2Gb DDR3 SDRAM
2Gb DDR3 SDRAM
Lead-Free&Halogen-Free
(RoHS Compliant)
H5TQ2G43AFR-xxC
H5TQ2G83AFR-xxC
* Hynix Semiconductor reserves the right to change products or specifications without notice.
Rev. 1.0 / Dec. 2009
1
Revision History
Revision No.
History
Draft Date
0.01
Initial Release
Feb. 2009
0.02
Added IDD Specification
Apr. 2009
0.1
Datasheet version changed
Aug. 2009
1.0
JEDEC Update
Dec. 2009
Rev. 1.0 / Dec. 2009
Remark
2
Description
The H5TQ2G43AFR-xxC, H5TQ2G83AFR-xxC are a 2,147,483,648-bit CMOS Double Data Rate III (DDR3)
Synchronous DRAM, ideally suited for the main memory applications which requires large memory density
and high bandwidth. Hynix 2Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising
and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the
CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising
and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high
bandwidth.
Device Features and Ordering Information
FEATURES
• VDD=VDDQ=1.5V +/- 0.075V
• 8banks
• Fully differential clock inputs (CK, CK) operation
• Average Refresh Cycle (Tcase of 0 oC~ 95 oC)
- 7.8 µs at 0oC ~ 85 oC
- 3.9 µs at 85oC ~ 95 oC
• Differential Data Strobe (DQS, DQS)
• On chip DLL align DQ, DQS and DQS transition with CK
transition
• Auto Self Refresh supported
• DM masks write data-in at the both rising and falling
edges of the data strobe
• JEDEC standard 82ball FBGA(x4/x8)
• All addresses and control inputs except data,
data strobes and data masks latched on the
rising edges of the clock
• Dynamic On Die Termination supported
• Driver strength selected by EMRS
• Asynchronous RESET pin supported
• Programmable CAS latency 6, 7, 8, 9, 10 and (11)
supported
• ZQ calibration supported
• Programmable additive latency 0, CL-1, and CL-2
supported
• Write Levelization supported
• Programmable CAS Write latency (CWL) = 5, 6, 7, 8
• TDQS (Termination Data Strobe) supported (x8 only)
• 8 bit pre-fetch
• Programmable burst length 4/8 with both nibble
sequential and interleave mode
• BL switch on the fly
* This product in compliance with the RoHS directive.
Rev. 1.0 / Dec. 2009
3
ORDERING INFORMATION
Part No.
Configuration
H5TQ2G43AFR-*xxC
512M x 4
H5TQ2G83AFR-*xxC
256M x 8
Package
82ball FBGA
OPERATING FREQUENCY
Speed
Grade
(Marking)
Frequency [MHz]
CL5
CL6
CL7
CL8
-G7
O
O
O
-H9
O
O
O
CL9
CL10
CL11
Remark
(CL-tRCD-tRP)
DDR3-1066 7-7-7
O
O
DDR3-1333 9-9-9
* xx means Speed Bin Grade
Rev. 1.0 / Dec. 2009
4
Package Ballout/Mechanical Dimension
x4 Package Ball out (Top view): 82ball FBGA Package
A
1
2
NC
3
4
5
6
7
8
9
10
11
NC
VSS
VDD
NC
NF
VSS
VDD
B
VSS
VSSQ
DQ0
DM
VSSQ
VDDQ
B
C
VDDQ
DQ2
DQS
DQ1
DQ3
VSSQ
C
D
VSSQ
NF
DQS
VDD
VSS
VSSQ
D
E
VREFDQ
VDDQ
NF
NF
NF
VDDQ
E
F
NC
VSS
RAS
CK
VSS
NC
F
G
ODT
VDD
CAS
CK
VDD
CKE
G
H
NC
CS
WE
A10/AP
ZQ
NC
H
J
VSS
BA0
BA2
NC
VREFCA
VSS
J
K
VDD
A3
A0
A12/BC
BA1
VDD
K
L
VSS
A5
A2
A1
A4
VSS
L
M
VDD
A7
A9
A11
A6
VDD
M
NC
VSS
RESET
A13
A14
A8
VSS
NC
1
2
3
4
8
9
10
11
N
5
6
7
A
N
Note: NF (No Function) - This is applied to balls only used in x4 configuration.
1 2 3 4
8 9 10 11
A
B
C
D
E
F
G
H
J
K
(Top View: See the balls through the Package)
Populated ball
Ball not populated
L
M
N
Rev. 1.0 / Dec. 2009
5
x8 Package Ball out (Top view): 82ball FBGA Package
A
1
2
NC
3
4
5
6
7
8
9
10
11
NC
VSS
VDD
NC
NU/TDQS
VSS
VDD
B
VSS
VSSQ
DQ0
DM/TDQS
VSSQ
VDDQ
B
C
VDDQ
DQ2
DQS
DQ1
DQ3
VSSQ
C
D
VSSQ
DQ6
DQS
VDD
VSS
VSSQ
D
E
VREFDQ
VDDQ
DQ4
DQ7
DQ5
VDDQ
E
F
NC
VSS
RAS
CK
VSS
NC
F
G
ODT
VDD
CAS
CK
VDD
CKE
G
H
NC
CS
WE
A10/AP
ZQ
NC
H
J
VSS
BA0
BA2
NC
VREFCA
VSS
J
K
VDD
A3
A0
A12/BC
BA1
VDD
K
L
VSS
A5
A2
A1
A4
VSS
L
M
VDD
A7
A9
A11
A6
VDD
M
NC
VSS
RESET
A13
A14
A8
VSS
NC
1
2
3
4
8
9
10
11
N
1 2 3 4
5
6
7
A
N
8 9 10 11
A
B
C
D
E
F
G
H
J
K
(Top View: See the balls through the Package)
Populated ball
Ball not populated
L
M
N
Rev. 1.0 / Dec. 2009
6
Pin Functional Description
Symbol
Type
Function
CK, CK
Input
Clock: CK and CK are differential clock inputs. All address and control input signals are
sampled on the crossing of the positive edge of CK and negative edge of CK.
CKE, (CKE0),
(CKE1)
Input
Clock Enable: CKE HIGH activates, and CKE Low deactivates, internal clock signals and
device input buffers and output drivers. Taking CKE Low provides Precharge Power-Down
and Self-Refresh operation (all banks idle), or Active Power-Down (row Active in any
bank).
CKE is asynchronous for Self-Refresh exit. After VREFCA and VREFDQ have become stable
during the power on and initialization sequence, they must be maintained during all
operations (including Self-Refresh). CKE must be maintained high throughout read and
write accesses. Input buffers, excluding CK, CK, ODT and CKE, are disabled during powerdown. Input buffers, excluding CKE, are disabled during Self-Refresh.
CS, (CS0),
(CS1), (CS2),
(CS3)
Input
Chip Select: All commands are masked when CS is registered HIGH.
CS provides for external Rank selection on systems with multiple Ranks.
CS is considered part of the command code.
ODT, (ODT0),
(ODT1)
Input
On Die Termination: ODT (registered HIGH) enables termination resistance internal to the
DDR3 SDRAM. When enabled, ODT is only applied to each DQ, DQS, DQS and DM/TDQS,
NU/TDQS (When TDQS is enabled via Mode Register A11=1 in MR1) signal for x4/x8
configurations. For x16 configuration, ODT is applied to each DQ, DQSU, DQSU, DQSL,
DQSL, DMU, and DML signal. The ODT pin will be ignored if MR1 is programmed to disable
ODT.
RAS.
CAS. WE
Input
Command Inputs: RAS, CAS and WE (along with CS) define the command being entered.
DM, (DMU),
(DML)
Input
Input Data Mask: DM is an input mask signal for write data. Input data is masked when
DM is sampled HIGH coincident with that input data during a Write access. DM is sampled
on both edges of DQS. For x8 device, the function of DM or TDQS/TDQS is enabled by
Mode Register A11 setting in MR1.
BA0 - BA2
Input
Bank Address Inputs: BA0 - BA2 define to which bank an Active, Read, Write or Precharge
command is being applied. Bank address also determines if the mode register or extended
mode register is to be accessed during a MRS cycle.
Input
Address Inputs: Provide the row address for Active commands and the column address for
Read/Write commands to select one location out of the memory array in the respective
bank. (A10/AP and A12/BC have additional functions, see below).
The address inputs also provide the op-code during Mode Register Set commands.
A10 / AP
Input
Auto-precharge: A10 is sampled during Read/Write commands to determine whether
Autoprecharge should be performed to the accessed bank after the Read/Write operation.
(HIGH: Autoprecharge; LOW: no Autoprecharge).A10 is sampled during a Precharge
command to determine whether the Precharge applies to one bank (A10 LOW) or all
banks (A10 HIGH). If only one bank is to be precharged, the bank is selected by bank
addresses.
A12 / BC
Input
Burst Chop: A12 / BC is sampled during Read and Write commands to determine if burst
chop (on-the-fly) will be performed.
(HIGH, no burst chop; LOW: burst chopped). See command truth table for details.
A0 - A15
Rev. 1.0 / Dec. 2009
7
Symbol
Type
Function
Active Low Asynchronous Reset: Reset is active when RESET is LOW, and inactive when
RESET is HIGH. RESET must be HIGH during normal operation.
RESET is a CMOS rail-to-rail signal with DC high and low at 80% and 20% of VDD, i.e.
1.20V for DC high and 0.30V for DC low.
RESET
Input
DQ
Input /
Output
Data Input/ Output: Bi-directional data bus.
Input /
Output
Data Strobe: output with read data, input with write data. Edge-aligned with read data,
centered in write data. The data strobe DQS, DQSL, and DQSU are paired with differential
signals DQS, DQSL, and DQSU, respectively, to provide differential pair signaling to the
system during reads and writes. DDR3 SDRAM supports differential data strobe only and
does not support single-ended.
Output
Termination Data Strobe: TDQS/TDQS is applicable for x8 DRAMs only. When enabled via
Mode Register A11 = 1 in MR1, the DRAM will enable the same termination resistance
function on TDQS/TDQS that is applied to DQS/DQS. When disabled via mode register A11
= 0 in MR1, DM/TDQS will provide the data mask function and TDQS is not used. x4/x16
DRAMs must disable the TDQS function via mode register A11 = 0 in MR1.
DQU, DQL,
DQS, DQS,
DQSU, DQSU,
DQSL, DQSL
TDQS, TDQS
NC
No Connect: No internal electrical connection is present.
NF
No Function
VDDQ
Supply
DQ Power Supply: 1.5 V +/- 0.075 V
VSSQ
Supply
DQ Ground
VDD
Supply
Power Supply: 1.5 V +/- 0.075 V
VSS
Supply
Ground
VREFDQ
Supply
Reference voltage for DQ
VREFCA
Supply
Reference voltage for CA
ZQ
Supply
Reference Pin for ZQ calibration
Note:
Input only pins (BA0-BA2, A0-A15, RAS, CAS, WE, CS, CKE, ODT, DM, and RESET) do not supply termination.
Rev. 1.0 / Dec. 2009
8
ROW AND COLUMN ADDRESS TABLE
2Gb
Configuration
# of Banks
Bank Address
Auto precharge
BL switch on the fly
Row Address
Column Address
Page size 1
512Mb x 4
256Mb x 8
8
BA0 - BA2
A10/AP
A12/BC
A0 - A14
A0 - A9,A11
1 KB
8
BA0 - BA2
A10/AP
A12/BC
A0 - A14
A0 - A9
1 KB
Note1: Page size is the number of bytes of data delivered from the array to the internal sense amplifiers
when an ACTIVE command is registered. Page size is per bank, calculated as follows:
page size = 2 COLBITS * ORG ÷ 8
where COLBITS = the number of column address bits, ORG = the number of I/O (DQ) bits
Rev. 1.0 / Dec. 2009
9
Absolute Maximum Ratings
Absolute Maximum DC Ratings
Absolute Maximum DC Ratings
Symbol
VDD
VDDQ
Parameter
Rating
Units
Notes
Voltage on VDD pin relative to Vss
- 0.4 V ~ 1.975 V
V
1,3
Voltage on VDDQ pin relative to Vss
- 0.4 V ~ 1.975 V
V
1,3
- 0.4 V ~ 1.975 V
V
1
-55 to +100
oC
1, 2
VIN, VOUT Voltage on any pin relative to Vss
TSTG
Storage Temperature
Notes:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement
conditions, please refer to JESD51-2 standard.
3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must not be greater than
0.6XVDDQ,When VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV.
DRAM Component Operating Temperature Range
Temperature Range
Symbol
TOPER
Parameter
Normal Operating Temperature Range
Extended Temperature Range (Optional)
Rating
Units
Notes
0 to 85
oC
1,2
85 to 95
oC
1,3
Notes:
1. Operating Temperature TOPER is the case surface temperature on the center / top side of the DRAM. For measurement conditions, please refer to the JEDEC document JESD51-2.
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the DRAM case temperature must be maintained between 0 - 85oC under all operating conditions.
3. Some applications require operation of the DRAM in the Extended Temperature Range between 85oC and 95oC
case temperature. Full specifications are guaranteed in this range, but the following additional conditions apply:
a. Refresh commands must be doubled in frequency, therefore reducing the Refresh interval tREFI to 3.9 µs. It is
also possible to specify a component with 1X refresh (tREFI to 7.8µs) in the Extended Temperature Range.
Please refer to the DIMM SPD for option availability
b. If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use
the Manual Self-Refresh mode with Extended Temperature Range capability (MR2 A6 = 0b and MR2 A7 = 1b)
or enable the optional Auto Self-Refresh mode (MR2 A6 = 1b and MR2 A7 = 0b).
Rev. 1.0 / Dec. 2009
10
AC & DC Operating Conditions
Recommended DC Operating Conditions
Recommended DC Operating Conditions
Symbol
VDD
VDDQ
Parameter
Rating
Units
Notes
1.575
V
1,2
1.575
V
1,2
Min.
Typ.
Max.
Supply Voltage
1.425
1.500
Supply Voltage for Output
1.425
1.500
Notes:
1. Under all conditions, VDDQ must be less than or equal to VDD.
2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.
Rev. 1.0 / Dec. 2009
11
IDD and IDDQ Specification Parameters and Test Conditions
IDD and IDDQ Measurement Conditions
In this chapter, IDD and IDDQ measurement conditions such as test load and patterns are defined. Figure
1. shows the setup and test load for IDD and IDDQ measurements.
•
IDD currents (such as IDD0, IDD1, IDD2N, IDD2NT, IDD2P0, IDD2P1, IDD2Q, IDD3N, IDD3P, IDD4R,
IDD4W, IDD5B, IDD6, IDD6ET, IDD6TC and IDD7) are measured as time-averaged currents with all
VDD balls of the DDR3 SDRAM under test tied together. Any IDDQ current is not included in IDD currents.
•
IDDQ currents (such as IDDQ2NT and IDDQ4R) are measured as time-averaged currents with all
VDDQ balls of the DDR3 SDRAM under test tied together. Any IDD current is not included in IDDQ currents.
Attention: IDDQ values cannot be directly used to calculate IO power of the DDR3 SDRAM. They can
be used to support correlation of simulated IO power to actual IO power as outlined in Figure 2. In
DRAM module application, IDDQ cannot be measured separately since VDD and VDDQ are using one
merged-power layer in Module PCB.
For IDD and IDDQ measurements, the following definitions apply:
•
”0” and “LOW” is defined as VIN <= VILAC(max).
•
”1” and “HIGH” is defined as VIN >= VIHAC(max).
•
“MID_LEVEL” is defined as inputs are VREF = VDD/2.
•
Timing used for IDD and IDDQ Measurement-Loop Patterns are provided in Table 1.
•
Basic IDD and IDDQ Measurement Conditions are described in Table 2.
•
Detailed IDD and IDDQ Measurement-Loop Patterns are described in Table 3 through Table 10.
•
IDD Measurements are done after properly initializing the DDR3 SDRAM. This includes but is not limited to setting
RON = RZQ/7 (34 Ohm in MR1);
Qoff = 0B (Output Buffer enabled in MR1);
RTT_Nom = RZQ/6 (40 Ohm in MR1);
RTT_Wr = RZQ/2 (120 Ohm in MR2);
TDQS Feature disabled in MR1
•
Attention: The IDD and IDDQ Measurement-Loop Patterns need to be executed at least one time
before actual IDD or IDDQ measurement is started.
•
Define D = {CS, RAS, CAS, WE}:= {HIGH, LOW, LOW, LOW}
•
Define D = {CS, RAS, CAS, WE}:= {HIGH, HIGH, HIGH, HIGH}
Rev. 1.0 / Dec. 2009
12
IDDQ (optional)
IDD
VDD
VDDQ
RESET
CK/CK
DDR3
SDRAM
CKE
CS
RAS, CAS, WE
DQS, DQS
DQ, DM,
TDQS, TDQS
A, BA
ODT
ZQ
VSS
RTT = 25 Ohm
VDDQ/2
VSSQ
Figure 1 - Measurement Setup and Test Load for IDD and IDDQ (optional) Measurements
[Note: DIMM level Output test load condition may be different from above]
Application specific
memory channel
environment
IDDQ
Test Load
Channel
IO Power
Simulation
IDDQ
Simulation
IDDQ
Simulation
Correction
Channel IO Power
Number
Figure 2 - Correlation from simulated Channel IO Power to actual Channel IO Power supported
by IDDQ Measurement
Rev. 1.0 / Dec. 2009
13
Table 1 -Timings used for IDD and IDDQ Measurement-Loop Patterns
Symbol
tCK
DDR3-1066
DDR3-1333
7-7-7
9-9-9
1.875
1.5
Unit
ns
CL
7
9
nCK
nRCD
7
9
nCK
nRC
27
33
nCK
nRAS
20
24
nCK
nRP
7
9
nCK
1KB page size
20
20
nCK
2KB page size
27
30
nCK
1KB page size
4
4
nCK
nFAW
nRRD
6
5
nCK
nRFC -512Mb
2KB page size
48
60
nCK
nRFC-1 Gb
59
74
nCK
nRFC- 2 Gb
86
107
nCK
nRFC- 4 Gb
160
200
nCK
nRFC- 8 Gb
187
234
nCK
Table 2 -Basic IDD and IDDQ Measurement Conditions
Symbol
Description
Operating One Bank Active-Precharge Current
CKE: High; External clock: On; tCK, nRC, nRAS, CL: see Table 1; BL: 8a); AL: 0; CS: High between ACT
IDD0
and PRE; Command, Address, Bank Address Inputs: partially toggling according to Table 3; Data IO:
MID-LEVEL; DM: stable at 0; Bank Activity: Cycling with one bank active at a time: 0,0,1,1,2,2,... (see
Table 3); Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Pattern Details:
see Table 3.
Operating One Bank Active-Precharge Current
CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, CL: see Table 1; BL: 8a); AL: 0; CS: High between
IDD1
ACT, RD and PRE; Command, Address; Bank Address Inputs, Data IO: partially toggling according to
Table 4; DM: stable at 0; Bank Activity: Cycling with on bank active at a time: 0,0,1,1,2,2,... (see Table
4); Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Pattern Details: see
Table 4.
Rev. 1.0 / Dec. 2009
14
Symbol
Description
Precharge Standby Current
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address,
IDD2N
Bank Address Inputs: partially toggling according to Table 5; Data IO: MID_LEVEL; DM: stable at 0;
Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable
at 0; Pattern Details: see Table 5.
Precharge Standby ODT Current
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address,
IDD2NT
Bank Address Inputs: partially toggling according to Table 6; Data IO: MID_LEVEL; DM: stable at 0;
Bank Activity: all banks closed; Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: toggling according to Table 6; Pattern Details: see Table 6.
IDDQ2NT Precharge Standby ODT IDDQ Current
(optional) Same definition like for IDD2NT, however measuring IDDQ current instead of IDD current
Precharge Power-Down Current Slow Exit
CKE: Low; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address,
IDD2P0
Bank Address Inputs: stable at 0; Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: all banks closed;
Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Precharge Power Down
Mode: Slow Exitc)
Precharge Power-Down Current Fast Exit
CKE: Low; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address,
IDD2P1
Bank Address Inputs: stable at 0; Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: all banks closed;
Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Precharge Power Down
Mode: Fast Exitc)
Precharge Quiet Standby Current
IDD2Q
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address,
Bank Address Inputs: stable at 0; Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: all banks closed;
Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0
Active Standby Current
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address,
IDD3N
Bank Address Inputs: partially toggling according to Table 5; Data IO: MID_LEVEL; DM: stable at 0;
Bank Activity: all banks open; Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable
at 0; Pattern Details: see Table 5.
Rev. 1.0 / Dec. 2009
15
Symbol
Description
Active Power-Down Current
IDD3P
CKE: Low; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: stable at 1; Command, Address,
Bank Address Inputs: stable at 0; Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: all banks open;
Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0
IDDQ4R
Operating Burst Read IDDQ Current
(optional) Same definition like for IDD4R, however measuring IDDQ current instead of IDD current
Operating Burst Read Current
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: High between RD; Command,
IDD4R
Address, Bank Address Inputs: partially toggling according to Table 7; Data IO: seamless read data burst
with different data between one burst and the next one according to Table 7; DM: stable at 0; Bank
Activity: all banks open, RD commands cycling through banks: 0,0,1,1,2,2,...(see Table 7); Output Buffer
and RTT: Enabled in Mode Registersb); ODT Signal: stable at 0; Pattern Details: see Table 7.
Operating Burst Write Current
CKE: High; External clock: On; tCK, CL: see Table 1; BL: 8a); AL: 0; CS: High between WR; Command,
IDD4W
Address, Bank Address Inputs: partially toggling according to Table 8; Data IO: seamless read data burst
with different data between one burst and the next one according to Table 8; DM: stable at 0; Bank
Activity: all banks open, WR commands cycling through banks: 0,0,1,1,2,2,...(see Table 8); Output
Buffer and RTT: Enabled in Mode Registersb); ODT Signal: stable at HIGH; Pattern Details: see Table 8.
Burst Refresh Current
CKE: High; External clock: On; tCK, CL, nRFC: see Table 1; BL: 8a); AL: 0; CS: High between REF; Com-
IDD5B
mand, Address, Bank Address Inputs: partially toggling according to Table 9; Data IO: MID_LEVEL; DM:
stable at 0; Bank Activity: REF command every nREF (see Table 9); Output Buffer and RTT: Enabled in
Mode Registersb); ODT Signal: stable at 0; Pattern Details: see Table 9.
Self-Refresh Current: Normal Temperature Range
TCASE: 0 - 85 oC; Auto Self-Refresh (ASR): Disabledd);Self-Refresh Temperature Range (SRT): Normale);
IDD6
CKE: Low; External clock: Off; CK and CK: LOW; CL: see Table 1; BL: 8a); AL: 0; CS, Command, Address,
Bank Address Inputs, Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: Self-Refresh operation; Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: MID_LEVEL
Rev. 1.0 / Dec. 2009
16
Symbol
Description
Self-Refresh Current: Extended Temperature Range (optional)f)
TCASE: 0 - 95 oC; Auto Self-Refresh (ASR): Disabledd);Self-Refresh Temperature Range (SRT): ExtendIDD6ET
ede); CKE: Low; External clock: Off; CK and CK: LOW; CL: see Table 1; BL: 8a); AL: 0; CS, Command,
Address, Bank Address Inputs, Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: Extended Temperature Self-Refresh operation; Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal:
MID_LEVEL
Auto Self-Refresh Current (optional)f)
TCASE: 0 - 95 oC; Auto Self-Refresh (ASR): Enabledd);Self-Refresh Temperature Range (SRT): Normale);
IDD6TC
CKE: Low; External clock: Off; CK and CK: LOW; CL: see Table 1; BL: 8a); AL: 0; CS, Command, Address,
Bank Address Inputs, Data IO: MID_LEVEL; DM: stable at 0; Bank Activity: Auto Self-Refresh operation;
Output Buffer and RTT: Enabled in Mode Registersb); ODT Signal: MID_LEVEL
Operating Bank Interleave Read Current
CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, NRRD, nFAW, CL: see Table 1; BL: 8a), f); AL: CL1; CS: High between ACT and RDA; Command, Address, Bank Address Inputs: partially toggling accord-
IDD7
ing to Table 10; Data IO: read data burst with different data between one burst and the next one
according to Table 10; DM: stable at 0; Bank Activity: two times interleaved cycling through banks (0,
1,...7) with different addressing, wee Table 10; Output Buffer and RTT: Enabled in Mode Registersb);
ODT Signal: stable at 0; Pattern Details: see Table 10.
a) Burst Length: BL8 fixed by MRS: set MR0 A[1,0]=00B
b) Output Buffer Enable: set MR1 A[12] = 0B; set MR1 A[5,1] = 01B; RTT_Nom enable: set MR1 A[9,6,2] = 011B;
RTT_Wr enable: set MR2 A[10,9] = 10B
c) Precharge Power Down Mode: set MR0 A12=0B for Slow Exit or MR0 A12 = 1B for Fast Exit
d) Auto Self-Refresh (ASR): set MR2 A6 = 0B to disable or 1B to enable feature
e) Self-Refresh Temperature Range (SRT): set MR2 A7 = 0B for normal or 1B for extended temperature range
f) Read Burst Type: Nibble Sequential, set MR0 A[3] = 0B
Rev. 1.0 / Dec. 2009
17
Command
CS
RAS
CAS
WE
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
0
ACT
0
0
1
1
0
0
00
0
0
0
0
-
1,2
D, D
1
0
0
0
0
0
00
0
0
0
0
-
D, D
1
1
1
1
0
0
00
0
0
0
0
-
0
0
0
-
0
F
0
-
Cycle
Number
Datab)
Sub-Loop
CKE
CK, CK
Table 3 - IDD0 Measurement-Loop Patterna)
0
3,4
...
nRAS
Static High
toggling
...
repeat pattern 1...4 until nRAS - 1, truncate if necessary
PRE
0
0
1
0
0
0
00
0
repeat pattern 1...4 until nRC - 1, truncate if necessary
1*nRC+0
ACT
1*nRC+1, 2
D, D
1
0
0
0
0
0
00
0
0
F
0
-
1*nRC+3, 4
D, D
1
1
1
1
0
0
00
0
0
F
0
-
0
-
...
1*nRC+nRAS
0
0
1
1
0
0
00
0
repeat pattern 1...4 until 1*nRC + nRAS - 1, truncate if necessary
PRE
0
0
1
0
0
0
00
0
0
...
repeat pattern 1...4 until 2*nRC - 1, truncate if necessary
1
2*nRC
repeat Sub-Loop 0, use BA[2:0] = 1 instead
2
4*nRC
repeat Sub-Loop 0, use BA[2:0] = 2 instead
3
6*nRC
repeat Sub-Loop 0, use BA[2:0] = 3 instead
4
8*nRC
repeat Sub-Loop 0, use BA[2:0] = 4 instead
5
10*nRC
repeat Sub-Loop 0, use BA[2:0] = 5 instead
6
12*nRC
repeat Sub-Loop 0, use BA[2:0] = 6 instead
7
14*nRC
repeat Sub-Loop 0, use BA[2:0] = 7 instead
F
a) DM must be driven LOW all the time. DQS, DQS are MID-LEVEL.
b) DQ signals are MID-LEVEL.
Rev. 1.0 / Dec. 2009
18
Command
CS
RAS
CAS
WE
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
0
ACT
0
0
1
1
0
0
00
0
0
0
0
-
1,2
D, D
1
0
0
0
0
0
00
0
0
0
0
-
D, D
1
1
1
1
0
0
00
0
0
0
0
-
0
0
00000000
0
0
0
-
Cycle
Number
Datab)
Sub-Loop
CKE
CK, CK
Table 4 - IDD1 Measurement-Loop Patterna)
0
3,4
...
nRCD
...
nRAS
Static High
toggling
...
repeat pattern 1...4 until nRCD - 1, truncate if necessary
RD
0
1
0
1
0
0
00
0
0
repeat pattern 1...4 until nRAS - 1, truncate if necessary
PRE
0
0
1
0
0
0
00
0
repeat pattern 1...4 until nRC - 1, truncate if necessary
1*nRC+0
ACT
0
0
1
1
0
0
00
0
0
F
0
-
1*nRC+1,2
D, D
1
0
0
0
0
0
00
0
0
F
0
-
D, D
1
1
1
1
0
0
00
0
0
F
0
-
1*nRC+3,4
...
1*nRC+nRCD
...
1*nRC+nRAS
repeat pattern nRC + 1,...4 until nRC + nRCE - 1, truncate if necessary
RD
0
1
0
1
0
0
00
0
0
F
0
00110011
repeat pattern nRC + 1,...4 until nRC + nRAS - 1, truncate if necessary
PRE
0
0
1
0
0
0
00
0
0
F
...
repeat pattern nRC + 1,...4 until *2 nRC - 1, truncate if necessary
1
2*nRC
repeat Sub-Loop 0, use BA[2:0] = 1 instead
2
4*nRC
repeat Sub-Loop 0, use BA[2:0] = 2 instead
3
6*nRC
repeat Sub-Loop 0, use BA[2:0] = 3 instead
4
8*nRC
repeat Sub-Loop 0, use BA[2:0] = 4 instead
5
10*nRC
repeat Sub-Loop 0, use BA[2:0] = 5 instead
6
12*nRC
repeat Sub-Loop 0, use BA[2:0] = 6 instead
7
14*nRC
repeat Sub-Loop 0, use BA[2:0] = 7 instead
0
-
a) DM must be driven LOW all the time. DQS, DQS are used according to RD Commands, otherwise MID-LEVEL.
b) Burst Sequence driven on each DQ signal by Read Command. Outside burst operation, DQ signals are MID_LEVEL.
Rev. 1.0 / Dec. 2009
19
Static High
CS
RAS
CAS
WE
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
0
D
1
0
0
0
0
0
0
0
0
0
0
-
1
D
1
0
0
0
0
0
0
0
0
0
0
-
2
D
1
1
1
1
0
0
0
0
0
F
0
-
3
D
1
1
1
1
0
0
0
0
0
F
0
-
Cycle
Number
Command
0
toggling
Datab)
Sub-Loop
CKE
CK, CK
Table 5 - IDD2N and IDD3N Measurement-Loop Patterna)
1
4-7
repeat Sub-Loop 0, use BA[2:0] = 1 instead
2
8-11
repeat Sub-Loop 0, use BA[2:0] = 2 instead
3
12-15
repeat Sub-Loop 0, use BA[2:0] = 3 instead
4
16-19
repeat Sub-Loop 0, use BA[2:0] = 4 instead
5
20-23
repeat Sub-Loop 0, use BA[2:0] = 5 instead
6
24-17
repeat Sub-Loop 0, use BA[2:0] = 6 instead
7
28-31
repeat Sub-Loop 0, use BA[2:0] = 7 instead
a) DM must be driven LOW all the time. DQS, DQS are MID-LEVEL.
b) DQ signals are MID-LEVEL.
Static High
CS
RAS
CAS
WE
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
0
D
1
0
0
0
0
0
0
0
0
0
0
-
1
D
1
0
0
0
0
0
0
0
0
0
0
-
2
D
1
1
1
1
0
0
0
0
0
F
0
-
3
D
1
1
1
1
0
0
0
0
0
F
0
-
Cycle
Number
Command
0
toggling
Datab)
Sub-Loop
CKE
CK, CK
Table 6 - IDD2NT and IDDQ2NT Measurement-Loop Patterna)
1
4-7
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 1
2
8-11
repeat Sub-Loop 0, but ODT = 1 and BA[2:0] = 2
3
12-15
repeat Sub-Loop 0, but ODT = 1 and BA[2:0] = 3
4
16-19
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 4
5
20-23
repeat Sub-Loop 0, but ODT = 0 and BA[2:0] = 5
6
24-17
repeat Sub-Loop 0, but ODT = 1 and BA[2:0] = 6
7
28-31
repeat Sub-Loop 0, but ODT = 1 and BA[2:0] = 7
a) DM must be driven LOW all the time. DQS, DQS are MID-LEVEL.
b) DQ signals are MID-LEVEL.
Rev. 1.0 / Dec. 2009
20
Command
CS
RAS
CAS
WE
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
0
RD
0
1
0
1
0
0
00
0
0
0
0
00000000
1
D
1
0
0
0
0
0
00
0
0
0
0
-
2,3
D,D
1
1
1
1
0
0
00
0
0
0
0
-
4
RD
0
1
0
1
0
0
00
0
0
F
0
00110011
D
1
0
0
0
0
0
00
0
0
F
0
-
D,D
1
1
1
1
0
0
00
0
0
F
0
-
Cycle
Number
Datab)
Sub-Loop
CKE
CK, CK
Table 7 - IDD4R and IDDQ24RMeasurement-Loop Patterna)
0
Static High
toggling
5
6,7
1
8-15
repeat Sub-Loop 0, but BA[2:0] = 1
2
16-23
repeat Sub-Loop 0, but BA[2:0] = 2
3
24-31
repeat Sub-Loop 0, but BA[2:0] = 3
4
32-39
repeat Sub-Loop 0, but BA[2:0] = 4
5
40-47
repeat Sub-Loop 0, but BA[2:0] = 5
6
48-55
repeat Sub-Loop 0, but BA[2:0] = 6
7
56-63
repeat Sub-Loop 0, but BA[2:0] = 7
a) DM must be driven LOW all the time. DQS, DQS are used according to RD Commands, otherwise MID-LEVEL.
b) Burst Sequence driven on each DQ signal by Read Command. Outside burst operation, DQ signals are MID-LEVEL.
Rev. 1.0 / Dec. 2009
21
Command
CS
RAS
CAS
WE
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
0
WR
0
1
0
0
1
0
00
0
0
0
0
00000000
1
D
1
0
0
0
1
0
00
0
0
0
0
-
2,3
D,D
1
1
1
1
1
0
00
0
0
0
0
-
4
WR
0
1
0
0
1
0
00
0
0
F
0
00110011
D
1
0
0
0
1
0
00
0
0
F
0
-
D,D
1
1
1
1
1
0
00
0
0
F
0
-
Cycle
Number
Datab)
Sub-Loop
CKE
CK, CK
Table 8 - IDD4W Measurement-Loop Patterna)
0
Static High
toggling
5
6,7
1
8-15
repeat Sub-Loop 0, but BA[2:0] = 1
2
16-23
repeat Sub-Loop 0, but BA[2:0] = 2
3
24-31
repeat Sub-Loop 0, but BA[2:0] = 3
4
32-39
repeat Sub-Loop 0, but BA[2:0] = 4
5
40-47
repeat Sub-Loop 0, but BA[2:0] = 5
6
48-55
repeat Sub-Loop 0, but BA[2:0] = 6
7
56-63
repeat Sub-Loop 0, but BA[2:0] = 7
a) DM must be driven LOW all the time. DQS, DQS are used according to WR Commands, otherwise MID-LEVEL.
b) Burst Sequence driven on each DQ signal by Write Command. Outside burst operation, DQ signals are MID-LEVEL.
Command
CS
RAS
CAS
WE
ODT
BA[2:0]
A[15:11]
A[10]
A[9:7]
A[6:3]
A[2:0]
0
REF
0
0
0
1
0
0
0
0
0
0
0
-
1
1.2
D, D
1
0
0
0
0
0
00
0
0
0
0
-
3,4
D, D
1
1
1
1
0
0
00
0
0
F
0
-
Cycle
Number
0
Sub-Loop
CKE
Datab)
Static High
toggling
CK, CK
Table 9 - IDD5B Measurement-Loop Patterna)
2
5...8
repeat cycles 1...4, but BA[2:0] = 1
9...12
repeat cycles 1...4, but BA[2:0] = 2
13...16
repeat cycles 1...4, but BA[2:0] = 3
17...20
repeat cycles 1...4, but BA[2:0] = 4
21...24
repeat cycles 1...4, but BA[2:0] = 5
25...28
repeat cycles 1...4, but BA[2:0] = 6
29...32
repeat cycles 1...4, but BA[2:0] = 7
33...nRFC-1
repeat Sub-Loop 1, until nRFC - 1. Truncate, if necessary.
a) DM must be driven LOW all the time. DQS, DQS are MID-LEVEL.
b) DQ signals are MID-LEVEL.
Rev. 1.0 / Dec. 2009
22
Table 10 - IDD7 Measurement-Loop Patterna)
0
1
2
3
4
Static High
5
6
7
8
toggling
9
10
0
1
2
...
nRRD
nRRD+1
nRRD+2
...
2*nRRD
3*nRRD
4*nRRD
nFAW
nFAW+nRRD
nFAW+2*nRRD
nFAW+3*nRRD
nFAW+4*nRRD
2*nFAW+0
2*nFAW+1
2&nFAW+2
11
2*nFAW+nRRD
2*nFAW+nRRD+1
2&nFAW+nRRD+
2
12
13
2*nFAW+2*nRRD
2*nFAW+3*nRRD
14
2*nFAW+4*nRRD
15
16
17
18
3*nFAW
3*nFAW+nRRD
3*nFAW+2*nRRD
3*nFAW+3*nRRD
19
3*nFAW+4*nRRD
A[2:0]
A[6:3]
A[9:7]
A[10]
A[15:11]
BA[2:0]
ODT
WE
CAS
RAS
CS
Command
Cycle
Number
Sub-Loop
CKE
CK, CK
ATTENTION! Sub-Loops 10-19 have inverse A[6:3] Pattern and Data Pattern than Sub-Loops 0-9
ACT
0
0
1
1
0
0
00
0
0
0
0
RDA
0
1
0
1
0
0
00
1
0
0
0
D
1
0
0
0
0
0
00
0
0
0
0
repeat above D Command until nRRD - 1
ACT
0
0
1
1
0
1
00
0
0
F
0
RDA
0
1
0
1
0
1
00
1
0
F
0
D
1
0
0
0
0
1
00
0
0
F
0
repeat above D Command until 2* nRRD - 1
repeat Sub-Loop 0, but BA[2:0] = 2
repeat Sub-Loop 1, but BA[2:0] = 3
D
1
0
0
0
0
3
00
0
0
F
0
Assert and repeat above D Command until nFAW - 1, if necessary
repeat Sub-Loop 0, but BA[2:0] = 4
repeat Sub-Loop 1, but BA[2:0] = 5
repeat Sub-Loop 0, but BA[2:0] = 6
repeat Sub-Loop 1, but BA[2:0] = 7
D
1
0
0
0
0
7
00
0
0
F
0
Assert and repeat above D Command until 2* nFAW - 1, if necessary
ACT
0
0
1
1
0
0
00
0
0
F
0
RDA
0
1
0
1
0
0
00
1
0
F
0
D
1
0
0
0
0
0
00
0
0
F
0
Repeat above D Command until 2* nFAW + nRRD - 1
ACT
0
0
1
1
0
1
00
0
0
0
0
RDA
0
1
0
1
0
1
00
1
0
0
0
D
1
0
0
0
0
1
00
0
0
0
0
Repeat above D Command until 2* nFAW + 2* nRRD - 1
repeat Sub-Loop 10, but BA[2:0] = 2
repeat Sub-Loop 11, but BA[2:0] = 3
D
1
0
0
0
0
3
00
0
0
0
0
Assert and repeat above D Command until 3* nFAW - 1, if necessary
repeat Sub-Loop 10, but BA[2:0] = 4
repeat Sub-Loop 11, but BA[2:0] = 5
repeat Sub-Loop 10, but BA[2:0] = 6
repeat Sub-Loop 11, but BA[2:0] = 7
D
1
0
0
0
0
7
00
0
0
0
0
Assert and repeat above D Command until 4* nFAW - 1, if necessary
Datab)
00000000
00110011
-
-
00110011
00000000
-
-
-
a) DM must be driven LOW all the time. DQS, DQS are used according to RD Commands, otherwise MID-LEVEL.
b) Burst Sequence driven on each DQ signal by Read Command. Outside burst operation, DQ signals are MID-LEVEL.
Rev. 1.0 / Dec. 2009
23
IDD Specifications
IDD values are for full operating range of voltage and temperature unless otherwise noted.
IDD Specification
Speed Grade
Bin
DDR3 - 1066
7-7-7
DDR3 - 1333
9-9-9
Symbol
Max.
Max.
IDD0
75
80
mA
IDD01
85
90
mA
IDD2P0
12
12
mA
IDD2P1
30
35
mA
Unit
IDD2N
45
50
mA
IDD2NT
50
55
mA
IDD2Q
45
50
mA
IDD3P
35
35
mA
IDD3N
55
60
mA
IDD4R
140
155
mA
IDD4W
145
160
mA
IDD5B
210
210
mA
Notes
x4/x8
IDD6
12
12
mA
x4/x8,1
IDD6ET
15
15
mA
x4/x8,2
IDD6TC
15
15
mA
x4/x8,3
IDD7
210
230
mA
x4/x8
Notes:
1. Applicable for MR2 settings A6=0 and A7=0. Temperature range for IDD6 is 0 - 85oC.
2. Applicable for MR2 settings A6=0 and A7=1. Temperature range for IDD6ET is 0 - 95oC.
3. Applicable for MR2 settings A6=1 and A7=0. IDD6TC is measured at 95oC
Rev. 1.0 / Dec. 2009
24
Input/Output Capacitance
Parameter
Input/output capacitance
(DQ, DM, DQS, DQS,
TDQS, TDQS)
Input capacitance, CK and
CK
Input capacitance delta
CK and CK
Input capacitance delta,
DQS and DQS
Input capacitance
(All other input-only pins)
Input capacitance delta
(All CTRL input-only pins)
Input capacitance delta
(All ADD/CMD input-only
pins)
Input/output capacitance
delta
(DQ, DM, DQS, DQS)
Input/output capacitance
of ZQ pin
Notes:
Symbol
DDR3-800
DDR3-1066
DDR3-1333
Units
Notes
2.5
pF
1,2,3
0.8
1.4
pF
2,3
0.15
0
0.15
pF
2,3,4
0
0.20
0
0.15
pF
2,3,5
1.4
0.75
1.35
0.75
1.3
pF
2,3,6
-0.5
0.3
-0.5
0.3
-0.4
0.2
pF
2,3,7,8
-0.5
0.5
-0.5
0.5
-0.4
0.4
pF
2,3,9,10
CDIO
-0.5
0.3
-0.5
0.3
-0.5
0.3
pF
2,3,11
CZQ
-
3
-
3
-
3
pF
2,3,12
Min
Max
Min
Max
Min
Max
CIO
1.5
3.0
1.5
2.7
1.5
CCK
0.8
1.6
0.8
1.6
CDCK
0
0.15
0
CDDQS
0
0.20
CI
0.75
CDI_CTRL
CDI_ADD_C
MD
1. Although the DM, TDQS and TDQS pins have different functions, the loading matches DQ and DQS.
2. This parameter is not subject to production test. It is verified by design and characterization. The capacitance is
measured according to JEP147(“PROCEDURE FOR MEASURING INPUT CAPACITANCE USING A VECTOR NETWORK
ANALYZER(VNA)”) with VDD, VDDQ, VSS,VSSQ applied and all other pins floating (except the pin under test, CKE,
RESET and ODT as necessary). VDD=VDDQ=1.5V, VBIAS=VDD/2 and on-die termination off.
3. This parameter applies to monolithic devices only; stacked/dual-die devices are not covered here
4. Absolute value of CCK-CCK.
5. Absolute value of CIO(DQS)-CIO(DQS).
6. CI applies to ODT, CS, CKE, A0-A15, BA0-BA2, RAS, CAS, WE.
7. CDI_CTR applies to ODT, CS and CKE.
8. CDI_CTRL=CI(CNTL) - 0.5 * CI(CLK) + CI(CLK))
9. CDI_ADD_CMD applies to A0-A15, BA0-BA2, RAS, CAS and WE.
10. CDI_ADD_CMD=CI(ADD_CMD) - 0.5*(CI(CLK)+CI(CLK))
11. CDIO=CIO(DQ) - 0.5*(CIO(DQS)+CIO(DQS))
12. Maximum external load capacitance an ZQ pin: 5 pF.
Rev. 1.0 / Dec. 2009
25
Standard Speed Bins
DDR3L SDRAM Standard Speed Bins include tCK, tRCD, tRP, tRAS and tRC for each corresponding bin.
DDR3-800 Speed Bins
For specific Notes See “Speed Bin Table Notes” on page 29.
Speed Bin
DDR3-800E
CL - nRCD - nRP
6-6-6
Unit
Parameter
Symbol
min
max
Internal read command to first data
tAA
15
20
ns
ACT to internal read or write delay time
tRCD
15
—
ns
PRE command period
tRP
15
—
ns
ACT to ACT or REF command period
tRC
52.5
—
ns
ACT to PRE command period
tRAS
37.5
9 * tREFI
ns
CL = 5
CWL = 5
tCK(AVG)
CL = 6
CWL = 5
tCK(AVG)
Reserved
2.5
3.3
ns
1, 2, 3, 4
ns
1, 2, 3
Supported CL Settings
6
nCK
Supported CWL Settings
5
nCK
Rev. 1.0 / Dec. 2009
Notes
26
DDR3-1066 Speed Bins
For specific Notes See “Speed Bin Table Notes” on page 29.
Speed Bin
DDR3-1066F
CL - nRCD - nRP
Parameter
Symbol
Unit
7-7-7
min
max
Internal read command to
first data
tAA
13.125
20
ns
ACT to internal read or
write delay time
tRCD
13.125
—
ns
PRE command period
tRP
13.125
—
ns
ACT to ACT or REF
command period
tRC
50.625
—
ns
ACT to PRE command
period
tRAS
37.5
9 * tREFI
ns
CL = 5
CL = 6
CL = 7
CL = 8
Note
CWL = 5
tCK(AVG)
Reserved
ns
1, 2, 3, 4, 5
CWL = 6
tCK(AVG)
Reserved
ns
4
CWL = 5
tCK(AVG)
ns
1, 2, 3, 5
CWL = 6
tCK(AVG)
Reserved
ns
1, 2, 3, 4
CWL = 5
tCK(AVG)
Reserved
ns
4
CWL = 6
tCK(AVG)
ns
1, 2, 3, 4
CWL = 5
tCK(AVG)
ns
4
CWL = 6
tCK(AVG)
ns
1, 2, 3
2.5
3.3
1.875
< 2.5
Reserved
1.875
< 2.5
Supported CL Settings
6, 7, 8
nCK
Supported CWL Settings
5, 6
nCK
Rev. 1.0 / Dec. 2009
27
DDR3-1333 Speed Bins
For specific Notes See “Speed Bin Table Notes” on page 29.
Speed Bin
DDR3-1333H
CL - nRCD - nRP
Parameter
Symbol
Unit
9-9-9
min
max
Internal read
command to first data
tAA
13.5
(13.125)8
20
ns
ACT to internal read or
write delay time
tRCD
13.5
(13.125)8
—
ns
PRE command period
tRP
13.5
(13.125)8
—
ns
ACT to ACT or REF
command period
tRC
49.5
(49.125)8
—
ns
ACT to PRE command
period
tRAS
36
9 * tREFI
ns
Note
CWL = 5
tCK(AVG)
Reserved
ns
1,2, 3,4, 6
CWL = 6, 7
tCK(AVG)
Reserved
ns
4
CWL = 5
tCK(AVG)
ns
1, 2, 3, 6
CWL = 6
tCK(AVG)
Reserved
ns
1, 2, 3, 4, 6
CWL = 7
tCK(AVG)
Reserved
ns
4
CWL = 5
tCK(AVG)
Reserved
ns
4
CWL = 6
tCK(AVG)
ns
1, 2, 3, 4, 6
CWL = 7
tCK(AVG)
Reserved
ns
1, 2, 3, 4
CWL = 5
tCK(AVG)
Reserved
ns
4
CWL = 6
tCK(AVG)
ns
1, 2, 3, 6
CWL = 7
tCK(AVG)
Reserved
ns
1, 2, 3, 4
CWL = 5, 6
tCK(AVG)
Reserved
ns
4
CWL = 7
tCK(AVG)
ns
1, 2, 3, 4
CWL = 5, 6
tCK(AVG)
ns
4
CWL = 7
tCK(AVG)
ns
ns
1, 2, 3
Reserved
Supported CL Settings
6, 8, (7), 9, (10)
nCK
Supported CWL Settings
5, 6, 7
nCK
CL = 5
CL = 6
CL = 7
CL = 8
CL = 9
CL = 10
Rev. 1.0 / Dec. 2009
2.5
3.3
1.875
< 2.5
Reserved
1.875
< 2.5
1.5
<1.875
Reserved
1.5
<1.875
28
Speed Bin Table Notes
Absolute Specification (TOPER; VDDQ = VDD = 1.5V +/- 0.075 V);
1. The CL setting and CWL setting result in tCK(AVG).MIN and tCK(AVG).MAX requirements. When making a selection of tCK (AVG), both need to be fulfilled: Requirements from CL setting as well as
requirements from CWL setting.
2. tCK(AVG).MIN limits: Since CAS Latency is not purely analog - data and strobe output are synchronized by the DLL - all possible intermediate frequencies may not be guaranteed. An application should
use the next smaller JEDEC standard tCK (AVG) value (2.5, 1.875, 1.5, or 1.25 ns) when calculating CL
[nCK] = tAA [ns] / tCK (AVG) [ns], rounding up to the next ‘Supported CL’.
3. tCK(AVG).MAX limits: Calculate tCK (AVG) = tAA.MAX / CLSELECTED and round the resulting tCK
(AVG) down to the next valid speed bin (i.e. 3.3ns or 2.5ns or 1.875 ns or 1.25 ns). This result is
tCK(AVG).MAX corresponding to CLSELECTED.
4. ‘Reserved’ settings are not allowed. User must program a different value.
5. Any DDR3-1066 speed bin also supports functional operation at lower frequencies as shown in the
table which are not subject to Production Tests but verified by Design/Characterization.
6. Any DDR3-1333 speed bin also supports functional operation at lower frequencies as shown in the
table which are not subject to Production Tests but verified by Design/Characterization.
7. Any DDR3-1600 speed bin also supports functional operation at lower frequencies as shown in the
table which are not subject to Production Tests but verified by Design/Characterization.
8. Hynix DDR3 SDRAM devices support down binning to CL=7 and CL=9, tAA/tRCD/tRPmin must be
13.125 ns or lower. SPD settings must be programmed to match. For example, DDR3 1333H devices
supporting down binning to DDR3-1066F should program 13.125 ns in SPD bytes for tAAmin (Byte
16), tRCDmin (Byte 18), and tRPmin (Byte 20). DDR3-1600K devices supporting down binning to
DDR3-1333H or DDR3 1600F should program 13.125 ns in SPD bytes for tAAmin (Byte 16), tRCDmin
(Byte 18), and tRPmin (Byte 20). Once tRP (Byte 20) is programmed to 13.125ns, tRCmin (Byte 21,23)
also should be programmed accordingly. For example, 49.125ns (tRASmin + tRPmin = 36 ns + 13.125
ns) for DDR3-1333H and 48.125ns (tRASmin + tRPmin = 35 ns + 13.125 ns) for DDR3-1600K.
Rev. 1.0 / Dec. 2009
29
Package Dimensions
Package Dimension(x4/x8); 82Ball Fine Pitch Ball Grid Array Outline
9.400 ± 0.100
A1 CORNER
INDEX AREA
1.100 ± 0.100
(2.350)
11.100 ± 0.100
(2.775)
0.340 ± 0.050
3.0 X 5.0 MIN
FLAT AREA
TOP
SIDE
0.800 X 10 = 8.000
0.800
0.700 ± 0.100
A1 BALL MARK
11 10
9
8
4
3
2
1
A
B
C
0.800
E
F
G
H
J
0.800 X 12 = 9.600
D
K
L
N
82 x φ0.450 ± 0.050
1.600
1.600
0.750 ± 0.100
M
BOTTOM
Rev. 1.0 / Dec. 2009
30