MICROSEMI 1N6660R

A Microsemi Company
580 PLEASANT ST.
WATERTOWN, MA 02172
PHONE: (617) 924-9280
FAX: (617) 924-1235
MIL -S-19500/608
Features
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1N6660
1N6660R
Low Reverse Leakage
Low Forward Voltage Drop
Guard Ring for Overvoltage Protection
Isolated Hermetically Sealed Power Package
Ceramic Seals for Improved Hermeticity
Custom Lead Forming Available
Eutectic Die Attach
150οC Operating Temperature
Space Level Screening Available
Available in TO-254Z Packaging
30 Amp / 45 VOLTS
COMMON CATHODE
OR
COMMON ANODE
SCHOTTKY RECTIFIER
Maximum Ratings (per diode)
TO-254
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Peak Repetitive Reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Forward Current, 25 °C
VRWM
VRRM
VR
IO
Peak Surge Forward Current @
tp = 8.3 ms, half sinewave,
Io = 0; VRM = 0
Peak Reverse Surge Current @
tp = 30µs, VRSM = 54 V min,
L = 260 µH
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to
Ambient
Operating Junction Temperature
IFSM
45 V
45 V
45 V
15 A
Note 1
300 Apk
IRRM
2A
RΘjc
RΘja
1.65 °C/W
40°C/W
Tj
-65°C to
150°C
-65°C to
150°C
Storage Temperature
Electrical Characteristics
Parameter
Symbol
Maximum
Instantaneous
Forward
Voltage
VF
Maximum DC
Reverse
Current At
Rated DC
Blocking
Voltage
Junction
Capacitance
IR
Cj
Tstg
per diode @ 25°°C Unless Otherwise Specified
Typical
MA
0.55V
0.75V
1.0V
0.80V
50 µA
1 mA
40 mA
2000
pF
Test Conditions
IF = 5 A; TJ = 25°C*
IF = 15 A; TJ = 25°C*
IF = 30 A; TJ = 25°C*
IF = 15 A; TJ =- 55°C*
TJ = 25°C
TJ = 125°C
VR = 5 V, f = 1 MHz
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
Note:
1. Derate linearly @ 300mA/ °C from T J = TC = + 100°C to 150°C
MSC0268A.DOC
REVISED: 05-01-97