Frontier Electronics Corp. 667 E. COCHRAN STREET, SIMI VALLEY, CA 93065 TEL: (805) 522-9998 FAX: (805) 522-9989 E-mail: [email protected] Web: http://www.frontierusa.com SILICON EPITAXIAL PLANAR DIODE 1N4148-LFR FEATURES z FAST SWITCHING z SMALL SIZE z ROHS 0.52∅ 3.9 MECHANICAL DATA z CASE: GLASS, DO35, DIMENSIONS IN MILLIMETERS z LEADS: SOLDERABLE PER MIL-STD-202, METHOD 208 z POLARITY: CATHODE INDICATED BY COLOR BAND z WEIGHT: 0.13 GRAMS RATINGS REVERSE VOLTAGE PEAK REVERSE VOLTAGE RECTIFIED CURRENT (AVERAGE) HALF WAVE RECTIFICATION WITH RESIST LOAD AT Tamb=25 ºC AND f ≥ 50HZ (NOTE 1) SURGE FORWARD CURRENT AT T<1 s AND TJ=25 ºC POWER DISSIPATION AT Tamb=25 ºC JUNCTION TEMPERATURE STORAGE TEMPERATURE RANGE 1.9 ∅ 27.5 MIN SYMBOL 1N4148-LFR UNITS VR VRM 75 100 V V IO 150 mA IFSM PTOT TJ TS 500 500 200 - 55 TO + 200 mA mW ºC ºC ELECTRICAL CHARACTERISTICS (AT TA =25°C UNLESS OTHERWISE NOTED) CHARACTERISTICS @ TJ＝25 ºC FORWARD VOLTAGE AT IF=10mA LEAKAGE CURRENT AT VR=20V AT VR=75V AT VR=20V TJ=150 ºC REVERSE BREAKDOWN VOLTAGE TESTED WITH 100μA PULSES CAPACITANCE AT VF=VR=0 VOLTAGE RISE WHEN SWITCHING ON TESTED WITH 50mA FORWARD PULSES SYMBOL MIN TYP MAX UNITS VF - - 1 V IR IR IR - - 25 5 50 nA μA μA VR 100 - - V CTOT - - 4 PF VFR - - 2.5 V TRR - - 4 nS RTHA - - 0.35 K / mW NV 0.45 - - - TP=0.1μS RISE TIME＜30ns FP=5 TO 100 KHZ REVERSE RECOVERY TIME FROM IF=10mA TO IR=1mA VR=6V RL=100Ω THERMAL RESISTANCE JUNCTION TO AMBIENT AIR (NOTE 1) RECTIFICATION EFFICIENCY AT f =100 MHZ VRF=2V NOTE: 1. LEADS KEPT AT AMBIENT TEMP. AT 8mm LENGTH 1N4148-LFR Page: 1 FIG.1B- Range for Units to 12 to 100 Volts +8 +6 +4 +2 VZ@IZT RANGE 0 -2 -4 2 3 4 5 6 7 8 9 10 11 12 100 70 50 30 20 ( mV/ºC) θVZ, TEMPERATURE COEFFICIENT +10 ( mV/ºC) θVZ, TEMPERATURE COEFFICIENT FIG.1A- Range for Units to 12 Volts +12 10 7 5 3 2 VZ@IZT RANGE 1 10 20 30 50 VZ, ZENER VOLTAGE (VOLTS) VZ, ZENER VOLTAGE (VOLTS) 70 100 Figure 2. Temperature Coefficients (-55ºC to+150ºC temperature change; 90% of the units are in the ranges indicated.) 125 100 75 50 25 0 0 0.1 0.2 VZ@IZ TA=25ºC +4 ( mV/ºC) θVZ, TEMPERATURE COEFFICIENT +6 150 RESISTANCE (mV/ºC/W) θJL, JUNCTION TO LEAD THERMAL 175 20mA +2 0.01mA 0 1mA -2 NOTE:BELOW 3 VOLTS AAND ABOCE 8 VOLTS CHANGES IN ZENER CURRENT DO NOT EFFECT TEMPERATURE COEFFICIENTS -4 3 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 4 L, LEAD LENGTH TO HEAT SINK (INCHES) 200 6 7 8 Figure 4. Effect of Zener Current 400 300 200 Tj=25ºC Iz(ms)=0.1Iz(do) f=60hz Iz=1mA C, CAPACITANCE (PF) 0VBIAS 100 70 50 20 5mA 20mA 10 7 5 2 1 1 2 3 5 7 10 20 30 50 70 100 100 0VBIAS 50 20 10 8 50%OF BREAKDOWNBIAS 4 VZ, ZENER CURRENT (mA) 1 2 5 10 20 50 VZ, NOMINAL VZ (VOLTS) Figure. 7 - Power Temperature Derating Curve PD ,MAXIMUM DISSIPATION (WATTS) ZZ DYNAMIC IMPEDANCE (OHNS) Figure 3. Typical Thermal Resistance versus Lead Length 1000 700 500 5 VZ, ZENER VOLTAGE (VOLTS) 1.25 1.0 0.75 0.5 0.25 0 1N4148-LFR 20 40 60 80 100 120 140 160 TL, LEAD TEMPERATURE (OC) 180 200 Page: 1 100