HFA3102 Data Sheet August 1996 File Number 3635.2 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0.01nA. • High Gain-Bandwidth Product (fT) . . . . . . . . . . . . . 10GHz • High Power Gain-Bandwidth Product . . . . . . . . . . . . 5GHz • High Current Gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . 70 • Noise Figure (Transistor) . . . . . . . . . . . . . . . . . . . . . 3.5dB • Low Collector Leakage Current . . . . . . . . . . . . . <0.01nA Ordering Information PART NUMBER • Excellent hFE and VBE Matching TEMP. RANGE (oC) PKG. NO. PACKAGE • Pin-to-Pin to UPA102G HFA3102B -40 to 85 14 Ld SOIC M14.15 Applications HFA3102B96 -40 to 85 14 Ld SOIC Tape and Reel M14.15 • Single Balanced Mixers • Wide Band Amplification Stages Pinout/Functional Diagram • Differential Amplifiers HFA3102 (SOIC) TOP VIEW 14 13 12 11 • Multipliers • Automatic Gain Control Circuits 10 9 8 • Frequency Doublers, Tripplers • Oscillators Q1 • Constant Current Sources Q6 Q2 • Wireless Communication Systems Q4 Q3 • Radio and Satellite Communications Q5 • Fiber Optic Signal Processing • High Performance Instrumentation 1 2 3 4 3-449 5 6 7 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 HFA3102 Absolute Maximum Ratings TA = 25oC Thermal Information VCEO Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . 8.0V VCBO Collector to Base Voltage . . . . . . . . . . . . . . . . . . . . . . . 12.0V VEBO Emitterr to Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . 12.0V IC , Collector Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Operating Conditions Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC Thermal Resistance (Typical, Note 1) θJA (oC/W) SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125 Maximum Power Dissipation at 75oC Any One Transistor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.25W Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . .175oC Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300oC (SOIC - Lead Tips Only) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. θJA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications SYMBOLS TA = 25oC PARAMETER TEST CONDITIONS (NOTE 2) TEST LEVEL ALL GRADES MIN TYP MAX UNITS V(BR)CBO Collector-to-Base Breakdown Voltage (Q1, Q2, Q4, and Q5) IC = 100µA, IE = 0 A 12 18 - V V(BR)CEO Collector-to-Emitter Breakdown Voltage (Q1 thru Q6) IC = 100µA, IB = 0 A 8 12 - V V(BR)EBO Emitter-to-Base Breakdown Voltage (Q3 and Q6) IE = 50µA, IC = 0 A 5.5 6 - V ICBO Collector Cutoff Current (Q1, Q2, Q4, and Q5) VCB = 5V, IE = 0 A - 0.1 10 nA IEBO Emitter Cutoff Current (Q3 and Q6) VEB = 1V, IC = 0 A - - 100 nA hFE DC Current Gain (Q1 thru Q6) IC = 10mA, VCE = 3V A 40 70 - - CCB Collector-to-Base Capacitance VCB = 5V, f = 1MHz B - 300 - fF CEB Emitter-to-Base Capacitance VEB = 0, f = 1MHz B - 200 - fF fT Current Gain-Bandwidth Product IC = 10mA, VCE = 5V C - 10 - GHz fMAX Power Gain-Bandwidth Product IC = 10mA, VCE = 5V C - 5 - GHz Available Gain at Minimum Noise Figure IC = 3mA, VCE = 3V f = 0.5GHz C - 17.5 - dB f = 1.0GHz C - 12.4 - dB IC = 3mA, VCE = 3V f = 0.5GHz C - 1.8 - dB f = 1.0GHz C - 2.1 - dB IC = 3mA, VCE = 3V f = 0.5GHz C - 3.3 - dB f = 1.0GHz C - 3.5 - dB GNFMIN NFMIN NF50Ω hFE1/hFE2 Minimum Noise Figure 50Ω Noise Figure DC Current Gain Matching (Q1 and Q2, Q4 and Q5) IC = 10mA, VCE = 3V A 0.9 1.0 1.1 - VOS Input Offset Voltage (Q1 and Q2), (Q4 and Q5) IC = 10mA, VCE = 3V A - 1.5 5 mV IOS Input Offset Current (Q1 and Q2), (Q4 and Q5) IC = 10mA, VCE = 3V A - 5 25 µA 3-450 HFA3102 Electrical Specifications SYMBOLS TA = 25oC (Continued) PARAMETER TEST CONDITIONS (NOTE 2) TEST LEVEL ALL GRADES MIN TYP MAX UNITS dVOS/dT Input Offset Voltage TC (Q1 and Q2, Q4 and Q5) IC = 10mA, VCE = 3V C - 0.5 - µV/oC ITRENCH- Collector-to-Collector Leakage (Pin 6, 7, 13, and 14) ∆VTEST = 5V B - 0.01 - nA LEAKAGE NOTE: 2. Test Level: A. Production Tested; B. Typical or Guaranteed Limit Based on Characterization; C. Design Typical for Information Only PSPICE Model for a Single Transistor .Model NUHFARRY NPN + ( IS= 1.840E-16 EG= 1.110E+00 VAF= 7.200E+01 BF= 1.036E+02 ISE= 1.686E-19 NE= 1.400E+00 + IKF= 5.400E-02 XTB= 0.000E+00 BR= 1.000E+01 ISC= 1.605E-14 + NC= 1.800E+00 IKR= 5.400E-02 + VAR= 4.500E+00 XTI= 3.000E+00 RC= 1.140E+01 CJC= 3.980E-13 + MJC= 2.400E-01 VJC= 9.700E-01 FC= 5.000E-01 CJE= 2.400E-13 + MJE= 5.100E-01 VJE= 8.690E-01 TR= 4.000E-09 TF= 10.51E-12 + ITF= 3.500E-02 + XCJC= 9.000E-01 + RE= 1.848E+00 XTF= 2.300E+00 CJS= 1.689E-13 RB= 5.007E+01 + AF= 1.000E+00) 3-451 VTF= 3.500E+00 VJS= 9.982E-01 RBM= 1.974E+00 PTF= 0.000E+00 MJS= 0.000E+00 KF= 0.000E+00 HFA3102 Common Emitter S-Parameters VCE = 5V and IC = 5mA FREQ. (Hz) 1.0E+08 2.0E+08 3.0E+08 4.0E+08 5.0E+08 6.0E+08 7.0E+08 8.0E+08 9.0E+08 1.0E+09 1.1E+09 1.2E+09 1.3E+09 1.4E+09 1.5E+09 1.6E+09 1.7E+09 1.8E+09 1.9E+09 2.0E+09 2.1E+09 2.2E+09 2.3E+09 2.4E+09 2.5E+09 2.6E+09 2.7E+09 2.8E+09 2.9E+09 3.0E+09 |S11| 0.833079 0.791776 0.734911 0.672811 0.612401 0.557126 0.508133 0.465361 0.428238 0.396034 0.368032 0.343589 0.322155 0.303268 0.286542 0.271660 0.258359 0.246420 0.235659 0.225923 0.217085 0.209034 0.201678 0.194939 0.188747 0.183044 0.177780 0.172909 0.168394 0.164200 PHASE(S11) -11.7873 -22.8290 -32.6450 -41.0871 -48.2370 -54.2780 -59.4102 -63.8123 -67.6313 -70.9834 -73.9591 -76.6285 -79.0462 -81.2548 -83.2880 -85.1723 -86.9292 -88.5759 -90.1265 -91.5925 -92.9836 -94.3076 -95.5713 -96.7803 -97.9395 -99.0530 -100.124 -101.156 -102.152 -103.114 |S12| 1.418901E-02 2.695740E-02 3.750029E-02 4.572138E-02 5.194147E-02 5.659943E-02 6.009507E-02 6.274213E-02 6.477134E-02 6.634791E-02 6.758932E-02 6.857937E-02 6.937837E-02 7.003020E-02 7.056718E-02 7.101343E-02 7.138717E-02 7.170231E-02 7.196964E-02 7.219757E-02 7.239274E-02 7.256046E-02 7.270498E-02 7.282977E-02 7.293764E-02 7.303093E-02 7.311157E-02 7.318117E-02 7.324107E-02 7.329243E-02 PHASE(S12) 78.8805 68.6355 59.5861 51.9018 45.5043 40.2112 35.8226 32.1594 29.0743 26.4506 24.1974 22.2441 20.5358 19.0293 17.6908 16.4930 15.4143 14.4370 13.5469 12.7319 11.9824 11.2901 10.6480 10.0503 9.49212 8.96908 8.47753 8.01430 7.57661 7.16204 |S21| 11.0722 10.5177 9.75379 8.91866 8.10511 7.35944 6.69712 6.11750 5.61303 5.17405 4.79104 4.45546 4.15997 3.89845 3.66577 3.45770 3.27074 3.10197 2.94897 2.80969 2.68243 2.56573 2.45837 2.35928 2.26756 2.18243 2.10322 2.02934 1.96027 1.89556 PHASE(S21) 168.576 157.897 148.443 140.361 133.569 127.882 123.102 119.047 115.571 112.556 109.913 107.570 105.472 103.576 101.849 100.262 98.7956 97.4307 96.1533 94.9515 93.8156 92.7373 91.7097 90.7271 89.7844 88.8775 88.0026 87.1565 86.3366 85.5404 |S22| 0.976833 0.930993 0.868128 0.799886 0.734033 0.674392 0.622181 0.577269 0.538952 0.506365 0.478663 0.455091 0.435008 0.417872 0.403238 0.390735 0.380056 0.370947 0.363195 0.356623 0.351081 0.346442 0.342599 0.339458 0.336942 0.334982 0.333518 0.332499 0.331879 0.331620 PHASE(S22) -11.0509 -21.3586 -30.4451 -38.1641 -44.5998 -49.9370 -54.3777 -58.1022 -61.2587 -63.9647 -66.3116 -68.3702 -70.1958 -71.8314 -73.3108 -74.6609 -75.9030 -77.0544 -78.1288 -79.1377 -80.0903 -80.9942 -81.8557 -82.6802 -83.4719 -84.2347 -84.9716 -85.6853 -86.3781 -87.0518 |S22| 0.959692 0.886232 0.796016 0.708892 0.633146 0.570209 0.518803 0.476987 0.442915 0.415044 0.392146 0.373261 0.357640 0.344698 0.333974 0.325102 0.317789 0.311800 0.306940 0.303051 0.300003 0.297686 0.296007 0.294889 0.294266 0.294081 0.294285 0.294836 0.295696 0.296834 PHASE(S22) -14.2688 -26.9507 -37.3172 -45.4503 -51.7704 -56.7206 -60.6598 -63.8540 -66.4948 -68.7193 -70.6269 -72.2899 -73.7620 -75.0832 -76.2840 -77.3877 -78.4122 -79.3715 -80.2768 -81.1365 -81.9578 -82.7460 -83.5057 -84.2405 -84.9533 -85.6466 -86.3223 -86.9822 -87.6275 -88.2595 VCE = 5V and IC = 10mA FREQ. (Hz) 1.0E+08 2.0E+08 3.0E+08 4.0E+08 5.0E+08 6.0E+08 7.0E+08 8.0E+08 9.0E+08 1.0E+09 1.1E+09 1.2E+09 1.3E+09 1.4E+09 1.5E+09 1.6E+09 1.7E+09 1.8E+09 1.9E+09 2.0E+09 2.1E+09 2.2E+09 2.3E+09 2.4E+09 2.5E+09 2.6E+09 2.7E+09 2.8E+09 2.9E+09 3.0E+09 |S11| 0.728106 0.670836 0.600268 0.531768 0.471795 0.421506 0.379961 0.345693 0.317301 0.293608 0.273680 0.256782 0.242344 0.229918 0.219152 0.209767 0.201539 0.194288 0.187867 0.182157 0.177056 0.172484 0.168370 0.164656 0.161293 0.158239 0.155458 0.152919 0.150595 0.148463 PHASE(S11) -16.4319 -31.2669 -43.7663 -54.0028 -62.3880 -69.3569 -75.2612 -80.3608 -84.8420 -88.8381 -92.4452 -95.7336 -98.7555 -101.551 -104.150 -106.577 -108.851 -110.988 -113.001 -114.902 -116.698 -118.399 -120.012 -121.542 -122.996 -124.378 -125.694 -126.947 -128.140 -129.279 3-452 |S12| 1.273920E-02 2.342300E-02 3.132521E-02 3.681579E-02 4.057046E-02 4.316292E-02 4.499071E-02 4.631140E-02 4.728948E-02 4.803091E-02 4.860515E-02 4.905871E-02 4.942344E-02 4.972158E-02 4.996903E-02 5.017730E-02 5.035491E-02 5.050825E-02 5.064218E-02 5.076045E-02 5.086598E-02 5.096107E-02 5.104755E-02 5.112690E-02 5.120031E-02 5.126876E-02 5.133304E-02 5.139381E-02 5.145164E-02 5.150697E-02 PHASE(S12) 75.4177 62.8941 52.5891 44.5019 38.2308 33.3405 29.4764 26.3755 23.8481 21.7581 20.0070 18.5224 17.2505 16.1506 15.1915 14.3490 13.6040 12.9411 12.3482 11.8151 11.3338 10.8974 10.5001 10.1373 9.80479 9.49919 9.21750 8.95716 8.71595 8.49194 |S21| 15.1273 13.9061 12.3970 10.9257 9.62995 8.53559 7.62375 6.86423 6.22797 5.69057 5.23257 4.83873 4.49716 4.19854 3.93554 3.70234 3.49428 3.30758 3.13919 2.98658 2.84766 2.72068 2.60420 2.49697 2.39793 2.30619 2.22098 2.14162 2.06753 1.99820 PHASE(S21) 165.227 152.045 141.185 132.570 125.781 120.378 116.005 112.398 109.365 106.771 104.518 102.532 100.759 99.1602 97.7028 96.3629 95.1215 93.9633 92.8761 91.8500 90.8766 89.9494 89.0626 88.2115 87.3920 86.6007 85.8348 85.0916 84.3690 83.6651 HFA3102 Typical Performance Curves 140 12 IB = 150µA 120 10 IB = 120µA 100 8 hFE IC (mA) IB = 90µA 6 IB = 60µA 4 80 60 40 IB = 30µA 2 20 0 10-10 0 0 1 2 3 4 5 10-8 10-6 VCE (V) FIGURE 1. IC vs VCE VCE = 5V 10-2 10 10-4 8 fT (GHz) IC AND IB (A) 100 12 VCE = 3V 10-6 6 10-8 4 10-10 2 10-12 0.4 0.6 VBE (V) 0.8 0 10-4 1.0 18 4.4 16 4.2 14 4.0 12 3.8 10 3.6 8 3.4 6 3.2 4 1.5 2.0 2.5 40 3.0 FREQUENCY (GHz) FIGURE 5. GAIN AND NOISE FIGURE vs FREQUENCY 3-453 POUT, OUTPUT POWER (dBm) 4.6 |S21| (dB) 20 1.0 10-2 10-1 FIGURE 4. fT vs IC 4.8 0.5 10-3 IC (A) FIGURE 3. GUMMEL PLOT NOISE FIGURE (dB) 10-2 FIGURE 2. hFE vs IC 100 0 10-4 IC (A) 20 3rd ORDER INTERCEPT POINT 1dB COMPRESSION POINT 0 -20 VCE = 5V -40 -60 -80 -100 -30 IC = 10mA f = 1GHz 3RD ORDER PRODUCTS -20 -10 0 PIN , INPUT POWER (dBm) 10 FIGURE 6. P1dB AND 3RD ORDER INTERCEPT HFA3102 Die Characteristics PROCESS: PASSIVATION: UHF-1 Type: Nitride Thickness: 4kÅ ±0.5kÅ DIE DIMENSIONS: SUBSTRATE POTENTIAL (Powered Up): 53 mils x 52 mils x 14 mils 1340µm x 1320µm x 355.6µm Floating METALIZATION: Type: Metal 1: AlCu(2%)/TiW Thickness: Metal 1: 8kÅ ±0.5kÅ Type: Metal 2: AlCu(2%) Thickness: Metal 2: 16kÅ ±0.8kÅ Metallization Mask Layout HFA3102 TOP VIEW 2 1 14 13 12 3 11 1340µm (53 mils) 4 10 5 6 7 8 9 1320µm (52 mils) Pad numbers correspond to the 14 pin SOIC pinout. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com 3-454