HERAF801G - HERAF808G Isolated 8.0 AMPS. Glass Passivated High Efficient Rectifiers ITO-220AC .185(4.7) .173(4.4) .406(10.3) .390(9.90) .124(3.16) .118(3.00) .134(3.4)DIA .113(3.0)DIA .272(6.9) .248(6.3) Features .606(15.5) .583(14.8) Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application. .063(1.6) MAX .161(4.1) .146(3.7) Mechanical Data .112(2.85) .100(2.55) .110(2.8) .098(2.5) .055(1.4) .043(1.1) .030(0.76) .020(0.50) .035(0.9) .020(0.5) .071(1.8) MAX 2 .100(2.55) .100(2.55) Cases: ITO-220AC molded plastic Epoxy: UL 94V0 rate flame retardant Terminals: Pure tin plated, lead free solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: o 260 C/ 0.25” (6.35mm) from case for 10 seconds Mounting torque: 5 in – 1bs. Max. Weight: 2.24 grams .543(13.8) .512(13.2) PIN 1 PIN 2 CASE Case Positive Dimensions in inches and (millimeters) Maximum Rating and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current .375”(9.5mm) Lead Length o @TC =100 C Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @8.0A Maximum DC Reverse Current @ T A=25 oC at Rated DC Blocking Voltage @ TA=125 oC Maximum Reverse Recovery Time (Note 1) Typical Junction Capacitance ( Note 2 ) Typical Thermal resistance (Note 3) Operating Temperature Range V RRM V RMS V DC HERAF HERAF HERAF HERAF HERAF HERAF HERAF HERAF 808G 801G 802G 803G 804G 805G 806G 807G 50 35 50 100 70 100 200 140 200 300 210 300 400 280 400 600 420 600 800 1000 560 700 800 1000 Units V V V I(AV) 8.0 A IFSM 150 A VF 1.0 1.3 10 400 IR Trr Cj R θJC TJ 1.7 50 80 80 60 2.0 -65 to +150 -65 to +150 Storage Temperature Range TSTG Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate. V uA uA nS pF o C/W o C o C Version: A06 RATINGS AND CHARACTERISTIC CURVES (HERAF801G THRU HERAF808G) FIG.2- TYPICAL REVERSE CHARACTERISTICS 1000 20 INSTANTANEOUS REVERSE CURRENT. ( A) 16 12 8 4 0 0 50 100 150 o FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 10 Tj=75 0C 1 Tj=25 0C 0.1 120 0 8.3ms Single Half Sine Wave JEDEC Method 90 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.5- TYPICAL FORWARD CHARACTERISTICS 60 100 30 20 50 100 FIG.4- TYPICAL JUNCTION CAPACITANCE 180 150 120 HE RA 90 F8 HE 01G ~H RA 60 F8 ER AF 06 G~ 805 G HE F8 08 0 1 2 5 G 10 20 50 10 3 1 8G 80 AF ER H G~ 06 F8 RA HE 0.3 0.1 0.03 RA 30 30 5G 10 80 5 AF 2 ER 1 H 0 NUMBER OF CYCLES AT 60Hz CAPACITANCE.(pF) Tj=125 0C 150 INSTANTANEOUS FORWARD CURRENT. (A) PEAK FORWARD SURGE CURRENT. (A) CASE TEMPERATURE. ( C) 100 HE RA F8 01 G~ HE RA F8 04 G AVERAGE FORWARD CURRENT. (A) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 100 200 500 1000 0.01 0.4 REVERSE VOLTAGE. (V) 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE. (V) 1.6 1.8 FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A (+) 50Vdc (approx) (-) (-) DUT PULSE GENERATOR (NOTE 2) NON INDUCTIVE OSCILLOSCOPE (NOTE 1) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms 0 -0.25A (+) -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06