INCH-POUND MIL-PRF-19500/354H 5 March 2002 SUPERSEDING MIL-PRF-19500/354G 23 April 2001 The documentation and process conversion measures necessary to comply with this document shall be completed by 5 April 2002. PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N2604, 2N2604UB, 2N2605 AND 2N2605UB JAN, JANTX, JANTXV, AND JANS, JANHC, JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, silicon, low-power transistors for use in low noise-level amplifier applications. Four levels of product assurance are provided for each encapsulated device type and two levels for each unencapsulated device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-46), figure 2 (UB), and figures 3 and 4 die. 1.3 Maximum ratings. Type 2N2604, UB 2N2605, UB PT (1) TA = +25°C MW 400 400 VCBO VEBO VCEO IC TJ and TSTG RθJA V dc 80 70 V dc 6 6 V dc 60 60 mA dc 30 30 °C -65 to +200 -65 to +200 °C/W 437 437 (1)Derate linearly at 2.28 mW/°C above TA = +25°C. 1.4 Primary electrical characteristics. hFE1 VCE=5 V dc IC=10 µ dc Min Max 2N2604 40 120 2N2605 100 300 hfe VCE=5 V dc IC=1 mA dc f=1 kHz 2N2604 60 180 2N2605 150 450 |hfe| VCE=5 V dc IC=500 µA dc f=30 MHz 1 8 Cobo VCB=5 V dc IE=0 100 kHz ≤ f ≤ 1 MHz VBE(sat) IC=10 mA dc IB=500 µA dc VCE(sat) IC=10 mA dc IB=500 µA dc PF V dc 0.7 0.9 V dc 6 0.3 Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/354H 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards and handbooks. The following specifications, standards and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM - DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 (TO-46), figure 2 (UB), and on figures 3 and 4 die. 2 MIL-PRF-19500/354H Symbol CD CH HD LC LD LL LU L1 L2 Q TL TW r α Dimensions Inches Millimeters Min Max Min Max .178 .195 4.52 4.95 .065 .085 1.65 2.16 .209 .230 5.31 5.84 .100 TP 2.54 TP .016 .021 0.41 0.53 .500 1.750 12.70 44.45 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .040 1.02 .028 .048 0.71 1.22 .036 .046 0.91 1.17 .010 0.25 45° TP 45° TP Note 5 6 6 6 6 6 4 3, 8 3, 8 9 5 NOTES: 1. Dimensions are in inches. Lead 1 is emitter, lead 2 is base, and lead 3 is collector. 2. Metric equivalents are given for general information only. 3. Symbol TL is measured from HD maximum. 4. Details of outline in this zone are optional. 5. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by the gauge and gauging procedure. 6. Symbol LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. 7. Lead number three is electrically connected to case. 8. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 9. Symbol r applied to both inside corners of tab. 10. In accordance with ANSI Y14.5M, diameters are equivalent to φx symbology. FIGURE 1. Physical dimensions - TO-46. 3 MIL-PRF-19500/354H Dimensions Symbol A A1 B1 B2 B3 D D1 D2 D3 E E3 L1 L2 Inches Min .046 .017 .016 .016 .016 .085 .071 .035 .085 .115 .022 .022 Millimeters Min Max 0.97 1.42 0.43 0.89 0.41 0.61 0.41 0.61 0.41 0.61 2.41 2.74 1.81 2.01 0.89 0.99 2.41 2.74 2.82 3.25 3.25 0.56 0.96 0.56 0.96 Max .056 .035 .024 .024 .024 .108 .079 .039 .108 .128 .128 .038 .038 Note NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. FIGURE 2. Physical dimensions, surface mount (UB version). 4 MIL-PRF-19500/354H 1. 2. 3. 4. Chip size Chip thickness Top metal Back metal 5. Backside 6. Bonding pad 7. Passivation .015 x .019 inch ±.001 inch, (0.381 x 0.483 ±0.0254 mm). .010 ±.0015 inch, (0.254 ±0.381). Aluminum 15,000Å minimum, 18,000Å nominal. A. Gold 2,500Å minimum, 3,000Å nominal. B. Eutectic Mount - No Gold. Collector. B = .003 inch, (0.076 mm), E = .004 inch, (0.102 mm) diameter. Si3N4 (Silicon Nitride) 2kÅ min, 2.2kÅ nom. FIGURE 3. JANHC and JANKC A-version die dimensions. 5 MIL-PRF-19500/354H Die size: Die thickness: Base pad: Emitter pad: Back metal: Top metal: Back side: Glassivation: .018 x .018 inch (0.457 x 0.457 mm). .008 ±.0016 inch (0.203 ±0.406 mm). .0025 inch (0.0635 mm) diameter. .003 inch (0.076 mm) diameter. Gold, 6500 ±1950 Ang. Aluminum, 19500 ±2500 Ang. Collector. SiO2, 7500 ±1500 Ang. FIGURE 4. JANHC and JANKC B-version die dimensions. 6 MIL-PRF-19500/354H 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750 and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in paragraph 1.3, 1.4, and table I. 3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. * 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. * 4.2.2 Group E qualification. Group E inspection shall be performed herein for qualification or requalification only. In case qualification was rewarded to a prior revision of the associated specification that did not request the performance of table II tests, the tests specified in table II herein shall be performed by the first inspection lot processed to this revision to maintain qualification. 7 MIL-PRF-19500/354H * 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) 3c Measurement JANS level JANTX and JANTXV levels 9 Thermal impedance method 3131 of MIL-STD-750. ICBO1 and hFE2 Thermal impedance method 3131 of MIL-STD-750. Not applicable 10 24 hours minimum 24 hours minimum 11 ICBO1; hFE2; ∆ICBO1 = 100 percent or 2 nA dc, whichever is greater; ∆hFE2 = ±15 percent change of initial value. See 4.3.1 Subgroups 2 and 3 of table I herein; ∆ICBO1 = 100 percent or 2 nA dc, whichever is greater; ∆hFE2 = ±15 percent change of initial value. ICBO1 and hFE2 12 13 See 4.3.1 Subgroup 2 of table I herein; ∆ICBO1 = 100 percent or 2 nA dc, whichever is greater; ∆hFE2 = ±25 percent change of initial value. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = room ambient as defined in the general requirements of 4.5 of MIL-STD-750, PT = 400 mW see 1.3 herein. 4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements (end-points) and delta requirements shall be in accordance with group A, subgroup 2 and 4.5.3 herein, delta requirements only apply to subgroups B4, and B5. See 4.4.2.2 herein for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) and delta requirements for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2 herein and shall be in accordance with group A, subgroup 2 and 4.5.3 herein. 8 MIL-PRF-19500/354H 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition * B4 1037 VCB = 10 V dc, 2,000 cycles. * B5 1027 (Note: If a failure occurs, resubmission shall be at the test conditions of the original sample.) VCB = 10 V dc, PD ≥ 100 percent of maximum rated PT (see 1.3). Option 1: 96 hours minimum, sample size in accordance with table VIa of MIL-PRF-19500, adjust TA or PD to achieve TJ = +275°C minimum. Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TA or PD to achieve TJ = +225°C minimum. 4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot shall be scrapped. Step Method Condition 1 1039 Steady-state life: Test condition B, 340 hours minimum, VCB = 10 - 30 V dc, power shall be applied to achieve PT ≥ 400 mW, n = 45 devices, c = 0 2 1039 The steady-state life test of step 1 shall be extended to 1,000 hours for each die design. Samples shall be selected from a wafer lot every twelve months of wafer production. Group B, step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0. 4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot. See MIL-PRF-19500. b. Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2, conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. 4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and JANTXV) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in accordance with group A, subgroup 2 and 4.5.3 herein; delta requirements only apply to subgroup C6. 9 MIL-PRF-19500/354H 4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition E (not applicable to UB). C6 1026 1,000 hours at VCB = 10 - 30 V dc; power shall be applied PT ≥ 400 mW. 4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup * Method Condition C2 2036 Test condition E, not applicable for UA and UB devices. C5 3131 RθJC (see 1.3). C6 Not applicable. 4.4.4 Group E Inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified herein. Electrical measurements (endpoints) and delta measurements shall be in accordance with the applicable steps of 4.5.3 and table I, subgroup 2 herein; except, ZθJX need not be performed. 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurements shall be as specified in section 4 of MIL-STD-750. 4.5.2 Noise figure. The noise figure shall be measured using commercially available test equipment and its associated standard test procedures. 4.5.3 Delta requirements. Delta requirements shall be as specified below: Step Inspection MIL-STD-750 Method Symbol Limit Conditions 1 Collector-base cutoff current 3036 Bias condition D, VCB = 50 V dc ∆ICB01 (1) 100 percent of initial value or 5 nA dc, whichever is greater. 2 Forward current transfer ratio 3076 VCE = 5 V dc; IC = 500 uA dc; pulsed see 4.5.1 ∆hFE2 (1) ±25 percent change from initial reading. (1) Devices which exceed the group A limits for this test shall not be accepted. 10 Unit MIL-PRF-19500/354H TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Method Subgroup 1 2/ Limit Symbol Conditions 2071 n = 45 devices, c = 0 Solderability 3/ 4/ 2026 n = 15 leads, c = 0 Resistance to solvents 3/ 4/ 5/ 1022 n = 15 devices, c = 0 Temp cycling 3/ 4/ 1051 Test condition C, 25 cycles. n = 22 devices, c = 0 1071 n = 22 devices, c = 0 Min Unit Max Visual and mechanical examination 3/ Heremetic seal 4/ Fine leak Gross leak Electrical measurements 4/ Group A, subgroup 2 Bond strength 3/ 4/ 2037 Precondition TA = +250°C at t = 24 hrs or TA = +300°C at t = 2 hrs n = 11 wires, c = 0 Subgroup 2 µA dc 10 ICBO2 Collector - base leakage current 2N2604 2N2605 3036 Collector - emitter breakdown voltage 3011 Bias condition D; IC = 10 mA dc; pulsed (see 4.5.1) V(BR)CEO Emitter - base cutoff current 3061 Bias condition D; VEB = 6 V dc IEBO2 10 µA dc Collector - base cutoff current 3036 Bias condition D; VCB = 50 V dc ICBO1 10 NA dc Emitter - base cutoff current 3061 Bias condition D; VEB = 5 V dc IEBO 2 NA dc Bias condition D; VCB = 80 V dc VCB = 70 V dc See footnotes at end of table. 11 60 V dc MIL-PRF-19500/354H TABLE I. Group A inspection - Continued. Inspection 1/ Symbol MIL-STD-750 Method Conditions Unit Limit Min Max Subgroup 2 - Continued. Collector - emitter cutoff current 3041 Bias condition C; VCE = 50 V dc ICES Forward current transfer ratio 2N2604 2N2605 3076 VCE = 5 V dc; IC = 10 µA dc hFE1 40 100 120 300 Forward current transfer ratio 2N2604 2N2605 3076 VCE = 5 V dc; IC = 500 µA dc hFE2 60 150 180 450 Forward current transfer ratio 2N2604 2N2605 3076 VCE = 5 V dc; IC = 10 mA dc hFE3 40 100 160 400 Base - emitter voltage (saturated) 3066 Test condition A; IC = 10 mA dc; IB = 500 µA dc VBE(sat) 0.7 0.9 V dc Collector - emitter voltage (saturated) 3071 IC = 10 mA dc; IB = 500 µA dc VCE(sat) 0.3 V dc 5 µA dc 10 nA dc Subgroup 3 TA = +150°C High-temperature operation: Collector - base cutoff current 3036 Low-temperature operation: Forward current transfer ratio 2N2604 2N2605 Bias condition D; VCB = 50 V dc ICBO2 TA = -55°C 3076 VCE = 5 V dc; IC = 10 µA dc hFE4 15 30 See footnotes at end of table. 12 MIL-PRF-19500/354H TABLE I. Group A inspection - Continued. Inspection 1/ Symbol MIL-STD-750 Method Conditions Unit Limit Min Max 1 2 10 20 Subgroup 4 Small-signal shortcircuit input impedance 3201 VCE = 5 V dc; IC = 1 mA dc; f = 1 kHz hie 2N2604 2N2605 Small-signal opencircuit reverse-voltage transfer ratio 3211 VCE = 5 V dc; IC = 1 mA dc; f = 1 kHz hre Small-signal opencircuit output admittance 3216 VCE = 5 V dc; IC = 1 mA dc; f = 1 kHz hoe 10 x 10 2N2604 2N2605 Small-signal shortcircuit forward-current transfer ratio 40 60 3206 VCE = 5 V dc; IC = 1 mA dc; f = 1 kHz 3306 VCE = 5 V dc; IC = 0.5 mA dc; f = 30 MHz Open circuit output capacitance 3236 VCB = 5 V dc; IE = 0; 100 kHz ≤ f ≤ 1 MHz Noise figure 3246 VCE = 5 V dc; IC = 10 µA dc; Rg = 10 kΩ; f = 100 Hz Noise figure 3246 Noise figure 3246 -4 µmhos µmhos hfe 2N2604 2N2605 Magnitude of common emitter small-signal short-circuit forwardcurrent transfer ratio kΩ kΩ |hfe| Cobo 60 150 180 450 1 8 6 PF F1 5 dB VCE = 5 V dc; IC = 10 µA dc; Rg = 10 kΩ; f = 1 kHz F2 3 dB VCE = 5 V dc; IC = 10 µA dc; Rg = 10 kΩ; f = 10 kHz F3 3 dB 1/ For sampling plan unless otherwise specified see MIL-PRF-19500. 2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon submission. 3/ Separate samples may be used. 4/ Not required for JANS devices. 5/ Not required for laser marked devices. 13 MIL-PRF-19500/354H TABLE II. Group E inspection (all quality levels) - for qualification only. Inspection MIL-STD-750 Method * Conditions 45 devices c=0 Subgroup 1 1051 Test condition C, 500 cycles Temperature cycling (air to air) Hermetic seal Qualification 1071 Fine leak Gross leak Electrical measurements * See group A, subgroup 2 herein. Subgroup 2 Intermittent life 45 devices c=0 1037 Electrical measurements VCB = 10 V dc, 6,000 cycles. See group A, subgroup 2 herein. Subgroups 3, 4, 5, 6, and 7 Not applicable * Subgroup 8 Reverse stability 1033 Condition A for devices ≥ 400 V dc. Condition B for devices < 400 V dc. 14 45 devices c=0 MIL-PRF-19500/354H 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Title, number, and date of this specification. b. Issue of DoDISS to be cited in the solicitation and, if required, the specified issue of individual documents referenced (see 2.2.1). c. Lead finish (see 3.4.1). d. Type designation and product assurance level. e. Packaging requirements (see 5.1). 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturer’s List QML-19500 whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000. 6.4 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter version (example, JANHCA2N2604) will be identified on the QPL. JANC ordering information Manufacturer PIN 2N2604 2N2605 43611 34156 JANHCA2N2604, JANKCA2N2604 JANHCA2N2605, JANKCA2N2605 JANHCB2N2604, JANKCB2N2604 JANHCB2N2605, JANKCB2N2605 * 6.5 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue. 15 MIL-PRF-19500/354H Custodians: Army - CR Navy - EC Air Force - 11 NASA - NA DLA - CC Preparing activity: DLA - CC (Project 5961-2568) Review activities: Army - AR, AV, MI Navy - AS, MC Air Force - 19 16 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/354H 2. DOCUMENT DATE 5 March 2002 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER, TYPES 2N2604, 2N2604UB, 2N2605 AND 2N2605UB JAN, JANTX, JANTXV, AND JANS, JANHC, JANKC 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) c. ADDRESS (Include Zip Code) b. ORGANIZATION d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL 7. DATE SUBMITTED 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center Columbus, ATTN: DSCC-VAC P.O. Box 3990 Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN FAX EMAIL 614-692-0510 850-0510 614-692-6939 [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99