GULFSEMI 1N5620GP

1N5620GP
SINTERED GLASS JUNCTION
PLASTIC RECTIFIER
800V
VOLTAGE
VOLTAGE:800V
0A
CURRENT: 1.
1.0A
FEATURE
DO-15\DO-204AC
High temperature metallurgically bonded construction
Sintered glass cavity free junction
Low reverse current
Capability of meeting environmental standard of MIL-S-19500
High temperature soldering guaranteed
350°C /10sec/0.375”lead length at 5 lbs tension
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity: color band denotes cathode
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYMBOL
20GP
1N56
1N5620GP
units
Maximum Recurrent Peak Reverse Voltage
VRRM
800
V
Maximum RMS Voltage
VRMS
560
V
Maximum DC blocking Voltage
VDC
800
V
IR=50µA
VBR
880
V
Maximum Average Forward Rectified Current 3/8”lead
length at Ta=50℃
Peak Forward Surge Current 8.3ms single half sinewave superimposed on rated load
Maximum Forward Voltage at Forward Current 3.0A
and 25℃
Maximum DC Reverse Current
Ta =25℃
at rated DC blocking voltage
Ta =100℃
IFAV
1.0
A
IFSM
50
A
VF
1.3
V
IR
1.0
25.0
µA
Maximum Reverse Breakdown Voltage
Maximum Reverse Recovery Time
(Note 1)
Trr
2.0
µS
Typical Junction Capacitance
(Note 2)
Cj
50.0
pF
Typical Thermal Resistance
(Note 3)
Rth(ja)
35.0
℃ /W
Tstg, Tj
-65 to +175
℃
Storage and Operating Junction Temperature
Note:
1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 12.0Vdc
3. Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted
Rev.A1
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RATINGS AND CHARACTERISTIC CURVES 1N5620GP
Rev.A1
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