HT93LC56 CMOS 2K 3-Wire Serial EEPROM Features · Operating voltage VCC - Read: 2.0V~5.5V - Write: 2.4V~5.5V · Automatic erase-before-write operation · Word/chip erase and write operation · Write operation with built-in timer · Low power consumption - Operating: 5mA max. · Software controlled write protection · 10-year data retention after 100K rewrite cycles - Standby: 10mA max. · 106 rewrite cycles per word · User selectable internal organization - 2K(HT93LC56): 256´8 or 128´16 · Commercial temperature range (0°C to +70°C) · 8-pin DIP/SOP package · 3-wire Serial Interface · Write cycle time: 5ms max. General Description is optimized for use in many industrial and commercial applications where low power and low voltage operation are essential. By popular microcontroller, the versatile serial interface including chip select (CS), serial clock (SK), data input (DI) and data output (DO) can be easily controlled. The HT93LC56 is a 2K-bit low voltage nonvolatile, serial electrically erasable programmable read only memory device using the CMOS floating gate process. Its 2048 bits of memory are organized into 128 words of 16 bits each when the ORG pin is connected to VCC or organized into 256 words of 8 bits each when it is tied to VSS. The device Block Diagram C o n tro l L o g ic a n d C lo c k G e n e ra to r C S S K O R G A d d re s s R e g is te r V C C A d d re s s D e c o d e r V S S D I M e m o r y C e ll A rra y 2 K : (2 5 6 ´ 8 o r 1 2 8 ´ 1 6 ) D a ta R e g is te r O u tp u t B u ffe r D O Pin Assignment N C 1 8 O R G C S 1 8 V C C V C C 2 7 V S S S K 2 7 N C O R G C S 3 6 D O 3 6 N C V S S S K 4 5 D I 4 5 V S S C S 1 8 V C C S K 2 7 N C 3 6 4 5 D I D O H T 9 3 L C 5 6 8 D IP -A /S O P -A Rev. 1.20 D I D O H T 9 3 L C 5 6 8 S O P -B H T 9 3 L C 5 6 8 S O P -C 1 October 26, 2001 HT93LC56 Pin Description Pin Name I/O Description CS I Chip select input SK I Serial clock input DI I Serial data input DO O Serial data output VSS ¾ Negative power supply, ground ORG I Internal Organization When ORG is connected to VDD or ORG is floated, the (´16) memory organization is selected. When ORG is tied to VSS, the (´8) memory organization is selected. There is an internal pull-up resistor on the ORG pin. (HT93LC56-A) NC ¾ No connection VCC ¾ Positive power supply Absolute Maximum Ratings Operation Temperature (Commercial)..........................................................................................................0°C to 70°C Applied VCC Voltage with Respect to VSS..................................................................................................-0.3V to 6.0V Applied Voltage on any Pin with Respect to VSS..................................................................................................VSS-0.3V to VCC+0.3V Supply READ Voltage ....................................................................................................................................2V to 5.5V Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability. D.C. Characteristics Symbol VCC ICC1 Parameter Operating Voltage Operating Current (TTL) Test Conditions Min. Typ. Max. Unit Read 2.0 ¾ 5.5 V Write 2.4 ¾ 5.5 V 5V DO unload, SK=1MHz ¾ ¾ 5 mA 5V DO unload, SK=1MHz ¾ ¾ 5 mA VCC ¾ Conditions ICC2 Operating Current (CMOS) DO unload, SK=250kHz ¾ ¾ 5 mA ISTB Standby Current (CMOS) 5V CS=SK=DI=0V ¾ ¾ 10 mA ILI Input Leakage Current 5V VIN=VSS~VCC 0 ¾ 1 mA ILO Output Leakage Current 5V VOUT=VSS~VCC, CS=0V VIL VIH VOL VOH Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage 2~5.5V ¾ 5V 0 ¾ 1 mA 0 ¾ 0.8 V 2~5.5V ¾ 0 ¾ 0.1VCC V 5V ¾ 2 ¾ VCC V ¾ 0.9VCC ¾ VCC V 5V IOL=2.1mA ¾ ¾ 0.4 V 2~5.5V IOL=10mA ¾ ¾ 0.2 V 2~5.5V 5V IOH=-400mA 2.4 ¾ ¾ V 2~5.5V IOH=-10mA VCC-0.2 ¾ ¾ V CIN Input Capacitance ¾ VIN=0V, f=250kHz ¾ ¾ 5 pF COUT Output Capacitance ¾ VOUT=0V, f=250kHz ¾ ¾ 5 pF Rev. 1.20 2 October 26, 2001 HT93LC56 A.C. Characteristics Symbol Parameter VCC=2V* VCC=5V±10% VCC=3V±10% Min. Max. Min. Max. Min. Max. 0 2000 0 500 0 250 kHz Unit fSK Clock Frequency tSKH SK High Time 250 ¾ 1000 ¾ 2000 ¾ ns tSKL SK Low Time 250 ¾ 1000 ¾ 2000 ¾ ns tCSS CS Setup Time 50 ¾ 200 ¾ 200 ¾ ns tCSH CS Hold Time 0 ¾ 0 ¾ 0 ¾ ns tCDS CS Deselect Time 250 ¾ 250 ¾ 1000 ¾ ns tDIS DI Setup Time 100 ¾ 200 ¾ 400 ¾ ns tDIH DI Hold Time 100 ¾ 200 ¾ 400 ¾ ns tPD1 DO Delay to ²1² ¾ 250 ¾ 1000 ¾ 2000 ns tPD0 DO Delay to ²0² ¾ 250 ¾ 1000 ¾ 2000 ns tSV Status Valid Time ¾ 250 ¾ 250 ¾ ¾ ns tHV DO Disable Time 100 ¾ 400 ¾ 400 ¾ ns tPR Write Cycle Time ¾ 5 ¾ 5 ¾ ¾ ms * For Read Operating Only A.C. test conditions Input rise and fall time: 5ns (1V to 2V) Input and output timing reference levels: 1.5V Output load circuit: See Figure below. V C C = 1 .9 5 2 V 8 0 0 W D O 1 0 0 p F * * Including scope and jig tC S S tC C S tS S K D I D O Rev. 1.20 tD IS tS K H K L tC t D IH V a lid D a ta tP D S S H V a lid D a ta tP D 0 D 1 H i- Z 3 October 26, 2001 HT93LC56 Functional Description The HT93LC56 is accessed via a three-wire serial communication interface. The device is arranged into 128 words by 16 bits or 256 words by 8 bits depending whether the ORG pin is connected to VCC or VSS. The HT93LC56 contains seven instructions: READ, ERASE, WRITE, EWEN, EWDS, ERAL and WRAL. When the user selectable internal organization is arranged into 128´16 (256´8), these instructions are all made up of 11(12) bits data: 1 start bit, 2 op code bits and 8(9) address bits. ERASE The ERASE instruction erases data at the specified addresses in the programming enable mode. After the ERASE op-code and the specified address have been issued, the data erase is activated by the falling edge of CS. Since the internal auto-timing generator provides all timing signals for the internal erase, so the SK clock is not required. During the internal erase, we can verify the busy/ready status if CS is high. The DO pin will remain low but when the operation is over, the DO pin will return to high and further instructions can be executed. By using the control signal CS, SK and data input signal DI, these instructions can be given to the HT93LC56. These serial instruction data presented at the DI input will be written into the device at the rising edge of SK. During the READ cycle, DO pin acts as the data output and during the WRITE or ERASE cycle, DO pin indicates the BUSY/READY status. When the DO pin is active for read data or as a BUSY/READY indicator the CS pin must be high; otherwise DO pin will be in a high-impedance state. For successful instructions, CS must be low once after the instruction is sent. After power on, the device is by default in the EWDS state. And, an EWEN instruction must be performed before any ERASE or WRITE instruction can be executed. The following are the functional descriptions and timing diagrams of all seven instructions. WRITE The WRITE instruction writes data into the device at the specified addresses in the programming enable mode. After the WRITE op-code and the specified address and data have been issued, the data writing is activated by the falling edge of CS. Since the internal auto-timing generator provides all timing signal for the internal writing, so the SK clock is not required. The auto-timing write cycle includes an automatic erase-before-write capability. So, it is not necessary to erase data before the WRITE instruction. During the internal writing, we can verify the busy/ready status if CS is high. The DO pin will remain low but when the operation is over, the DO pin will return to high and further instructions can be executed. READ ERAL The READ instruction will stream out data at a specified address on the DO pin. The data on DO pin changes during the low-to-high edge of SK signal. The 8 bits or 16 bits data stream is preceded by a logical ²0² dummy bit. Irrespective of the condition of the EWEN or EWDS instruction, the READ command is always valid and independent of these two instructions. After the data word has been read the internal address will be automatically incremented by 1 allowing the next consecutive data word to be read out without entering further address data. The address will wrap around with CS High until CS returns to LOW. The ERAL instruction erases the entire 128´16 or 256´8 memory cells to logical ²1² state in the programming enable mode. After the erase-all instruction set has been issued, the data erase feature is activated by the falling edge of CS. Since the internal auto-timing generator provides all timing signal for the erase-all operation, so the SK clock is not required. During the internal erase-all operation, we can verify the busy/ready status if CS is high. The DO pin will remain low but when the operation is over, the DO pin will return to high and further instruction can be executed. EWEN/EWDS WRAL The EWEN/EWDS instruction will enable or disable the programming capabilities. At both the power on and power off state the device automatically entered the disable mode. Before a WRITE, ERASE, WRAL or ERAL instruction is given, the programming enable instruction EWEN must be issued, otherwise the ERASE/WRITE instruction is invalid. After the EWEN instruction is issued, the programming enable condition remains until power is turned off or a EWDS instruction is given. No data can be written into the device in the programming disabled state. By so doing, the internal memory data can be protected. The WRAL instruction writes data into the entire 128´16 or 256´8 memory cells in the programming enable mode. After the write-all instruction set has been issued, the data writing is activated by the falling edge of CS. Since the internal auto-timing generator provides all timing signals for the write-all operation, so the SK clock is not required. During the internal write-all operation, we can verify the busy/ready status if CS is high. The DO pin will remain low but when the operation is over the DO pin will return to high and further instruction can be executed. Rev. 1.20 4 October 26, 2001 HT93LC56 Timing Diagrams READ tC D S C S S K (1 ) 1 S ta r t b it D I H ig h D O 0 A N A 0 tH Z 0 D 0 D X D X Z H ig h - Z * * A d d r e s s p o in te r a u to m a tic a lly c y c le s to th e n e x t w o r d M o d e (X 1 6 ) A N A 6 A 7 D X D 1 5 D 7 (X 8 ) EWEN/EWDS C S S ta n d b y S K D I 0 (1 ) S ta r t b it 0 1 1 = E W E N 0 0 = E W D S WRITE tC C S D S v e r ify S ta n d b y S K D I D O Rev. 1.20 0 (1 ) S ta r t b it 1 A N A N -1 A N -2 A 1 A 0 D X D 0 tS H ig h - Z b u s y tP 5 tH V Z re a d y R October 26, 2001 HT93LC56 ERASE tC C S D S v e r ify S ta n d b y S K 1 (1 ) S ta r t b it D I A N 1 A N -1 A N -2 A 1 A 0 tS H ig h - Z D O Z re a d y b u s y tP tH V R ERAL tC C S D S v e r ify S ta n d b y S K 0 (1 ) S ta r t b it D I 0 1 0 tS H ig h - Z D O tH V re a d y b u s y tP Z R WRAL tC C S D S v e r ify S ta n d b y S K D I 0 (1 ) S ta r t b it 0 0 1 D X D 0 tS H ig h - Z D O b u s y tP tH V Z re a d y R Instruction Set Summary HT93LC56 Instruction Comments Start bit Op Code Address Data ORG=0 X8 ORG=1 X16 ORG=0 X8 ORG=1 X16 D7~D0 D15~D0 READ Read data 1 10 XA7~A0 XA6~A0 ERASE Erase data 1 11 XA7~A0 XA6~A0 ¾ ¾ WRITE Write data 1 01 XA7~A0 XA6~A0 D7~D0 D15~D0 EWEN Erase/Write Enable 1 00 11XXXXXXX 11XXXXXX ¾ ¾ EWDS Erase/Write Disable 1 00 00XXXXXXX 00XXXXXX ¾ ¾ ERAL Erase All 1 00 10XXXXXXX 10XXXXXX ¾ ¾ WRAL Write All 1 00 01XXXXXXX 01XXXXXX D7~D0 D15~D0 Note: ²X² stands for ²don¢t care² Rev. 1.20 6 October 26, 2001 HT93LC56 Holtek Semiconductor Inc. (Headquarters) No.3, Creation Rd. II, Science-based Industrial Park, Hsinchu, Taiwan Tel: 886-3-563-1999 Fax: 886-3-563-1189 Holtek Semiconductor Inc. (Sales Office) 11F, No.576, Sec.7 Chung Hsiao E. Rd., Taipei, Taiwan Tel: 886-2-2782-9635 Fax: 886-2-2782-9636 Fax: 886-2-2782-7128 (International sales hotline) Holtek Semiconductor (Hong Kong) Ltd. RM.711, Tower 2, Cheung Sha Wan Plaza, 833 Cheung Sha Wan Rd., Kowloon, Hong Kong Tel: 852-2-745-8288 Fax: 852-2-742-8657 Holtek Semiconductor (Shanghai) Inc. 7th Floor, Building 2, No.889, Yi Shan Rd., Shanghai, China Tel: 021-6485-5560 Fax: 021-6485-0313 Holmate Technology Corp. 48531 Warm Springs Boulevard, Suite 413, Fremont, CA 94539 Tel: 510-252-9880 Fax: 510-252-9885 Copyright Ó 2001 by HOLTEK SEMICONDUCTOR INC. The information appearing in this Data Sheet is believed to be accurate at the time of publication. However, Holtek assumes no responsibility arising from the use of the specifications described. The applications mentioned herein are used solely for the purpose of illustration and Holtek makes no warranty or representation that such applications will be suitable without further modification, nor recommends the use of its products for application that may present a risk to human life due to malfunction or otherwise. Holtek reserves the right to alter its products without prior notification. For the most up-to-date information, please visit our web site at http://www.holtek.com.tw. Rev. 1.20 7 October 26, 2001