Frontier Electronics Corp. 667 E. COCHRAN STREET, SIMI VALLEY, CA 93065 TEL: (805) 522-9998 FAX: (805) 522-9989 E-mail: [email protected] Web: http://www.frontierusa.com SILICON EPITAXIAL PLANAR DIODE 1N914 1N914A 1N914B FEATURES z FAST SWITCHING z SMALL BODY 0.52∅ 3.9∅ MECHANICAL DATA z CASE GLASS, DO35, DIMENSIONS IN INCHES AND (MILLIMETERS) z LEADS SOLDERABLE PER MIL-STD-202, METHOD 208 z POLARITY CATHODE INDICATED BY COLOR BAND z WEIGHT 0.13 GRAMS RATINGS REVERSE VOLTAGE PEAK REVERSE VOLTAGE RECTIFIED CURRENT (AVERAGE) HALF WAVE RECTIFICATION WITH RESIST LOAD AT Tamb=25 ºC AND ≥ 50Hz. SURGE FORWARD CURRENT AT T < 1 s AND TJ=25 ºC POWER DISSIPATION AT Tamb=25 ºC JUNCTION TEMPERATURE STORAGE TEMPERATURE RANGE SYMBOL 1.9 ∅ 27.5 MIN 1N914 1N914 1N914A 1N914B 1N914B UNITS VR VRM 75 100 V V IO 75 mA IFSM PTOT TJ TS 500 500 200 - 55 TO + 200 mA mW ºC ºC ELECTRICAL CHARACTERISTICS (AT TA =25°C UNLESS OTHERWISE NOTED) CHARACTERISTICS SYMBOL MIN FORWARD VOLTAGE AT IF=10mA ( 1N914 ) FORWARD VOLTAGE AT IF=20mA ( 1N914A ) VF FORWARD VOLTAGE AT IF=100mA ( 1N914B ) LEAKAGE CURRENT AT VR=20V IR AT VR=75V IR AT VR=20V TJ=150 ºC IR REVERSE BREAKDOWN VOLTAGE VR 100 TESTED WITH 100μA PULSES CAPACITANCE AT VF=VR=0 CTOT VOLTAGE RISE WHEN SWITCHING ON TESTED WITH 50mA FORWARD PULSES VFR TP=0.1μS RISE TIME＜30ns FP=50 TO 100 KHZ REVERSE RECOVERY TIME FROM IF=10mA TO IR=1mA VR=6V RL=100Ω THERMAL RESISTANCE FUNCTION TO AMBLENT AIR RECTIFICATION EFFICIENCY AT F=100 MHZ VRF=2V 1N914A TYP MAX UNITS - 1 V - 25 5 50 nA μA μA - - V - 4 PF - 2.5 V TRR - - 4 nS RTHA - - 0.35 K / mW NV 0.45 - - - Page: 1 Fig. 1-Admissible repetitive peak forward current versus pulse duration A 100 I 5 4 3 2 IFRM ν =tp/T T=1/ fp ν =0 IFRM 10 tp t 0.1 T 5 4 3 2 0.2 1 0.5 5 4 3 2 0.1 10 -5 2 5 10 -4 2 10 5 -3 2 5 10 -2 2 5 10 -1 2 1 5 2 10 S 5 tp Fig. 3-Dynamic forward resistance versus forward current Fig. 2-Forward characteristics mA Ω 103 Tj=25OC f=1KHz 4 10 5 102 rf Tj=25oC Tj=100oC IF 2 10 3 5 10 2 2 10 5 1 2 10 -1 10 5 10 2 1 -2 0 1 2 VF 10 -2 10 -1 1 10 10 2 mA IF Fig. 4-Admissible power dissipation versus ambient temperature Valid provided that leads at a distance of 8mm from case are kept at ambient temperture Fig. 5-Relative capacitance versus reverse voltage Mw 1000 900 Ptot Tj=25OC f=1KHz 1.1 Ctot(VR) 800 Ctot(0V) 700 1.0 600 500 0.9 400 300 0.8 200 100 0.7 0 0 100 200ºC Tamb 1N914 1N914A 1N914B 0 2 4 6 8 10 VR Page: 1