Data Sheet No. PD60168-C IPS5551T FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features • • • • • • Product Summary Over temperature shutdown Over current shutdown Active clamp Input referenced to + Vcc E.S.D protection Input referenced to Vcc Description The IPS5551T is a fully protected three terminal high side switch with built-in short-circuit, over-temperature, ESD protection, inductive load capability. The input signal is referenced to Vcc. When the input voltage Vcc - Vin is higher than the specified threshold, the output power MOSFET is turned on. When the Vcc - Vin is lower than the specified Vil threshold, the output MOSFET is turned off. Input noise immunity is improved by an hysterisis. When the input is left floating, an internal current source pulls it up to Vcc. The overcurrent protection latches off the high side switch if the output current exceeds the specified Isd. The overtemperature protection latches off the switch if the junction temperature exceeds the specified value Tsd. The device is reset by opening the input pin high. Typical Connection Rds(on) 6.0mΩ (max) V clamp 40V Ishutdown 100A Vcc (op.) 5.5 - 18V Truth Table Op. Conditions Normal Normal Over current Over current Over-temperature Over-temperature In L H L H L H (3) Out H L L (latched) L L (latched) L (3) In is referenced to Vcc. In = L means (Vcc -Vin) >Vih In = H means (Vcc - Vin) <Vil Packages + VCC SUPER TO220 Vcc Logic Input signal control Out In Load SUPER SMD220 (Refer to lead assignment for correct pin configuration) www.irf.com 1 IPS5551T Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to Vcc lead. (Tj = 25 o C unless otherwise specified). PCB mounting uses the standard footprint with 70µm copper thickness Symbol Parameter Vcc -Vin max Maximum input voltage Vcc -Vin1 max Max. transient Input voltage (less than 1s) Iin max Maximum input current Vcc -Vout max Maximum output voltage Isd cont. Diode max. continuous current (1) (rth = 62oC/W) Isd1 cont. Min. Max. Units -0.3 30 -0.3 40 -1 20 mA -0.3 40 V — 2.8 V A Diode max. continuous current (1) (rth = 5oC/W) Test Conditions — 35 Isd pulsed Pd Diode max. pulsed current (1) — 100 Power dissipation (rth = 62oC/W) — 2 ESD1 Electrostatic discharge voltage (Human Body) — tbd W C = 100 pF, R = 1500Ω kV ESD2 Electrostatic discharge voltage (Machine Model) — tbd T stor. Tj max. Max. storage temperature -55 150 Max. junction temperature -40 150 Tlead Lead temperature (soldering 10 seconds) — 300 Typ. Max. Units Test Conditions o C = 200 pF, R = 0Ω, L=10µH C Thermal Characteristics Symbol Parameter Rth Rth Rth Rth 1 2 3 4 Thermal Thermal Thermal Thermal resistance resistance resistance resistance free air with standard footprint with 1" footprint junction to case 60 60 35 0.7 o C/W Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Vcc - Vin Vcc Iout I out 6 6 — 18 18 35 — 8 Continuous input voltage Supply to power ground voltage Continuous output current (rth c/amb. < 5oC/W, Tj = 125oC) Continuous output current o Tamb=85 C (TAmbient = 85oC, Tj = 125oC, free air) Units V A (1) Limited by junction temperature. Pulsed current is also limited by wiring 2 www.irf.com IPS5551T Static Electrical Characteristics (Tj = 25oC and Vcc = 14V unless otherwise specified.) Symbol Parameter Min. Typ. Max. Rds(on) 1 ON state resistance — 4.6 6.0 Rds(on) 2 Rds(on) 3 Vclamp 1 Vclamp 2 Vsd Vcc (op) Iq Iin Iin, on Vih Vil Vhys — — 35 — — 5.5 — 3 — — 3 0.3 4.6 7.4 — — — 48 1 ON state resistance ON state resistance Tj = 150oC Vcc to Vout active clamp voltage Vcc to Vout active clamp voltage Body diode forward voltage Operating voltage range Quiescent current Input current Input current when ON High level input threshold voltage Low level input threshold voltage Input hysterisis 40 42 0.85 — 13 6.5 1.3 4.75 4.05 0.6 28 50 12 — 5.5 — 1.5 Units Test Conditions mΩ V µA mA V Iout=35A,Vcc -Vin=12V see Fig. 6 Iout=17A, Vcc -Vin= 6V Iout = 35A, Tj = 150oC Iout = 10mA Iout = 35A - t < 100us Id = 35A, Vcc -Vin = 0V Vcc-Vin=0V,Vcc-Vout= 12V Vcc - Vin = 14V Vcc - Vin = Vih Vcc - Vin (note 2) Vcc - Vin (note 2) Switching Electrical Characteristics Vcc = 14V, Resistive Load = 0.4Ω, Tj = 25oC, (unless otherwise specified). Symbol Parameter Tdon Tr 1 Tr 2 dV/dt (on) Eon Td off Tf dV/dt (off) Eoff Min. Typ. Max. Units Test Conditions Turn-on delay time to Vcc -Vout = 0.9 V cc Rise time to Vcc -Vout = 5 V Rise time from the end of Tr1 to Vcc -Vout = 0.1 Vcc — — 10 16 30 50 — 400 Turn on dV/dt Turn ON energy Turn-off delay time Vcc -Vout = 0.1 Vcc Fall time to Vcc -Vout = 0.9 Vcc Turn OFF dV/dt Turn OFF energy — — — — — — 200 1.2 25 130 25 2 6 Min. Typ. — 60 — 165 100 50 5 — 300 50 6 — µs See figure 2 V/µs mJ µs See figure 3 V/µs mJ Protection Characteristics Tj = 25oC, and Vcc = 14V (unless otherwise specified). Symbol Parameter T sd I sd Treset Over temperature shutdown threshold Over current shutdown threshold Minimum time for protection reset Max. Units Test Conditions — 150 — o C A µs See fig. 4 (2) Input threshold are measured directly between the input pin and the tab. Any parasitic resistance in common between the load current path and the input signal path can significantly affect the thresholds. www.irf.com 3 IPS5551T Functional Block Diagram VCC 40V clamp Charge pump 10k 6mA + 4.7V 35V 4.1V - IN S Q Level shift R Over curren Over temperatur driver + - 100A + Tj 165°C - VOUT Lead Assignments 2 (Vcc) 1 2 3 In Vcc Out Super TO220 4 2 ( Vcc ) 1 2 3 In Vcc Out (Advance Information) Super SMD220 www.irf.com IPS5551T Vcc-Vin Vcc-Vin max Vcc-Vin1 max Vcc-Vin (op) Vih Vil Vhys Vcc Vcc-Vout Vcc-Vout max Vcc-Vin Vclamp1 Vclamp2 In IPS 5551 Iin Iin max Iin1,2 Iin(on) Out Vcc 90% Iout Iout max -Ids cont. -Ids pulsed Iout 85°C Isd Iq Figure 1 - Voltages and currents definition Vcc-Vout DV/dt(on) 5V 10 % Td on Tr1 Tr2 Figure 2 - Switching time definitions (turn-on) Vcc-Vin Vcc-Vin 12V 0V Iout 90% t < T reset t > T reset OI shutdown Isd Vcc-Vout DV/dt(off) 10 % Tj Td off Tf OT shutdown Tjsd Figure 3 - Switching time definitions (turn-off) www.irf.com Figure 4 - Protection timing diagram 5 IPS5551T T clamp Vcc - Vin POWER Iout Iou Vclamp Vcc - Vout ( Vcc ) Measurement ( see Appl . Notes to evaluate power dissipation ) Figure 6 - Rds(on) measurement schematic Figure 5 - Active clamp waveforms 6 200 5 4 150 3 2 100 1 0 0 5 10 15 20 50 -5 0 Figure 7 - Rds(on) (mΩ) Vs Vcc- Vin (V) 6 0 50 100 150 Figure 8 - Normalized Rds(on) (%) Vs Tj (oC) www.irf.com IPS5551T 5 single pulse 10 Hz rth=60°C/W dT=25°C 1000 4 100Hz rth=60°C/W dT=25°C 100 3 10 2 1 1 0 0 20 40 60 80 0.1 100 0 .00 1 0 .01 0 .1 1 10 Figure 10 - Iclamp (A) Vs Inductive Load (µH) Figure 9 - Rds(on) (mΩ) Vs I out (A) 100 1000 Limited by package 80 Current path capability should be above this curve Rthc/amb= 1°C/W 60 Rthc/amb= 5°C/W 100 Rthc/amb= 10°C/W 40 Load characteristic should be below this curve Tj = 25 °c Rthc/amb= 20°C/W free air 20 Free air 10 0 25 50 75 100 125 Figure 11 - Max. load current (A) Vs Temperature (oC) www.irf.com 150 Figure 12 - Iout (A) Vs Protection resp. Time (ms) 7 IPS5551T 120 1 .0 0 E +0 2 100 Free air 1inch² PCB 1 .0 0 E +0 1 80 1 .0 0 E +0 0 Infinite heatsink 60 1 .0 0 E - 0 1 40 1 .0 0 E - 0 2 20 1 .0 0 E - 0 3 0 -50 0 50 100 1E-05 1E-04 0.001 0.01 150 0.1 1 10 100 1000 Figure 14 - Transient thermal impedance (oC/W) Vs Time (s) Figure 13 - Isd (A) Vs Tj (oC) 100 10 8 10 6 4 1 2 0.1 0 5 10 15 20 25 30 Figure 15 - Icc (mA) Vs Vcc-Vin (V) 8 35 0 -50 -25 0 25 50 75 100 125 150 Figure 16 - Iin (mA) Vs Tj (oC) www.irf.com IPS5551T 5 100 4 80 Eon VIH 3 Eoff 60 VIL Hysteresis 2 40 1 20 0 -50 0 -25 0 25 50 75 100 125 150 0 Figure 17 - Vih, Vil threshold (V) Vs Tj (oC) 10 20 30 40 50 60 70 Figure 18 - Eon, Eoff (mJ) Vs Iout (A) 100.00 I=Imax vs L (see fig.10) 10.00 30A I=10A 1.00 0.10 1E+06 1E+05 1E+04 1E+03 1E+02 1E+01 0.01 Figure 19 - E on (mJ) Vs Inductive load (µH) (Vcc = 14V, R load =0.5Ω) www.irf.com 9 IPS5551T DZ1 VCC R1 IN 12V Battery IPS5551 D2 OUT on LOAD off System ground Power ground DZ1, R1 : optional additional voltage transient protection D2 : optional additional reverse battery protection See application note for details Figure 20 - Automotive typical connection Case outline Super TO220 11.00 [.433] 10.00 [.394] A 5.00 [.196] 4.00 [.158] 9.00 [.354] 8.00 [.315] B 0.25 [.010] B A 1.50 [.059] 0.50 [.020] 13.50 [.531] 12.50 [.493] 4 15.00 [.590] 14.00 [.552] 1 2 3 LEAD AS S IGNMENTS MOS F ET 4.00 [.157] 3.50 [.138] 14.50 [.570] 13.00 [.512] 3X 2.55 [.100] 2X 1 - GATE 2 - DRAIN 3 - S OURCE 4 - DRAIN 4X 1.30 [.051] 0.90 [.036] 0.25 [.010] B A 1.00 [.039] 0.70 [.028] IGBT 1 - GATE 2 - COLLECTOR 3 - EMIT TER 4 - COLLECTOR O S 3.00 [.118] 2.50 [.099] 1. 2. 3. 4. DIMENSIONING & T OLERANCING PER ASME Y14.5M-1994. CONTROLLING DIMENSION: MILLIMET ER. DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES]. OUT LINE CONFORMS TO JEDEC OUT LINE T O-273AA. 01-3073 02 10 www.irf.com IPS5551T Case outline Super SMD220 (advance information) IRGB-012-012 5 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 6/25/2001 www.irf.com 11