IRF IPS5751S

Data Sheet No.PD60197
IPS5751/IPS5751S
FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
Features
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•
•
•
•
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Product Summary
Over temperature protection (with auto-restart)
Over current shutdown
Active clamp
E.S.D protection
Status feedback
Open load detection
Logic ground isolated from power ground
Rds(on)
25mΩ (max)
V clamp
50V
Ishutdown
35A
Iopen load
1A
Description
The IPS5751/IPS5751S are fully protected five terminal
high side switch with built in short circuit, over-temperature, ESD protection, inductive load capability and
diagnostic feedback. The over-current protection latches
off the device if the output current exceeds Ishutdown.
It can be reset by turning the input pin low. The overtemperature protection turns off the high side switches
if the junction temperature exceeds Tshutdown. It will
automatically restart after the junction has cooled 7oC
below Tshutdown. A diagnostic pin is provided for status
feedback of over-current, over-temperature and open
load detection. The double level shifter circuitry allows
large offsets between the logic ground and the load
ground.
Truth Table
Typical Connection
Packages
Op. Conditions
Normal
Normal
Open load
Open load
Over current
Over current
Over-temperature
Over-temperature
In
Out
Dg
H
H
H
L
L
H
H
H
L
L
X
H
H L (latched)
L
L
L
H
H L (cycling) L (cycling)
L
L
H
+ VCC
+ 5v
15K
Status
feedback
Vcc
Dg
Logic
Rdg
Rin
Logic
signal
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control
5 Lead
SMD220 - IPS5751S
Out
In
Gnd
Load
Logic Gnd
Load Gnd
5 Lead
TO220 - IPS5751
1
IPS5751/IPS5751S
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters
are referenced to GROUND lead. (TAmbient = 25oC unless otherwise specified).
Symbol Parameter
Min.
Max.
Vout
Voffset
Vcc-45
Vcc+0.3
Maximum logic ground to load ground offset Vcc-45
Vcc+0.3
Vin
Maximum Input voltage
Iin, max
Vdg
-5
10
Maximum diagnostic output voltage
-0.3
5.5
V
Maximum diagnostic output current
-1
10
mA
Idg, max
Isd cont.
Maximum output voltage
-0.3
Maximum IN current
Units
Test Conditions
V
5.5
mA
Diode max. continuous current (1)
(Rth=60oC/W) IPS5751
—
2.8
(Rth=80oC/W) IPS5751S
—
2.2
—
45
—
4
Isd pulsed Diode max. pulsed current (1)
ESD1
Electrostatic discharge voltage (Human Body)
ESD2
Electrostatic discharge voltage (Machine Model)
Pd
Maximum power dissipation(1)
—
0.5
(Rth=60oC/W) IPS5751
—
2
(Rth=80oC/W)
—
1.56
IPS5751S
T j max.
Max. storage & operating junction temp.
-40
+150
T lead
Lead temperature (soldering 10 seconds)
—
300
—
45
Min.
Typ.
—
—
—
—
—
2
55
Vcc max. Maximum Vcc voltage
A
C=100pF, R=1500Ω,
kV
C=200pF, R=0Ω, L=10µH
W
o
C
V
Thermal Characteristics
Symbol Parameter
Rth
Rth
Rth
Rth
Rth
1
2
1
2
3
Thermal
Thermal
Thermal
Thermal
Thermal
resistance
resistance
resistance
resistance
resistance
junction to case
junction to ambient
with standard footprint
with 1" square footprint
junction to case
60
35
5
Max. Units Test Conditions
—
—
—
—
—
TO-220
o
C/W
D2PAK (SMD220)
(1) Limited by junction temperature (pulsed current limited also by internal wiring)
2
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IPS5751/IPS5751S
Recommended Operating Conditions
These values are given for a quick design. For operation outside these conditions, please consult the application notes.
Symbol Parameter
Min.
Max.
Vcc
VIH
VIL 1
Iout
5.5
4
-0.3
28
5.5
0.9
—
—
4
3.5
—
4
10
14
6
20
Continuous Vcc voltage
High level input voltage
Low level input voltage
Continuous output current
(Tambient = 85oC, Tj = 125oC, Rth = 60oC/W) IPS5751
(Tambient = 85oC, Tj = 125oC, Rth = 80oC/W) IPS5751S
Iout
Continuous output current
Tc=85 oC
(TCase = 85oC, IN = 5V, Tj = 125oC, Rth = 5oC/W)
Rin
Recommended resistor in series with IN pin
Rdg
Recommended resistor in series with DG pin
Units
V
A
kΩ
Static Electrical Characteristics
(Tj = 25oC, Vcc = 14V unless otherwise specified.)
Symbol Parameter
Rds(on)
@Tj=25oC
Rds(on)
Min.
Typ.
ON state resistance Tj = 25oC
—
19
Max. Units Test Conditions
25
ON state resistance @ Vcc = 6V
—
22
30
ON state resistance Tj = 150oC
—
32
—
Functional operating range
Vcc to OUT clamp voltage 1
Vcc to OUT clamp voltage 2
Body diode forward voltage
Output leakage current
5.5
45
—
—
—
—
49
50
0.9
10
35
—
60
1.2
50
Supply current when OFF
Supply current when ON
Ripple current when ON (AC RMS)
Low level diagnostic output voltage
Diagnostic output leakage current
—
—
—
—
—
10
4.5
20
0.3
1.5
50
10
—
0.45
10
IN high threshold voltage
IN low threshold voltage
On state IN positive current
Vcc UVLO positive going threshold
Vcc UVLO negative going threshold
Input hysteresis
—
1
—
—
3.0
0.2
2.7
2.0
30
4.7
4.4
0.6
3.4
—
80
5.5
—
1.5
(Vcc=6V)
Rds(on)
Vin = 5V, Iout = 14A
mΩ
Vin = 5V, Iout = 7A
Vin = 5V, Iout = 14A
@Tj=150oC
Vcc oper.
V clamp 1
V clamp 2
Vf
Iout
Id = 10mA (see Fig.1 & 2)
Id = Ishutdown (see Fig.1 & 2)
Id = 14A, Vin = 0V
Vout = 0V, Tj = 25oC
µA
leakage
Icc off
Icc on
Icc ac
V dgl
Idg
V
mA
µA
V
µA
Vin = 0V, Vout = 0V
Vin = 5V
Vin = 5V
Idg = 0.3 mA
Vdg = 4.5V
leakage
V ih
V il
Iin, on
Vccuv+
VccuvInhyst.
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V
µA
Vin = 4V
V
3
IPS5751/IPS5751S
Switching Electrical Characteristics
Vcc = 14V, Resistive Load = 1Ω, Tj = 25oC, (unless otherwise specified).
Symbol Parameter
Min.
Tdon
Tr1
Tr2
Turn-on delay time
Rise time to Vout = Vcc - 5V
Rise time from the end of Tr1
to Vout = 90% of Vcc
dV/dt (on) Turn ON dV/dt
E on
Turn ON energy
Td off
Turn-off delay time
Tf
Fall time to Vout = 10% of Vcc
dV/dt (off) Turn OFF dV/dt
Eoff
Turn OFF energy
Typ. Max. Units Test Conditions
—
—
5
4
20
20
—
—
—
—
—
—
—
65
3
2
65
8
5
0.75
150
6
—
150
20
10
—
Min.
Typ.
—
—
22
0.3
—
—
165
158
35
1
50
7
µs
See figure 3
V/µs
mJ
µs
See figure 4
V/µs
mJ
Protection Characteristics
Symbol Parameter
T sd+
TsdI sd
Iopen load
Treset
T dg
Over-temp. positive going threshold
Over-temp. negative going threshold
Over-current threshold
Open load detection threshold
Minimum time to reset protections
Blanking time before considering Dg
Max. Units Test Conditions
o
C
C
A
A
µs
µs
—
—
50
2
—
100
o
See fig. 2
See fig. 2
See fig. 2
Vin = 0V
Part turned on with Vin =5V
Functional Block Diagram (All values are typical)
VCC
4.7 V
50V
4.4 V
Under voltage
lock out
62 V
Charge
pump
2.6 V
Level
IN
2.0 V
8V
driver
shift
200 KΩ
S
DG
R
Q
Over
current
Over
temperature
+
35 A
165°C
8V
158°C
Tj
+
40 Ω
Open load
GND
4
22 mV
-
VOUT
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IPS5751/IPS5751S
Lead Assignments
3 (Vcc)
3 (Vcc)
1 - Ground
2 - In
3 - Vcc
4 - DG
5 - Out
12345
12345
5 Lead - D2PAK (SMD220)
5 Lead - TO220
IPS5751
IPS5751S
(qualifications based on AEC Q 101)
(qualifications based on industrial level)
Part Number
T clamp
Vin
5V
0V
Vin
t < T reset
Iout
t > T reset
I shutdown
I shutdown
OI
Iout
( + Vcc )
Out
T
0V
T shutdown +
Tsd+
V clamp
T shutdown -
( see Appl . Notes to evaluate power dissipation )
Figure 1 - Active clamp waveforms
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Figure 2 - Protection timing diagram
5
IPS5751/IPS5751S
Vin
Vin
Vcc
90%
Vcc - 5V
90%
Vout
dV/dt off
dV/dt on
Vout
10%
Td on
10%
Tr 1
Tr 2
Td off
E1(t)
Tf
Iout1
Eon1
Iout2
Resistive load
E2 (t)
Inductive load
Eon2
Figure 3 - Switching times definition (turn-on)
Turn on energy with a resistive or an
inductive load
Figure 4 - Switching times definition (turn-off)
1,00E-02
Vin = 5 V
Dg Vcc
IN
1,00E-03
Out
+
Gnd
L
Vin
14 V
1,00E-04
Vout
Vin = 0 V (sleep mode)
R
5v
0v
1,00E-05
Iout
1,00E-06
Rem :
V load is negative during demagnetization
Figure 5 - Active clamp test circuit
6
0
5
10
15
20
25
30
35
Figure 6 - Icc (mA) Vs Vcc (V)
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IPS5751/IPS5751S
50
5
I_In
I out
Icc off
40
4
30
3
20
2
10
1
0
-50 -25
0
25
Vih
Vil
50
75 100 125 150
IN hys
0
-50
Figure 7 - Iin, Iout & Icc off ( µA ) Vs Tj (°C)
-25
0
25
50
75
100 125 150
Figure 8 - Vih, Vil & In hyst. (V) Vs Tj (°C)
40
30
25
30
20
15
20
10
10
5
0
0
0
5
10
15
20
Figure 9 - Rdson (mΩ) vs Vcc (V)
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25
-50
-25
0
25
50
75
100 125 150
Figure 10 - Rdson (mΩ) vs Tj (°C)
7
IPS5751/IPS5751S
50
100
current path capability
should be above those curves
40
30
Load characteristic should
be below those curves
20
10
Tamb=25C Rth=60°CW
Tamb=100°C Rth=60°C/W
0
-50
-25
0
25
50
75
100 125 150
10
1E-05 1E-04 0,001 0,01
Figure 11 - I shutdown (A) vs Tj (°C)
2
0,1
1
10
100
Figure 12 - Protection characteristic - (A) vs (S) *
30
rth = 5°C/W
rth = 15°C/W
rth = 30°C/W
T0220 free air 60°C/W
25
20
1
15
10
5
0
0
-50
-25
0
25
50
75
100 125 150
Figure 13 - I open load (A) vs Tj (°C)
-50
0
50
100
150
200
Figure 14 - Max. Cont. Ids ( A ) Vs
Amb. Temperature ( °C)
NOTE: * Over-current protection for less than 1ms and thermal protection for durations higher than 1s.
8
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IPS5751/IPS5751S
100
100
single pulse
100 Hz rth=60°C/W dT=25°C
1kHz rth=60°C/W dT=25°C
10
10
1
rth std.footprint
rth junction to case
1
0 .0 0 1
0.01
0.1
1
10
0.1
1E-04 0.001
Figure 15 -Max. I clamp ( A ) Vs
Inductive Load ( m H )
0.01
0.1
1
10
100
10 0 0
Figure 16 - Transient Rth ( °C/W ) Vs Time (s)
4
10
I=Imax vs L
I=5A
I=1A
Eon
Eoff
1
2
0.1
0
0
5
10
15
20
25
Figure 17 - Eon, Eoff @ Vcc=14V (mJ) vs Iout (A)
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0.01
0.01
0.1
1
10
Figure 18 - Eon @ Vcc=14V (mJ) vs Inductance (mH)
9
IPS5751/IPS5751S
Tape & Reel - D2PAK (SMD220) - 5 Lead
01-3071 00 / 01-3072 00
Case Outline - TO220 (5 lead)
IRGB 01-3042 01
10
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IPS5751/IPS5751S
Case Outline - D2PAK (SMD220) - 5 Lead
01-3066 00
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice. 10/9/2002
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