The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 June 2002. INCH-POUND MIL-PRF-19500/253H 25 March 2002 SUPERSEDING MIL-PRF-19500/253G 23 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N930 AND 2N930UB JAN, JANTX, JANTXV, JANS, JANHC AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN silicon, low-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. 1.2 Physical dimensions. See figure 1 (TO-18), figure 2 (UB, surface mount), and figures 3 and 4 (die). * 1.3 Maximum ratings. Unless otherwise specified, TC = +25°C. PT (1) TA = +25°C VCBO VCEO VEBO IC TJ and TSTG RθJC RθJA mW V dc V dc V dc mA dc °C °C/W °C/W 360 60 45 6 30 -65 to +200 97 485 (1) Derate linearly at 2.06 mW/°C above TA = +25°C. 1.4 Primary electrical characteristics. Limits hFE1 (1) hFE2 (1) Cobo |hfe| VBE(SAT) (1) VCE(SAT) (1) VCE = 5 V dc IC = 10 µA dc VCE = 5 V dc IC = 500 µA dc VCB = 5 V dc IE = 0 100 kHz ≤ f ≤ 1 MHz VCE = 5 V dc IC = 500 µA dc f = 30 MHz IC = 10 mA dc IB = 0.5 mA dc IC = 10 mA dc IB = 0.5 mA dc V dc V dc 0.6 1.0 1.0 pF Min Max 100 300 150 8.0 1.5 6.0 (1) Pulsed (see 4.5.1). Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC, Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/253H 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figure 1 (T0-18), figure 2 (UB, surface mount) and figures 3 and 4 (die). 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Marking. Devices shall be marked in accordance with MIL-PRF-19500. 2 MIL-PRF-19500/253H Symbol CD CH HD LC LD LL LU L1 L2 P Q TL TW r α Dimensions Inches Millimeters Min Max Min Max .178 .195 4.52 4.95 .170 .210 4.32 5.33 .209 .230 5.31 5.84 .100 TP 2.54 TP .016 .021 0.41 0.53 .500 .750 12.70 19.05 .016 .019 0.41 0.48 .050 1.27 .250 6.35 .100 2.54 .030 0.76 .028 .048 0.71 1.22 .036 .046 0.91 1.17 .010 0.25 45° TP 45° TP Note 6 7,8 7,8 7,8 7,8 7,8 5 3,4 3 10 6 NOTES: 1. Dimension are in inches. 2. Metric equivalents are given for general information only. 3. Beyond r (radius) maximum, TL shall be held for a minimum length of .011 inch (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. The collector shall be internally connected to the case. 10. Dimension r (radius) applies to both inside corners of tab. 11. In accordance with ANSI Y14.5M, diameters are equivalent to φx symbology. 12. Lead 1 = emitter, lead 2 = base, lead 3 = collector. FIGURE 1. Physical dimensions (similar to TO-18). 3 MIL-PRF-19500/253H Symbol A A1 B1 B2 B3 D D1 D2 D3 E E3 L1 L2 Dimensions Inches Millimeters Min Max Min Max .046 .056 0.97 1.42 .017 .035 0.43 0.89 .016 .024 0.41 0.61 .016 .024 0.41 0.61 .016 .024 0.41 0.61 .085 .108 2.41 2.74 .071 .079 1.81 2.01 .035 .039 0.89 0.99 .085 .108 2.41 2.74 .115 .128 2.82 3.25 .128 3.25 .022 .038 0.56 0.96 .022 .038 0.56 0.96 Note NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. FIGURE 2. Physical dimensions, surface mount (UB version). 4 MIL-PRF-19500/253H A- version NOTES: 1. Chip size .............................................. 15 x 19 mils ±1 mil. 2. Chip thickness...................................... 10 ±1.5 mil. 3. Top metal ............................................. Aluminum 15,000Å minimum, 18,000Å nominal. 4. Back metal ........................................... A. Gold 2,500Å minimum, 3,000Å nominal. B. Eutectic Mount – No Gold. 5. Backside............................................... Collector. 6. Bonding pad ......................................... B = 3 mils, E = 4 mils diameter. 7. Passivation........................................... Si3N4 (Silicon Nitride) 2 kÅ min, 2.2 kÅ nom. FIGURE 3. Physical dimensions, JANHCA die. 5 MIL-PRF-19500/253H B-version Die size: Die thickness: Base pad: Emitter pad: Back metal: Top metal: Back side: Glassivation: .018 x .018 inch (0.4572 x 0.4572 mm). .008 ±.0016 inch (0.2032 ±0.04064 mm). .0025 inch (0.0635 mm) diameter. .003 inch (0.0762 mm) diameter. Gold, 6,500 ±1,950 Å. Aluminum, 19,500 ±2,500 Å. Collector. SiO2, 7,500 ±1,500 Å. FIGURE 4. Physical dimensions, JANHCB and JANKCB die. 6 MIL-PRF-19500/253H 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be group A as specified herein. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4, and tables I, II, and III). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. * 4.2.1 Group E qualification. Group E qualification shall be performed herein for qualification or requalification only. In case qualification was awarded to a prior revision of the associated specification that did not request the performance of table II tests, the tests specified in table II herein shall be performed by the first inspection lot to this revision to maintain qualification. * 4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see tableIV of MIL-PRF-19500) Measurement JANS levels Measurement JANTX and JANTXV levels 3c Thermal impedance, method 3131 of MIL-STD-750. Thermal impedance, method 3131 of MIL-STD-750. 9 ICBO2, hFE2 Not applicable 10 48 hours minimum 48 hours minimum 11 ICBO2, hFE2 ∆ICBO2 = 100 percent of initial value or 5 nA dc, whichever is greater; ∆hFE2 = ± 25 percent. See 4.3.1, 240 hours minimum Subgroups 2 and 3 of table I herein; ∆ICBO2 = 100 percent of initial value or 5 nA dc, whichever is greater; ∆hFE2 = ± 25 percent. ICBO2, hFE2 12 13 See 4.3.1, 80 hours minimum Subgroup 2 of table I herein; ∆ICBO2 = 100 percent of initial value or 5 nA dc, whichever is greater; ∆hFE2 = ± 25 percent. * 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc; apply PT = 360 mW dc. NOTE: No heat sink or forced air cooling on the devices shall be permitted. 4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. 7 MIL-PRF-19500/253H 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of group A1 and A2 inspections only (table VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2). 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1. Electrical measurements (endpoints) and delta requirements shall be in accordance with group A, subgroup 2 and table III herein: delta requirements only apply to subgroups B4, and B5. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) and delta requirements for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with group A, subgroup 2 and table III herein. * 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 VCB = 10 V dc. B5 1027 VCB = 10 V dc; PD ≥ 100 percent of maximum rated PT (see 1.3). (NOTE: If a failure occurs, resubmission shall be at the test conditions of the original sample.) Option 1: 96 hours min, sample size in accordance with table VIa of MIL-PRF-19500, adjust PD or TA to achieve TJ = +275°C minimum. Option 2: 216 hours min., sample size = 45, c = 0; adjust PD or TA to achieve TJ = +225°C minimum. 4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot shall be scrapped. Step Method 1 1039 Steady-state life: Test condition B, 340 hours, VCB = 10 - 30 V dc, power shall be applied to achieve TJ = +150°C minimum using a minimum power dissipation, PD = 75 percent of PT maximum rated as defined in 1.3 herein. No heat sink or forced-air cooling on the devices shall be permitted. n = 45 devices, c = 0. 2 1039 The steady-state life test of step 1 shall be extended to 1,000 hours for each die design. Samples shall be selected from a wafer lot every twelve months of wafer production. Group B, step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0. Condition 8 MIL-PRF-19500/253H 4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV, samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot. See MIL-PRF-19500. b. Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2 conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups B4 and B5 for JANS and group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. 4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and JANTXV) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in accordance with group A, subgroup 2 and table III herein; delta requirements only apply to subgroup C6. 4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition E (not applicable for UB devices). C6 1026 1,000 hours at VCB = 10 V dc; power shall be applied to achieve TJ = +150°C minimum using a minimum of PD = 75 percent of maximum rated PT as defined in 1.3. 4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition E (not applicable for UB devices). C5 3131 See 4.5.2. C6 Not applicable. 4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any inspection lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes group A tests for conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. * 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified herein. Electrical measurements (endpoints) shall be in accordance with table I, subgroup 2 herein. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 9 MIL-PRF-19500/253H 4.5.2 Thermal resistance. Thermal resistance measurements shall be performed in accordance with method 3131 of MIL-STD-750 (for qualification only). The following details shall apply: a. Collector current magnitude during power applications shall be 28 mA dc minimum. b. Collector to emitter voltage magnitude ≥ 20 V dc. c. Reference temperature measuring point shall be the case. d. Reference point temperature shall be +25°C ≤ TR ≤ +75°C and recorded before the test is started. e. Mounting arrangement shall be with heat sink to case. f. Maximum limit shall be RθJC = 97°C/W. 10 MIL-PRF-19500/253H TABLE I. Group A inspection. Inspection MIL-STD-750 1/ Limit Unit Symbol Method Conditions Min Max Subgroup 1 2/ Visual and mechanical examination 3/ 2071 n = 45 devices, c = 0 Solderability 3/ 4/ 2026 n = 15 leads, c = 0 Resistance to solvents 3/ 4/ 5/ 1022 n = 15 devices, c = 0 Temperature cycling 3/ 4/ 1051 Test condition C, 25 cycles. n = 22 devices, c = 0 Hermetic seal 4/ Fine leak Gross leak 1071 n = 22 devices, c = 0 Group A, subgroup 2 Electrical measurements Bond strength 3/ 4/ 2037 Precondition TA = +250°C at t = 24 hrs or TA = 300°C at t = 2 hrs n = 11 wires, c = 0 Decap internal visual (design verification) 4/ 2075 n = 4 device, c = 0 Collector to base cutoff current 3036 Bias condition D, VCB = 60 V dc ICBO1 10 µA dc Emitter to base cutoff current 3061 Bias condition D, VEB = 6 V dc IEBO1 10 µA dc Breakdown voltage, collector to emitter 3011 Bias condition D; IC = 10 mA dc; pulsed (see 4.5.1) Collector to emitter cutoff current 3041 Bias condition C; VCE = 45 V dc ICES1 2.0 nA dc Collector to emitter cutoff current 3041 Bias condition C; VCE = 5 V dc ICEO 2.0 nA dc Emitter to base cutoff current 3061 Bias condition D; VEB = 5 V dc IEBO2 5 nA dc Subgroup 2 See footnotes at end of table. 11 V(BR)CEO 45 V dc MIL-PRF-19500/253H TABLE I. Group A inspection – Continued. Inspection MIL-STD-750 1/ Limit Unit Symbol Method Conditions Min Max Subgroup 2 - continued. Collector to base cutoff current 3036 Bias condition D; VCB = 45 V dc ICBO2 Forward-current transfer ratio 3076 VCE = 5 V dc; IC = 10 µA dc Pulsed (see 4.5.1) hFE1 100 Forward-current transfer ratio 3076 VCE = 5 V dc; IC = 500 µA dc Pulsed (see 4.5.1) hFE2 150 Forward-current transfer ratio 3076 VCE = 5 V dc; IC = 10 mA dc hFE3 600 Collector-emitter saturation voltage 3071 IC = 10 mA dc; IB = 0.5 mA dc pulsed (see 4.5.1) VCE(sat) 1.0 V dc Base-emitter saturation voltage 3066 Test condition A; IC = 10 mA dc; IB = 0.5 mA dc; pulsed (see 4.5.1) VBE(sat) 1.0 V dc 10 µA dc 10 0.6 nA dc 300 Subgroup 3 High temperature operation Collector to base cutoff current TA = +150°C 3036 Low temperature operation Bias condition C;VCE = 45 V dc pulsed (see 4.5.1) ICES2 TA = -55°C 3076 VCE = 5 V dc; IC = 10 µA dc hFE4 20 Small-signal short-circuit forward current transfer ratio 3206 VCE = 5 V dc; IC = 1 mA dc; f = 1 kHz hfe 150 600 Magnitude of small-signal short- circuit forward current transfer ratio 3306 VCE = 5 V dc; IC = 500 µA dc; f = 30 MHz | hfe | 1.5 6.0 Open circuit output capacitance 3236 VCB = 5 V dc; IE = 0; 100 kHz ≤ f ≤ 1 MHz Cobo Forward-current transfer ratio Subgroup 4 See footnotes at end of table. 12 8 pF MIL-PRF-19500/253H TABLE I. Group A inspection – Continued. Inspection MIL-STD-750 1/ Limit Unit Symbol Method Conditions Min Max Subgroup 4 - continued. Noise figure 3246 Test 1 Test 2 Test 3 VCE = 5 V dc; IC = 10 µA dc; Rg = 10 kΩ NF f = 100Hz f = 1 kHz f = 10 kHz Small-signal open-circuit output admittance 3216 VCB = 5 V dc; IE = 1.0 mA dc; f = 1 kHz hoe Small-signal open-circuit reverse voltage transfer ratio 3211 VCB = 5 V dc; IE = 1.0 mA dc; f = 1 kHz hre Small-signal short-circuit input impedance 3201 VCB = 5 V dc; IE = 1.0 mA dc; f = 1 kHz hie 0 5 3 3 dB dB dB 1.0 mhos -4 6 x 10 25 32 Ω Subgroups 5 and 6 Not applicable 1/ 2/ 3/ 4/ 5/ For sampling plan, unless otherwise specified, see MIL-PRF-19500. For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon submission. Separate samples may be used. Not required for JANS devices. Not required for laser marked devices. 13 MIL-PRF-19500/253H TABLE II. Group E inspection (all quality levels) – for qualification only. * Inspection MIL-STD-750 Method Qualification Conditions Subgroup 1 45 devices c=0 Temperature cycling (air to air) 1051 Hermetic seal 1071 Test condition C, 500 cycles Fine leak Gross leak Electrical measurements See group A, subgroup 2 and table III herein. 45 devices c=0 Subgroup 2 Intermittent life 1037 Electrical measurements VCB = 10 V dc, 6,000 cycles. See group A, subgroup 2 and table III herein. Subgroup 3 Not applicable Subgroups 4, 5, 6 and 7 Not applicable Subgroup 8 Reverse stability 1033 Condition A for devices ≥ 400 V. Condition B for devices < 400 V. 14 45 devices c=0 MIL-PRF-19500/253H TABLE III. Groups B, C, and E delta measurements. * Step Inspection MIL-STD-750 Method Symbol Limit Unit Conditions 1 Collector-base cutoff current 3036 Bias condition D, VCB = 45 V dc ∆ICB02 1/ 100 percent of initial value or 5 nA dc, whichever is greater. 2 Forward current transfer ratio 3076 VCE = 5 V dc; IC = 500 µA dc; pulsed see 4.5.1. ∆hFE2 1/ ±25 percent change from initial reading. 1/ Devices which exceed the group A limits for this test shall not be accepted. 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency, or within the Military Department's System Command. Packaging data retrieval is available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Title, number, and date of this specification. b. Issue of DoDISS to be cited in the solicitation and if required, the specific issue of individual documents referenced (see 2.2.1). c. The lead finish as specified (see 3.4.1). d. Type designation and quality assurance level. e. Packaging requirements (see 5.1). 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC-VQE, P.O. Box 3990, Columbus, OH 43216-5000. 15 MIL-PRF-19500/253H 6.4 Suppliers of JANHC die. The qualified JANHC and JANKC suppliers with the applicable letter version (example JANHCA2N930) will be identified on the QML. JANC ordering information PIN 2N930 Manufacturer 43611 34156 JANHCA2N930 JANHCB2N930 JANKCB2N930 6.5 Changes from previous issue. The margins of this revision are marked with an asterisk to indicate where changes from the previous issue were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue. Custodians: Army - CR Navy - EC Air Force - 11 NASA - NA DLA - CC Preparing activities: DLA – CC (Project 5961-2506) Review activities: Army - AR, AV, MI, SM Navy - AS Air Force – 71, 99 16 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 0/429 2. DOCUMENT DATE 25 March 2002 1. DOCUMENT NUMBER MIL-PRF-19500/253H 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N930 AND 2N930UB JAN, JANTX, JANTXV, JANS, JANHC AND JANKC 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) c. ADDRESS (Include Zip Code) b. ORGANIZATION d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL 7. DATE SUBMITTED 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center, Columbus ATTN: DSCC-VAC, P.O. Box 3990 Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN FAX EMAIL 614-692-0510 850-0510 614-692-6939 [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99