ETC JANTXV2N3501UB

The documentation and process conversion measures necessary to
comply with this document shall be completed by 4 September, 2002.
INCH-POUND
MIL-PRF-19500/366J
4 June 2002
SUPERSEDING
MIL-PRF-19500/366H
28 June 2001
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, AMPLIFIER
TYPES 2N3498, 2N3498L, 2N3499, 2N3499L, 2N3500, 2N3500L, 2N3501, 2N3501L, AND 2N3501UB
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Device types 2N3498, 2N3499, 2N3500 and their corresponding L suffix
versions are inactive for new design after 14 April 1995.
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power amplifier and
switching transistors. Four levels of product assurance are provided for each device type as specified in
MIL-PRF-19500. Two levels of product assurance are provided for die.
1.2 Physical dimensions. See figure 1 (similar to TO- 5, 39), figure 2 (surface mount, 2N3501UB), and figures 3
and 4 (die).
1.3 Maximum ratings.
Types
(1)
2N3498
2N3499
2N3500
2N3501
2N3501UB
*
PT
TA = +25°C
(2)
VCBO
VCEO
VEBO
IC
RθJA
TSTG and TOP
W
V dc
V dc
V dc
mA dc
°C /W
°C
1
1
1
1
(3) 0.5
100
100
150
150
150
100
100
150
150
150
6
6
6
6
6
500
500
300
300
300
175
175
175
175
325
-65 to +200
-65 to +200
-65 to +200
-65 to +200
-65 to +200
(1) Electrical characteristics for "L" suffix devices are identical to their corresponding "non-L" suffix devices.
(2) Derate linearly 5.71 mW/°C for TA > +25°C.
(3) Derate linearly 3.08 mW/°C for TA > +25°C, 2N3501UB.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC,
Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/366J
1.4 Primary electrical characteristics at TA = +25°C.
hFE at VCE = 10 V dc
Type
(1)
hFE1 (2)
IC = 0.1 mA dc
Min
2N3498
2N3499
2N3500
2N3501
Max
20
35
20
35
hFE4 (2)
IC = 150 mA dc
Min
40
100
40
100
hFE5 (2)
IC = 300 mA dc
Max
Max
Min
120
300
120
300
hFE6 (2)
IC = 500 mA dc
Min
Max
15
20
|hfe|
VCE = 20 V dc
Cobo
VCB = 10 V dc
IC = 20 mA dc
f = 100 MHz
IE = 0
100 kHz ≤f ≤ 1 MHz
Min
Max
1.5
1.5
1.5
1.5
15
20
Min
8
8
8
8
Max
10
10
8
8
(1) Electrical characteristics for the "L" and "UB" suffix devices are identical to the corresponding "non-L" and
"non-UB" suffix devices unless otherwise noted.
(2) Pulsed (see 4.5.1).
VCE(sat)
VBE(sat)
(2)
(2)
ton
toff
IC = 150 mA dc
IB1 = 15 mA dc
VEB = 2 V dc
IC = 150 mA dc
IB1 = -IB2 = 15 mA dc
Max
ns
115
115
115
115
Max
ns
1,150
1,150
1,150
1,150
Types
(1)
IC = 150 mA IC = 300 mA dc
dc
IB = 30 mA dc
IB = 15 mA dc
Min
2N3498
2N3499
2N3500
2N3501
Max
Min
Max
IC = 150 mA dc
IC = 300 mA dc
IB = 15 mA dc
IB = 30 mA dc
Min
Max
Min
0.6
0.6
0.4
0.4
Max
1.4
1.4
1.2
1.2
(1) Electrical characteristics for the "L" and "UB" suffix devices are identical to the corresponding "non-L" and
"non-UB" suffix devices unless otherwise noted.
(2) Pulsed see 4.5.1.
2
MIL-PRF-19500/366J
Symbol
CD
CH
HD
LC
LD
LL
LU
L1
L2
TL
TW
P
Q
r
α
Dimensions
Inches
Millimeters
Notes
Min
Max
Min
Max
.305
.335
7.75
8.51
.240
.260
6.10
6.60
.335
.370
8.51
9.40
.200 TP
5.08 TP
6
.016
.021
0.41
0.53
7
See notes 7, 12, and 13
.016
.019
0.41
0.48
7, 13
.050
1.27
13
.250
6.35
13
.029
.045
0.74
1.14
3
.028
.034
0.71
0.86
10, 11
.100
2.54
5
.050
1.27
4
.010
.250
11
6
45° TP
45° TP
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Symbol TL is measured from HD maximum.
4. Details of outline in this zone are optional.
5. Symbol CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic
handling.
6. Leads at gauge plane .054 inch (1.37 mm) +.001 inch (0.03 mm) -.000 inch (0.00 mm) below seating plane
shall be within .007 inch (0.18 mm) radius of true position (TP) relative to tab. Device may be measured by
direct methods or by gauge.
7. Symbol LD applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Lead
diameter shall not exceed .042 inch (1.07 mm) within L1 and beyond LL minimum.
8. Lead designation, shall be as follows: 1 - emitter, 2 - base, 3 - collector.
9. Lead number three is electrically connected to case.
10. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
11. Symbol r applied to both inside corners of tab.
12. For transistor types 2N3498, 2N3499, 2N3500, and 2N3501, LL = .50 inch (12.70 mm) minimum and .750
inch (19.05 mm) maximum. For transistor types 2N3498L, 2N3499L, 2N3500L, and 2N3501L,
LL = 1.50 inch (38.10 mm) minimum and 1.750 inch (44.45 mm) maximum.
13. All three leads.
FIGURE 1. Physical dimensions (similar to TO - 5, 39).
3
MIL-PRF-19500/366J
Dimensions
Symbol
A
A1
B1
B2
B3
D
D1
D2
D3
E
E3
L1
L2
Inches
Min
.046
.017
.016
.016
.016
.085
.071
.035
.085
.115
.022
.022
Millimeters
Min
Max
0.97
1.42
0.43
0.89
0.41
0.61
0.41
0.61
0.41
0.61
2.41
2.74
1.81
2.01
0.89
0.99
2.41
2.74
2.82
3.25
3.25
0.56
0.96
0.56
0.96
Max
.056
.035
.024
.024
.024
.108
.079
.039
.108
.128
.128
.038
.038
Note
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
FIGURE 2. Physical dimensions, surface mount (2N3501UB version).
4
MIL-PRF-19500/366J
A - Version
1. Chip size ..................... .040 x .040 inch ±.001 inch (1.016 x 1.016 mm ±0.025mm).
2. Chip thickness ............ .010 ±.0015 inch (0.254 ±0.0381mm).
3. Top metal.................... Aluminum 15,000 nÅ minimum, 18,000Å nominal.
4. Back metal .................. Al/Ti/Ni/Ag 12kÅ/3kÅ/7kÅ/7kÅ min., 15kÅ/5kÅ/10kÅ/10kÅ nom.
Gold 2,500Å minimum, 3,000Å nominal.
Eutectic Mount - No Gold.
5. Backside ..................... Collector.
6. Bonding pad................ B = .006 x .008 inch (0.152 x 0.203 mm),
E = .006 x .004 mils (0.152 x 0.102 mm).
FIGURE 3. Physical dimensions, JANHCA and JANKCA die.
5
MIL-PRF-19500/366J
B
E
B - Version
Die size-------------- .030 (0.762 mm) x .030 inch (0.762 mm).
Die thickness------- .008 (.203 mm) ± .0016 inch (0.041 mm).
Base pad------------ .005 inch (0.127 mm) diameter.
Emitter pad --------- .005 inch (0.127 mm) diameter.
Back metal---------- Gold, 6,500 ± 1,950 Å.
Top metal ----------- Aluminum, 22,500 ± 2,500 Å.
Back side ----------- Collector.
Glassivation -------- SiO2, 7,500 ± 1,500 Å.
FIGURE 4. Physical dimensions, JANHCB and JANKCB die.
6
MIL-PRF-19500/366J
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer’s list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figure 1 (similar to TO- 5, 39), figure 2 (surface mount, 2N3501UB), and figures 3 and 4
(die).
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
7
MIL-PRF-19500/366J
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I herein.
3.7 Electrical test requirements. The electrical test requirements shall be group A as specified herein.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a.
Qualification inspection (see 4.2).
b.
Screening (see 4.3).
c.
Conformance inspection (see 4.4and tables I, II, and III).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
* 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with
MIL-PRF-19500.
* 4.2.2 Group E qualification. Group E qualification shall be performed herein for qualification or requalification
only. In case qualification was awarded to a prior revision of the associated specification that did not request the
performance of table III tests, the tests specified in table III herein shall be performed by the first inspection lot to this
revision to maintain qualification.
8
MIL-PRF-19500/366J
4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see
table IV of
MIL-PRF-19500)
Measurement
JANS level
JANTX and JANTXV levels
3c
Thermal impedance method 3131 of
MIL-STD-750, see 4.3.3. (1)
Thermal impedance method 3131 of
MIL-STD-750, see 4.3.3. (1)
9
ICBO2 and hFE4
Not applicable
11
ICBO2 and hFE4; ∆ICB02 100 percent of
initial value or 5 nA dc, whichever is
greater;
∆hFE4 = ± 15 percent of initial value.
ICBO2 and hFE4
12
See 4.3.2
240 hours minimum
See 4.3.2
80 hours minimum
13
Subgroups 2 and 3 of table I herein;
∆ICBO2 = 100 percent of initial value
or 5 na dc, whichever is greater;
∆hFE4 = ± 15 percent of initial value. (1)
Subgroups 2 of table I herein;
∆ICBO2 = 100 percent of initial value
or 5 na dc, whichever is greater;
∆hFE4 = ± 15 percent of initial value. (1)
(1) Thermal impedance need not be performed if previously done in step 3.
* 4.3.1. Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows
JANS requirements; the JANHC follows JANTX requirements.
4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10-30 V dc; power shall be
applied to achieve TJ = +135°C minimum using a minimum power dissipation = 75 percent of maximum rated PT
(see 1.3). NOTE: No heat sink or forced air cooling on the devices shall be permitted.
4.3.3 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with
method 3131 of MIL-STD-750.
a. IM measurement current -------------5 mA.
b. IH forward heating current ----------100mA (minimum).
c. tH heating time ------------------------- 10 - 20 ms.
d. tmd measurement delay time ------ 100 µs maximum.
e. VCE collector emitter voltage ------ 10 V dc minimum.
The maximum limit for ZθJX under these test conditions are ZθJX (maximum) = 30°C/W (2N3501UB); 25°C/W (all
others).
9
MIL-PRF-19500/366J
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as
specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of
screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb,
group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with
4.4.2).
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements
(end-points) shall be in accordance with group A, subgroup 2. Delta measurements shall be in accordance with
table II herein. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) for
JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2 herein and shall be in accordance with group A,
subgroup 2 herein. Delta measurements shall be after each step in 4.4.2.2 herein and shall be in accordance with
table II herein.
4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup
*
Method Condition
B4
1037
VCB = 10 V dc.
B5
1027
(Note: If a failure occurs, resubmission shall be at the test conditions of the original
sample.) VCB = 10 V dc, PD ≥ 100 percent of maximum rated PT (see 1.3).
Option 1: 96 hours minimum sample size in accordance with table VIa of
MIL-PRF-19500, adjust TA or PD to achieve TJ = +275°C minimum.
Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TA or PD to
achieve TJ = +225°C minimum.
B6
3131
See 4.5.2.
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the
event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot
or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed
assembly lot shall be scrapped.
Step
Method Condition
1
1039
Steady-state life: Test condition B, 340 hours, VCB = 10 - 30 V dc, TJ = +150°C min.
External heating of the device under test to achieve TJ = +150°C minimum is allowed
provided that a minimum of 75 percent of rated power is dissipated. No heat sink or
forced-air cooling on the devices shall be permitted; n = 45 devices, c = 0.
2
1039
The steady-state life test of step 1 shall be extended to 1,000 hours for each die design.
Samples shall be selected from a wafer lot every twelve months of wafer production.
Group B, step 2 shall not be required more than once for any single wafer lot;
n = 45, c = 0.
3
1032
High-temperature life (non-operating), t = 340 hours, TA = +200°C; n = 22, c = 0.
10
MIL-PRF-19500/366J
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a. For JAN, JANTX, and JANTXV, samples shall be selected randomly from a minimum of three wafers (or from
each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot.
See MIL-PRF-19500.
b. Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high
temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and
JANTXV) may be pulled prior to the application of final lead finish.
4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS).and 4.4.3.2 (JAN, JANTX, and
JANTXV) herein for group C testing. Electrical measurements (end-points) shall be in accordance with group A,
subgroup 2. Delta measurements shall be in accordance with table II herein.
4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500.
Subgroup Method
Condition
C2
2036
Test condition E. Not applicable for UB devices.
C6
1026
1,000 hours at VCB = 10 V dc; TJ = +150°C min. External heating of the device
under test to achieve TJ = +150°C minimum is allowed provided that a minimum
of 75 percent of rated power is dissipated. No heat sink or forced-air cooling on device
shall be permitted. Not applicable for UB devices.
4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup
Method
Condition
C2
2036
Test condition E. Not applicable for UB devices.
C5
3131
See 4.5.2 herein; n = 22, c = 0.
C6
Not applicable.
4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any
inspection lot containing the intended package type and lead finish procured to the same specification which is
submitted to and passes group A tests for conformance inspection. When the final lead finish is solder or any
plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of
final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be
considered as complying with the requirements for that subgroup.
* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified herein. Electrical measurements
(endpoints) and delta measurements shall be in accordance with the applicable steps of table II and table I subgroup
2 herein.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
11
MIL-PRF-19500/366J
4.5.2 Thermal resistance. Thermal resistance measurements shall be performed in accordance with method
3131 of MIL-STD-750. The following conditions shall apply:
a.
Collector current magnitude or emitter current magnitude during heating shall be 50 mA dc.
b.
Collector-emitter voltage or collector-base voltage magnitude shall be 12 V dc.
c.
Reference temperature measuring point shall be case ambient air.
d.
Reference point temperature shall be +25°C.
e.
Mounting arrangement shall be case to ambient air.
f.
Maximum limit shall be RθJA = 175°C/W.
12
MIL-PRF-19500/366J
TABLE I. Group A inspection.
Inspection
1/ 2/
MIL-STD-750
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 1 3/
Visual and mechanical 4/
examination
2071
n = 45 devices, c = 0
Solderability 4/ 5/
2026
n = 15 leads, c = 0
Resistance to solvents
4/ 5/ 6/
1022
n = 15 devices, c = 0
Temp cycling 4/ 5/
1051
Test condition C, 25 cycles.
n = 22 devices, c = 0
Hermetic seal 5/
Fine leak
Gross leak
1071
n = 22 devices, c = 0
Group A, subgroup 2
Electrical measurements 5/
Bond strength 4/ 5/
*Decap internal visual (design
verification) 4/
2037
Precondition TA = +250°C at
t = 24 hrs or TA = +300°C at
t = 2 hrs; n = 11 wires, c = 0
2075
n = 4 device, c = 0
3036
Bias condition D;
Subgroup 2
Collector to base, cutoff current
2N3498, 2N3499
2N3500, 2N3501, 2N3501UB
ICBO1
10
µA dc
ICEO
1
µA dc
VCB = 100 V dc
VCB = 150 V dc
Collector to emitter cutoff
current
2N3498, 2N3499
2N3500, 2N3501, 2N3501UB
3041
Bias condition D; pulsed (see
4.5.1)
VCE = 80 V dc
VCE = 120 V dc
Breakdown voltage, collector to
emitter
2N3498, 2N3499
2N3500, 2N3501, 2N3501UB
3011
Bias condition D; IC = 10 mA dc;
pulsed (see 4.5.1)
Emitter to base, cutoff current
3061
Bias condition D; VEB = 6 V dc
IEBO1
Collector to base cutoff current
2N3498, 2N3499
2N3500, 2N3501, 2N3501UB
3036
Bias condition D;
VCB = 50 V dc
VCB = 75 V dc
ICBO2
Emitter to base cutoff current
3061
Bias condition D;VEB = 4 V dc
Collector to emitter saturation
voltage
3071
IC = 10 mA dc; IB = 1 mA dc;
pulsed (see 4.5.1)
V(BR)CEO
100
150
See footnotes at end of table.
13
V dc
V dc
10
µA dc
50
50
nA dc
nA dc
IEBO2
25
nA dc
VCE(sat)1
7/
0.2
V dc
MIL-PRF-19500/366J
TABLE I. Group A inspection - Continued.
Inspection
1/ 2/
MIL-STD-750
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 2 - Continued
Collector to emitter saturation
voltage
2N3500, 2N3501, 2N3501UB
only
3071
IC = 150 mA dc; IB = 15 mA dc;
pulsed (see 4.5.1)
Collector to emitter saturation
voltage
2N3498, 2N3499 only
3071
Base emitter saturation voltage
3066
Test condition A; IC = 10 mA dc;
IB = 1 mA dc; pulsed (see 4.5.1)
Base emitter saturation voltage
(2N3500, 2N3501, 2N3501UB
only)
3066
Base emitter saturation voltage
(2N3498, 2N3499 only)
Forward-current transfer ratio
VCE(sat)2
7/
0.4
V dc
0.6
V dc
VBE(sat)1
7/
0.8
V dc
Test condition A; IC = 150 mA dc;
IB = 15 mA dc; pulsed (see 4.5.1)
VBE(sat)2
7/
1.2
V dc
3066
Test condition A; IC = 300 mA dc;
IB = 30 mA dc; pulsed (see 4.5.1)
VBE(sat)3
7/
1.4
V dc
3076
VCE = 10 V dc; IC = 0.1 mA dc;
pulsed (see 4.5.1)
IC = 300 mA dc; IB = 30 mA dc;
pulsed (see 4.5.1)
VCE(sat)3
7/
hFE1
2N3498, 2N3500
2N3499, 2N3501, 2N3501UB
Forward-current transfer ratio
20
35
3076
VCE = 10 V dc; IC = 1.0 mA dc;
pulsed (see 4.5.1)
hFE2
2N3498, 2N3500
2N3499, 2N3501, 2N3501UB
Forward-current transfer ratio
25
50
3076
VCE = 10 V dc; IC = 10 mA dc;
pulsed (see 4.5.1)
hFE3
2N3498, 2N3500
2N3499, 2N3501, 2N3501UB
Forward-current transfer ratio
35
75
3076
VCE = 10 V dc; IC = 150 mA dc;
pulsed (see 4.5.1)
2N3498, 2N3500
2N3499, 2N3501, 2N3501UB
hFE4
40
100
See footnotes at end of table.
14
120
300
MIL-PRF-19500/366J
TABLE I. Group A inspection - Continued.
1/ 2/
Inspection
MIL-STD-750
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 3
Forward-current transfer ratio
3076
VCE = 10 V dc; IC = 300 mA dc;
pulsed (see 4.5.1)
hFE5
2N3500
2N3501, 2N3501UB
Forward-current transfer ratio
15
20
3076
VCE = 10 V dc; IC = 500 mA dc;
pulsed (see 4.5.1)
hFE6
2N3498
2N3499
15
20
High temperature operation
Collector to base cutoff current
2N3498, 2N3499
2N3500, 2N3501, 2N3501UB
TA = +150°C
3036
Low temperature operation
Forward-current transfer ratio
2N3498, 2N3500
2N3499, 2N3501, 2N3501UB
Bias condition D
VCB = 50 V dc
VCB = 75 V dc
ICBO3
50
µA dc
TA = -55°C
3076
VCE = 10 V dc; IC = 150 mA dc
hFE7
22
45
Subgroup 4
Magnitude of small-signal
short- circuit forward current
transfer ratio
3306
VCE = 20 V dc; IC = 20 mA dc;
f = 100 MHz
| hfe |
Small-signal short-circuit
forward current transfer ratio
2N3498, 2N3500
2N3499, 2N3501, 2N3501UB
3206
VCE = 10 V dc; IC = 10 mA dc;
f = 1 kHz
hfe
Open circuit output capacitance
3236
VCB = 10 V dc; IE = 0;
100 kHz ≤ f ≤ 1 MHz
1.5
8
35
75
300
375
Cobo
2N3498, 2N3499
2N3500, 2N3501, 2N3501UB
10
8
pF
pF
Input capacitance (output opencircuited)
3240
VEB = 0.5 V dc; IC = 0;
100 kHz ≤ f ≤ 1 MHz
Cibo
80
pF
Noise figure
(Test 1)
3246
VCE = 10 V dc; IC = 0.5 mA dc;
Rg = 1 kΩ; f = 1 kHz
NF
16
dB
See footnotes at end of table.
15
MIL-PRF-19500/366J
TABLE I. Group A inspection - Continued.
1/ 2/
Inspection
MIL-STD-750
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 5
VCE = 10 V dc; IC = 0.5 mA dc;
Rg = 1 kΩ; f = 10 kHz
NF
6
dB
Turn-on time
VEB = 5 V dc; IC = 150 mA dc;
IB1 = 15 mA dc; (see figure 5)
ton
115
ns
Turn-off time
IC = 150 mA dc, IB1 = IB2 = 15 mA
dc; (see figure 5)
toff
1150
ns
Noise figure
(Test 2)
Safe operating area
(continuous dc)
3246
3051
TC = 25°C; tr ≥ 10 ns; 1 cycle;
(see figure 6); t = 1 s
Test 1
2N3498, 3N3499
2N3500, 3N3501
3N3501UB
VCE = 10 V dc; IC = 500 mA dc
VCE = 16.67 V dc; IC = 300 mA dc
VCE = 10 V dc; IC = 113 mA dc
Test 2
2N3498, 2N3499, 2N3500,
2N3501
2N3501UB
VCE = 50 V dc; IC = 100 mA dc
VCE = 50 V dc; IC = 23 mA dc
Test 3
2N3498, 2N3499, 2N3500,
2N3501
2N3501UB
Safe operating area
(clamped switching)
2N3498, 2N3499
2N3500, 2N3501, 2N3501UB
Electrical measurements
VCE = 80 V dc; IC = 40 mA dc
VCE = 80 V dc; IC = 14 mA dc
3053
TA = +25°C; (see figure 7); device
fails if clamp voltage is not
reached
IB = 85 mA dc; IC = 500 mA dc
IB = 50 mA dc; IC = 300 mA dc
See table I, group A, subgroup 2
herein.
Subgroup 6
Not required
1/
2/
3/
4/
5/
6/
7/
For sampling plan see MIL-PRF-19500, unless otherwise specified.
Electrical characteristics for "L" suffix devices are identical to the corresponding "non-L" suffix devices.
For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure
in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon
submission.
Separate samples may be used.
Not required for JANS devices.
Not required for laser marked devices.
Maximum limit for this test characterized at ≤ .125 inch (3.18 mm) from the case.
16
MIL-PRF-19500/366J
TABLE II. Groups B and C delta measurements. 1/ 2/ 3/
Step
1.
MIL-STD-750
Inspection 4/
Collector to base
cutoff current
Method
3036
2N3498, 2N3499
2N3500, 2N3501
1/
2/
3/
4/
5/
6/
7/
Conditions
Bias condition D;
Symbol
∆ICBO2
5/
Limit
Unit
Min
Max
± 100 percent of initial
value or 10 nA dc,
whichever is greater.
VCB = 50 V dc
VCB = 75 V dc
2.
Forward-current
transfer ratio
3076
VCE = 10 V dc; IC = 10 mA dc
pulsed (see 4.5.1)
∆hFE3 5/
6/
± 25 percent change from
initial reading
3.
Forward-current
transfer ratio
3076
VCE = 10 V dc; IC = 150 mA dc
pulsed (see 4.5.1)
∆hFE4 5/
± 25 percent change from
initial reading
4.
Collector to emitter
voltage (saturated)
3071
IC = 10 mA dc;
IB = 1.0 mA dc
pulsed (see 4.5.1)
∆VCE(sat)1
5/ 6/ 7/
± 50 mV dc change from
previous measured value
The delta measurements for table VIa (JANS) of MIL-PRF-19500 are as follows:
a. Subgroup 4, see table II herein, steps 3 and 4.
b. Subgroup 5, see table II herein, steps 1 and 2.
The delta measurements for group B, (see 4.4.2.2 herein, JAN, JANTX, and JANTXV) are as follows: After
each step in 4.4.2.2, see table II herein, steps 1 and 3.
The delta measurements for table VII of MIL-PRF-19500 are as follows: Subgroup 6, see table II herein, step 1
(for JANS only).
Electrical characteristics for "L" and "UB" suffix devices are identical to their corresponding "non-L" and "nonUB" suffix devices unless otherwise noted.
Devices which exceed the group A limits shall not be returned to the lot, but will not be considered
failures.
JANS only.
Maximum limit for this test characterized at ≤ .125 inch (3.18 mm) from the case.
17
MIL-PRF-19500/366J
TABLE III. Group E inspection (all quality levels) - for qualification only.
Inspection
MIL-STD-750
Method
Qualification
Conditions
Subgroup 1
45 devices
c=0
Temperature cycling
(air to air)
1051
Hermetic seal
1071
Test condition C, 500 cycles
Fine leak
Gross leak
Electrical measurements
See group A, subgroup 2 herein.
Subgroup 2
Intermittent life
45 devices
c=0
1037
Intermittent operation life: VCB = 10 V dc , 6,000
cycles.
See group A, subgroup 2 herein.
Electrical measurements
Subgroup 3, 4, 5, 6, and 7
Not applicable
* Subgroup 8
Reverse stability
1033
Condition A for devices ≥ 400 V dc.
Condition B for devices < 400 V dc.
18
45 devices
c=0
MIL-PRF-19500/366J
<
NOTES:
1. The input waveform is supplied by a pulse generator with the following characteristics:
pulse width = 20 µs, pulse repetition rate = 1 kHz, rise time ( tr ) and fall time (tf ) ≤ 10 ns, duty cycle ≤ 2
percent.
2. The output waveform is monitored on a sampling oscilloscope with Zin ≥ 1 ms and tr ≤ 1 ns.
FIGURE 5. Turn-on turn-off switching time test circuit.
19
MIL-PRF-19500/366J
FIGURE 6. Maximum safe operating area.
20
MIL-PRF-19500/366J
Voltage clamp:
2N3498, 2N3498L, 2N3499, 2N3499L = 100 V dc
2N3500, 2N3500L, 2N3501, 2N3501L, 2N3501UB = 150 V dc
RS ≤ 1.0 ohm (noninductive)
L = (STANCOR C-2688, 0.425 ohm, or equivalent)
Procedure:
1. With switch S1 closed, set the specified test conditions.
2. Open S1.
3. Perform specified end-point tests.
FIGURE 7. Clamped inductive sweep test circuit diagram.
21
MIL-PRF-19500/366J
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to
contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements
are maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency,
or within the Military Department's System Command. Packaging data retrieval is available from the managing
Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the
responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
* 6.2 Acquisition requirements. Acquisition documents must specify the following:
a. Title, number, and date of this specification.
b. Issue of DoDISS to be cited in the solicitation, and if required, the specific issue of individual documents
referenced (see 2.2.1).
c. Packaging requirements (see 5.1).
d. Lead finish (see 3.4.1).
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000.
6.4 Substitutability. The 2N3498, 2N3499 and 2N3500 devices (including "L" suffix versions) are now inactive for
new design. The 2N3501 is the preferred item and is a direct substitute for the 2N3499, however, due to the higher
gain of the 2N3501, it should be evaluated on a case by case basis before it is substituted for the 2N3498 and
2N3500.
22
MIL-PRF-19500/366J
6.5 Suppliers of JANHC and JANKC die. The qualified JANC suppliers with the applicable letter version (example
JANHCA2N3500) will be identified on the QML.
JANC ordering information
Manufacturer
PIN
2N3498
2N3499
2N3500
2N3501
43611
34156
JANHCA2N3498
JANKCA2N3498
JANHCA2N3499
JANKCA2N3499
JANHCA2N3500
JANKCA2N3500
JANHCA2N3501
JANKCA2N3501
JANHCB2N3498
JANKCB2N3498
JANHCB2N3499
JANKCB2N3499
JANHCB2N3500
JANKCB2N3500
JANHCB2N3501
JANKCB2N3501
6.6 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
Custodians:
Army - CR
Navy - EC
Air Force - 11
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2581)
Review activities:
Army - AR, MI, SM
Navy - AS, MC
Air Force - 19
23
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on
current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced
document(s) or to amend contractual requirements.
1. DOCUMENT NUMBER
2. DOCUMENT DATE
I RECOMMEND A CHANGE:
MIL-PRF-19500/366J
4 June 2002
3. DOCUMENT TITLE
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, AMPLIFIER TYPES 2N3498, 2N3498L, 2N3499, 2N3499L,
2N3500, 2N3500L, 2N3501, 2N3501L, AND 2N3501UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC.
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
c. ADDRESS (Include Zip Code)
b. ORGANIZATION
d. TELEPHONE (Include Area Code)
COMMERCIAL
DSN
FAX
EMAIL
7. DATE SUBMITTED
8. PREPARING ACTIVITY
a. Point of Contact
Alan Barone
c. ADDRESS
Defense Supply Center Columbus,
ATTN: DSCC-VAC, P.O. Box 3990,
Columbus, OH 43216-5000
DD Form 1426, Feb 1999 (EG)
b. TELEPHONE
Commercial
DSN
FAX
EMAIL
614-692-0510
850-0510
614-692-6939
[email protected]
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221
Telephone (703) 767-6888 DSN 427-6888
Previous editions are obsolete
WHS/DIOR, Feb 99