BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode 1SS355 FEATURES z Pb Small Surface Mounting Type: Lead-free SOD-323 z High Speed :t=1.2ns Typ. z High Reliability With High Surge Current Handing Capability. APPLICATIONS z SOD-323 High speed switching ORDERING INFORMATION Type No. Marking Package Code 1SS355 A SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Non-Repetitive Peak reverse voltage VRM 90 V DC Reverse Voltage VR 80 V Peak forward Current IFM 225 mA Average Rectified Output Current IO 100 mA Surge current (1s) Isurge 500 mA Power Dissipation PD 200 mW Junction temperature Tj 125 ℃ Storage temperature TSTG -55~+125 ℃ Document number: BL/SSSDB001 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode 1SS355 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Forward voltage Min. Typ. Max. Unit Conditions VF 1.2 V IF=100mA Reverse current IR 0.1 μA VR=80V Capacitance between terminals CT 3 pF VR=0.5V,f=1MHz Reverse Recovery Time trr 4 ns IF=10mA,VR=6V,RL=100Ω TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSDB001 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Diode 1SS355 PACKAGE OUTLINE Plastic surface mounted package SOD-323 SOD-323 K B C A D J Min Max A 1.275 1.325 B 1.675 1.725 C 0.9 Typical D 0.25 0.35 E 0.27 0.37 H 0.02 0.1 J H E Dim K 0.1 Typical 2.6 2.7 All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping 1SS355 SOD-323 3000/Tape&Reel Document number: BL/SSSDB001 Rev.A www.galaxycn.com 3