HWL30NPA L-Band GaAs Power FET Autumn 2002 V1 Features • Low Cost GaAs Power FETs • Class A or Class AB Operation • High Efficiency • 3V to 6V Operation 1 Pin 1: Source Pin 2: Gate Pin 3: Drain Description 2 1 3 The HWL30NPA is a Medium Power GaAs FET using surface mount type plastic package for various L-band applications. It is suitable for various 900 MHz, 1900 MHz cellular/wireless applications. Absolute Maximum Ratings VDS Drain to Source Voltage +7V VGS Gate to Source Voltage -5V ID Drain Current IDSS IG Gate Current 3mA TCH Channel Temperature 150°C TSTG Storage Temperature -65 to +150°C Total Power Dissipation 2.8W PT * * PA Package (SOT-89) Outline Dimensions mounted on an infinite heat sink. Electrical Specifications (TA=25°C) f = 1900 MHz for all RF Tests Symbol Parameters & Conditions Units Min. Typ. Max. IDSS Saturated Current at VDS=3V, VGS=0V mA 500 600 900 VP Pinch-off Voltage at VDS=3V, ID=30mA V -3.5 -2.0 -1.5 gm Transconductance at VDS=3V, ID=300mA mS 200 300 - Rth Thermal Resistance °C/W - 35 45 P1dB Power Output at 1dB Compression Point VDS=3V, ID=0.5IDSS VDS=5V, ID=0.5IDSS dBm 24.5 27.5 25.5 28.5 - Gain at 1dB Compression Point VDS=3V, ID=0.5IDSS VDS=5V, ID=0.5IDSS dB 9 10 10 11 - Power-Added Efficiency (POUT = P1dB) VDS=3V, ID=0.5IDSS VDS=5V, ID=0.5IDSS % - 40 40 - G1dB PAE Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. HWL30NPA L-Band GaAs Power FET Autumn 2002 V1 Typical Performance at 25°°C Output Power & Efficiency vs Vds @ f=0.9GHz,Ids=0.5IDSS PAE (%) 60 Po (dBm) 35 30 55 25 50 20 45 15 40 10 1 2 3 4 Po PAE 35 6 Vds (V) 5 Output Power & Efficiency vs Vds @ f=1.9GHz,Ids=0.5IDSS PAE (%) 60 Po (dBm) 35 30 55 25 50 20 45 15 40 10 1 2 3 4 5 Po PAE 35 6 Vds (V) Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. HWL30NPA L-Band GaAs Power FET Autumn 2002 V1 Output Power & Efficiency & Gain vs Input Power @ f=0.9GHz, Vds=3V Po (dBm) 30 PAE (%) 60 25 50 20 40 15 30 10 Gain 5 20 Po Gain Eff 10 0 0 0 4 8 12 16 Pin (dBm) Output Power & Efficiency & Gain vs Input Power @ f=1.9GHz, Vds=3V Po (dBm) 30 PAE (%) 60 25 50 20 40 15 30 10 20 5 10 0 0 Po Gain Eff Gain 0 5 10 15 20 25 Pin (dBm) Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. HWL30NPA L-Band GaAs Power FET Autumn 2002 V1 Output Power & Efficiency & Gain vs Input Power @ f=0.9GHz, Vds=5V, IDS=0.5IDSS Po (dBm) 30 PAE (%) 70 60 25 50 20 Po Gain Eff 40 15 Gain 10 30 5 10 0 0 20 0 4 8 12 Pin (dBm) 16 Output Power & Efficiency & Gain vs Input Power @ f=1.9GHz, Vds=5V, IDS=0.5IDSS Po (dBm) 30 PAE (%) 70 60 25 50 20 Po Gain Eff 40 15 Gain 10 30 5 10 0 0 20 1 3 5 7 9 11 13 15 17 19 21 Pin (dBm) Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. HWL30NPA L-Band GaAs Power FET Autumn 2002 V1 Output Power & Efficiency & Gain vs Frequency @ Vds=3V, Ids=300mA Po (dBm) PAE (%) 30 60 25 55 20 Po Gain PAE 50 15 45 10 Gain 5 40 0 35 0.7 0.8 0.9 1.0 1.1 f (GHz) Output Power & Efficiency & Gain vs Frequency @ Vds=5V, Ids=300mA Po (dBm) PAE (%) 30 60 25 50 20 40 15 30 10 Gain 5 20 Po Gain PAE 10 0 0 1.6 1.7 1.8 1.9 2.0 2.1 f (GHz) Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. HWL30NPA L-Band GaAs Power FET Autumn 2002 V1 Power Derating Curve Total Power Dissipation,PT (W) 4 (25,2.8) 2 (150,0) 0 0 50 100 150 Case Temperature,TC (℃) Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. HWL30NPA L-Band GaAs Power FET Autumn 2002 V1 Small Signal Common Source Scattering Parameters S-MAGN AND ANGLES VDS=3V, IDS=0.5IDSS (GHz) lS11l ∠ANG lS21l ∠ANG lS12l ∠ANG lS22l ∠ANG 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 0.823 0.815 0.808 0.805 0.799 0.801 0.797 0.798 0.801 0.795 0.799 0.794 0.801 0.795 0.792 0.793 0.790 0.791 0.787 0.789 0.785 0.781 0.790 0.785 -124.08 -132.50 -139.69 -145.83 -151.61 -156.12 -160.71 -164.76 -168.30 -171.96 -175.00 -177.52 179.69 177.19 175.03 172.48 170.02 168.28 166.13 164.32 161.82 160.26 157.97 156.36 6.597 5.940 5.432 4.975 4.589 4.265 3.973 3.711 3.500 3.277 3.124 2.952 2.838 2.685 2.576 2.475 2.383 2.297 2.216 2.161 2.080 2.014 1.982 1.934 106.16 100.82 96.62 92.04 87.95 84.98 81.12 78.13 75.17 71.97 69.30 66.88 64.24 61.61 59.56 57.27 54.65 52.68 50.29 48.22 45.62 43.73 41.42 39.43 0.038 0.039 0.044 0.045 0.048 0.049 0.051 0.053 0.056 0.058 0.060 0.062 0.065 0.067 0.070 0.072 0.074 0.078 0.079 0.084 0.087 0.089 0.092 0.096 47.22 45.96 46.57 44.56 44.03 44.90 43.79 42.66 42.80 42.28 42.45 42.19 42.39 42.03 41.59 40.83 40.43 40.49 40.14 39.04 37.82 35.77 36.24 35.76 0.312 0.328 0.332 0.338 0.337 0.347 0.346 0.351 0.358 0.359 0.360 0.359 0.367 0.366 0.367 0.364 0.365 0.365 0.362 0.368 0.365 0.368 0.373 0.368 -169.26 -171.51 -174.06 -175.87 -176.95 -178.61 179.70 179.33 177.29 175.88 175.12 175.17 174.20 173.35 172.36 172.87 171.46 171.47 170.35 170.59 168.67 168.15 167.53 167.48 S-MAGN AND ANGLES VDS=5V, IDS=0.5IDSS (GHz) lS11l ∠ANG lS21l ∠ANG lS12l ∠ANG lS22l ∠ANG 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 0.813 0.805 0.798 0.793 0.788 0.790 0.788 0.788 0.791 0.785 0.789 0.785 0.791 0.786 0.783 0.785 0.783 0.783 0.780 0.782 0.778 0.774 0.784 0.780 -123.01 -131.28 -138.59 -144.68 -150.52 -154.88 -159.51 -163.52 -167.06 -170.83 -173.75 -176.28 -179.01 178.30 176.23 173.68 171.30 169.60 167.40 165.67 163.14 161.58 159.37 157.92 7.231 6.524 5.973 5.464 5.022 4.667 4.351 4.064 3.833 3.602 3.415 3.224 3.089 2.924 2.797 2.686 2.584 2.489 2.391 2.328 2.245 2.174 2.131 2.078 105.37 99.90 95.56 90.88 86.66 83.43 79.39 76.38 73.20 69.90 66.98 64.49 61.64 58.97 56.71 54.27 51.51 49.42 46.84 44.64 41.93 39.88 37.44 35.38 0.034 0.035 0.037 0.040 0.042 0.043 0.044 0.046 0.048 0.049 0.051 0.052 0.055 0.058 0.059 0.061 0.063 0.065 0.067 0.071 0.073 0.075 0.077 0.080 46.83 45.34 43.94 42.73 42.30 43.74 41.95 42.40 42.93 43.39 42.59 42.94 43.14 42.04 42.29 42.34 42.05 41.48 41.31 41.28 41.12 38.67 39.47 39.14 0.170 0.183 0.186 0.193 0.199 0.205 0.205 0.217 0.222 0.224 0.230 0.237 0.247 0.251 0.254 0.259 0.263 0.269 0.269 0.281 0.279 0.286 0.294 0.295 -136.95 -141.01 -145.96 -147.75 -148.75 -151.81 -152.16 -153.57 -155.52 -155.74 -157.08 -156.84 -158.26 -159.44 -159.80 -158.82 -160.00 -159.37 -160.21 -160.04 -160.84 -161.38 -161.26 -160.85 Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.