CORPORATION GMSD1664 ISSUED DATE :2005/03/04 REVISED DATE : NP N E PITAX IAL PL ANAR T RANS ISTO R Description The GMSD1664 is designed for general purpose amplifier applications. Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Absolute Maximum Ratings at Ta = 25 Parameter Symbol Ratings Tj +150 Tstg -55 ~ +150 Junction Temperature Storage Temperature Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 32 V Emitter to Base Voltage Collector Current at Ta=25 VEBO 5 V IC 1 A PD 500 mW Total Power Dissipation at Ta=25 Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit BVCBO 40 - - V BVCEO 32 - - V IC=1mA BVEBO 5 - - V IE=50uA ICBO - - 500 nA VCE=20V VEB=4V IEBO - - 500 nA VCE(sat) - 0.15 0.4 V 82 - 390 fT - 150 - MHz Cob - 9 - pF hFE Test Conditions IC=50uA IC=500mA, IB=50mA VCE=3V, IC=100mA VCE=5V, IE=-50mA, f=100MHz VCB=10V, IE=0mA, f=1MHz Classification Of hFE Rank P Q R hFE 82-180 120-270 180-390 1/2 CORPORATION ISSUED DATE :2005/03/04 REVISED DATE : Characteristics Curve VCE=3V Cob Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 2/2