ETC JANTX2N3743

INCH-POUND
MIL-PRF-19500/397G
1 April 2002
SUPERSEDING
MIL-PRF-19500/397F
21 April 2000
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 1 July 2002.
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON
TYPES 2N3743, 2N4930, AND 2N4931
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, high-voltage transistor.
Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of
product assurance for die are provided for each unencapsulated device type as specified in MIL-PRF-19500
* 1.2 Physical dimensions. See figure 1 (TO-39) and figures 2 and 3 for JANHC and JANKC (die) dimensions.
1.3 Maximum ratings.
Type
2N3743
2N4930
2N4931
PT (1)
TA = +25°C
PT (2)
TC = +25°C
VCBO
VEBO
VCEO
IC
TJ and TSTG
W
1.0
1.0
1.0
W
5
5
5
V dc
300
200
250
V dc
5
5
5
V dc
300
200
250
mA dc
200
200
200
°C
-65 to +200
-65 to +200
-65 to +200
(1) Derate linearly at 5.71 mW/°C above TA > +25°C.
(2) Derate linearly at 28.6 mW/°C above TC > +25°C.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCCVAC, Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement
Proposal (DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/397G
1.4 Primary electrical characteristics at TA = +25°C.
Limits
Min
Max
|hfe|
hFE1 (1)
hFE4 (1)
VBE(sat)2 (1)
VCE(sat)1 (1)
Cobo
IC = 10 mA dc
IC = 0.1 mA dc
IC = 30 mA dc
IC = 30 mA dc
IE = 0
VCE = 20 V dc
f = 20 MHz
VCE = 10 V dc
VCE = 10 V dc
IC = 30 mA
dc
IB = 3 mA dc
IB = 3 mA dc
V dc
V dc
VCB = 20 V dc
f ≥ 0.1 MHz
pF
2.0
8.0
30
50
200
1.2
1.2
15
(1) Pulsed (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards and handbooks. The following specifications, standards and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein (except for related associated specifications or specification sheets), the text of this document takes
precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific
exemption has been obtained.
2
MIL-PRF-19500/397G
Symbol
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
Q
TL
TW
r
α
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.305
.335
7.75
8.51
.240
.260
6.12
6.60
.335
.370
8.51
9.40
.200 TP
5.08 TP
.016
.019
0.41
0.48
0.500 0.750
12.7
19.0
.016
.019
0.41
0.48
.050
1.27
.250
6.35
.100
2.54
.030
0.76
.029
.045
0.74
1.14
.028
.034
0.71
0.86
.010
0.25
45° TP
45° TP
Note
7
8,9
8,9
8,9
8,9
6
5
3,4
3, 4
NOTES:
Dimension are in inches.
Metric equivalents are given for general information only.
Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
Dimension TL measured from maximum HD.
Body contour optional within zone defined by HD, CD, and Q.
CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007
inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The
device may be measured by direct methods or by the gauge and gauging procedure.
8. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is
uncontrolled in L1 and beyond LL minimum.
9. All three leads.
10. The collector shall be internally connected to the case.
11. Dimension r (radius) applies to both inside corners of tab.
12. In accordance with ANSI Y14.5M, diameters are equivalent to φx symbology.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
1.
2.
3.
4.
5.
6.
7.
FIGURE 1. Physical dimensions (TO-39).
3
MIL-PRF-19500/397G
Letter
Dimensions
Inches
A
C
Min
.041
.041
Millimeters
Max
.041
.041
Min
1.04
1.04
Max
1.04
1.04
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. The physical characteristics of the die are:
Thickness:
.006 inch (0.15 mm) to .012 inch (0.30 mm).
Top metal:
Aluminum 17,500 Å minimum, 20,000 Å nominal.
Back metal:
Gold 2,500 Å minimum, 3,000 Å nominal.
Back side:
Collector.
Bonding pad: B = .004 inch (0.10 mm) x .005 inch (0.13 mm).
E = .004 inch (0.10 mm) x .0055 inch (0.14 mm).
FIGURE 2. JANHC and JANKC (A-version) die dimensions.
4
MIL-PRF-19500/397G
1.
2.
3.
4.
Chip size:
Chip thickness:
Top metal:
Back metal:
5. Backside:
6. Bonding pad:
40 x 40 mils ± 1 mil.
10 ± 1.5 mil.
Aluminum 15,000Å minimum, 18,000Å nominal.
A. Al/Ti/Ni/Ag 12kÅ/3kÅ/7kÅ/7kÅ min.,15kÅ/5kÅ/10kÅ/10kÅ nom.
B. Gold 2,500Å minimum, 3,000Å nominal.
C. Eutectic Mount – No Gold.
Collector
B = 6 x 8 mils, E = 6 x 4 mils.
FIGURE 3. JANHC and JANKC (B-version) die dimensions.
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MIL-PRF-19500/397G
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figure 1 (TO-39) and figures 2 and 3 for JANHC and JANKC (die) herein.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4 and table I.
3.7 Electrical test requirements. The electrical test requirements shall be group A as specified herein.
3.8 Marking. Marking shall be in accordance with MIL-PRF-19500, except for the UB suffix package. Marking on
the UB package shall consist of an abbreviated part number, the date code, and the manufacturers symbol or logo.
The prefixes JAN, JANTX, JANTXV, and JANS can be abbreviated as J, JX, JV, and JS respectively. The "2N" prefix
and the "UB" suffix can also be omitted.
3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and table II
herein.
* 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with
MIL-PRF-19500.
* 4.2.2 Group E qualification. Group E qualification shall be performed herein for qualification or requalification
only. In case qualification was awarded to a prior revision of the associated specification that did not request the
performance of table II tests, the tests specified in table II herein shall be performed by the first inspection lot to this
revision to maintain qualification.
6
MIL-PRF-19500/397G
* 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of MILPRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein.
Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table IV
of MIL-PRF-19500)
Measurement
JANS level
JANTX and JANTXV levels
3c
Thermal impedance, method 3131
of MIL-STD-750.
Thermal impedance, method 3131
of MIL-STD-750.
9
ICBO1
Not applicable
11
ICBO1 and hFE4
∆ICBO = 100 percent of initial value
or 50 nA dc, whichever is greater
ICBO1 and hFE4
12
See 4.3.1
See 4.3.1
13
Subgroups 2 and 3 of table I
herein;
Subgroup 2 of table I herein;
∆ICBO1 = 100 percent of initial
value or 50 nA dc, whichever is
greater; ∆hFE4 = ±20 percent
∆ICBO1 = 100 percent of initial
value or 50 nA dc, whichever is
greater; ∆hFE4 = ±15 percent
* 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB ≥ 30 V dc, TA = +30°C ±5°C.
NOTE: No heatsink or forced air cooling on the devices shall be permitted. PT adjusted to achieve TJ of +175°C
minimum.
* 4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows
JANS requirements; the JANHC follows JANTX requirements.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I
herein. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I,
subgroup 2 herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in tables VIa (JANS) and VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and 4.4.2.1 and
4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with the applicable inspections of table
I, subgroup 2 herein.
7
MIL-PRF-19500/397G
* 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup
Method
Condition
B4
1037
VCE = 30 V dc, 2,000 cycles.
B5
1027
(NOTE: If a failure occurs, resubmission shall be at the test conditions of
the original sample). VCB = 10 V dc; PD ≥ 100 percent of maximum rated
PT (see 1.3).
Option 1: 96 hours minimum, sample size in accordance with table VIa of
MIL-PRF-19500, adjust TA or PD to achieve TJ = +275°C minimum.
Option 2: 216 hours, sample size = 45, c = 0; adjust TA or PD to achieve
TJ = +225°C minimum.
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). 1/
Step
Method
Condition
1
1039
Steady-state life: Test condition B, 340 hours, VCB = 10 to 30 V dc, TJ =
175°C min. No heat sink shall be permitted. n = 45 devices, c = 0.
2
1039
The steady-state life test of step 1 shall be extended to 1,000 hours for
each die design. Samples shall be selected from a wafer lot every twelve
months of wafer production, however, group B shall not be required more
than once for any single wafer lot. n = 45, c = 0.
3
1032
High-temperature life (non-operating), TA = +200°C. n = 22, c = 0.
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a.
For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers
(or from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each
inspection lot. See MIL-PRF-19500.
b.
Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2,
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high
temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX,
and JANTXV) may be pulled prior to the application of final lead finish.
4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VII of MIL-PRF-19500 and in 4.4.3.1 (JANS).and 4.4.3.2 (JAN, JANTX, and JANTXV)
herein for group C testing. Electrical measurements (end-points) shall be in accordance with group A, subgroup 2.
__________
1/ Separate samples may be used for each step. In the event of a group B failure, the manufacturer may double the
sample size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new
“assembly lot” option is exercised, the failed assembly lot shall be scrapped.
8
MIL-PRF-19500/397G
4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500.
Method
Condition
C2
2036
Test condition E.
C6
1026
VCB = 10 to 30 V dc; TJ = + 175°C minimum. No heat sink or forced-air
cooling on the devices shall be permitted.
Subgroup
* 4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Method
Condition
C2
2036
Test condition E.
C5
3131
See 4.5.2.
Subgroup
C6
Not applicable
4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any lot
containing the intended package type and lead finish procured to the same specification which is submitted to and
passes group A tests for conformance inspection. Testing of a subgroup using a single device type enclosed in the
intended package type shall be considered as complying with the requirements for that subgroup.
* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified herein. Electrical measurements (endpoints) shall be in accordance with table I, subgroup 2 herein.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
* 4.5.2. Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method
3131 of MIL-STD-750. The limit of RθJC(max) shall be 35°C/W.
a.
IM measurement ........................................................................10 mA.
b.
VCE measurement voltage (same as VH).................................25 V dc.
c.
IH collector heating current .......................................................0.2 A dc.
d.
VH collector-emitter heating voltage .........................................25 V dc.
e.
tH heating time ........................................................................ 1 second minimum.
f.
tMD measurement delay time ....................................................50 µs maximum.
g.
tSW sampling window time ........................................................10 µs maximum.
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MIL-PRF-19500/397G
TABLE I. Group A inspection.
MIL-STD-750
Inspection 1/
Method
Symbol
Conditions
Limit
Min
Unit
Max
Subgroup 1 2/
Visual and mechanical
examination 3/
2071
n = 45 devices, c = 0
Solderability 3/ 4/
2026
n = 15 leads, c = 0
Resistance to 3/ 4/ 5/
solvent
1022
n = 15 devices, c = 0
Temp cycling 3/ 4/
1051
Test condition C, 25
cycles. n = 22 devices,
c=0
Heremetic seal 4/
1071
n = 22 devices, c = 0
Fine leak
Gross leak
Group A, subgroup 2
Electrical measurements
4/
Bond strength 3/ 4/
2037
Precondition TA = +250°C
at t = 24 hrs or
TA = +300°C at t = 2 hrs,
n = 11 wires, c = 0
3001
Bias condition D,
IC = 100 µA dc
Subgroup 2
Breakdown voltage,
collector to base
V(BR)CBO
2N3743
2N4930
2N4931
Breakdown voltage,
collector to emitter
3011
Pulsed (see 4.5.1), bias
condition D, IC = 1.0 mA dc
3026
Bias condition D,
IE = 100 µA dc
V(BR)EBO
See footnotes at end of table.
10
V dc
V dc
V dc
300
200
250
V dc
V dc
V dc
5
V dc
V(BR)CEO
2N3743
2N4930
2N4931
Breakdown voltage,
emitter to base
300
200
250
MIL-PRF-19500/397G
TABLE I. Group A inspection – Continued.
MIL-STD-750
Inspection 1/
Method
Symbol
Conditions
Limit
Min
Unit
Max
Subgroup 2 - Continued
Collector to base
cutoff current
3036
2N3743
2N4930
2N4931
Bias condition D, IE = 0
ICBO1
250
nA
150
nA dc
VCB = 250 V dc
VCB = 150 V dc
VCB = 200 V dc
Emitter to base
cutoff current
3061
Bias condition D, VEB = 4 V dc
IEBO
Forward current
transfer ratio
3076
Pulsed (see 4.5.1),
IC = 0.1 mA dc, VCE = 10 V dc
hFE1
30
Forward current
transfer ratio
3076
Pulsed (see 4.5.1),
IC = 1.0 mA dc, VCE = 10 V dc
hFE2
40
Forward current
transfer ratio
3076
Pulsed (see 4.5.1),
IC = 10 mA dc, VCE = 10 V dc
hFE3
40
Forward current
transfer ratio
3076
Pulsed (see 4.5.1),
IC = 30 mA dc, VCE = 10 V dc
hFE4
50
Forward current
transfer ratio
3076
Pulsed (see 4.5.1),
IC = 50 mA dc, VCE = 20 V dc
hFE5
30
Collector to emitter
voltage (saturated)
3071
Pulsed (see 4.5.1),
IC = 30 mA dc, IB = 3 mA dc
VCE(sat)1
1.2
V dc
Collector to emitter
voltage (saturated)
3071
Pulsed (see 4.5.1),
IC = 10 mA dc, IB = 1 mA dc
VCE(sat)2
1.0
V dc
Base emitter voltage
(saturated)
3066
Test condition A, IC = 10 mA dc,
IB = 1 mA dc, pulsed (see 4.5.1)
VBE(sat)1
1.0
V dc
Base emitter voltage
(saturated)
3066
Test condition A, IC = 30 mA dc,
IB = 3 mA dc, pulsed (see 4.5.1)
VBE(sat)2
1.2
V dc
See footnotes at end of table.
11
200
MIL-PRF-19500/397G
TABLE I. Group A inspection - Continued.
MIL-STD-750
Inspection 1/
Method
Symbol
Conditions
Limit
Min
Unit
Max
Subgroup 3
High-temperature
operation:
Collector to base
cutoff current
2N3743
2N4930
2N4931
TA = +125°C
3036
Bias condition D
100
ICBO2
µA dc
VCB = 250 V dc
VCB = 150 V dc
VCB = 200 V dc
Low-temperature
operation:
TA = -55°C
3076
Pulsed (see 4.5.1),
IC = 30 mA dc, VCE = 10 V dc
hFE6
Open circuit (output
capacitance)
3236
VCB = 20 V dc, IE = 0, f ≥ 0.1 MHz
Cobo
15
pF
Input capacitance
(output open circuited)
3240
VEB = 1 V dc, IC = 0, f ≥ 0.1 MHz
Cibo
400
pF
Small-signal current
gain
3306
VCE = 20 V dc, IC = 10 mA dc,
f = 20 MHz
|hfe|
2
8
Small-signal current
gain
3206
VCE = 10 V dc, IC = 10 mA dc,
f = 1 kHz
hfe
30
300
3051
TC = +25°C, t ≥ 1 second, 1 cycle
Forward current
transfer ratio
25
Subgroup 4
Subgroup 5
Safe operating area
(dc operation)
Test 1
Test 2
Test 3
IC = 50 mA dc, VCE = 20 V dc
IC = 10 mA dc, VCE = 100 V dc
2N3743
IC = 3.3 mA dc, VCE = 300 V dc
2N4930
IC = 5 mA dc, VCE = 200 V dc
2N4931
IC = 4 mA dc, VCE = 250 V dc
Electrical
measurements
1/
2/
3/
4/
5/
See table I, group A, subgroup 2
herein
For sampling plan, see MIL-PRF-19500.
For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests.
Separate samples may be used.
Not required for JANS.
Not required for laser marked devices.
12
MIL-PRF-19500/397G
* TABLE II. Group E inspection (all quality levels) – for qualification only.
Inspection
MIL-STD-750
Method
Conditions
Subgroup 1
Temperature cycling
(air to air)
Qualification
45 devices
c=0
1051
Test condition C, 500 cycles
Hermetic seal
Fine leak
Gross leak
1071
Electrical measurements
See group A, subgroup 2 herein.
45 devices
c=0
Subgroup 2
Intermittent life
1037
Electrical measurements
VCB = 10 V dc, 6,000 cycles.
See group A, subgroup 2 herein.
Subgroup 3 and 4
Not applicable
5 devices
c=0
Subgroup 5
Barometric pressure
(2N3743 and 2N4931
only)
1001
Pressure = 8 mmHG, normal mounting, t = 60
seconds minimum.
Subgroup 6 and 7
Not applicable
Subgroup 8
Reverse stability
1033
Condition A for devices ≥ 400 V
Condition B for devices < 400 V
13
45 devices
c=0
MIL-PRF-19500/397G
5. PACKAGING
5.1. Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to
contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements
are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency,
or within the Military Departments' System Command. Packaging data retrieval is available from the managing
Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the
responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents must specify the following:
a.
Title, number, and date of this specification.
b.
Issue of DODISS to be cited in the solicitation, and if required, the specific issue of individual documents
referenced (see 2.2.1).
c.
The lead finish as specified (see 3.4.1).
d.
Type designation and quality assurance level.
e.
Packaging requirements (see 5.1).
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,
at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not such
products have actually been so listed by that date. The attention of the contractors is called to these requirements,
and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government
tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered
by this specification. Information pertaining to qualification of products may be obtained from Defense Supply
Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000.
6.4 Substitution information. Devices form this specification supersedes the following commercial Part or
Identifying Number (PIN). This information in no way implies that manufacturers’ PIN’s are suitable as a substitute
for the military PIN.
Military PIN
2N3743
2N4930
2N4931
Superseded commercial types
SUN1446H, SS4238H
SUN1446H, SS5152H
SUN1446H, ST1390H, ST147H
14
MIL-PRF-19500/397G
6.5 Suppliers of JANHC and JANKC die. The qualified die suppliers with the applicable letter version (example,
JANHCA2N3743) will be identified on the qualified manufacturer’s list.
JANC ordering information
Manufacturers
PIN
2N3743
2N4930
2N4931
33178
JANHCA2N3743,
JANKCA2N3743
JANHCA2N4930,
JANKCA2N4930
JANHCA2N4931,
JANKCA2N4931
43611
JANHCB2N3743,
JANKCB2N3743
JANHCB2N4930,
JANKCB2N4930
JANHCB2N4931,
JANKCB2N4931
6.6 Changes from previous issue. The margins of this revision are marked with an asterisk to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
Custodians:
Army - CR
Navy - EC
Air Force - 11
NASA - NA
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2560)
Review activities:
Army - AR, AV, MI
Navy - AS, MC
Air Force – 19, 71
15
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on
current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced
document(s) or to amend contractual requirements.
I RECOMMEND A CHANGE:
1. DOCUMENT NUMBER
MIL-PRF-19500/397G
2. DOCUMENT DATE
1 April 2002
1.
DOCUMENT TITLE
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON TYPES 2N3743, 2N4930, AND 2N4931 JAN, JANTX, JANTXV,
JANS, JANHC, AND JANKC
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
b. ORGANIZATION
c. ADDRESS (Include Zip Code)
d. TELEPHONE (Include Area Code)
COMMERCIAL
DSN
FAX
EMAIL
7. DATE SUBMITTED
8. PREPARING ACTIVITY
a. Point of Contact
Alan Barone
c. ADDRESS
Defense Supply Center Columbus,
ATTN: DSCC-VAC
P.O. Box 3990
Columbus, OH 43216-5000
DD Form 1426, Feb 1999 (EG)
b. TELEPHONE
Commercial
DSN
FAX
EMAIL
614-692-0510
850-0510
614-692-6939
[email protected]
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533
Fort Belvoir, VA 22060-6221
Telephone (703) 767-6888 DSN 427-6888
Previous editions are obsolete
WHS/DIOR, Feb 99