ICSI IS61S6432

IS61S6432
IS61S6432
64K x 32 SYNCHRONOUS
PIPELINE STATIC RAM
FEATURES
DESCRIPTION
The ICSI IS61S6432 is a high-speed, low-power
synchronous static RAM designed to provide a burstable,
high-performance, secondary cache for the Pentium™,
680X0™, and PowerPC™ microprocessors. It is organized
as 65,536 words by 32 bits, fabricated with ICSI's advanced
CMOS technology. The device integrates a 2-bit burst
counter, high-speed SRAM core, and high-drive capability
outputs into a single monolithic circuit. All synchronous
inputs pass through registers controlled by a positive-edgetriggered single clock input.
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Pentium™ or linear burst sequence control using
MODE input
• Three chip enables for simple depth expansion
and address pipelining
• Common data inputs and data outputs
• Power-down control by ZZ input
• JEDEC 100-Pin LQFP and PQFP package
• Single +3.3V power supply
• Two Clock enables and one Clock disable to
eliminate multiple bank bus contention
• Control pins mode upon power-up:
– MODE in interleave burst mode
– ZZ in normal operation mode
These control pins can be connected to GNDQ
or VCCQ to alter their power-up state
• Industrial temperature available
Write cycles are internally self-timed and are initiated by the
rising edge of the clock input. Write cycles can be from one
to four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
BW1 controls DQ1-DQ8, BW2 controls DQ9-DQ16, BW3
controls DQ17-DQ24, BW4 controls DQ25-DQ32,
conditioned by BWE being LOW. A LOW on GW input would
cause all bytes to be written.
Bursts can be initiated with either ADSP (Address Status
Processor) or ADSC (Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally by the IS61S6432 and controlled by the ADV (burst
address advance) input pin.
Asynchronous signals include output enable (OE), sleep
mode input (ZZ), clock (CLK) and burst mode input (MODE).
A HIGH input on the ZZ pin puts the SRAM in the powerdown state. When ZZ is pulled LOW (or no connect), the
SRAM normally operates after three cycles of the wake-up
period. A LOW input, i.e., GNDQ, on MODE pin selects
LINEAR Burst. A VCCQ (or no connect) on MODE pin selects
INTERLEAVED Burst.
FAST ACCESS TIME
Symbol
Parameter
-200(1)
-166
-133
-117
-5
-6
-7
-8
Unit
tKQ
CLK Access Time
4
5
5
5
5
6
7
8
ns
tKC
Cycle Time
5
6
7.5
8.5
10
12
13
15
ns
—
Frequency
200
166
133
117
100
83
75
66
MHz
Note:
1. ADVANCE INFORMATION ONLY.
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc.
SSE003-0B
1
IS61S6432
BLOCK DIAGRAM
MODE
Q0
CLK
CLK
A0’
A0
BINARY
COUNTER
ADSC
ADSP
A15-A0
Q1
CE
ADV
A1’
A1
64K x 32
MEMORY
ARRAY
CLR
16
D
Q
14
16
ADDRESS
REGISTER
CE
CLK
32
GW
BWE
BW4
D
32
Q
DQ32-DQ25
BYTE WRITE
REGISTERS
CLK
D
BW3
Q
DQ24-DQ17
BYTE WRITE
REGISTERS
CLK
D
BW2
Q
DQ16-DQ9
BYTE WRITE
REGISTERS
CLK
D
BW1
Q
DQ8-DQ1
BYTE WRITE
REGISTERS
CLK
CE1
4
Q
CE2
D
CE3
ENABLE
REGISTER
INPUT
REGISTERS
CLK
32
OUTPUT
REGISTERS
CLK
DATA[32:1]
OE
CE
CLK
D
Q
ENABLE
DELAY
REGISTER
CLK
OE
2
Integrated Circuit Solution Inc.
SSE003-0B
IS61S6432
PIN CONFIGURATION
A6
A7
CE1
CE2
BW4
BW3
BW2
BW1
CE3
VCC
GND
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A8
A9
100-Pin LQFP and PQFP (Top View)
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
80
1
79
2
78
3
77
4
76
5
75
6
74
7
73
8
72
9
71
10
70
11
69
12
68
13
67
14
66
15
65
16
64
17
63
18
62
19
61
20
60
21
59
22
58
23
57
24
56
25
55
26
54
27
53
28
52
29
51
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
NC
DQ16
DQ15
VCCQ
GNDQ
DQ14
DQ13
DQ12
DQ11
GNDQ
VCCQ
DQ10
DQ9
GND
NC
VCC
ZZ
DQ8
DQ7
VCCQ
GNDQ
DQ6
DQ5
DQ4
DQ3
GNDQ
VCCQ
DQ2
DQ1
NC
MODE
A5
A4
A3
A2
A1
A0
NC
NC
GND
VCC
NC
NC
A10
A11
A12
A13
A14
A15
NC
NC
DQ17
DQ18
VCCQ
GNDQ
DQ19
DQ20
DQ21
DQ22
GNDQ
VCCQ
DQ23
DQ24
VCCQ
VCC
NC
GND
DQ25
DQ26
VCCQ
GNDQ
DQ27
DQ28
DQ29
DQ30
GNDQ
VCCQ
DQ31
DQ32
NC
PIN DESCRIPTIONS
A0-A15
Address Inputs
OE
Output Enable
CLK
Clock
DQ1-DQ32
Data Input/Output
ADSP
Processor Address Status
ZZ
Sleep Mode
ADSC
Controller Address Status
MODE
Burst Sequence Mode
ADV
Burst Address Advance
VCC
+3.3V Power Supply
BW1-BW4
Synchronous Byte Write Enable
GND
Ground
BWE
Byte Write Enable
VCCQ
Isolated Output Buffer Supply: +3.3V
GW
Global Write Enable
GNDQ
Isolated Output Buffer Ground
CE1, CE2, CE3
Synchronous Chip Enable
NC
No Connect
Integrated Circuit Solution Inc.
SSE003-0B
3
IS61S6432
TRUTH TABLE
Operation
Address
Used
CE1
CE2
CE3
Deselected, Power-down
Deselected, Power-down
Deselected, Power-down
Deselected, Power-down
Deselected, Power-down
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Write Cycle, Begin Burst
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Write Cycle, Continue Burst
Write Cycle, Continue Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Write Cycle, Suspend Burst
Write Cycle, Suspend Burst
None
None
None
None
None
External
External
External
External
External
Next
Next
Next
Next
Next
Next
Current
Current
Current
Current
Current
Current
H
L
L
L
L
L
L
L
L
L
X
X
H
H
X
H
X
X
H
H
X
H
X
L
X
L
X
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
H
X
H
L
L
L
L
L
X
X
X
X
X
X
X
X
X
X
X
X
ADSP ADSC
X
L
L
H
H
L
L
H
H
H
H
H
X
X
H
X
H
H
X
X
H
X
L
X
X
L
L
X
X
L
L
L
H
H
H
H
H
H
H
H
H
H
H
H
ADV WRITE
X
X
X
X
X
X
X
X
X
X
L
L
L
L
L
L
H
H
H
H
H
H
X
X
X
X
X
X
X
L
H
H
H
H
H
H
L
L
H
H
H
H
L
L
OE
DQ
X
X
X
X
X
L
H
X
L
H
L
H
L
H
X
X
L
H
L
H
X
X
High-Z
High-Z
High-Z
High-Z
High-Z
Q
High-Z
D
Q
High-Z
Q
High-Z
Q
High-Z
D
D
Q
High-Z
Q
High-Z
D
D
Notes:
1. All inputs except OE must meet setup and hold times for the Low-to-High transition of clock (CLK).
2. Wait states are inserted by suspending burst.
3. "X" means don't care. WRITE=L means any one or more byte write enable signals (BW1-BW4) and BWE are LOW or GW is
LOW. WRITE=H means all byte write enable signals are HIGH.
4. For a Write operation following a Read operation, OE must be HIGH before the input data required setup time and held
HIGH throughout the input data hold time.
5. ADSP LOW always initiates an internal READ at the Low-to-High edge of clock. A WRITE is performed by setting one or
more byte write enable signals and BWE LOW or GW LOW for the subsequent L-H edge of clock.
PARTIAL TRUTH TABLE
Function
READ
READ
WRITE Byte 1
WRITE All Bytes
WRITE All Bytes
4
GW
BWE
BW1
BW2
H
H
H
X
L
H
X
L
L
X
X
H
L
L
X
X
H
H
L
X
BW3 BW4
X
H
H
L
X
X
H
H
L
X
Integrated Circuit Solution Inc.
SSE003-0B
IS61S6432
INTERLEAVED BURST ADDRESS TABLE (MODE = VCCQ or No Connect)
External Address
A1 A0
1st Burst Address
A1 A0
2nd Burst Address
A1 A0
3rd Burst Address
A1 A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
LINEAR BURST ADDRESS TABLE (MODE = GNDQ)
0,0
A1’, A0’ = 1,1
0,1
1,0
ABSOLUTE MAXIMUM RATINGS(1,2,3)
Symbol
TBIAS
TSTG
PD
IOUT
VIN, VOUT
VIN
Parameter
Temperature Under Bias
Storage Temperature
Power Dissipation
Output Current (per I/O)
Voltage Relative to GND for I/O Pins
Voltage Relative to GND for for Address and Control Inputs
Value
–10 to +85
–55 to +150
1.8
100
–0.5 to VCCQ + 0.3
–0.5 to 5.5
Unit
°C
°C
W
mA
V
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages or electric fields; however,
precautions may be taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
Integrated Circuit Solution Inc.
SSE003-0B
VCC
3.3V +10%, –5%
3.3V +10%, –5%
5
IS61S6432
DC ELECTRICAL CHARACTERISTICS(1,2) (Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
VOH
Output HIGH Voltage
IOH = –5.0 mA
2.4
—
V
VOL
Output LOW Voltage
IOL = 5.0 mA
—
0.4
V
VIH
Input HIGH Voltage
2.0
VCCQ + 0.3
V
VIL
Input LOW Voltage
–0.3
0.8
V
ILI
Input Leakage Current
GND ≤ VIN ≤ VCCQ(2)
Com.
Ind.
–5
–10
5
10
µA
ILO
Output Leakage Current
GND ≤ VOUT ≤ VCCQ, OE = VIH
Com.
Ind.
–5
–10
5
10
µA
Notes:
1. MODE pin have an internal pull-up. ZZ pin has an internal pull-down. These pins may be a No Connect,
tied to GND,or tied to VCCQ.
2. MODE pin should be tied to Vcc or GND. They exhibit ±30 µA maximum leakage current when tied
to ≤ GND + 0.2V or ≥ Vcc – 0.2V.
POWER SUPPLY CHARACTERISTICS (Operating Range)
-200(1)
Min. Max.
Symbol Parameter
Test Conditions
ICC
AC Operating
Supply Current
Device Selected,
Com.
All Inputs = VIL or VIH
Ind.
OE = VIH, Cycle Time ≥ tKC min.
ISB
Standby Current Device Deselected,
VCC = Max.,
CLK Cycle Time ≥ tKC min.
IZZ
Power-Down
Mode Current
ZZ = VCCQ, CLK Running
All Inputs ≤ GND + 0.2V
or ≥ VCC – 0.2V
-166
Min. Max.
-133
Min. Max.
-117
Min. Max. Unit
—
—
400
—
—
—
215
—
—
—
205
—
—
—
195
205
mA
Com.
Ind.
—
—
100
—
—
—
70
—
—
—
60
—
—
—
50
60
mA
Com.
Ind.
—
—
5
—
—
—
5
—
—
—
5
—
—
—
5
10
mA
Note:
1. ADVANCE INFORMATION ONLY.
-5
Min. Max.
Symbol Parameter
Test Conditions
ICC
AC Operating
Supply Current
Device Selected,
Com.
All Inputs = VIL or VIH
Ind.
OE = VIH, Cycle Time ≥ tKC min.
ISB
Standby Current Device Deselected,
VCC = Max.,
CLK Cycle Time ≥ tKC min.
IZZ
Power-Down
Mode Current
6
ZZ = VCCQ, CLK Running
All Inputs ≤ GND + 0.2V
or ≥ VCC – 0.2V
-6
Min. Max.
-7
Min. Max.
-8
Min. Max. Unit
—
—
175
185
—
—
165
175
—
—
150
160
—
—
140
150
mA
Com.
Ind.
—
—
25
35
—
—
25
35
—
—
25
35
—
—
25
35
mA
Com.
Ind.
—
—
5
10
—
—
5
10
—
—
5
10
—
—
5
10
mA
Integrated Circuit Solution Inc.
SSE003-0B
IS61S6432
CAPACITANCE(1,2)
Symbol
Parameter
CIN
Input Capacitance
COUT
Input/Output Capacitance
Conditions
Max.
Unit
VIN = 0V
6
pF
VOUT = 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.3V.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
1.5 ns
1.5V
See Figures 1 and 2
AC TEST LOADS
317 Ω
3.3V
ZO = 50Ω
OUTPUT
Output
Buffer
30 pF
50Ω
1.5V
Figure 1
Integrated Circuit Solution Inc.
SSE003-0B
5 pF
Including
jig and
scope
351 Ω
Figure 2
7
IS61S6432
READ CYCLE SWITCHING CHARACTERISTICS (Over Operating Range)
Symbol
Parameter
tKC
Cycle Time
tKH
-200(1)
Min. Max.
-166
Min. Max.
-133
Min. Max.
-117
Min. Max
Unit
5
—
6
—
7.5
—
8.5
—
ns
Clock High Time
1.6
—
2.4
—
2.8
—
3
—
ns
tKL
Clock Low Time
1.6
—
2.4
—
2.8
—
3
—
ns
tKQ
Clock Access Time
—
4
—
5
—
5
—
5
ns
tKQX(2)
Clock High to Output Invalid
1
—
1.5
—
1.5
—
1.5
—
ns
(2,3)
Clock High to Output Low-Z
0
—
0
—
0
—
0
—
ns
(2,3)
tKQHZ
Clock High to Output High-Z
1
3.5
1.5
5
1.5
5
1.5
6
ns
tOEQ
Output Enable to Output Valid
—
3.5
—
5
—
5
—
5
ns
tKQLZ
tOEQX(2)
Output Disable to Output Invalid
0
—
0
—
0
—
0
—
ns
(2,3)
Output Enable to Output Low-Z
0
—
0
—
0
—
0
—
ns
(2,3)
tOEHZ
Output Disable to Output High-Z
—
3
—
3
—
3
—
4
ns
tAS
Address Setup Time
2
—
2.5
—
2.5
—
2.5
—
ns
tSS
Address Status Setup Time
2
—
2.5
—
2.5
—
2.5
—
ns
tWS
Write Setup Time
2
—
2.5
—
2.5
—
2.5
—
ns
tCES
Chip Enable Setup Time
2
—
2.5
—
2.5
—
2.5
—
ns
tAVS
Address Advance Setup Time
2
—
2.5
—
2.5
—
2.5
—
ns
tAH
Address Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
tSH
Address Status Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
tWH
Write Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
tCEH
Chip Enable Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
Address Advance Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
Configuration Setup
25
—
25
—
30
—
35
—
ns
tOELZ
tAVH
(4)
tCFG
Notes:
1. ADVANCE INFORMATION ONLY.
2. Guaranteed but not 100% tested. This parameter is periodically sampled.
3. Tested with load in Figure 2.
4. Configuration signal MODE is static and must not change during normal operation.
8
Integrated Circuit Solution Inc.
SSE003-0B
IS61S6432
READ CYCLE SWITCHING CHARACTERISTICS (Over Operating Range) (Continued)
-5
-6
-7
-8
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max
Unit
tKC
Cycle Time
10
—
12
—
13
—
15
—
ns
tKH
Clock High Time
3.5
—
4
—
6
—
6
—
ns
tKL
Clock Low Time
3.5
—
4
—
6
—
6
—
ns
tKQ
Clock Access Time
—
5
—
6
—
7
—
8
ns
tKQX(1)
Clock High to Output Invalid
1.5
—
1.5
—
2
—
2
—
ns
(1,2)
Clock High to Output Low-Z
0
—
0
—
0
—
0
—
ns
(1,2)
tKQHZ
Clock High to Output High-Z
1.5
6
1.5
6
2
6
2
6
ns
tOEQ
Output Enable to Output Valid
—
5
—
6
—
6
—
6
ns
tKQLZ
tOEQX(1)
Output Disable to Output Invalid
0
—
0
—
0
—
0
—
ns
(1,2)
Output Enable to Output Low-Z
0
—
0
—
0
—
0
—
ns
(1,2)
tOEHZ
Output Disable to Output High-Z
—
4
—
5
—
6
—
6
ns
tAS
Address Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
ns
tSS
Address Status Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
ns
tWS
Write Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
ns
tCES
Chip Enable Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
ns
tAVS
Address Advance Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
ns
tAH
Address Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
tSH
Address Status Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
tWH
Write Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
tCEH
Chip Enable Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
Address Advance Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
Configuration Setup
35
—
45
—
66.7
—
80
—
ns
tOELZ
tAVH
(3)
tCFG
Notes:
1. Guaranteed but not 100% tested. This parameter is periodically sampled.
2. Tested with load in Figure 2.
3. Configuration signal MODE is static and must not change during normal operation.
Integrated Circuit Solution Inc.
SSE003-0B
9
IS61S6432
READ CYCLE TIMING: PIPELINE
tKC
CLK
tSS
tSH
tKH
tKL
ADSP is blocked by CE1 inactive
ADSP
tSS
ADSC initiate read
tSH
ADSC
tAVH
tAVS
Suspend Burst
ADV
tAS
A15-A0
tAH
RD1
RD3
RD2
tWS
tWH
tWS
tWH
GW
BWE
BW4-BW1
tCES
tCEH
tCES
tCEH
tCES
tCEH
CE1 Masks ADSP
CE1
Unselected with CE2
CE2 and CE3 only sampled with ADSP or ADSC
CE2
CE3
tOEHZ
tOEQ
OE
DATAOUT
tKQX
tOEQX
tOELZ
High-Z
1a
2a
2b
2c
2d
tKQLZ
3a
tKQHZ
tKQ
DATAIN
High-Z
Pipelined Read
Single Read
10
Burst Read
Unselected
Integrated Circuit Solution Inc.
SSE003-0B
IS61S6432
WRITE CYCLE SWITCHING CHARACTERISTICS (Over Operating Range)
Symbol
Parameter
tKC
Cycle Time
tKH
-200(1)
Min. Max.
-166
Min. Max.
-133
-117
Min. Max. Min. Max.
Unit
5
—
6
—
7.5
—
8.5
—
ns
Clock High Time
1.6
—
2.4
—
2.8
—
3
—
ns
tKL
Clock Low Time
1.6
—
2.4
—
2.8
—
3
—
ns
tAS
Address Setup Time
2
—
2.5
—
2.5
—
2.5
—
ns
tSS
Address Status Setup Time
2
—
2.5
—
2.5
—
2.5
—
ns
tWS
Write Setup Time
2
—
2.5
—
2.5
—
2.5
—
ns
tDS
Data In Setup Time
2
—
2.5
—
2.5
—
2.5
—
ns
tCES
Chip Enable Setup Time
2
—
2.5
—
2.5
—
2.5
—
ns
tAVS
Address Advance Setup Time
2
—
2.5
—
2.5
—
2.5
—
ns
tAH
Address Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
tSH
Address Status Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
tDH
Data In Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
tWH
Write Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
tCEH
Chip Enable Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
tAVH
Address Advance Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
tCFG(2)
Configuration Setup
25
—
25
—
30
—
35
—
ns
Symbol
Parameter
tKC
Cycle Time
10
—
12
—
13
—
15
—
ns
tKH
Clock High Time
3.5
—
4
—
6
—
6
—
ns
tKL
Clock Low Time
3.5
—
4
—
6
—
6
—
ns
tAS
Address Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
ns
tSS
Address Status Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
ns
tWS
Write Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
ns
tDS
Data In Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
ns
tCES
Chip Enable Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
ns
tAVS
Address Advance Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
ns
tAH
Address Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
tSH
Address Status Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
tDH
Data In Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
tWH
Write Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
tCEH
Chip Enable Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
tAVH
Address Advance Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
Configuration Setup
35
—
45
—
52
—
60
—
ns
(2)
tCFG
-5
Min. Max.
-6
Min. Max.
-7
-8
Min. Max. Min. Max.
Unit
Note:
1. ADVANCE INFORMATION ONLY.
2. Configuration signal MODE is static and must not change during normal operation.
Integrated Circuit Solution Inc.
SSE003-0B
11
IS61S6432
WRITE CYCLE TIMING
tKC
CLK
tSS
tSH
tKH
tKL
ADSP is blocked by CE1 inactive
ADSP
ADSC initiate Write
ADSC
ADV must be inactive for ADSP Write tAVS
tAVH
ADV
tAS
A15-A0
tAH
WR1
WR2
tWS
tWH
tWS
tWH
tWS
tWH
WR3
GW
BWE
BW4-BW1
WR1
tCES
tCEH
tCES
tCEH
tCES
tCEH
tWS
tWH
WR2
WR3
CE1 Masks ADSP
CE1
Unselected with CE2
CE2 and CE3 only sampled with ADSP or ADSC
CE2
CE3
OE
DATAOUT
High-Z
tDS
DATAIN
High-Z
Single Write
12
tDH
1a
BW4-BW1 only are applied to first cycle of WR2
2a
2b
2c
2d
Burst Write
3a
Write
Unselected
Integrated Circuit Solution Inc.
SSE003-0B
IS61S6432
READ/WRITE CYCLE SWITCHING CHARACTERISTICS (Over Operating Range)
Symbol
Parameter
tKC
Cycle Time
tKH
tKL
tKQ
(2)
tKQX
(2,3)
-200(1)
Min. Max.
-166
Min. Max.
-133
-117
Min. Max. Min. Max.
Unit
5
—
6
—
7.5
—
8.5
—
ns
Clock High Time
1.6
—
2.4
—
2.8
—
3
—
ns
Clock Low Time
1.6
—
2.4
—
2.8
—
3
—
ns
Clock Access Time
—
4
—
5
—
5
—
5
ns
Clock High to Output Invalid
1
—
1.5
—
1.5
—
1.5
—
ns
—
0
—
0
—
0
—
ns
tKQLZ
Clock High to Output Low-Z
tKQHZ(2,3)
Clock High to Output High-Z
1
3.5
1.5
5
1.5
5
1.5
6
ns
tOEQ
Output Enable to Output Valid
—
3.5
—
5
—
5
—
5
ns
(2)
Output Disable to Output Invalid
0
—
0
—
0
—
0
—
ns
(2,3)
tOELZ
Output Enable to Output Low-Z
0
—
0
—
0
—
0
—
ns
tOEHZ(2,3)
Output Disable to Output High-Z
—
3
—
3
—
3
—
4
ns
tAS
Address Setup Time
2
—
2.5
—
2.5
—
2.5
—
ns
tSS
Address Status Setup Time
2
—
2.5
—
2.5
—
2.5
—
ns
tWS
Write Setup Time
2
—
2.5
—
2.5
—
2.5
—
ns
tCES
Chip Enable Setup Time
2
—
2.5
—
2.5
—
2.5
—
ns
tAH
Address Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
tSH
Address Status Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
tWH
Write Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
Chip Enable Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
Configuration Setup
25
—
25
—
30
—
35
—
ns
tOEQX
tCEH
(4)
tCFG
Notes:
1. ADVANCE INFORMATION ONLY.
2. Guaranteed but not 100% tested. This parameter is periodically sampled.
3. Tested with load in Figure 2.
4. Configuration signal MODE is static and must not change during normal operation.
Integrated Circuit Solution Inc.
SSE003-0B
13
IS61S6432
READ/WRITE CYCLE SWITCHING CHARACTERISTICS (Over Operating Range) (Continued)
-5
Min. Max.
-6
Min. Max.
-7
-8
Min. Max. Min. Max.
Symbol
Parameter
tKC
Cycle Time
10
—
12
—
13
—
15
—
ns
tKH
Clock High Time
3.5
—
4
—
6
—
6
—
ns
tKL
Clock Low Time
3.5
—
4
—
6
—
6
—
ns
tKQ
Clock Access Time
—
5
—
6
—
7
—
8
ns
tKQX(1)
Unit
Clock High to Output Invalid
1.5
—
1.5
—
2
—
2
—
ns
(1,2)
Clock High to Output Low-Z
0
—
0
—
0
—
0
—
ns
(1,2)
tKQHZ
Clock High to Output High-Z
1.5
6
1.5
6
2
6
2
6
ns
tOEQ
Output Enable to Output Valid
—
5
—
6
—
6
—
6
ns
tOEQX(1)
Output Disable to Output Invalid
0
—
0
—
0
—
0
—
ns
tOELZ(1,2)
Output Enable to Output Low-Z
0
—
0
—
0
—
0
—
ns
tOEHZ
Output Disable to Output High-Z
—
4
—
5
—
6
—
6
ns
tAS
Address Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
ns
tSS
Address Status Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
ns
tWS
Write Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
ns
tCES
Chip Enable Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
ns
tAH
Address Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
tSH
Address Status Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
tWH
Write Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
Chip Enable Hold Time
0.5
—
0.5
—
0.5
—
0.5
—
ns
Configuration Setup
35
—
45
—
52
—
60
—
ns
tKQLZ
(1,2)
tCEH
(3)
tCFG
Notes:
1. Guaranteed but not 100% tested. This parameter is periodically sampled.
2. Tested with load in Figure 2.
3. Configuration signal MODE is static and must not change during normal operation.
14
Integrated Circuit Solution Inc.
SSE003-0B
IS61S6432
READ/WRITE CYCLE TIMING: PIPELINE
tKC
CLK
tSS
tSH
tKH
tKL
ADSP is blocked by CE1 inactive
ADSP
tSS
tSH
ADSC
ADV
tAS
A15-A0
tAH
RD1
WR1
tWS
tWH
tWS
tWH
RD2
RD3
GW
BWE
tWS
tWH
WR1
BW4-BW1
tCES
tCEH
tCES
tCEH
tCES
tCEH
CE1 Masks ADSP
CE1
CE2 and CE3 only sampled with ADSP or ADSC
CE2
Unselected with CE3
CE3
tOEHZ
tOEQ
OE
DATAOUT
High-Z
2a
1a
tKQLZ
tKQ
DATAIN
tKQX
tOEQX
tOELZ
2c
2d
tKQHZ
tKQX
tKQHZ
High-Z
1a
tDS
Single Read
Integrated Circuit Solution Inc.
SSE003-0B
2b
tDH
Single Write
Burst Read
Unselected
15
IS61S6432
SNOOZE AND RECOVERY CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating
Range)
Symbol
Parameter
tKC
Cycle Time
tKH
tKL
-200(2)
Min. Max.
-166
Min. Max
-133
-117
Min. Max. Min. Max.
Unit
5
—
6
—
7.5
—
8.5
—
ns
Clock High Time
1.6
—
2.4
—
2.8
—
3
—
ns
Clock Low Time
1.6
—
2.4
—
2.8
—
3
—
ns
Clock Access Time
—
4
—
5
—
5
—
5
ns
Clock High to Output Invalid
1
—
1.5
—
1.5
—
1.5
—
ns
tKQLZ
Clock High to Output Low-Z
0
—
0
—
0
—
0
—
ns
tKQHZ(3,4)
Clock High to Output High-Z
1
3.5
1.5
5
1.5
5
1.5
6
ns
tOEQ
tKQ
(3)
tKQX
(3,4)
Output Enable to Output Valid
—
3.5
—
5
—
5
—
5
ns
(3)
Output Disable to Output Invalid
0
—
0
—
0
—
0
—
ns
(3,4)
tOELZ
Output Enable to Output Low-Z
0
—
0
—
0
—
0
—
ns
tOEHZ(3,4)
Output Disable to Output High-Z
—
3
—
3
—
3
—
4
ns
tAS
Address Setup Time
2
—
2.5
—
2.5
—
2.5
—
ns
tSS
Address Status Setup Time
2
—
2.5
—
2.5
—
2.5
—
ns
tCES
Chip Enable Setup Time
2
—
2.5
—
2.5
—
2.5
—
ns
tAH
Address Hold Time
2
—
2.5
—
2.5
—
2.5
—
ns
tSH
Address Status Hold Time
2
—
2.5
—
2.5
—
2.5
—
ns
Chip Enable Hold Time
2
—
2.5
—
2.5
—
2.5
—
ns
tZZS
ZZ Standby
—
8
2
—
2
—
2
—
cyc
tZZREC(6)
ZZ Recovery
8
—
2
—
2
—
2
—
cyc
tOEQX
tCEH
(5)
Notes:
1. Configuration signal MODE is static and must not change during normal operation.
2. ADVANCE INFORMATION ONLY.
3. Guaranteed but not 100% tested. This parameter is periodically sampled.
4. Tested with load in Figure 2.
5. The assertion of ZZ allows the SRAM to enter a lower power state than when deselected within the time specified. Data
retention is guaranteed when ZZ is asserted and clock remains active.
6. ADSC and ADSP must not be asserted for at least two cycles after leaving ZZ state.
16
Integrated Circuit Solution Inc.
SSE003-0B
IS61S6432
SNOOZE AND RECOVERY CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating
Range) (Continued)
-5
Min. Max.
-6
Min. Max.
-7
-8
Min. Max. Min. Max.
Symbol
Parameter
tKC
Cycle Time
10
—
12
—
13
—
15
—
ns
tKH
Clock High Time
3.5
—
4
—
6
—
6
—
ns
tKL
Clock Low Time
3.5
—
4
—
6
—
6
—
ns
Clock Access Time
—
5
—
6
—
7
—
8
ns
tKQ
(2)
tKQX
Unit
Clock High to Output Invalid
1.5
—
1.5
—
2
—
2
—
ns
(2,3)
Clock High to Output Low-Z
0
—
0
—
0
—
0
—
ns
(2,3)
tKQHZ
Clock High to Output High-Z
1.5
6
1.5
6
2
6
2
6
ns
tOEQ
Output Enable to Output Valid
—
5
—
6
—
6
—
6
ns
tKQLZ
tOEQX(2)
Output Disable to Output Invalid
0
—
0
—
0
—
0
—
ns
(2,3)
Output Enable to Output Low-Z
0
—
0
—
0
—
0
—
ns
(2,3)
tOEHZ
Output Disable to Output High-Z
—
4
—
5
—
6
—
6
ns
tAS
Address Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
ns
tSS
Address Status Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
ns
tCES
Chip Enable Setup Time
2.5
—
2.5
—
2.5
—
2.5
—
ns
tAH
Address Hold Time
2.5
—
2.5
—
2.5
—
2.5
—
ns
tSH
Address Status Hold Time
2.5
—
2.5
—
2.5
—
2.5
—
ns
Chip Enable Hold Time
2.5
—
2.5
—
2.5
—
2.5
—
ns
ZZ Standby
2
—
2
—
2
—
2
—
cyc
ZZ Recovery
2
—
2
—
2
—
2
—
cyc
tOELZ
tCEH
(4)
tZZS
(5)
tZZREC
Notes:
1. Configuration signal MODE is static and must not change during normal operation.
2. Guaranteed but not 100% tested. This parameter is periodically sampled.
3. Tested with load in Figure 2.
4. The assertion of ZZ allows the SRAM to enter a lower power state than when deselected within the time specified. Data
retention is guaranteed when ZZ is asserted and clock remains active.
5. ADSC and ADSP must not be asserted for at least two cycles after leaving ZZ state.
Integrated Circuit Solution Inc.
SSE003-0B
17
IS61S6432
SNOOZE AND RECOVERY CYCLE TIMING
tKC
CLK
tSS
tSH
tAS
tAH
tKH
tKL
ADSP
ADSC
ADV
A15-A0
RD1
RD2
GW
BWE
BW4-BW1
tCES
tCEH
tCES
tCEH
tCES
tCEH
CE1
CE2
CE3
tOEHZ
tOEQ
OE
tOEQX
tOELZ
DATAOUT
High-Z
1a
tKQLZ
tKQ
DATAIN
tKQX
tKQHZ
High-Z
tZZS
tZZREC
ZZ
Single Read
18
Snooze with Data Retention
Read
Integrated Circuit Solution Inc.
SSE003-0B
IS61S6432
ORDERING INFORMATION
Commercial Range: 0°C to +70°C
Frequency (MHz) Order Part Number
Package
200
IS61S6432-200TQ 14*20*1.4mm LQFP
IS61S6432-200PQ 14*20*2.7mm PQFP
166
IS61S6432-166TQ 14*20*1.4mm LQFP
IS61S6432-166PQ 14*20*2.7mm PQFP
133
IS61S6432-133TQ 14*20*1.4mm LQFP
IS61S6432-133PQ 14*20*2.7mm PQFP
117
IS61S6432-117TQ 14*20*1.4mm LQFP
IS61S6432-117PQ 14*20*2.7mm PQFP
100
IS61S6432-5TQ
IS61S6432-5PQ
14*20*1.4mm LQFP
14*20*2.7mm PQFP
83
IS61S6432-6TQ
IS61S6432-6PQ
14*20*1.4mm LQFP
14*20*2.7mm PQFP
75
IS61S6432-7TQ
IS61S6432-7PQ
14*20*1.4mm LQFP
14*20*2.7mm PQFP
66
IS61S6432-8TQ
IS61S6432-8PQ
14*20*1.4mm LQFP
14*20*2.7mm PQFP
ORDERING INFORMATION
Industrial Range: –40°C to +85°C
Frequency (MHz)
117
Package
IS61S6432-117TQI 14*20*1.4mm LQFP
IS61S6432-117PQI 14*20*2.7mm PQFP
100
IS61S6432-5TQI
IS61S6432-5PQI
14*20*1.4mm LQFP
14*20*2.7mm PQFP
83
IS61S6432-6TQI
IS61S6432-6PQI
14*20*1.4mm LQFP
14*20*2.7mm PQFP
75
IS61S6432-7TQI
IS61S6432-7PQI
14*20*1.4mm LQFP
14*20*2.7mm PQFP
66
IS61S6432-8TQI
IS61S6432-8PQI
14*20*1.4mm LQFP
14*20*2.7mm PQFP
Integrated Circuit Solution Inc.
SSE003-0B
Order Part Number
19
IS61S6432
Integrated Circuit Solution Inc.
HEADQUARTER:
NO.2, TECHNOLOGY RD. V, SCIENCE-BASED INDUSTRIAL PARK,
HSIN-CHU, TAIWAN, R.O.C.
TEL: 886-3-5780333
Fax: 886-3-5783000
BRANCH OFFICE:
7F, NO. 106, SEC. 1, HSIN-TAI 5TH ROAD,
HSICHIH TAIPEI COUNTY, TAIWAN, R.O.C.
TEL: 886-2-26962140
FAX: 886-2-26962252
http://www.icsi.com.tw
20
Integrated Circuit Solution Inc.
SSE003-0B