MICROSEMI 1N5956BG

DATA SHEET
1N5913B~1N5956B
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES
VOLTAGE
3.3 to 200 Volts
POWER
1.5 Watts
DO-41
Unit: inch(mm)
FEATURES
• Low profile package
.034(.86)
1.0(25.4)MIN.
• Built-in strain relief
• Low inductance
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
.205(5.2)
.160(4.1)
• Pb free product are available : 99% Sn can meet RoHS environment
substance directive request
.028(.71)
MECHANICALDATA
Case: JEDEC DO-41,Molded plastic over passivated junction.
Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
1.0(25.4)MIN.
.107(2.7)
Polarity: Color band denotes positive end (cathode)
Standard packing: 52mm tape
.080(2.0)
Weight: 0.012 ounce, 0.3 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
DC Power Dissipation on TA=75 OC ,Measure at Zero Lead Length
Derate above 75OC ( NOTE 1)
Operating Junction and StorageTemperature Range
Symbol
Value
Units
PD
1. 5
Watts
TJ , TSTG
-50 to +150
O
C
NOTES:
1.Mounted on 5.0mm2 (.013mm thick) land areas.
REV.0-MAR.23.2005
PAGE . 1
N o m i na l Ze ne r V o l t a g e
Part Number
Maximum
Leakage Current
M a x i m u m Z e n e r Im p e d a n c e
IR
VR
No m. V
V Z @ IZT
M i n. V
M a x. V
O hm s
mA
O hm s
mA
µA
V
1N5913B
3.3
3.14
3.47
10
113.6
500
1
50
1
1N5914B
3.6
3.42
3.78
9
104.2
500
1
35.5
1
1N5915B
3.9
3.71
4.1
7.5
96.1
500
1
12.5
1
1N5916B
4.3
4.09
4.52
6
87.2
500
1
2.5
1
1N5917B
4.7
4.47
4.94
5
79.8
500
1
2.5
1.5
1N5918B
5.1
4.85
5.36
4
73.5
350
1
2.5
2
1N5919B
5.6
5.32
5.88
2
66.9
250
1
2.5
3
1N5920B
6.2
5.89
6.51
2
60.5
200
1
2.5
4
1N5921B
6.8
6.46
7.14
2.5
55.1
200
1
2.5
5.2
1N5922B
7.5
7.13
7.88
3
50
400
0.5
2.5
6
1N5923B
8.2
7.79
8.61
3.5
45.7
400
0.5
2.5
6.5
1N5924B
9.1
8.65
9.56
4
41.2
500
0.5
2.5
7
1N5925B
10
9.5
10.5
4.5
37.5
500
0.25
2.5
8
1N5926B
11
10.45
11.55
5.5
34.1
550
0.25
0.5
8.4
1N5927B
12
11.4
12.6
6.5
31.2
550
0.25
0.5
9.1
1N5928B
13
12.35
13.65
7
28.8
550
0.25
0.5
9.9
1N5929B
15
14.25
15.75
9
25
600
0.25
0.5
11.4
1N5930B
16
15.2
16.8
10
23.4
600
0.25
0.5
12.2
1N5931B
18
17.1
18.9
12
20.8
650
0.25
0.5
13.7
1N5932B
20
19.0
21
14
18.7
650
0.25
0.5
15.2
1N5933B
22
20.9
23.1
17.5
17
650
0.25
0.5
16.7
1N5934B
24
22.8
25.2
19
15.6
700
0.25
0.5
18.2
1N5935B
27
25.65
28.35
23
13.9
700
0.25
0.5
20.6
1N5936B
30
28.5
31.5
26
12.5
750
0.25
0.5
22.8
1N5937B
33
31.35
34.65
33
11.4
800
0.25
0.5
25.1
1N5938B
36
34.2
37.8
38
10.4
850
0.25
0.5
27.4
1N5939B
39
37.05
40.95
45
9.6
900
0.25
0.5
29.7
1N5940B
43
40.85
45.15
53
8.7
950
0.25
0.5
32.7
1N5941B
47
44.65
49.35
67
8
1000
0.25
0.5
35.8
1N5942B
51
48.45
53.55
70
7.3
1100
0.25
0.5
38.8
1N5943B
56
53.2
58.8
86
6.7
1300
0.25
0.5
42.6
1N5944B
62
58.9
65.1
100
6
1500
0.25
0.5
47.1
1N5945B
68
64.6
71.4
120
5.5
1700
0.25
0.5
51.7
1N5946B
75
71.25
78.75
140
5
2000
0.25
0.5
56
1N5947B
82
77.9
86.1
160
4.6
2500
0.25
0.5
62.2
1N5948B
91
86.45
95.55
200
4.1
3000
0.25
0.5
69.2
1N5949B
100
95
105
250
3.7
3100
0.25
0.5
76
1N5950B
110
104.5
115.5
300
3.4
4000
0.25
0.5
83.6
1N5951B
120
114
126
380
3.1
4500
0.25
0.5
91.2
REV.0-MAR.23.2005
Z ZT @ IZT
Z ZK @ IZK
PAGE . 2
N o m i na l Ze ne r V o l t a g e
Part Number
Maximum
Leakage Current
M a x i m u m Z e n e r Im p e d a n c e
V Z @ IZT
Z ZT @ IZT
Z ZK @ IZK
IR
VR
No m. V
M i n. V
M a x. V
O hm s
mA
O hm s
mA
µA
V
1N5952B
130
123.5
136.5
450
2.9
5000
0.25
0.5
98.8
1N5953B
150
142.5
157.5
600
2.5
6000
0.25
0.5
114
1N5954B
160
152
168
700
2.3
6500
0.25
0.5
121.6
1N5955B
180
171
189
900
2.1
7000
0.25
0.5
136.8
1N5956B
200
190
210
1200
1.9
8000
0.25
0.5
152
REV.0-MAR.23.2005
PAGE . 3
2
1.5
1
0.5
0
0
20
40
60
80
100
120 140 150 180
qvz, TEMPERATURE COEFICENT (mV/ OC)
MAXIMUM POWER DISSIPATION, Watts
2.5
10
V @I
Z ZT
8
6
4
2
0
-2
-4
2
200
V @I
Z
ZT
70
50
30
20
10
20
10
12
Fig.2 T emperature coeeficient v.s. zener voltage,Vz(V)
Zz, DYNAMIC IMPEDANCE (OHMS)
qvz, TEMPERATURE COEFICENT (mV/ OC)
Fig.1 Steady State Power Derating
10
8
V , ZENER VOLTAGE (VOLTS)
Z
O
LEAD TEMPERATURE, C
100
6
4
50
30
1K
5 00
T =2
25 O C
J
I (r ms ) = 0 . 1 I (dc)
Z
Z
2 00
1 00
50
20
10
5
22V
12V
2
6.8 V
1
0.5
Vz, ZENER VOLTAGE (VOLTS)
1
5
2
10
20
50 100
200
500
Iz, ZENER TEST CURRENT (mA)
Fig.4 Z ener impedance v.s. zener current
Fig.3 T emperature coeeficient v.s. zener voltage,Vz(V)
I Z (dc)=1mA
100
70
50
30
20
10mA
10
7
5
3
2
I Z (rms)=0.1I Z (dc)
20mA
5
7
10
20 3 0
40
50 60
70
100
Vz, ZENER VOLTAGE (VOLTS)
Fig.5 Z ener impedance v.s. zener voltage
REV.0-MAR.23.2005
Ppk, PEAKSURGE POWER (WATTS)
Zz, DYNAMIC IMPEDANCE (OHMS)
1K
200
RECTANGULAR
NONREPETITIVE
WAVEFORM
O
T J =25 C PRIOR
TO INTIAL PULSE
500
300
200
100
50
30
20
10
0.1 0.20.3 0.5
1
2 3
5
10 20 30 50
100
PW, PULSE WIDTH (ms)
Fig.6 Maximum Surge Power
PAGE . 4
100
Iz, ZENER CURRENT (mA)
Iz, ZENER CURRENT (mA)
100
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0
1
2
3
4
5
6
7
8
Vz, ZENER VOLTAGE (VOLTS)
Fig.7 Vz = 6.8 thru 10 Volts
9
10
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0
10
20
30
40
50
60
70
80
90 100
Vz, ZENER VOLTAGE (VOLTS)
Fig.8 Vz = 12 thru 82 Volts
NOTE 3. ZENER VOLTAGE (Vz) MEASUREMENT
Nominal zener voltage is measured with the device function in thermal equilibrium with ambient
O
temperature at 25 C
NOTE 4. ZENER IMPEDANCE (Zz) DERIVATION
Zzt and Zzk are measured by dividing the ac voltage drop across the device by the accurrent applied.
The specified limits are for Iz(ac) = 0.1 Iz, (dc) with the ac freqency = 60Hz
REV.0-MAR.23.2005
PAGE . 5