LITEON H11D1M

LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
FEATURES
* Current transfer ratio
( CTR : MIN. 20% at IF = 10mA, VCE = 10V )
* High isolation voleage between input and output
( Viso = 5,000 Vrms )
* Very High collector-emitter breakdown voltage
( BVCER = 300V)
* Dual-in-line package :
H11D1 : 1-channel type
* Wide lead spacing package :
H11D1M : 1-channel type
* Surface mounting package :
H11D1S : 1-channel type
* Tape and reel packaging :
H11D1S-TA1
* UL approved ( No. E113898 )
* VDE approved ( No. 094722 )
Part No. : H11D1 ( M, S, S-TA1 )
BNS-OD-C131/A4
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LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
H11D1 :
H11D1M :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
Part No. : H11D1 ( M, S, S-TA1 )
BNS-OD-C131/A4
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LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
OUTLINE DIMENSIONS
H11D1S :
*1. Year date code.
*2. 2-digit work week.
*3. Factory identification mark shall be marked (Z : Taiwan, Y : Thailand, X : China).
Part No. : H11D1 ( M, S, S-TA1 )
BNS-OD-C131/A4
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3 of 9
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
TAPING DIMENSIONS
H11D1S-TA1 :
Description
Tape wide
Pitch of sprocket holes
Distance of compartment
Distance of compartment to compartment
Part No. : H11D1 ( M, S, S-TA1 )
BNS-OD-C131/A4
Symbol
W
P0
F
P2
P1
Dimensions in mm ( inches )
16 ± 0.3 ( .63 )
4 ± 0.1 ( .15 )
7.5 ± 0.1 ( .295 )
2 ± 0.1 ( .079 )
12 ± 0.1 ( .472 )
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LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
ABSOLUTE MAXIMUM RATING
( Ta = 25°C )
PARAMETER
SYMBOL
RATING
UNIT
Forward Current
IF
60
mA
Reverse Voltage
VR
6
V
Power Dissipation
P
100
mW
Collector - Emitter Voltage
VCEO
300
V
Emitter - Base Voltage
VEBO
7
V
Collector - Base Voltage
VCBO
300
V
Emitter - Collector Voltage
VECO
7
V
Collector Current
IC
100
mA
Collector Power Dissipation
PC
150
mW
Ptot
250
mW
Viso
5,000
Vrms
Operating Temperature
Topr
-55 ~ +100
°C
Storage Temperature
Tstg
-55 ~ +150
°C
Tsol
260
°C
INPUT
OUTPUT
Total Power Dissipation
*1 Isolation Voltage
*2 Soldering Temperature
*1. AC For 1 Minute, R.H. = 40 ~ 60%
Isolation voltage shall be measured using the following method.
(1) Short between anode and cathode on the primary side and between collector and
emitter on the secondary side.
(2) The isolation voltage tester with zero-cross circuit shall be used.
(3) The waveform of applied voltage shall be a sine wave.
*2. For 10 Seconds
Part No. : H11D1 ( M, S, S-TA1 )
BNS-OD-C131/A4
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LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
ELECTRICAL - OPTICAL CHARACTERISTICS
( Ta = 25°C )
PARAMETER
INPUT
OUTPUT
*1 CTR =
CONDITIONS
Forward Voltage
VF
—
1.2
1.5
V
IF = 10mA
Reverse Current
IR
—
0.01
10
µA
VR = 6V
Terminal Capacitance
Ct
—
30
250
pF
V=0, f = 1KHz
Collector Dark Current
ICER
—
—
100
nA
VCE=200V
RBE=1MΩ
Collector-Emitter
Breakdown Voltage
BVCER
300
—
—
V
IC=0.1mA, IF=0
RBE=1MΩ
Emitter-Collector
Breakdown Voltage
BVECO
7
—
—
V
IE=10µA
IF=0
IC
2
—
—
mA
*1 Current Transfer Ratio
CTR
20
—
—
%
Collector-Emitter
Saturation Voltage
VCE(sat)
—
0.25
0.4
V
IF=10mA,IC=0.5mA
RBE=1MΩ
Isolation Resistance
Riso
5x1010
—
—
Ω
DC500V
40 ~ 60% R.H.
Floating Capacitance
Cf
—
0.6
—
pF
V=0, f=1MHz
Turn - on Time
t on
—
5
—
µs
Turn - off Time
t off
—
5
—
µs
Collector Current
TRANSFER
CHARACTERISTICS
SYMBOL MIN. TYP. MAX. UNIT
IF=10mA,VCE=10V
RBE=1MΩ
VCC=10V, IC=2mA
RL=100Ω
IC
× 100%
IF
Part No. : H11D1 ( M, S, S-TA1 )
BNS-OD-C131/A4
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LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
CHARACTERISTICS CURVES
Fig.1 Forward Current vs.
Ambient Temperature
Fig.2 Collector Power Dissipation vs.
Ambient Temperature
Collector power dissipation Pc (mW)
Forward current I F (mA)
100
80
60
40
20
0
-55 -25
0
25
50
75
100 125
200
150
100
50
0
-55 -25
o
7mA
3
2
100 C
o
o
80 C
40 C
o
20 C
o
60 C
10
1
1
0
4
2
8 10 12 14 16 18 20
6
0.5 0.7 0.9 1.1
Fig.6 Collector Current vs.
Collector-emitter Voltage
Fig.5 Output Current vs.
Forward Current Curve
10.00
1.3 1.5 1.7 1.9
Forward voltage (V)
Forward current I F (mA)
30
I F= 10mA
VCE= 10V
RBE= 1M
Collector current Ic (mA)
Ice(on)-Normalized output current
100 125
o
0
1.00
0.10
PC (MAX.)
25
25mA
20mA
I F= 30mA
20
15mA
10mA
15
10
5mA
5
0
0.01
1
2
5
10
20
50
Forward current I F (mA)
Part No. : H11D1 ( M, S, S-TA1 )
BNS-OD-C131/A4
75
100
Forward current (mA)
Collector-emitter saturation voltage
V (sat) (V)
4
50
Fig.4 Forward Current vs. Forward
Voltage
Ic= 0.5mA
1mA
3mA
5mA
5
25
Ambient temperature Ta ( C)
Fig.3 Collector-emitter saturation
Voltage vs. Forward current
6
0
o
Ambient temperature Ta ( C)
100
0
2
4
6
8
10
Collector-emitter voltage VCE(V)
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7 of 9
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
CHARACTERISTICS CURVES
Fig.7 Relative Current Transfer Ratio
vs. Ambient Temperature
0.12
I F= 10mA
VCE= 10V
1.0
Collector-emitter saturation voltage
VCE (sat) (V)
Relative current transfer ratio (%)
1.2
Fig.8 Collector-emitter Saturation Voltage
vs. Ambient Temperature
0.8
0.6
0.4
0.2
I F= 20mA
I C= 1mA
0.10
0.08
0.06
0.04
0.02
0
0.00
20
40
60
80
100
40
20
O
100
Fig.10 Response Time vs. Load
Resistance
100
VCE= 200V
Response time ( s)
Collector dark current ICEO (nA)
80
Ambient temperature Ta ( C)
Fig.9 Collector Dark Current vs.
Ambient Temperature
1000
60
O
Ambient temperature Ta ( C)
100
10
VCE= 2V
I C= 2mA
10
tf
tr
td
1
20
40
60
80
1
0.1
100
O
Fig.11 Frequency Response
Test Circuit for Response Time
Vcc
0
VCE= 5V
I C= 2mA
-1
10
1
Load resistance RL (k )
Ambient temperature Ta ( C)
Input
-2
Voltage gain Av (dB)
ts
RD
RL
Input
Output
Output
10%
90%
-3
RL= 10k
-4
1k
100
ts
td
tr
-5
tf
-6
Test Circuit for Frequency Response
-7
Vcc
-8
-9
RD
-10
1
10
100
RL
Output
500
Frequency f (kHz)
Part No. : H11D1 ( M, S, S-TA1 )
BNS-OD-C131/A4
Page :
8 of 9
LITE-ON TECHNOLOGY CORPORATION
Property of LITE-ON Only
RECOMMENDED FOOT PRINT PATTERNS (MOUNT PAD)
Unit : mm
Part No. : H11D1 ( M, S, S-TA1 )
BNS-OD-C131/A4
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