycle 2 (Note 2) tRC ADD /CS tACS /OE tOE tOLZ tOHZ tCHZ tCLZ DOUT High-Z VALID DATA High-Z Notes: 1. Device is continuously selected. /OE, /CS < VIL. 2. /WE is high for read cycle. 37 GM76C256CL/LL LG Semicon Write Cycle 1 (/WE Controlled) (Note 1, 2) tWC ADD tCW /CS tAW tAS tWR tWP /WE tDW DIN VALID DATA tOW tWHZ DOUT tDH High-Z Notes: 1. The internal write time of the memory is defined by the overlap of /CS low and /WE low. Both signals must be low to initiate a write and either signal can terminate a write by going high. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write. 2. Data I/O is high impedance if /OE = VIH. 38 GM76C256CL/LL LG Semicon Write Cycle 2 (/CS Controlled) (Note 1, 2, 3) tWC ADD tAS tCW /CS tAW tWR tWP /WE tDW DIN DOUT tDH VALID DATA High-Z Notes: 1. The internal write time of the memory is defined by the overlap of /CS low and /WE low. Both signals must be low to initiate a write and either signal can terminate a write by going high. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write. 2. Data I/O is high impedance if /OE = VIH. 3. If /CS goes high simultaneously with /WE high, the output remains in a high impedance state. 39 GM76C256CL/LL LG Semicon Capacitance (f = 1MHZ, TA = 25C) Symbol CIN COUT Parameter Test Conditions Min Max Unit Input Capacitance VI = 0V - 6 pF Output Capacitance VO = 0V - 8 pF *Note: This parameter is sampled and not 100% tested. Data Retention Characteristics (TA = -25 ~ 85C) Symbol VCCR Parameter Data Retention Supply Voltage Test Conditions Min Typ Max Unit /CS > VCCR - 0.2V 2.0 - 5.5 V 0 to +70C (LL) Data Retention Current ICCR -25 to +85C (LLE) 0 to +70C (L) VCC = 3.0V /CS > 2.8V -25 to +85C (LE) tCDR Chip Select to Data Retention Time tR Operation Recovery Time Refer to the figure below *1 - 0.5 - 0.5 *1 10 - 1 *1 15 - 1 *1 20 0 - - ns 5 - - ms 7 uA Notes: 1. Typ, Values are measured at 25C Data Retention Timing Data Retention Mode VCC 4.5V tCDR tR 2.2V VCCR /CS GND /CS > VCCR - 0.2V Note: When retaining data in standby mode, supply voltage can be lowered within a certain range. Read or write cycle cannot be performed while the supply voltage is low. 40 Package Dimensions Unit: Inches (mm) 0 0.050(1.27) MIN 0.065(1.65) MAX 15 o 0.600(15.240) TYP ~ 0.008(0.200) MIN 0.015(0.380) MAX 0.190(4.826) MAX 0.145(3.683) MIN 0.155(3.937) MAX 0.015(0.381) MIN 0.022(0.559) MAX 0.550(13.970) MAX 0.530(13.462) MIN 1.447(36.754) MIN 1.470(37.340) MAX 0.015(0.38) 0.100(2.54) TYP MIN 0.120(3.048) MIN 0.140(3.556) MAX 28 SOP o 0.030(0.76) MIN 0.050(1.27) MAX 0.452(11.48) MIN 0.500(12.70) MAX 0.350(8.89) MAX 0.327(8.31) MIN 0~8 0.004(0.10) MIN 0.012(0.30) MAX 0.710(18.03) MIN 0.101(2.56) MIN 0.762(19.35) MAX 0.106(2.70) MAX 0.012(0.30) MIN 0.020(0.51) MAX 0.050(1.270) TYP 0.004(0.10) MIN 0.006(0.16) MAX 41 GM76C256CL/LL LG Semicon Unit: Inches (mm) 28 TSOP-I #22 #7 #8 0.002(0.05) MIN 0.006(0.15) MAX 0.461(11.70) MIN 0.467(11.86) MAX 0.527(13.30) MIN 0.528(13.50) MAX 0.035(1.2) MIN 0.044(1.0) MAX 0.020(0.6) MIN 0.019(0.4) MAX 42 0.006(0.15) MIN 0.008(0.30) MAX #28 #1 0.022(0.55) TYP 0.313(8.1) MIN 0.317(8.3) MAX #21