ISP817X, ISP827X, ISP847X ISP817, ISP827, ISP847 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 ISP817X ISP817 2.54 Dimensions in mm 1 2 7.0 6.0 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 l Certified to EN60950 by the following Test Bodies :Nemko - Certificate No. P96102022 Fimko - Registration No. 192313-01..25 Semko - Reference No. 9639052 01 Demko - Reference No. 305969 1.2 5.08 4.08 7.62 4.0 3.0 13° Max 0.5 3.0 0.5 0.26 3.35 ISP827X DESCRIPTION ISP827 2.54 The ISP817, ISP827, ISP847 series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo 7.0 transistors in space efficient dual in line plastic 6.0 packages. 1.2 FEATURES 10.16 l Options :9.16 10mm lead spread - add G after part no. 4.0 3.0 Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. 0.5 l High Current Transfer Ratio (50% min) 3.0 l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) 3.35 l High BVCEO ( 35Vmin ) 0.5 l All electrical parameters 100% tested l Custom electrical selections available ISP847X APPLICATIONS ISP847 l Computer terminals 2.54 l Industrial systems controllers l Measuring instruments l Signal transmission between systems of 7.0 different potentials and impedances 6.0 OPTION SM SURFACE MOUNT OPTION G 7.62 1.4 0.9 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax : (01429) 863581 e-mail [email protected] http://www.isocom.com 26/7/99 8 2 3 7 6 5 4 7.62 13° Max 0.26 1 16 15 14 2 3 4 13 5 12 6 11 7 8 10 9 7.62 4.0 3.0 13° Max 0.5 0.26 10.16 1 1.2 20.32 19.32 1.2 0.6 10.2 9.5 4 3 3.0 0.5 3.35 0.26 ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail [email protected] http://www.isocom.com DB92275A-AAS/A2 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 125°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation 35V 6V 150mW POWER DISSIPATION Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) PARAMETER Input Output Coupled Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) MIN TYP MAX UNITS 1.2 V V µA IF = 20mA IR = 10µA VR = 6V V IC = 1mA 100 V nA IE = 100µA VCE = 20V ISP817GB, ISP827GB, ISP847GB 50 80 130 200 300 100 600 160 260 400 600 600 % % % % % % 5mA IF , 5V VCE 5mA IF , 5V VCE 5mA IF , 5V VCE 5mA IF , 5V VCE 5mA IF , 5V VCE 5mA IF , 5V VCE ISP817BL, ISP827BL, ISP847BL 200 600 % 5mA IF , 5VVCE 0.2 V VRMS VPK Ω µs µs 20mA IF , 1mA IC See note 1 See note 1 VIO = 500V (note 1) VCE = 2V , IC = 2mA, RL = 100Ω 6 10 Collector-emitter Breakdown (BVCEO) 35 ( Note 2 ) Emitter-collector Breakdown (BVECO) 6 Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) (Note 2) ISP817, ISP827, ISP847 ISP817A,ISP827A,ISP847A ISP817B,ISP827B,ISP847B ISP817C,ISP827C,ISP847C ISP817D,ISP827D,ISP847D Collector-emitter Saturation VoltageVCE (SAT) Input to Output Isolation Voltage VISO 5300 7500 Input-output Isolation Resistance RISO 5x1010 Output Rise Time tr Output Fall Time tf Note 1 Note 2 26/7/99 1.4 TEST CONDITION 4 3 18 18 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB92275A-AAS/A2 150 100 50 0 -30 0 25 50 75 100 125 6 5 3 2 1 0 0 5 15 Collector Current vs. Collector-emitter Voltage 60 50mA 50 TA = 25°C 30mA Collector current I C (mA) 50 Forward current I F (mA) 10 Forward current IF (mA) Forward Current vs. Ambient Temperature 40 30 20 10 0 20mA 40 15mA 30 10mA 20 10 IF = 5mA 0 -30 0 25 50 75 100 125 0 Ambient temperature TA ( °C ) 2 4 6 8 10 Collector-emitter voltage VCE ( V ) Collector-emitter Saturation Voltage vs. Ambient Temperature Current Transfer Ratio vs. Forward Current 320 0.14 0.12 Current transfer ratio CTR (%) Collector-emitter saturation voltage V CE(SAT) (V) TA = 25°C 4 Ambient temperature TA ( °C ) IF = 20mA IC = 1mA 0.10 0.08 0.06 0.04 0.02 280 240 200 160 120 80 VCE = 5V TA = 25°C 40 0 0 -30 0 25 50 75 Ambient temperature TA ( °C ) 26/7/99 15mA =1mA 3mA 5mA 10mA Collector-emitter Saturation Voltage vs. Forward Current Ic Collector power dissipation P C (mW) 200 Collector-emitter saturation voltage V CE(SAT) (V) Collector Power Dissipation vs. Ambient Temperature 100 1 2 5 10 20 50 Forward current IF (mA) DB92275A-AAS/A2