HMC260 v04.1007 GaAs MMIC FUNDAMENTAL MIXER, 14 - 26 GHz Typical Applications Features The HMC260 is ideal for: Passive: No DC Bias Required • Point-to-Point Radios Input IP3: +20 dBm • Point-to-Multi-Point Radios LO/RF Isolation: 39 dB Small Size: 1.0 x 0.55 x 0.1 mm MIXERS - DOUBLE-BALANCED - CHIP 4 Functional Diagram General Description The HMC260 is a passive double balanced mixer that can be used as an upconverter or downconverter between 14 and 26 GHz. The miniature monolithic mixer (MMIC) requires no external components or matching circuitry. The HMC260 provides excellent LO to RF and LO to IF suppression due to optimized balun structures. The mixer operates with LO drive levels above +9 dBm. Measurements were made with the chip mounted and bonded into in a 50 ohm test fixture. Data includes the parasitic effects of wire bond assembly. Connections were made with a 3 mil ribbon bond with minimal length (<12 mil). Electrical Specifi cations, TA = +25° C LO = +13 dBm, IF = 1 GHz Parameter Units Min. Typ. Max. Frequency Range, RF & LO 14 - 26 GHz Frequency Range, IF DC - 8 GHz Conversion Loss Noise Figure (SSB) 7.5 10.5 dB 7.5 10.5 dB LO to RF Isolation 30 39 dB LO to IF Isolation 25 35 dB RF to IF Isolation 18 25 dB IP3 (Input) 13 20 dBm IP2 (Input) 45 55 dBm 1 dB Gain Compression (Input) 6 11 dBm *Unless otherwise noted, all measurements performed as downconverter, IF= 1 GHz. 4 - 36 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC260 v04.1007 GaAs MMIC FUNDAMENTAL MIXER, 14 - 26 GHz Conversion Gain vs. Temperature @ LO = +13 dBm Isolation @ LO = +13 dBm 0 RF/IF LO/RF LO/IF -10 -6 -9 + 25 C + 85 C - 55 C -12 -20 -30 4 -40 -50 -15 -60 12 14 16 18 20 22 24 26 12 14 16 FREQUENCY (GHz) 0 -3 -5 -6 -9 +9 dBm +11 dBm +13 dBm +15 dBm 22 24 26 -10 -15 LO RF -20 -15 -25 12 14 16 18 20 22 24 26 12 14 16 FREQUENCY (GHz) 20 22 24 26 Upconverter Performance Conversion Gain @ LO = +13 dBm 0 -4 -4 CONVERSION GAIN (dB) 0 -8 -12 IF Return Loss Conversion Gain -16 18 FREQUENCY (GHz) IF Bandwidth @ LO = +13 dBm RESPONSE (dB) 20 Return Loss @ LO = +13 dBm 0 RETURNLOSS (dB) CONVERSION GAIN (dB) Conversion Gain vs. LO Drive -12 18 FREQUENCY (GHz) -20 MIXERS - DOUBLE-BALANCED - CHIP -3 ISOLATION (dB) CONVERSION GAIN (dB) 0 -8 -12 -16 -20 0 2 4 6 8 FREQUENCY (GHz) 10 12 12 14 16 18 20 22 24 26 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 37 HMC260 v04.1007 GaAs MMIC FUNDAMENTAL MIXER, 14 - 26 GHz Input IP3 vs. Temperature @ LO = +13 dBm * 25 20 20 15 +11 dBm +13 dBm +15 dBm 10 5 15 + 25 C + 85 C - 55 C 10 5 0 0 14 16 18 20 22 24 26 14 16 LO FREQUENCY (GHz) 20 22 26 24 26 100 90 90 +11 dBm +13 dBm +15 dBm 80 IP2 (dBm) 80 70 60 50 50 40 + 25 C + 85 C - 55 C 70 60 40 14 16 18 20 22 24 26 14 16 LO FREQUENCY (GHz) 18 20 22 LO FREQUENCY (GHz) Input P1dB vs. Temperature @ LO = +13 dBm MxN Spurious Outputs 16 nLO mRF 14 12 10 + 25 C + 85 C - 55 C 8 0 1 2 3 4 xx 0 xx 9 19 xx 1 20 0 46 37 xx 2 64 72 68 82 95 3 xx 92 99 83 94 4 xx xx 102 >110 >110 RF = 21 GHz @ -10 dBm LO = 22 GHz @ +13 dBm All values in dBc below the IF output power level. 6 14 15 16 17 18 19 20 21 22 23 24 25 26 FREQUENCY (GHz) * Two-tone input power = -5 dBm each tone, 1 MHz spacing. 4 - 38 24 Input IP2 vs. Temperature @ LO = +13 dBm * 100 IP2 (dBm) 18 LO FREQUENCY (GHz) Input IP2 vs. LO Drive * P1dB (dBm) MIXERS - DOUBLE-BALANCED - CHIP 4 25 IP3 (dBm) IP3 (dBm) Input IP3 vs. LO Drive * For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC260 v04.1007 GaAs MMIC FUNDAMENTAL MIXER, 14 - 26 GHz Absolute Maximum Ratings RF / IF Input +15 dBm LO Drive +27 dBm Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C IF DC Current ±4 mA ESD Sensitivity (HBM) Class 1A ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. DIE THICKNESS IS .004”. Standard Alternate GP-5 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3. TYPICAL BOND PAD IS .004” SQUARE. 4. BOND PAD SPACING CENTER TO CENTER IS .006”. MIXERS - DOUBLE-BALANCED - CHIP 4 5. BACKSIDE METALLIZATION: GOLD. 6. BOND PAD METALLIZATION: GOLD. 7. BACKSIDE METAL IS GROUND. 8. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 - 39 HMC260 v04.1007 GaAs MMIC FUNDAMENTAL MIXER, 14 - 26 GHz Pad Descriptions MIXERS - DOUBLE-BALANCED - CHIP 4 4 - 40 Pad Number Function Description 1 LO This pin is DC coupled and matched to 50 Ohms. 2 RF This pin is DC coupled and matched to 50 Ohms. 3 IF This pin is DC coupled. For applications not requiring operation to DC this port should be DC blocked externally using a series capacitor. Choose value of capacitor to pass IF frequency desired. For operation to DC, this pin must not sink/source more than 40 mA of current or failure may result. Die Bottom GND This pin must be connected to RF ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC260 v04.1007 GaAs MMIC FUNDAMENTAL MIXER, 14 - 26 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on RF, LO & IF ports. 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 MIXERS - DOUBLE-BALANCED - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 4 - 41