DDR SDRAM stacked 512Mb E-die (x4/x8)
DDR SDRAM
Stacked 512Mb E-die DDR SDRAM Specification
(x4/x8)
Revision 1.0
Rev. 1.0 July. 2003
DDR SDRAM stacked 512Mb E-die (x4/x8)
DDR SDRAM
st. 512Mb E-die Revision History
Revision 1.0 (July, 2003)
- First version release.
Rev. 1.0 July. 2003
DDR SDRAM stacked 512Mb E-die (x4/x8)
DDR SDRAM
Key Features
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe DQS
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency 2, 2.5 (clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• DM for write masking only (x4, x8)
• Auto & Self refresh
• 7.8us refresh interval(8K/64ms refresh)
• Maximum burst refresh cycle : 8
• 66pin TSOP II package
Ordering Information
Part No.
Org.
K4H510638E-TC/LAA
K4H510638E-TC/LA2
Max Freq.
A2(DDR266@CL=2)
B0(DDR266@CL=2.5)
K4H510738E-TC/LAA
AA(DDR266@CL=2)
K4H510738E-TC/LB0
Package
SSTL2
66pin TSOP II
SSTL2
66pin TSOP II
AA(DDR266@CL=2)
st.128M x 4
K4H510638E-TC/LB0
K4H510738E-TC/LA2
Interface
st.64M x 8
A2(DDR266@CL=2)
B0(DDR266@CL=2.5)
Operating Frequencies
AA(DDR266@CL=2.0)
A2(DDR266@CL=2.0)
B0(DDR266@CL=2.5)
Speed @CL2
133MHz
133MHz
100MHz
Speed @CL2.5
133MHz
133MHz
133MHz
CL-tRCD-tRP
2-2-2
2-3-3
2.5-3-3
*CL : CAS Latency
Rev. 1.0 July. 2003
DDR SDRAM stacked 512Mb E-die (x4/x8)
DDR SDRAM
Pin Description
st.64Mb x 8
st.128Mb x 4
VDD
VDD
1
66
VSS
VSS
DQ0
NC
2
65
NC
DQ7
VDDQ
VDDQ
3
64
VSSQ
VSSQ
NC
NC
4
63
NC
NC
DQ1
DQ0
5
62
DQ3
DQ6
VSSQ
VSSQ
6
61
VDDQ
VDDQ
NC
NC
7
60
NC
NC
DQ2
NC
8
59
NC
DQ5
VDDQ
VDDQ
9
58
VSSQ
VSSQ
NC
NC
10
57
NC
NC
DQ3
DQ1
11
56
DQ2
DQ4
VSSQ
VSSQ
12
55
VDDQ
VDDQ
NC
NC
13
54
NC
NC
NC
NC
14
53
NC
NC
VDDQ
VDDQ
15
52
VSSQ
VSSQ
NC
NC
16
51
DQS
DQS
NC
NC
17
50
NC
NC
VDD
VDD
18
49
VREF
VREF
NC
NC
19
48
VSS
VSS
NC
NC
20
47
DM
DM
WE
WE
21
46
CK
CK
CAS
CAS
22
45
CK
CK
RAS
RAS
23
44
CKE0
CKE0
CS0
CS0
24
43
CKE1
CKE1
CS1
CS1
25
42
A12
A12
BA0
BA0
26
41
A11
A11
A9
A9
66Pin TSOPII
(400mil x 875mil)
(0.65mm Pin Pitch)
Bank Address
BA0~BA1
Auto Precharge
A10
BA1
BA1
27
40
AP/A10
AP/A10
28
39
A8
A8
A0
A0
29
38
A7
A7
A1
A1
30
37
A6
A6
A2
A2
31
36
A5
A5
A4
A4
VSS
VSS
A3
A3
32
35
VDD
VDD
33
34
stacked 512Mb TSOP-II Package Pinout
Organization
Row Address
Column Address
st.128Mx4
A0~A12
A0-A9, A11
st.64Mx8
A0~A12
A0-A9
DM is internally loaded to match DQ and DQS identically.
Row & Column address configuration
Rev. 1.0 July. 2003
DDR SDRAM stacked 512Mb E-die (x4/x8)
DDR SDRAM
Package Physical Dimension
#33
0.45~0.75
#1
Units : Millimeters
10.16
(0.50)
#34
11.76±0.20
#66
+0.075
0.65
0.25 ± 0.08
(0.71)
(R
0 .2
0.45~0.75
5)
(4×
)
2.54(max)
(R
0.
25
)
0.125 - 0.035
22.62MAX
22.22 ± 0.10
0.05(min)
0.25TYP
0×~8×
NOTE
1. (
) IS REFERENCE
2. [
] IS ASS’Y OUT QUALITY
66pin TSOPII / Package dimension
Block Diagram
CK,CK,CAS
RAS,WE,DM
CK,CK,CAS
RAS,WE,DM
64Mx4
CKE1,CS1
32Mx8
CKE1,CS1
64Mx4
32Mx8
CKE0,CS0
CKE0,CS0
I/O0-I/O3,DQS
st.128Mb x 4
A0-A12,BA0,BA1
I/O 0 ~ I/O 3, DQSA0-A12, BA0,BA1
st.64Mb x 8
Rev. 1.0 July. 2003
DDR SDRAM stacked 512Mb E-die (x4/x8)
DDR SDRAM
Input/Output Function Description
SYMBOL
TYPE
DESCRIPTION
Input
Clock : CK and CK are differential clock inputs. All address and control input signals are sampled on the positive edge of CK and negative edge of CK. Output (read) data is referenced to
both edges of CK. Internal clock signals are derived from CK/CK.
CKE
Input
Clock Enable : CKE HIGH activates, and CKE LOW deactivates internal clock signals, and
device input buffers and output drivers. Deactivating the clock provides PRECHARGE
POWER-DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER-DOWN
(row ACTIVE in any bank). CKE is synchronous for all functions except for disabling outputs,
which is achieved asynchronously. Input buffers, excluding CK, CK and CKE are disabled during power-down and self refresh modes, providing low standby power. CKE will recognize an
LVCMOS LOW level prior to VREF being stable on power-up.
CS
Input
Chip Select : CS enables(registered LOW) and disables(registered HIGH) the command
decoder. All commands are masked when CS is registered HIGH. CS provides for external
bank selection on systems with multiple banks. CS is considered part of the command code.
RAS, CAS, WE
Input
Command Inputs : RAS, CAS and WE (along with CS) define the command being entered.
DM
Input
Input Data Mask : DM is an input mask signal for write data. Input data is masked when DM is
sampled HIGH along with that input data during a WRITE access. DM is sampled on both
edges of DQS. Although DM pins are input only, the DM loading matches the DQ and DQS
loading.
BA0, BA1
Input
Bank Addres Inputs : BA0 and BA1 define to which bank an ACTIVE, READ, WRITE or PRECHARGE command is being applied.
A [0 : 12]
Input
Address Inputs : Provide the row address for ACTIVE commands, and the column address and
AUTO PRECHARGE bit for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 is sampled during a PRECHARGE command to determine whether the PRECHARGE applies to one bank (A10 LOW) or all banks (A10 HIGH). If
only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also
provide the op-code during a MODE REGISTER SET command. BA0 and BA1 define which
mode register is loaded during the MODE REGISTER SET command (MRS or EMRS).
DQ
I/O
Data Input/Output : Data bus
DQS
I/O
Data Strobe : Output with read data, input with write data. Edge-aligned with read data, centered in write data. Used to capture write data.
NC
-
VDDQ
Supply
DQ Power Supply : +2.5V ± 0.2V.
VSSQ
Supply
DQ Ground.
VDD
Supply
Power Supply : +2.5V ± 0.2V (device specific).
VSS
Supply
Ground.
VREF
Input
CK, CK
No Connect : No internal electrical connection is present.
SSTL_2 reference voltage.
Rev. 1.0 July. 2003
DDR SDRAM stacked 512Mb E-die (x4/x8)
DDR SDRAM
Command Truth Table
(V=Valid, X=Don′t Care, H=Logic High, L=Logic Low)
COMMAND
CKEn-1 CKEn
CS
RAS
CAS
WE
BA0,1 A10/AP
A0 ~ A9,
A11,A12
Note
Register
Extended MRS
H
X
L
L
L
L
OP CODE
1, 2
Register
Mode Register Set
H
X
L
L
L
L
OP CODE
1, 2
L
L
L
H
X
L
H
H
H
H
X
X
X
Auto Refresh
Refresh
Entry
Self
Refresh
Exit
H
H
L
L
H
Bank Active & Row Addr.
H
X
L
L
H
H
V
Read &
Column Address
Auto Precharge Disable
H
X
L
H
L
H
V
Write &
Column Address
Auto Precharge Disable
Auto Precharge Enable
Auto Precharge Enable
Burst Stop
Precharge
Bank Selection
X
L
H
L
L
H
X
L
H
H
L
H
All Banks
Active Power Down
H
X
Entry
H
L
Exit
L
H
Entry
H
L
Precharge Power Down Mode
Exit
DM(UDM/LDM for x16 only)
No operation (NOP) : Not defined
L
H
L
L
H
L
H
X
X
X
L
V
V
V
X
X
X
X
H
X
X
X
L
H
H
H
H
X
X
X
L
V
V
V
H
X
X
X
L
H
H
H
H
H
X
X
3
3
3
X
V
3
Row Address
L
Column
Address
H
L
Column
Address
H
X
V
L
X
H
4
4
4
4, 6
7
X
5
X
X
X
X
8
9
9
Note :1. OP Code : Operand Code. A0 ~ A12 & BA0 ~ BA1 : Program keys. (@EMRS/MRS)
2. EMRS/MRS can be issued only at all banks precharge state.
A new command can be issued 2 clock cycles after EMRS or MRS.
3. Auto refresh functions are same as the CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
4. BA0 ~ BA1 : Bank select addresses.
If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected.
If BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank B is selected.
If BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank C is selected.
If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected.
5. If A10/AP is "High" at row precharge, BA0 and BA1 are ignored and all banks are selected.
6. During burst write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.
7. Burst stop command is valid at every burst length.
8. DM(x4x8) sampled at the rising and falling edges of the DQS and Data-in are masked at the both edges (Write DM latency is 0).
9. This combination is not defined for any function, which means "No Operation(NOP)" in DDR SDRAM.
Rev. 1.0 July. 2003
DDR SDRAM stacked 512Mb E-die (x4/x8)
DDR SDRAM
st. 32M x 4Bit x 4 Banks / st. 16M x 8Bit x 4 Banks Double Data Rate SDRAM
General Description
The K4H510638E / K4H510738E is 536,870,912 bits of double data rate synchronous DRAM organized as 4x 33,553,332 / 4x
16,777,216 words by 4/ 8bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe
allow extremely high performance up to 266Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.
Absolute Maximum Rating
Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VIN, VOUT
-0.5 ~ 3.6
V
Voltage on VDD & VDDQ supply relative to VSS
VDD, VDDQ
-1.0 ~ 3.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1.5
W
Short circuit current
IOS
50
mA
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC Operating Conditions
Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 70°C)
Parameter
Supply voltage(for device with a nominal VDD of 2.5V)
Symbol
Min
Max
VDD
2.3
2.7
Unit
Note
I/O Supply voltage
VDDQ
2.3
2.7
V
I/O Reference voltage
VREF
0.49*VDDQ
0.51*VDDQ
V
1
2
I/O Termination voltage(system)
Input logic high voltage
VTT
VREF-0.04
VREF+0.04
V
VIH(DC)
VREF+0.15
VDDQ+0.3
V
Input logic low voltage
VIL(DC)
-0.3
VREF-0.15
V
Input Voltage Level, CK and CK inputs
VIN(DC)
-0.3
VDDQ+0.3
V
Input Differential Voltage, CK and CK inputs
VID(DC)
0.36
VDDQ+0.6
V
3
V-I Matching: Pullup to Pulldown Current Ratio
VI(Ratio)
0.71
1.4
-
4
II
-2
2
uA
5
Input leakage current
Output leakage current
IOZ
-5
Output High Current(Normal strengh driver) ;VOUT = VTT + 0.84V
IOH
-16.8
mA
uA
Output High Current(Normal strengh driver) ;VOUT = VTT - 0.84V
IOL
16.8
mA
Output High Current(Half strengh driver) ;VOUT = VTT + 0.45V
IOH
-9
mA
Output High Current(Half strengh driver) ;VOUT = VTT - 0.45V
IOL
9
mA
Note : 1.VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of same.
Peak-to peak noise on VREF may not exceed +/-2% of the dc value.
2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to
VREF, and must track variations in the DC level of VREF
3. VID is the magnitude of the difference between the input level on CK and the input level on CK.
4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire
temperature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the
maximum difference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the
maximum to minimum pullup and pulldown current will not exceed 1/7 for device drain to source voltages from 0.1 to 1.0.
Rev. 1.0 July. 2003
DDR SDRAM stacked 512Mb E-die (x4/x8)
DDR SDRAM
DDR SDRAM Spec Items & Test Conditions
Conditions
Symbol
Operating current - One bank Active-Precharge;
tRC=tRCmin; tCK=10ns for DDR200, 7.5ns for DDR266, 6ns for DDR333;
DQ,DM and DQS inputs changing once per clock cycle;
address and control inputs changing once every two clock cycles.
IDD0
Operating current - One bank operation ; One bank open, BL=4, Reads
- Refer to the following page for detailed test condition
IDD1
Percharge power-down standby current; All banks idle; power - down mode;
CKE = <VIL(max); tCK=10ns for DDR200,7.5ns for DDR266, 6ns for DDR333; Vin = Vref for DQ,DQS and DM.
IDD2P
Precharge Floating standby current; CS# > =VIH(min);All banks idle; CKE > = VIH(min); tCK=10ns for DDR200,
7.5ns for DDR266, 6ns for DDR333; Address and other control inputs changing once per clock cycle;
Vin = Vref for DQ,DQS and DM
IDD2F
Precharge Quiet standby current; CS# > = VIH(min); All banks idle;
CKE > = VIH(min); tCK=10ns for DDR200, 7.5ns for DDR266, 6ns for DDR333; Address and other control inputs
stable at >= VIH(min) or =<VIL(max); Vin = Vref for DQ ,DQS and DM
IDD2Q
Active power - down standby current ; one bank active; power-down mode;
CKE=< VIL (max); tCK=10ns for DDR200, 7.5ns for DDR266, 6ns for DDR333; Vin = Vref for DQ,DQS and DM
IDD3P
Active standby current; CS# >= VIH(min); CKE>=VIH(min);
one bank active; active - precharge; tRC=tRASmax; tCK=10ns for DDR200, 7.5ns for DDR266, 6ns for DDR333;
DQ, DQS and DM inputs changing twice per clock cycle; address and other control inputs changing once per clock
cycle
IDD3N
Operating current - burst read; Burst length = 2; reads; continguous burst; One bank active; address and control
inputs changing once per clock cycle; CL=2 at tCK=10ns for DDR200, CL=2 at 7.5ns for DDR266(A2), CL=2.5 at
7.5ns for DDR266(B0), 6ns for DDR333; 50% of data changing on every transfer; lout = 0 m A
IDD4R
Operating current - burst write; Burst length = 2; writes; continuous burst;
One bank active address and control inputs changing once per clock cycle; CL=2 at tCK= 10ns for DDR200, CL=2
at tCK=7.5ns for DDR266(A2), CL=2.5 at tCK=7.5ns for DDR266(B0), 6ns for DDR333; DQ, DM and DQS inputs
changing twice per clock cycle, 50% of input data changing at every burst
IDD4W
Auto refresh current; tRC = tRFC(min) - 8*tCK for DDR200 at tCK=10ns; 10*tCK for DDR266 at tCK=7.5ns;
12*tCK for DDR333 at tCK=6ns; distributed refresh
IDD5
Self refresh current; CKE =< 0.2V; External clock on; tCK = 10ns for DDR200, tCK=7.5ns for DDR266, 6ns for
DDR333.
IDD6
Orerating current - Four bank operation ; Four bank interleaving with BL=4
-Refer to the following page for detailed test condition
IDD7A
Input/Output Capacitance
(VDD=2.5, VDDQ=2.5V, TA= 25°C, f=1MHz)
Symbol
Min
Max
Delta
Unit
Note
Input capacitance
(A0 ~ A12, BA0 ~ BA1, CKE0,CKE1, CS0, CS1 ,
RAS,CAS, WE)
CIN1
2
3
0.5
pF
4
Input capacitance( CK, CK )
CIN2
2
3
0.25
pF
4
Data & DQS input/output capacitance
COUT
4
5
pF
1,2,3,4
Input capacitance(DM for x4/8,)
CIN3
4
5
pF
1,2,3,4
Parameter
0.5
Note : 1.These values are guaranteed by design and are tested on a sample basis only.
2. Although DM is an input -only pin, the input capacitance of this pin must model the input capacitance of the DQ and DQS pins.
This is required to match signal propagation times of DQ, DQS, and DM in the system.
3. Unused pins are tied to ground.
4. This parameteer is sampled. VDDQ = +2.5V +0.2V, VDD = +3.3V +0.3V or +0.25V+0.2V, f=100MHz, tA=25°C, Vout(dc) =
VDDQ/2, Vout(peak to peak) = 0.2V. DM inputs are grouped with I/O pins - reflecting the fact that they are matched in loading
(to facilitate trace matching at the board level).
Rev. 1.0 July. 2003
DDR SDRAM stacked 512Mb E-die (x4/x8)
DDR SDRAM
< Detailed test conditions for DDR SDRAM IDD1 & IDD7A >
IDD1 : Operating current: One bank operation
1. Only one bank is accessed with tRC(min), Burst Mode, Address and Control inputs on NOP edge are changing once
per clock cycle. lout = 0mA
2. Timing patterns
- B0(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 6*tCK
Read : A0 N N R0 N N P0 N N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst
- A2 (133Mhz, CL=2) : tCK = 7.5ns, CL=2, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 6*tCK
Read : A0 N N R0 N N P0 N N A0 N - repeat the same timing with random address changing
*50% of data changing at every burst
- AA(133Mhz, CL=2) : tCK = 7.5ns, CL2=2, BL=4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge
Read : A0 N A1 R0 A2 R1 A3 R2 A0 R3 A1 R0 - repeat the same timing with random address changing
*100% of data changing at every burst
Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP
IDD7A : Operating current: Four bank operation
1. Typical Case : Vdd = 2.5V, T=25’ C
2. Worst Case : Vdd = 2.7V, T= 10’ C
3. Four banks are being interleaved with tRC(min), Burst Mode, Address and Control inputs on NOP edge are not
changing. lout = 0mA
4. Timing patterns
- B0(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge
Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing
*100% of data changing at every burst
- A2(133Mhz, CL=2) : tCK = 7.5ns, CL2=2, BL=4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge
Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing
*100% of data changing at every burst
- AA(133Mhz, CL=2) : tCK = 7.5ns, CL2=2, BL=4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge
Read : A0 N A1 R0 A2 R1 A3 R2 A0 R3 A1 R0 - repeat the same timing with random address changing
*100% of data changing at every burst
Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP
Rev. 1.0 July. 2003
DDR SDRAM stacked 512Mb E-die (x4/x8)
DDR SDRAM
DDR SDRAM IDD spec table
(VDD=2.7V, T = 10°C)
Symbol
IDD6
Unit
AA(DDR266@CL=2.0)
A2(DDR266@CL=2.0)
B0(DDR266@CL=2.5)
IDD0
100
100
100
mA
IDD1
120
120
120
mA
IDD2P
6
6
6
mA
IDD2F
40
40
40
mA
IDD2Q
36
36
36
mA
IDD3P
35
35
35
mA
IDD3N
65
65
65
mA
mA
IDD4R
165
165
165
IDD4W
140
140
140
mA
IDD5
180
180
180
mA
Normal
6
6
6
mA
Low power
3
3
3
mA
290
290
290
mA
IDD7A
Symbol
IDD6
st 128Mx4 (K4H510638E)
st 64Mx8 (K4H510738E)
Unit
AA(DDR266@CL=2.0)
A2(DDR266@CL=2.0)
B0(DDR266@CL=2.5)
IDD0
100
100
100
mA
mA
IDD1
120
120
120
IDD2P
6
6
6
mA
IDD2F
40
40
40
mA
IDD2Q
36
36
36
mA
IDD3P
35
35
35
mA
IDD3N
65
65
65
mA
mA
IDD4R
165
165
165
IDD4W
140
140
140
mA
IDD5
180
180
180
mA
Normal
6
6
6
mA
Low power
3
3
3
mA
290
290
290
mA
IDD7A
Notes
Optional
Notes
Optional
Rev. 1.0 July. 2003
DDR SDRAM stacked 512Mb E-die (x4/x8)
DDR SDRAM
AC Operating Conditions
Symbol
Min
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Parameter/Condition
VIH(AC)
VREF + 0.31
Max-10
Unit
Note
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
VIL(AC)
Input Differential Voltage, CK and /CK inputs
VID(AC)
0.7
VDDQ+0.6
V
1
Input Crossing Point Voltage, CK and /CK inputs
VIX(AC)
0.5*VDDQ-0.2
0.5*VDDQ+0.2
V
2
V
VREF - 0.31
V
Notes :
1. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same.
AC Overshoot/Undershoot specification for Address and Control Pins
Parameter
Specification
DDR333
DDR200/266
Maximum peak amplitude allowed for overshoot
TBD
1.5 V
Maximum peak amplitude allowed for undershoot
TBD
1.5 V
The area between the overshoot signal and VDD must be less than or equal to
TBD
4.5 V-ns
The area between the undershoot signal and GND must be less than or equal to
TBD
4.5 V-ns
VDD
Overshoot
5
Maximum Amplitude = 1.5V
4
3
Volts (V)
2
Area = 4.5V-ns
1
0
-1
-2
-3
Maximum Amplitude = 1.5V
GND
-4
-5
0
0.6875
1.5
2.5
3.5
4.5
5.5
6.3125
7.0
0.5
1.0
2.0
3.0
4.0
5.0
6.0
6.5
Tims(ns)
undershoot
AC overshoot/Undershoot Definition
Rev. 1.0 July. 2003
DDR SDRAM stacked 512Mb E-die (x4/x8)
DDR SDRAM
Overshoot/Undershoot specification for Data, Strobe, and Mask Pins
Specification
Parameter
DDR200/266
Maximum peak amplitude allowed for overshoot
1.2 V
Maximum peak amplitude allowed for undershoot
1.2 V
The area between the overshoot signal and VDD must be less than or equal to
2.4 V-ns
The area between the undershoot signal and GND must be less than or equal to
2.4 V-ns
VDDQ
Overshoot
5
Maximum Amplitude = 1.2V
4
3
Volts (V)
2
1
Area = 2.4V-ns
0
-1
-2
-3
Maximum Amplitude = 1.2V
GND
-4
-5
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
Tims(ns)
undershoot
DQ/DM/DQS AC overshoot/Undershoot Definition
Rev. 1.0 July. 2003
DDR SDRAM stacked 512Mb E-die (x4/x8)
DDR SDRAM
AC Timming Parameters & Specifications
Symbol
Parameter
AA
(DDR266@CL=2.0)
Min
Row cycle time
Refresh row cycle time
Max
A2
(DDR266@CL=2.0)
Min
Max
B0
(DDR266@CL=2.5))
Min
Unit
tRC
60
65
65
ns
tRFC
75
75
75
ns
Row active time
tRAS
45
RAS to CAS delay
tRCD
15
20
20
tRP
15
20
20
ns
tRRD
15
15
15
ns
Row precharge time
Row active to Row active delay
Write recovery time
120K
45
120K
45
120K
ns
ns
tWR
15
15
15
ns
Last data in to Read command
tWTR
1
1
1
tCK
Col. address to Col. address delay
tCCD
1
1
1
tCK
Clock cycle time
CL=2.0
CL=2.5
tCK
7.5
12
7.5
12
10
12
ns
7.5
12
7.5
12
7.5
12
ns
Clock high level width
tCH
0.45
0.55
0.45
0.55
0.45
0.55
tCK
Clock low level width
tCL
0.45
0.55
0.45
0.55
0.45
0.55
tCK
DQS-out access time from CK/CK
tDQSCK
-0.75
+0.75
-0.75
+0.75
-0.75
+0.75
ns
Output data access time from CK/CK
tAC
-0.75
+0.75
-0.75
+0.75
-0.75
+0.75
ns
Data strobe edge to ouput data edge
tDQSQ
-
0.5
-
0.5
-
0.5
ns
Read Preamble
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
tCK
Read Postamble
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
CK to valid DQS-in
tDQSS
0.75
1.25
0.75
1.25
0.75
1.25
tCK
DQS-in setup time
tWPRES
0
0
0
ns
DQS-in hold time
tWPRE
0.25
0.25
0.25
tCK
tDSS
0.2
0.2
0.2
tCK
DQS falling edge to CK rising-setup time
DQS falling edge from CK rising-hold time
Note
Max
12
3
tDSH
0.2
0.2
0.2
tCK
DQS-in high level width
tDQSH
0.35
0.35
0.35
tCK
DQS-in low level width
tDQSL
0.35
0.35
0.35
tDSC
0.9
Address and Control Input setup time(fast)
tIS
0.9
0.9
0.9
ns
i,5.7~9
Address and Control Input hold time(fast)
tIH
0.9
0.9
0.9
ns
i,5.7~9
Address and Control Input setup time(slow)
tIS
1.0
1.0
1.0
ns
i, 6~9
ns
i, 6~9
DQS-in cycle time
1.1
0.9
1.1
tCK
1.1
1.0
tCK
Address and Control Input hold time(slow)
tIH
1.0
Data-out high impedence time from CK/CK
tHZ
-0.75
+0.75
-0.75
+0.75
-0.75
+0.75
ns
1
Data-out low impedence time from CK/CK
tLZ
-0.75
+0.75
-0.75
+0.75
-0.75
+0.75
ns
1
tSLMR
0.67
1.5
0.67
1.5
0.67
1.5
Output Slew Rate Matching Ratio(rise to fall)
1.0
0.9
Rev. 1.0 July. 2003
DDR SDRAM stacked 512Mb E-die (x4/x8)
Symbol
Parameter
AA
(DDR266@CL=2.0)
Min
DDR SDRAM
A2
(DDR266@CL=2.0)
Max
Min
Max
B0
(DDR266@CL=2.5))
Min
Unit
Note
Max
Mode register set cycle time
tMRD
15
15
15
ns
DQ & DM setup time to DQS
tDS
0.5
0.5
0.5
ns
j, k
j, k
DQ & DM hold time to DQS
tDH
0.5
0.5
0.5
ns
Control & Address input pulse width
tIPW
2.2
2.2
2.2
ns
8
tDIPW
1.75
1.75
1.75
ns
8
Power down exit time
tPDEX
7.5
7.5
7.5
ns
Exit self refresh to non-Read command
tXSNR
75
75
75
ns
Exit self refresh to read command
tXSRD
200
200
200
tCK
Refresh interval time
tREFI
7.8
7.8
7.8
us
4
Output DQS valid window
tQH
tHP
-tQHS
-
tHP
-tQHS
-
tHP
-tQHS
-
ns
11
Clock half period
tHP
tCLmin
or tCHmin
-
tCLmin
or tCHmin
-
tCLmin
or tCHmin
-
ns
10, 11
0.75
ns
11
0.6
tCK
2
tCK
13
DQ & DM input pulse width
Data hold skew factor
tQHS
DQS write postamble time
0.75
0.75
tWPST
0.4
tRAP
20
20
20
tDAL
(tWR/tCK)
+
(tRP/tCK)
(tWR/tCK)
+
(tRP/tCK)
(tWR/tCK)
+
(tRP/tCK)
Active to Read with Auto precharge
command
Autoprecharge write recovery +
Precharge time
0.6
0.4
0.6
0.4
System Characteristics for DDR SDRAM
The following specification parameters are required in systems using DDR333, DDR266 & DDR200 devices to ensure
proper system performance. these characteristics are for system simulation purposes and are guaranteed by design.
Table 1 : Input Slew Rate for DQ, DQS, and DM
AC CHARACTERISTICS
DDR333
DDR266
DDR200
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
Units
Notes
DQ/DM/DQS input slew rate measured between
VIH(DC), VIL(DC) and VIL(DC), VIH(DC)
DCSLEW
TBD
TBD
TBD
TBD
0.5
4.0
V/ns
a, m
Table 2 : Input Setup & Hold Time Derating for Slew Rate
Input Slew Rate
tIS
tIH
Units
0.5 V/ns
0
0
ps
Notes
i
0.4 V/ns
+50
0
ps
i
0.3 V/ns
+100
0
ps
i
Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate
Input Slew Rate
tDS
tDH
Units
Notes
0.5 V/ns
0
0
ps
k
0.4 V/ns
+75
+75
ps
k
0.3 V/ns
+150
+150
ps
k
Rev. 1.0 July. 2003
DDR SDRAM stacked 512Mb E-die (x4/x8)
DDR SDRAM
Table 4 : Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate
Delta Slew Rate
tDS
tDH
Units
Notes
+/- 0.0 V/ns
0
0
ps
j
+/- 0.25 V/ns
+50
+50
ps
j
+/- 0.5 V/ns
+100
+100
ps
j
Table 5 : Output Slew Rate Characteristice (X4, X8 Devices only)
Slew Rate Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Notes
Pullup Slew Rate
1.2 ~ 2.5
1.0
4.5
a,c,d,f,g,h
Pulldown slew
1.2 ~ 2.5
1.0
4.5
b,c,d,f,g,h
Table 6 : Output Slew Rate Characteristice (X16 Devices only)
Slew Rate Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Notes
Pullup Slew Rate
1.2 ~ 2.5
0.7
5.0
a,c,d,f,g,h
Pulldown slew
1.2 ~ 2.5
0.7
5.0
b,c,d,f,g,h
Table 7 : Output Slew Rate Matching Ratio Characteristics
AC CHARACTERISTICS
DDR266
DDR200
PARAMETER
MIN
MAX
MIN
MAX
Notes
Output Slew Rate Matching Ratio (Pullup to Pulldown)
TBD
TBD
0.67
1.5
e,m
Rev. 1.0 July. 2003
DDR SDRAM stacked 512Mb E-die (x4/x8)
DDR SDRAM
Component Notes
1. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. these parameters are not referenced to a
specific voltage level but specify when the device output in no longer driving (HZ), or begins driving (LZ).
2. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but sys
tem performance (bus turnaround) will degrade accordingly.
3. The specific requirement is that DQS be valid (HIGH, LOW, or at some point on a valid transition) on or before this CK edge. A
valid transition is defined as monotonic and meeting the input slew rate specifications of the device. when no writes were previ
ously in progress on the bus, DQS will be tran sitioning from High- Z to logic LOW. If a previous write was in progress, DQS could
be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS.
4. A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device.
5. For command/address input slew rate ≥ 1.0 V/ns
6. For command/address input slew rate ≥ 0.5 V/ns and < 1.0 V/ns
7. For CK & CK slew rate ≥ 1.0 V/ns
8. These parameters guarantee device timing, but they are not necessarily tested on each device. They may be guaranteed by
device design or tester correlation.
9. Slew Rate is measured between VOH(ac) and VOL(ac).
10. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this
value can be greater than the minimum specification limits for tCL and tCH).....For example, tCL and tCH are = 50% of the
period, less the half period jitter (tJIT(HP)) of the clock source, and less the half period jitter due to crosstalk (tJIT(crosstalk)) into
the clock traces.
11. tQH = tHP - tQHS, where:
tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS accounts for 1) The
pulse duration distortion of on-chip clock circuits; and 2) The worst case push-out of DQS on one tansition followed by the worst
case pull-in of DQ on the next transition, both of which are, separately, due to data pin skew and output pattern effects, and pchannel to n-channel variation of the output drivers.
12. tDQSQ
Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers for any given cycle.
13. tDAL = (tWR/tCK) + (tRP/tCK)
For each of the terms above, if not already an integer, round to the next highest integer. Example: For DDR266B at CL=2.5 and
tCK=7.5ns tDAL = (15 ns / 7.5 ns) + (20 ns/ 7.5ns) = (2) + (3)
tDAL = 5 clocks
System Notes :
a. Pullup slew rate is characteristized under the test conditions as shown in Figure 1.
Test point
Output
50Ω
VSSQ
Figure 1 : Pullup slew rate test load
Rev. 1.0 July. 2003
DDR SDRAM stacked 512Mb E-die (x4/x8)
DDR SDRAM
b. Pulldown slew rate is measured under the test conditions shown in Figure 2.
VDDQ
50Ω
Output
Test point
Figure 2 : Pulldown slew rate test load
c. Pullup slew rate is measured between (VDDQ/2 - 320 mV +/- 250 mV)
Pulldown slew rate is measured between (VDDQ/2 + 320 mV +/- 250 mV)
Pullup and Pulldown slew rate conditions are to be met for any pattern of data, including all outputs switching and only one output
switching.
Example : For typical slew rate, DQ0 is switching
For minmum slew rate, all DQ bits are switching from either high to low, or low to high.
The remaining DQ bits remain the same as for previous state.
d. Evaluation conditions
Typical : 25 °C (T Ambient), VDDQ = 2.5V, typical process
Minimum : 70 °C (T Ambient), VDDQ = 2.3V, slow - slow process
Maximum : 0 °C (T Ambient), VDDQ = 2.7V, fast - fast process
e. The ratio of pullup slew rate to pulldown slew rate is specified for the same temperature and voltage, over the entire temperature and
voltage range. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process variation.
f. Verified under typical conditions for qualification purposes.
g. TSOPII package divices only.
h. Only intended for operation up to 266 Mbps per pin.
i. A derating factor will be used to increase tIS and tIH in the case where the input slew rate is below 0.5V/ns
as shown in Table 2. The Input slew rate is based on the lesser of the slew rates detemined by either VIH(AC) to VIL(AC) or
VIH(DC) to VIL(DC), similarly for rising transitions.
j. A derating factor will be used to increase tDS and tDH in the case where DQ, DM, and DQS slew rates differ, as shown in Tables 3 & 4.
Input slew rate is based on the larger of AC-AC delta rise, fall rate and DC-DC delta rise, Input slew rate is based on the lesser of the
slew rates determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions.
The delta rise/fall rate is calculated as:
{1/(Slew Rate1)} - {1/(Slew Rate2)}
For example : If Slew Rate 1 is 0.5 V/ns and slew Rate 2 is 0.4 V/ns, then the delta rise, fall rate is - 0.5ns/V . Using the table given, this
would result in the need for an increase in tDS and tDH of 100 ps.
k. Table 3 is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns. The I/O slew rate is based on the lesser
on the lesser of the AC - AC slew rate and the DC- DC slew rate. The inut slew rate is based on the lesser of the slew rates deter
mined by either VIH(ac) to VIL(ac) or VIH(DC) to VIL(DC), and similarly for rising transitions.
m. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transi
tions through the DC region must be monotony.
Rev. 1.0 July. 2003
DDR SDRAM stacked 512Mb E-die (x4/x8)
DDR SDRAM
IBIS :I/V Characteristics for Input and Output Buffers
DDR SDRAM Output Driver V-I Characteristics
DDR SDRAM Output driver characteristics are defined for full and half strength operation as selected by the EMRS bit A1.
Figures 3 and 4 show the driver characteristics graphically, and tables 8 and 9 show the same data in tabular format suitable for input
into simulation tools. The driver characteristcs evaluation conditions are:
Typical
Minimum
Maximum
25×C
70×C
0×C
Vdd/Vddq = 2.5V, typical process
Vdd/Vddq = 2.3V, slow-slow process
Vdd/Vddq = 2.7V, fast-fast process
Output Driver Characteristic Curves Notes:
1. The full variation in driver current from minimum to maximum process, temperature and voltage will lie within the outer bounding lines
the of the V-I curve of Figure 3 and 4.
2. It is recommended that the "typical" IBIS V-I curve lie within the inner bounding lines of the V-I curves of Figure 3 and 4.
3. The full variation in the ratio of the "typical" IBIS pullup to "typical" IBIS pulldown current should be unity +/- 10%, for device drain to
source voltages from 0.1 to1.0. This specification is a design objective only. It is not guaranteed.
Iout(mA)
160
Maximum
140
120
Typical High
100
80
Typical Low
60
Minimum
40
20
0
0.0
0.5
1.0
1.5
2.0
Pullup Characteristics for Full Strength Output Driver
0 .0
1 .0
2.5
Vout(V)
2 .0
0
-20
Minumum
Typical Low
Iout(mA)
-40
-60
-80
-100
-120
-140
Typical High
-160
-180
Maximum
-200
-220
Pulldown Characteristics for Full Strength Output Driver
Vout(V)
Figure 3. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
Rev. 1.0 July. 2003
DDR SDRAM stacked 512Mb E-die (x4/x8)
DDR SDRAM
Pulldown Current (mA)
Voltage
(V)
Typical
Typical
Low
High
0.1
6.0
6.8
0.2
12.2
13.5
0.3
18.1
20.1
0.4
24.1
26.6
0.5
29.8
33.0
0.6
34.6
0.7
0.8
pullup Current (mA)
Typical
Typical
Low
High
9.6
-6.1
-7.6
9.2
18.2
-12.2
13.8
26.0
-18.1
18.4
33.9
23.0
41.8
39.1
27.7
39.4
44.2
43.7
49.8
0.9
47.5
1.0
1.1
Minimum
Maximum
Minimum
Maximum
4.6
-4.6
-10.0
-14.5
-9.2
-20.0
-21.2
-13.8
-29.8
-24.0
-27.7
-18.4
-38.8
-29.8
-34.1
-23.0
-46.8
49.4
-34.3
-40.5
-27.7
-54.4
32.2
56.8
-38.1
-46.9
-32.2
-61.8
36.8
63.2
-41.1
-53.1
-36.0
-69.5
55.2
39.6
69.9
-41.8
-59.4
-38.2
-77.3
51.3
60.3
42.6
76.3
-46.0
-65.5
-38.7
-85.2
54.1
65.2
44.8
82.5
-47.8
-71.6
-39.0
-93.0
1.2
56.2
69.9
46.2
88.3
-49.2
-77.6
-39.2
-100.6
1.3
57.9
74.2
47.1
93.8
-50.0
-83.6
-39.4
-108.1
1.4
59.3
78.4
47.4
99.1
-50.5
-89.7
-39.6
-115.5
1.5
60.1
82.3
47.7
103.8
-50.7
-95.5
-39.9
-123.0
1.6
60.5
85.9
48.0
108.4
-51.0
-101.3
-40.1
-130.4
1.7
61.0
89.1
48.4
112.1
-51.1
-107.1
-40.2
-136.7
1.8
61.5
92.2
48.9
115.9
-51.3
-112.4
-40.3
-144.2
1.9
62.0
95.3
49.1
119.6
-51.5
-118.7
-40.4
-150.5
2.0
62.5
97.2
49.4
123.3
-51.6
-124.0
-40.5
-156.9
2.1
62.9
99.1
49.6
126.5
-51.8
-129.3
-40.6
-163.2
2.2
63.3
100.9
49.8
129.5
-52.0
-134.6
-40.7
-169.6
2.3
63.8
101.9
49.9
132.4
-52.2
-139.9
-40.8
-176.0
2.4
64.1
102.8
50.0
135.0
-52.3
-145.2
-40.9
-181.3
2.5
64.6
103.8
50.2
137.3
-52.5
-150.5
-41.0
-187.6
2.6
64.8
104.6
50.4
139.2
-52.7
-155.3
-41.1
-192.9
2.7
65.0
105.4
50.5
140.8
-52.8
-160.1
-41.2
-198.2
Table 8. Full Strength Driver Characteristics
Rev. 1.0 July. 2003
DDR SDRAM stacked 512Mb E-die (x4/x8)
DDR SDRAM
90
Maximum
80
70
Typical High
50
Iout(mA)
Iout(mA)
60
40
Typical Low
Minimum
30
20
10
0
0.0
1.0
2.0
Pullup Characteristics for Weak Output Driver
0.0
1.0
Vout(V)
2.0
0
Iout(mA)
-10
Minumum
Typical Low
-20
-30
-40
-50
-60
Typical High
-70
-80
Maximum
-90
Pulldown Characteristics for Weak Output Driver
Vout(V)
Figure 4. I/V characteristics for input/output buffers:Pull up(above) and pull down(below)
Rev. 1.0 July. 2003
DDR SDRAM stacked 512Mb E-die (x4/x8)
DDR SDRAM
Pulldown Current (mA)
Voltage
(V)
Typical
Typical
Low
High
0.1
3.4
3.8
pullup Current (mA)
Minimum
Maximum
2.6
5.0
Typical
Typical
Low
High
-3.5
-4.3
Minimum
Maximum
-2.6
-5.0
0.2
6.9
7.6
5.2
9.9
-6.9
-8.2
-5.2
-9.9
0.3
10.3
11.4
7.8
14.6
-10.3
-12.0
-7.8
-14.6
0.4
13.6
15.1
10.4
19.2
-13.6
-15.7
-10.4
-19.2
0.5
16.9
18.7
13.0
23.6
-16.9
-19.3
-13.0
-23.6
0.6
19.6
22.1
15.7
28.0
-19.4
-22.9
-15.7
-28.0
0.7
22.3
25.0
18.2
32.2
-21.5
-26.5
-18.2
-32.2
0.8
24.7
28.2
20.8
35.8
-23.3
-30.1
-20.4
-35.8
0.9
26.9
31.3
22.4
39.5
-24.8
-33.6
-21.6
-39.5
1.0
29.0
34.1
24.1
43.2
-26.0
-37.1
-21.9
-43.2
1.1
30.6
36.9
25.4
46.7
-27.1
-40.3
-22.1
-46.7
1.2
31.8
39.5
26.2
50.0
-27.8
-43.1
-22.2
-50.0
1.3
32.8
42.0
26.6
53.1
-28.3
-45.8
-22.3
-53.1
1.4
33.5
44.4
26.8
56.1
-28.6
-48.4
-22.4
-56.1
1.5
34.0
46.6
27.0
58.7
-28.7
-50.7
-22.6
-58.7
1.6
34.3
48.6
27.2
61.4
-28.9
-52.9
-22.7
-61.4
1.7
34.5
50.5
27.4
63.5
-28.9
-55.0
-22.7
-63.5
1.8
34.8
52.2
27.7
65.6
-29.0
-56.8
-22.8
-65.6
1.9
35.1
53.9
27.8
67.7
-29.2
-58.7
-22.9
-67.7
2.0
35.4
55.0
28.0
69.8
-29.2
-60.0
-22.9
-69.8
2.1
35.6
56.1
28.1
71.6
-29.3
-61.2
-23.0
-71.6
2.2
35.8
57.1
28.2
73.3
-29.5
-62.4
-23.0
-73.3
2.3
36.1
57.7
28.3
74.9
-29.5
-63.1
-23.1
-74.9
2.4
36.3
58.2
28.3
76.4
-29.6
-63.8
-23.2
-76.4
2.5
36.5
58.7
28.4
77.7
-29.7
-64.4
-23.2
-77.7
2.6
36.7
59.2
28.5
78.8
-29.8
-65.1
-23.3
-78.8
2.7
36.8
59.6
28.6
79.7
-29.9
-65.8
-23.3
-79.7
Table 9. Weak Driver Characteristics
Rev. 1.0 July. 2003