ISL8499 ® Data Sheet January 27, 2005 Ultra Low ON-Resistance, +1.65V to +4.5V, Single Supply, Quad SPDT (Dual DPDT) Analog Switch The Intersil ISL8499 device is a low ON-resistance, low voltage, bidirectional, Quad SPDT (Dual DPDT) analog switch designed to operate from a single +1.65V to +4.5V supply. Targeted applications include battery powered equipment that benefit from low RON (0.24Ω) and fast switching speeds (tON = 15ns, tOFF = 13ns). The digital logic input is 1.8V logic-compatible when using a single +3V supply. With a supply voltage of 4.2V and logic high voltage of 2.85V at both logic inputs, the part draws only 10µA max of ICC current. Cell phones, for example, often face ASIC functionality limitations. The number of analog input or GPIO pins may be limited and digital geometries are not well suited to analog switch performance. This part may be used to “mux-in” additional functionality while reducing ASIC design risk. The ISL8499 is offered in small form factor packages, alleviating board space limitations. The ISL8499 consists of four SPDT switches. It is configured as a dual double-pole/double-throw (DPDT) device with two logic control inputs that control two SPDT switches each. The configuration can be used as a dual differential 2-to-1 multiplexer/demultiplexer. The ISL8499 is pin compatible with the STG3699 and DG2799. TABLE 1. FEATURES AT A GLANCE FN6111.0 Features • Drop in Replacement for the STG3699 and DG2799 • ON Resistance (RON) - V+ = +4.3V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.24Ω - V+ = +3.0V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.26Ω - V+ = +1.8V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.45Ω • RON Matching between Channels . . . . . . . . . . . . . . . . 0.04Ω • RON Flatness Across Signal Range . . . . . . . . . . . . . . . 0.05Ω • Single Supply Operation . . . . . . . . . . . . . . . +1.65V to +4.5V • Low Power Consumption (PD) . . . . . . . . . . . . . . . . . <0.2µW • Fast Switching Action (V+ = +4.3V) - tON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15ns - tOFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13ns • Guaranteed Break-Before-Make • 1.8V Logic Compatible (+3V supply) • Low ICC Current when VinH is not at the V+ Rail • Available in 16 lead 3x3 QFN and 16 lead TSSOP • ESD HBM Rating - COM Pins. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9kV - All Other Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4kV • Pb-Free Available as an Option (RoHS Compliant) (see Ordering Info) Applications ISL8499 Number of Switches 4 SW Quad SPDT (Dual DPDT) 4.3V RON 0.24Ω 4.3V tON/tOFF 15ns/13ns 3.0V RON 0.26Ω 3.0V tON/tOFF 21ns/17ns 1.8V RON 0.45Ω 1.8V tON/tOFF 51ns/43ns Packages 16 Ld 3x3 QFN, 16 Ld TSSOP • Battery Powered, Handheld, and Portable Equipment - Cellular/Mobile Phones - Pagers - Laptops, Notebooks, Palmtops • Portable Test and Measurement • Medical Equipment • Audio and Video Switching Related Literature • Technical Brief TB363 “Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices (SMDs)” • Application Note AN557 “Recommended Test Procedures for Analog Switches” 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2005. All Rights Reserved All other trademarks mentioned are the property of their respective owners. ISL8499 Pinouts Ordering Information (Note 1) ISL8499 (TSSOP) TOP VIEW PART NO. (BRAND) 16 V+ NO1 1 15 NC4 COM1 2 14 COM4 NC1 3 IN1-2 4 13 NO4 NO2 5 12 IN3-4 11 NC3 COM2 6 NC2 7 10 COM3 GND 8 9 NO3 COM1 NO1 V+ NC4 ISL8499 (3X3 QFN) TOP VIEW 16 15 14 13 2 11 NO4 NO2 3 10 IN3-4 COM2 4 9 5 6 7 8 COM3 IN1-2 NO3 12 COM4 GND 1 NC2 NC1 TEMP. RANGE (°C) PACKAGE PKG. DWG. # ISL8499IR (8499IR) -40 to 85 16 Ld 3x3 QFN L16.3x3 ISL8499IR-T (8499IR) -40 to 85 16 Ld 3x3 QFN Tape and Reel L16.3x3 ISL8499IV (8499IV) -40 to 85 16 Ld TSSOP M16.173 ISL8499IV-T (8499IV) -40 to 85 16 Ld TSSOP Tape and Reel M16.173 ISL8499IRZ (8499IR) (See Note) -40 to 85 16 Ld 3x3 QFN (Pb-free) L16.3x3 ISL8499IRZ-T (8499IR) (See Note) -40 to 85 16 Ld 3x3 QFN Tape and Reel (Pb-free) L16.3x3 ISL8499IVZ (8499IV) (See Note) -40 to 85 16 Ld TSSOP (Pb-free) M16.173 ISL8499IVZ-T (8499IV) (See Note) -40 to 85 16 Ld TSSOP Tape and Reel (Pb-free) M16.173 NOTE: Intersil Pb-free products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. NC3 NOTE: 1. Switches Shown for Logic “0” Input. Truth Table LOGIC NC SW NO SW 0 ON OFF 1 OFF ON NOTE: Logic “0” ≤0.5V. Logic “1” ≥1.4V with a 3V supply. Pin Descriptions PIN V+ FUNCTION System Power Supply Input (+1.65V to +4.5V) GND Ground Connection IN Digital Control Input COM Analog Switch Common Pin NO Analog Switch Normally Open Pin NC Analog Switch Normally Closed Pin 2 FN6111.0 January 27, 2005 ISL8499 Absolute Maximum Ratings Thermal Information V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to 4.7V Input Voltages NO, NC, IN (Note 2) . . . . . . . . . . . . . . . . . . . -0.3 to ((V+) + 0.3V) Output Voltages COM (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to ((V+) + 0.3V) Continuous Current NO, NC, or COM . . . . . . . . . . . . . . . . . ±300mA Peak Current NO, NC, or COM (Pulsed 1ms, 10% Duty Cycle, Max) . . . . . . . . . . . . . . . . ±500mA ESD Rating: HBM COMX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>9kV HBM NOX, NCX, INX, V+, GND . . . . . . . . . . . . . . . . . . . . . . .>4kV MM COMX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>500V MM NOX, NCX, INX, V+, GND . . . . . . . . . . . . . . . . . . . . . . .>300V CDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>1kV Thermal Resistance (Typical, Note 3) θJA (°C/W) QFN Package (Note 4). . . . . . . . . . . . . . . . . . . . . . . 70 TSSOP Package (Note 3) . . . . . . . . . . . . . . . . . . . . 150 Maximum Junction Temperature (Plastic Package) . . . . . . . 150°C Maximum Storage Temperature Range. . . . . . . . . . . . . -65°C to 150°C Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300°C (Lead Tips Only) Operating Conditions Temperature Range ISL8499IX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40°C to 85°C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 2. Signals on NC, NO, IN, or COM exceeding V+ or GND are clamped by internal diodes. Limit forward diode current to maximum current ratings. 3. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details. 4. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech Brief TB379. Electrical Specifications - 4.3V Supply PARAMETER Test Conditions: V+ = +3.9V to +4.5V, GND = 0V, VINH = 1.6V, VINL = 0.5V (Notes 4, 6), Unless Otherwise Specified TEST CONDITIONS TEMP (°C) (NOTE 5) MIN TYP (NOTE 5) MAX UNITS Full 0 - V+ V 25 - 0.25 - Ω ANALOG SWITCH CHARACTERISTICS Analog Signal Range, VANALOG ON Resistance, RON V+ = 3.9V, ICOM = 100mA, VNO or VNC = 0V to V+, (See Figure 5) RON Matching Between Channels, ∆RON V+ = 3.9V, ICOM = 100mA, VNO or VNC = Voltage at max RON,(Note 9) RON Flatness, RFLAT(ON) V+ = 3.9V, ICOM = 100mA, VNO or VNC = 0V to V+, (Note 7) NO or NC OFF Leakage Current, INO(OFF) or INC(OFF) V+ = 4.5V, VCOM = 0.3V, 3V, VNO or VNC = 3V, 0.3V COM ON Leakage Current, ICOM(ON) V+ = 4.5V, VCOM = 0.3V, 3V, or VNO or VNC = 0.3V, 3V, or Floating Full - 0.28 - Ω 25 - 0.04 - Ω Full - 0.05 - Ω 25 - 0.05 - Ω Full - 0.05 - Ω 25 -50 - 50 nA Full -150 - 150 nA 25 -50 - 50 nA Full -150 - 150 nA 25 - 15 25 ns Full - - 30 ns 25 - 13 23 ns Full - - 28 ns DYNAMIC CHARACTERISTICS Turn-ON Time, tON V+ = 3.9V, VNO or VNC = 3.0V, RL = 50Ω, CL = 35pF, (See Figure 1, Note 8) Turn-OFF Time, tOFF V+ = 3.9V, VNO or VNC = 3.0V, RL = 50Ω, CL = 35pF, (See Figure 1, Note 8) Break-Before-Make Time Delay, tD V+ = 4.5V, VNO or VNC = 3.0V, RL = 50Ω, CL = 35pF, (See Figure 3, Note 8) Full 2 3 - ns Charge Injection, Q CL = 1.0nF, VG = 0V, RG = 0Ω, (See Figure 2) 25 - -120 - pC OFF Isolation RL = 50Ω, CL = 5pF, f = 100kHz, VCOM = 1VRMS, (See Figure 4) 25 - 68 - dB Crosstalk (Channel-to-Channel) RL = 50Ω, CL = 5pF, f = 100kHz, VCOM = 1VRMS, (See Figure 6) 25 - -98 - dB 3 FN6111.0 January 27, 2005 ISL8499 Electrical Specifications - 4.3V Supply Test Conditions: V+ = +3.9V to +4.5V, GND = 0V, VINH = 1.6V, VINL = 0.5V (Notes 4, 6), Unless Otherwise Specified (Continued) TEMP (°C) (NOTE 5) MIN TYP 25 - 0.003 - % NO or NC OFF Capacitance, COFF f = 1MHz, VNO or VNC = VCOM = 0V, (See Figure 7) 25 - 106 - pF COM ON Capacitance, CCOM(ON) 25 - 212 - pF Full 1.65 - 4.5 V 25 - - 0.06 µA Full - - 1.4 µA 25 - - 10 µA Input Voltage Low, VINL Full - - 0.5 V Input Voltage High, VINH Full 1.6 - - V Full -0.5 - 0.5 µA PARAMETER TEST CONDITIONS Total Harmonic Distortion f = 20Hz to 20kHz, VCOM = 2VP-P, RL = 600Ω f = 1MHz, VNO or VNC = VCOM = 0V, (See Figure 7) (NOTE 5) MAX UNITS POWER SUPPLY CHARACTERISTICS Power Supply Range Positive Supply Current, I+ V+ = +4.5V, VIN = 0V or V+ Positive Supply Current, I+ V+ = +4.2V, VIN = 2.85V DIGITAL INPUT CHARACTERISTICS Input Current, IINH, IINL V+ = 4.5V, VIN = 0V or V+, (Note 8) NOTES: 5. VIN = input voltage to perform proper function. 6. The algebraic convention, whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. 7. Parts are 100% tested at +25°C. Limits across the full temperature range are guaranteed by design and correlation. 8. Flatness is defined as the difference between maximum and minimum value of on-resistance over the specified analog signal range. 9. Guaranteed but not tested. 10. RON matching between channels is calculated by subtracting the channel with the highest max Ron value from the channel with lowest max RON value, between NC1 and NC2, NC3 and NC4 or between NO1 and NO2, NO3 and NO4. Electrical Specifications - 3V Supply PARAMETER Test Conditions: V+ = +2.7V to +3.3V, GND = 0V, VINH = 1.4V, VINL = 0.5V (Notes 4, 6), Unless Otherwise Specified TEST CONDITIONS TEMP (°C) (NOTE 5) MIN TYP (NOTE 5) MAX UNITS Full 0 - V+ V 25 - 0.3 0.45 Ω Full - - 0.6 Ω 25 - 0.04 0.08 Ω Full - - 0.09 Ω 25 - 0.06 0.15 Ω ANALOG SWITCH CHARACTERISTICS Analog Signal Range, VANALOG V+ = 2.7V, ICOM = 100mA, VNO or VNC = 0V to V+, (See Figure 5) ON Resistance, RON RON Matching Between Channels, ∆RON V+ = 2.7V, ICOM = 100mA, VNO or VNC = Voltage at max RON, (Note 9) RON Flatness, RFLAT(ON) V+ = 2.7V, ICOM = 100mA, VNO or VNC = 0V to V+, (Note 7) NO or NC OFF Leakage Current, INO(OFF) or INC(OFF) V+ = 3.3V, VCOM = 0.3V, 3V, VNO or VNC = 3V, 0.3V COM ON Leakage Current, ICOM(ON) V+ = 3.3V, VCOM = 0.3V, 3V, or VNO or VNC = 0.3V, 3V, or Floating Full - - 0.15 Ω 25 - 1.2 - nA Full - 13 - nA 25 - 1 - nA Full - 35 - nA 25 - 21 30 ns Full - - 35 ns 25 - 17 27 ns Full - - 32 ns DYNAMIC CHARACTERISTICS V+ = 2.7V, VNO or VNC = 1.5V, RL = 50Ω, CL = 35pF, (See Figure 1, Note 8) Turn-ON Time, tON V+ = 2.7V, VNO or VNC = 1.5V, RL = 50Ω, CL = 35pF, (See Figure 1, Note 8) Turn-OFF Time, tOFF 4 FN6111.0 January 27, 2005 ISL8499 Electrical Specifications - 3V Supply Test Conditions: V+ = +2.7V to +3.3V, GND = 0V, VINH = 1.4V, VINL = 0.5V (Notes 4, 6), Unless Otherwise Specified (Continued) TEMP (°C) (NOTE 5) MIN TYP V+ = 3.3V, VNO or VNC = 1.5V, RL = 50Ω, CL = 35pF, (See Figure 3, Note 8) Full 2 3 - ns Charge Injection, Q CL = 1.0nF, VG = 0V, RG = 0Ω, (See Figure 2) 25 - -82 - pC OFF Isolation RL = 50Ω, CL = 5pF, f = 100kHz, VCOM = 1VRMS, (See Figure 4) 25 - 68 - dB Crosstalk (Channel-to-Channel) RL = 50Ω, CL = 5pF, f = 100kHz, VCOM = 1VRMS, (See Figure 6) 25 - -98 - dB Total Harmonic Distortion f = 20Hz to 20kHz, VCOM = 2VP-P, RL = 600Ω 25 - 0.003 - % NO or NC OFF Capacitance, COFF f = 1MHz, VNO or VNC = VCOM = 0V, (See Figure 7) 25 - 106 - pF COM ON Capacitance, CCOM(ON) 25 - 212 - pF PARAMETER TEST CONDITIONS Break-Before-Make Time Delay, tD f = 1MHz, VNO or VNC = VCOM = 0V, (See Figure 7) (NOTE 5) MAX UNITS POWER SUPPLY CHARACTERISTICS 25 - 0.025 - µA Full - 0.715 - µA Input Voltage Low, VINL Full - - 0.5 V Input Voltage High, VINH Full 1.4 - - V Full -0.5 - 0.5 µA Positive Supply Current, I+ V+ = 3.6V, VIN = 0V or V+ DIGITAL INPUT CHARACTERISTICS Input Current, IINH, IINL V+ = 3.6V, VIN = 0V or V+ (Note 8) Electrical Specifications - 1.8V Supply PARAMETER Test Conditions: V+ = +1.65V to +2V, GND = 0V, VINH = 1.0V, VINL = 0.4V (Notes 4, 6), Unless Otherwise Specified TEST CONDITIONS TEMP (°C) (NOTE 5) MIN TYP (NOTE 5) MAX UNITS Full 0 - V+ V 25 - 0.45 0.8 Ω Full - - 0.85 Ω ANALOG SWITCH CHARACTERISTICS Analog Signal Range, VANALOG ON Resistance, RON V+ = 1.8V, ICOM = 100mA, VNO or VNC = 0V to V+, (See Figure 5) DYNAMIC CHARACTERISTICS Turn-ON Time, tON V+ = 1.65V, VNO or VNC = 1.0V, RL = 50Ω, CL = 35pF, (See Figure 1, Note 8) 25 - 51 65 ns Full - - 70 ns 25 - 43 58 ns Turn-OFF Time, tOFF V+ = 1.65V, VNO or VNC = 1.0V, RL = 50Ω, CL = 35pF, (See Figure 1, Note 8) Full - - 65 ns Break-Before-Make Time Delay, tD V+ = 2.0V, VNO or VNC = 1.0V, RL = 50Ω, CL = 35pF, (See Figure 3, Note 8) Full 3 8 - ns Charge Injection, Q CL = 1.0nF, VG = 0V, RG = 0Ω, See Figure 2 25 - -44 - pC OFF Isolation RL = 50Ω, CL = 5pF, f = 100kHz, VCOM = 1VRMS, (See Figure 4) 25 - 68 - dB Crosstalk (Channel-to-Channel) RL = 50Ω, CL = 5pF, f = 100kHz, VCOM = 1VRMS, (See Figure 6) 25 - -98 - dB NO or NC OFF Capacitance, COFF f = 1MHz, VNO or VNC = VCOM = 0V, (See Figure 7) 25 - 106 - pF f = 1MHz, VNO or VNC = VCOM = 0V, (See Figure 7) 25 - 212 - pF Full - - 0.4 V Full 1.0 - - V Full -0.5 - 0.5 µA COM ON Capacitance, CCOM(ON) DIGITAL INPUT CHARACTERISTICS Input Voltage Low, VINL Input Voltage High, VINH Input Current, IINH, IINL V+ = 2.0V, VIN = 0V or V+ (Note 8) 5 FN6111.0 January 27, 2005 ISL8499 Test Circuits and Waveforms V+ LOGIC INPUT V+ tr < 5ns tf < 5ns 50% 0V tOFF SWITCH INPUT SWITCH INPUT VNO VOUT VOUT NO or NC COM IN 90% SWITCH OUTPUT C 90% LOGIC INPUT 0V CL 35pF RL 50Ω GND tON Logic input waveform is inverted for switches that have the opposite logic sense. Repeat test for all switches. CL includes fixture and stray capacitance. RL V OUT = V (NO or NC) -----------------------------R L + R ( ON ) FIGURE 1A. MEASUREMENT POINTS FIGURE 1B. TEST CIRCUIT FIGURE 1. SWITCHING TIMES V+ SWITCH OUTPUT VOUT RG ∆VOUT C VOUT COM NO or NC V+ LOGIC INPUT VG ON ON GND IN CL OFF 0V LOGIC INPUT Q = ∆VOUT x CL FIGURE 2B. TEST CIRCUIT FIGURE 2A. MEASUREMENT POINTS FIGURE 2. CHARGE INJECTION V+ V+ LOGIC INPUT VNX C NO RL 50Ω IN SWITCH OUTPUT VOUT VOUT COM NC 0V 90% LOGIC INPUT CL 35pF GND 0V tD CL includes fixture and stray capacitance. FIGURE 3A. MEASUREMENT POINTS FIGURE 3B. TEST CIRCUIT FIGURE 3. BREAK-BEFORE-MAKE TIME 6 FN6111.0 January 27, 2005 ISL8499 Test Circuits and Waveforms (Continued) V+ V+ C C RON = V1/100mA SIGNAL GENERATOR NO or NC NO or NC VNX IN 0V or V+ 100mA 0V or V+ COM COM ANALYZER IN V1 GND GND RL FIGURE 4. OFF ISOLATION TEST CIRCUIT FIGURE 5. RON TEST CIRCUIT V+ C V+ C SIGNAL GENERATOR NO or NC COM 50Ω NO or NC IN1 IN 0V or V+ NC or NO COM ANALYZER 0V or V+ IMPEDANCE ANALYZER GND COM N.C. GND RL FIGURE 6. CROSSTALK TEST CIRCUIT Detailed Description The ISL8499 is a bidirectional, quad single pole/double throw (SPDT) analog switch that offers precise switching capability from a single 1.65V to 4.5V supply with low onresistance (0.24Ω) and high speed operation (tON = 15ns, tOFF = 13ns). The device is especially well suited for portable battery powered equipment due to its low operating supply voltage (1.65V), low power consumption (2.7µW max), low leakage currents (150nA max), and the tiny QFN and TSSOP packages. The ultra low on-resistance and Ron flatness provide very low insertion loss and distortion to applications that require signal reproduction. Supply Sequencing and Overvoltage Protection With any CMOS device, proper power supply sequencing is required to protect the device from excessive input currents which might permanently damage the IC. All I/O pins contain ESD protection diodes from the pin to V+ and to GND (see 7 FIGURE 7. CAPACITANCE TEST CIRCUIT Figure 8). To prevent forward biasing these diodes, V+ must be applied before any input signals, and the input signal voltages must remain between V+ and GND. If these conditions cannot be guaranteed, then one of the following two protection methods should be employed. Logic inputs can easily be protected by adding a 1kΩ resistor in series with the input (see Figure 8). The resistor limits the input current below the threshold that produces permanent damage, and the sub-microamp input current produces an insignificant voltage drop during normal operation. This method is not acceptable for the signal path inputs. Adding a series resistor to the switch input defeats the purpose of using a low RON switch, so two small signal diodes can be added in series with the supply pins to provide overvoltage protection for all pins (see Figure 8). These additional diodes limit the analog signal from 1V below V+ to FN6111.0 January 27, 2005 ISL8499 1V above GND. The low leakage current performance is unaffected by this approach, but the switch signal range is reduced and the resistance may increase, especially at low supply voltages. OPTIONAL PROTECTION DIODE V+ OPTIONAL PROTECTION RESISTOR INX VNO or NC VCOM GND OPTIONAL PROTECTION DIODE FIGURE 8. OVERVOLTAGE PROTECTION Power-Supply Considerations The ISL8499 construction is typical of most single supply CMOS analog switches, in that they have two supply pins: V+ and GND. V+ and GND drive the internal CMOS switches and set their analog voltage limits. Unlike switches with a 4V maximum supply voltage, the ISL8499 4.7V maximum supply voltage provides plenty of room for the 10% tolerance of 4.3V supplies, as well as room for overshoot and noise spikes. The minimum recommended supply voltage is 1.65V but will operate with a supply voltage below 1.5V. It is important to note that the input signal range, switching times, and onresistance degrade at lower supply voltages. Refer to the electrical specification tables and Typical Performance curves for details. V+ and GND also power the internal logic and level shiftiers. The level shiftiers convert the input logic levels to switched V+ and GND signals to drive the analog switch gate terminals. This family of switches cannot be operated with bipolar supplies, because the input switching point becomes negative in this configuration. designed to minimize the supply current whenever the digital input voltage is not driven to the supply rails (0V to V+). For example driving the device with 2.85V logic (0V to 2.85V) while operating with a 4.2V supply the device draws only 6µA of current (see Figure 21 for VIN = 2.85V). High-Frequency Performance In 50Ω systems, the signal response is reasonably flat even past 30MHz with a -3dB bandwidth of 104MHz (see Figure 17). The frequency response is very consistent over a wide V+ range, and for varying analog signal levels. An OFF switch acts like a capacitor and passes higher frequencies with less attenuation, resulting in signal feedthrough from a switch’s input to its output. Off Isolation is the resistance to this feedthrough, while Crosstalk indicates the amount of feedthrough from one switch to another. Figure 18 details the high Off Isolation and Crosstalk rejection provided by this part. At 100kHz, Off Isolation is about 68dB in 50Ω systems, decreasing approximately 20dB per decade as frequency increases. Higher load impedances decrease Off Isolation and Crosstalk rejection due to the voltage divider action of the switch OFF impedance and the load impedance. Leakage Considerations Reverse ESD protection diodes are internally connected between each analog-signal pin and both V+ and GND. One of these diodes conducts if any analog signal exceeds V+ or GND. Virtually all the analog leakage current comes from the ESD diodes to V+ or GND. Although the ESD diodes on a given signal pin are identical and therefore fairly well balanced, they are reverse biased differently. Each is biased by either V+ or GND and the analog signal. This means their leakages will vary as the signal varies. The difference in the two diode leakages to the V+ and GND pins constitutes the analogsignal-path leakage current. All analog leakage current flows between each pin and one of the supply terminals, not to the other switch terminal. This is why both sides of a given switch can show leakage currents of the same or opposite polarity. There is no connection between the analog signal paths and V+ or GND. Logic-Level Thresholds This switch family is 1.8V CMOS compatible (0.5V and 1.4V) over a supply range of 2.7V to 4.5V (see Figure 14). At 2.7V the VIL level is about 0.52V. This is still above the 1.8V CMOS guaranteed low output maximum level of 0.5V, but noise margin is reduced. The digital input stages draw supply current whenever the digital input voltage is not at one of the supply rails. Driving the digital input signals from GND to V+ with a fast transition time minimizes power dissipation. The ISL8499 has been 8 FN6111.0 January 27, 2005 ISL8499 Typical Performance Curves TA = 25°C, Unless Otherwise Specified 0.45 0.28 V+ = 4.3V ICOM = 100mA ICOM = 100mA 0.26 0.4 V+ = 1.8V 0.24 RON (Ω) RON (Ω) 0.35 0.3 85°C 0.22 0.2 V+ = 2.7V 25°C 0.25 0.18 V+ = 3V 0.2 V+ = 4.3V 0.16 V+ = 3.6V 0.15 0 1 2 -40°C 3 4 0.14 5 0 1 2 3 4 5 VCOM (V) VCOM (V) FIGURE 10. ON RESISTANCE vs SWITCH VOLTAGE FIGURE 9. ON RESISTANCE vs SUPPLY VOLTAGE vs SWITCH VOLTAGE 0.5 0.35 V+ = 1.8V ICOM = 100mA V+ = 2.7V ICOM = 100mA 0.45 85°C 0.3 0.4 RON (Ω) RON (Ω) 85°C 0.25 25°C 0.35 0.3 0.2 25°C -40°C -40°C 0.25 0.15 0.2 0 0.5 1 1.5 2 2.5 VCOM (V) FIGURE 11. ON RESISTANCE vs SWITCH VOLTAGE 9 3 0 0.5 1 1.5 2 VCOM (V) FIGURE 12. ON RESISTANCE vs SWITCH VOLTAGE FN6111.0 January 27, 2005 ISL8499 Typical Performance Curves TA = 25°C, Unless Otherwise Specified (Continued) 1.1 50 1 0.9 0 VINH VINH AND VINL (V) V+ = 1.8V Q (pC) V+ = 3V -50 -100 0.8 0.7 VINL 0.6 0.5 0.4 -150 0 0.5 1 1.5 2 2.5 0.3 3 1.5 2 2.5 VCOM (V) 3.5 4 4.5 FIGURE 14. DIGITAL SWITCHING POINT vs SUPPLY VOLTAGE 200 200 150 150 tOFF (ns) tON (ns) FIGURE 13. CHARGE INJECTION vs SWITCH VOLTAGE 100 3 V+ (V) 85°C 25°C 100 85°C 25°C -40°C 50 0 50 1 1.5 2 2.5 3 V+ (V) 3.5 4 0 4.5 1 1.5 2 2.5 3 3.5 4 FIGURE 16. TURN - OFF TIME vs SUPPLY VOLTAGE 10 -10 V+ = 3V V+ = 3V 0 4.5 V+ (V) FIGURE 15. TURN - ON TIME vs SUPPLY VOLTAGE -20 20 -30 30 -40 40 -50 50 0 PHASE 20 40 60 80 RL = 50Ω VIN = 0.2VP-P to 2VP-P 1 10 100 100 FREQUENCY (MHz) FIGURE 17. FREQUENCY RESPONSE 10 600 CROSSTALK (dB) -20 60 -60 ISOLATION 70 -70 80 -80 CROSSTALK -90 90 100 -100 -110 1k OFF ISOLATION (dB) GAIN PHASE (DEGREES) NORMALIZED GAIN (dB) -40°C 10k 100k 1M 10M FREQUENCY (Hz) 110 100M 500M FIGURE 18. CROSSTALK AND OFF ISOLATION FN6111.0 January 27, 2005 ISL8499 Typical Performance Curves TA = 25°C, Unless Otherwise Specified (Continued) 100 50 V+ = 4.5V V+ = 4.5V VCOM = 0.3V 50 0 0 iOFF (nA) iON (nA) 25°C 25°C -50 -50 85°C -100 85°C -100 -150 0 1 2 3 VCOM/NX (V) 4 5 1 2 3 4 5 VNX (V) FIGURE 19. ON LEAKAGE vs SWITCH VOLTAGE FIGURE 20. OFF LEAKAGE vs SWITCH VOLTAGE 200 V+ = 4.2V Sweeping Both Logic Inputs 150 iON (µA) 0 Die Characteristics SUBSTRATE POTENTIAL (POWERED UP): GND (QFN Paddle Connection: To Ground or Float) TRANSISTOR COUNT: 228 100 PROCESS: Si Gate CMOS 50 0 1 2 3 4 5 VIN1-4 (V) FIGURE 21. SUPPLY CURRENT vs VLOGIC 11 FN6111.0 January 27, 2005 ISL8499 Thin Shrink Small Outline Plastic Packages (TSSOP) M16.173 N 16 LEAD THIN SHRINK SMALL OUTLINE PLASTIC PACKAGE INDEX AREA E 0.25(0.010) M 2 INCHES E1 GAUGE PLANE -B1 B M L 0.05(0.002) -A- SYMBOL MIN MAX MIN MAX NOTES A - 0.043 - 1.10 - A1 3 A D -C- e α c 0.10(0.004) C A M 0.05 0.15 - A2 0.033 0.037 0.85 0.95 - b 0.0075 0.012 0.19 0.30 9 c 0.0035 0.008 0.09 0.20 - B S 0.002 D 0.193 0.201 4.90 5.10 3 0.169 0.177 4.30 4.50 4 0.026 BSC E 0.246 L 0.020 N α NOTES: 1. These package dimensions are within allowable dimensions of JEDEC MO-153-AB, Issue E. 0.006 E1 e A2 A1 b 0.10(0.004) M 0.25 0.010 SEATING PLANE MILLIMETERS 0.65 BSC 0.256 6.25 0.028 0.50 16 0o - 0.70 6 16 8o 0o - 6.50 7 8o Rev. 1 2/02 2. Dimensioning and tolerancing per ANSI Y14.5M-1982. 3. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 4. Dimension “E1” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.15mm (0.006 inch) per side. 5. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area. 6. “L” is the length of terminal for soldering to a substrate. 7. “N” is the number of terminal positions. 8. Terminal numbers are shown for reference only. 9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall be 0.08mm (0.003 inch) total in excess of “b” dimension at maximum material condition. Minimum space between protrusion and adjacent lead is 0.07mm (0.0027 inch). 10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact. (Angles in degrees) 12 FN6111.0 January 27, 2005 ISL8499 Quad Flat No-Lead Plastic Package (QFN) Micro Lead Frame Plastic Package (MLFP) L16.3x3 16 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE 2X MILLIMETERS 0.15 C A D A 9 D/2 D1 D1/2 2X N 6 INDEX AREA 0.15 C B 1 2 3 E1/2 E 2X 2X TOP VIEW 0.15 C A A 0.90 1.00 - - - 0.05 - A2 - - 1.00 9 A3 0.20 REF 0.18 0 0.08 C SEATING PLANE A3 SIDE VIEW 9 5 NX b 4X P D1 2.75 BSC 9 1.35 1.50 1.65 7, 8, 10 3.00 BSC - 2.75 BSC 1.35 1.50 9 1.65 7, 8, 10 0.50 BSC - k 0.20 - - - L 0.30 0.40 0.50 8 N 16 2 Nd 4 3 Ne P - - 0.60 NX k θ - - 12 D2 2 N 5, 8 - 8 7 4 3 9 9 Rev. 1 6/04 4X P NOTES: 1 (DATUM A) 2 3 6 INDEX AREA NX L N e 1. Dimensioning and tolerancing conform to ASME Y14.5-1994. (Ne-1)Xe REF. E2 E2/2 2. N is the number of terminals. 7 3. Nd and Ne refer to the number of terminals on each D and E. 8 4. All dimensions are in millimeters. Angles are in degrees. 5. Dimension b applies to the metallized terminal and is measured between 0.15mm and 0.30mm from the terminal tip. 9 CORNER OPTION 4X (Nd-1)Xe REF. 6. The configuration of the pin #1 identifier is optional, but must be located within the zone indicated. The pin #1 identifier may be either a mold or mark feature. BOTTOM VIEW A1 7. Dimensions D2 and E2 are for the exposed pads which provide improved electrical and thermal performance. NX b 5 8. Nominal dimensions are provided to assist with PCB Land Pattern Design efforts, see Intersil Technical Brief TB389. SECTION "C-C" C L 9. Features and dimensions A2, A3, D1, E1, P & θ are present when Anvil singulation method is used and not present for saw singulation. C L L1 0.30 3.00 BSC 0.10 M C A B D2 (DATUM B) A1 0.23 9 D e / / 0.10 C C C C 0.80 E2 A2 NOTES A E1 B MAX A1 E 0.15 C B 8 NOMINAL D2 9 4X MIN b E/2 E1 SYMBOL 10 L e L1 10 L 10. Compliant to JEDEC MO-220VEED-2 Issue C, except for the E2 and D2 MAX dimension. e TERMINAL TIP FOR ODD TERMINAL/SIDE FOR EVEN TERMINAL/SIDE All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 13 FN6111.0 January 27, 2005