GTM GMSD1664

CORPORATION
GMSD1664
ISSUED DATE :2005/03/04
REVISED DATE :
NP N E PITAX IAL PL ANAR T RANS ISTO R
Description
The GMSD1664 is designed for general purpose amplifier applications.
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5
TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Ratings
Tj
+150
Tstg
-55 ~ +150
Junction Temperature
Storage Temperature
Unit
Collector to Base Voltage
VCBO
40
V
Collector to Emitter Voltage
VCEO
32
V
Emitter to Base Voltage
Collector Current at Ta=25
VEBO
5
V
IC
1
A
PD
500
mW
Total Power Dissipation at Ta=25
Characteristics
Symbol
at Ta = 25
Min.
Typ.
Max.
Unit
BVCBO
40
-
-
V
BVCEO
32
-
-
V
IC=1mA
BVEBO
5
-
-
V
IE=50uA
ICBO
-
-
500
nA
VCE=20V
VEB=4V
IEBO
-
-
500
nA
VCE(sat)
-
0.15
0.4
V
82
-
390
fT
-
150
-
MHz
Cob
-
9
-
pF
hFE
Test Conditions
IC=50uA
IC=500mA, IB=50mA
VCE=3V, IC=100mA
VCE=5V, IE=-50mA, f=100MHz
VCB=10V, IE=0mA, f=1MHz
Classification Of hFE
Rank
P
Q
R
hFE
82-180
120-270
180-390
1/2
CORPORATION
ISSUED DATE :2005/03/04
REVISED DATE :
Characteristics Curve
VCE=3V
Cob
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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