HMC294 v01.0300 MIXERS - CHIP 3 GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz D E U N I T N O T C C S U I D D O PR Typical Applications Features The HMC294 is ideal for: Input IP3: +20 dBm • Microwave Point-to-Point Radios LO / RF Isolation: 27 dB • LMDS Passive: No DC Bias Required • SATCOM ns g i s De Small Size: 0.88 mm x 1.93 mm Functional Diagram ew N r fo d e Description d enGeneral m The HMC294 chip is a miniature passive GaAs com e R MMIC double-balanced mixer which can be used Not as an upconverter or downconverter from 25 - 40 GHz in a small chip area of 1.70 mm2. Excellent isolations are provided by on-chip baluns, which require no external components and no DC bias. All data is measured with the chip in a 50 ohm test fixture connected via 0.076 mm (3 mil) gold ribbon of minimal length <0.31 mm (<12 mils). Electrical Specifi cations, TA = +25° C, LO Drive = +14 dBm Parameter 3-1 Min. Typ. Frequency Range, RF & LO 25 - 40 Frequency Range, IF DC - 2 Max. Units GHz GHz Conversion Loss 10 13 dB Noise Figure (SSB) 10 13 dB LO to RF Isolation 22 27 dB LO to IF Isolation 31 38 dB RF to IF Isolation 27 33 dB IP3 (Input) 15 20 dBm IP2 (Input) 24 35 dBm 1 dB Gain Compression (Input) 9 12 dBm For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC294 v01.0300 GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz D E U N I T N O T C C S U I D D O PR Conversion Gain vs. Temperature @ LO = +14 dBm 0 RF/IF LO/RF LO/IF -10 wD e N or f d de n e mm o c Re t o N -55 C +25 C +85 C -15 -20 -30 -40 -50 -20 20 25 30 35 40 20 25 30 35 40 35 40 FREQUENCY (GHz) FREQUENCY (GHz) Conversion Gain vs. LO Drive Return Loss @ LO = +14 dBm 0 0 +8 dBm +10 dBm +12 dBm +14 dBm +16 dBm -5 RETURN LOSS (dB) CONVERSION GAIN (dB) 3 ns g i s e -10 -15 MIXERS - CHIP -10 -5 ISOLATION (dB) CONVERSION GAIN (dB) 0 Isolation @ LO = +14 dBm -5 -10 LO RF -15 -20 20 25 30 35 20 40 25 Upconverter Performance Conversion Gain @ LO = +14 dBm IF Bandwidth @ LO = +14 dBm 0 CONVERSION GAIN (dB) 0 -5 IF BANDWIDTH 30 FREQUENCY (GHz) FREQUENCY (GHz) -10 -15 -5 -10 -15 IF CONVERSION GAIN IF RETURN LOSS -20 -20 0 2 4 IF FREQUENCY (GHz) 6 8 20 25 30 35 40 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3-2 HMC294 v01.0300 GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz D E U N I T N O T C C S U I D D O PR Input IP3 vs. Temperature @ LO = +14 dBm Input IP3 vs. LO Drive 30 30 +8 dBm +12 dBm +10 dBm +14 dBm 15 25 INPUT IP3 (dBm) 20 10 20 15 ew N r fo d e end m com e R Not -55 C +25 C +85 C 5 20 25 30 35 40 20 25 FREQUENCY (GHz) 35 40 35 40 Input IP2 vs. Temperature @ LO = +14 dBm 50 40 40 INPUT IP2 (dBm) 50 30 20 +8 dBm +10 dBm +12 dBm +14 dBm 10 30 FREQUENCY (GHz) Input IP2 vs. LO Drive 30 20 -55 C +25 C +85 C 10 0 0 20 25 30 35 40 20 25 FREQUENCY (GHz) 30 FREQUENCY (GHz) Input P1dB vs. Temperature @ LO = +14 dBm MxN Spurious Outputs 16 nLO mRF 14 INPUT P1dB ns g i s De 10 5 INPUT IP2 (dBm) MIXERS - CHIP 3 INPUT IP3 (dBm) 25 12 0 1 0 xx 3.9 1 25 2 3 10 2 0 47 91 59 >110 4 3 86 68 105 >110 106 -55 C 8 RF = 35 GHz @ -10 dBm LO = 34 GHz @ +14 dBm All values in dBc below the IF power level. +25 C +85 C 6 20 25 30 35 40 FREQUENCY (GHz) 3-3 4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC294 v01.0300 GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz D E U N I T N O T C C S U I D D O PR Absolute Maximum Ratings RF / IF Input +13 dBm +27 dBm Storage Temperature -65 to +150 °C Operating Temperature -55 to +125 °C wD e N or f d de n e mm o c Re t o N %,%#42/34!4)#3%.3)4)6%$%6)#% /"3%26%(!.$,).'02%#!54)/.3 ns g i s e Outline Drawing Die Packaging Information [1] 3 MIXERS - CHIP LO Drive NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. Standard Alternate WP-4 [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 2. DIE THICKNESS IS .004”. 3. TYPICAL BOND PAD IS .004” SQUARE. 4. BACKSIDE METALLIZATION: GOLD. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3-4 HMC294 v01.0300 GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz D E U N I T N O T C C S U I D D O PR Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). MIXERS - CHIP 3 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) ew N r Microstrip substrates should be brought as close to the die as possible in order to fo minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm e (3 d mils). d mils) is Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm en(<12 recommended to minimize inductance on RF, LO & IF ports. m com e R Handling Precautions ot N damage. Follow these precautions to avoid permanent Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting ns g i s De RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). 3-5 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC294 Notes: GaAs MMIC DOUBLE-BALANCED MIXER, 25 - 40 GHz D E U N I T N O T C C S U I D D O PR wD e N or f d de n e mm o c Re t o N ns g i s e For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 3 MIXERS - CHIP v01.0300 3-6