Photocoupler K4N25G • K4N25H DIMENSION These Photocouplers cosist of a Gallium Arsenide Infrared Emitting (Unit : mm) Diode and a Silicon NPN Phototransistor in a 6-pin package. 7.62 5 6 0.25 FEATURES 6.4 • TTL Compatible Output • Collector-Emitter Voltage : Min.50V • Current Transfer Ratio : Typ.100% (at IF=5mA, VCE=5V) • Electrical Isolation Voltage : AC5000Vrms • UL Recognized File No. E107486 • K4N25G - No Base Connection, K4N25H - With Base Connection 0.25 1 2 3 0 -15 8.9 0.25 Orientation Mark 0.25 PIN NO. AND INIERNAL CONNECION DIAGRAM 4 5 6 3.8 K4N25G 0.51Min. 2.7Min. APPLICATIONS • Interface between two circuits of different potential • Vending Machine, Copiers • Measuring Instrument • Home Appliances MAXIMUM RATINGS Parameter Input 0.5 2.54 0.25 (Ta=25℃ Forward Current Reverse Voltage Peak Forward Current *1 Symbol Rating Unit IF 50 mA VR 5 V IFP 1 A PD 70 mW Collector-Emitter Breakdown Voltage BVCEO 50 V Emitter-Collector Breakdown Voltage BVECO 6 V Collector-Base Breakdown Voltage** BVCBO 80 V Emitter-Base Breakdown Voltage** BVEBO 6 V IC 50 mA PC 150 mW Viso AC5000 Vrms Storage Temperature Tstg -55~+125 ℃ Operating Temperature Topr -30~+100 ℃ Tsol 260 ℃ Ptot 200 mW Power Dissipation Output Collector Current Collector Power Dissipation Input to Output Isolation Voltage Lead Soldering Temperature *2 *3 Total Power Dissipation 0.25 6.4 4 ** Except for K4N25G *1. Input current with 100㎲ pulse width, 1% duty cycle *2. Measured at RH=40~60% for 1min *3. 1/16 inch form case for 10sec 1/3 1.2 ) K4N25H 1 2 3 6 5 4 1 2 3 Photocoupler K4N25G • K4N25H ELECTRO-OPTICAL CHARACTERISTICS Parameter Input Output Symbol (Ta=25℃ , unless otherwise noted) Min. Unit. Typ. Max. Forward Voltage VF IF=10mA - 1.15 1.30 V Reverse Current IR VR=5V - - 10 mA Capacitance CT V=0, f=1MHz - 30 - pF 50 - - V Collector-Emitter Breakdown Voltage BVCEO IC=0.5mA Emitter-Collector Breakdown Voltage BVECO IE=0.1mA 6 - - V Collector-Base Breakdown Voltage ** BVCBO IC=0.1mA 80 - - V Emitter-Base Breakdown Voltage ** BVEBO IE=0.1mA 6 - - V Collector Dark Current ICEO IF=0, VCE=10V - - 100 nA Capacitance CCE VCE=0, f=1MHz - 10 - pF CTR IF=5mA, VCE=5V 50 - 600 % VCE(SAT) Current Transfer Ratio *4 IF=5mA, IC=1mA - - 0.4 V Input-Output Capacitance CIO V=0, f=1MHz - 1 - pF Input-Output Isolation Resistance RIO RH=40~60%, V=500V - 1011 - Ω Collector-Emitter Saturation Voltage Coupled Condition Rise Time tr VCC=10V, RL=100Ω - 3 - ㎲ Fall Time tf IC=2mA - 3 - ㎲ ** Except for K4N25G *4. CTR=(IC/IF) X 100 (%) 2/3 Photocoupler K4N25G • K4N25H Forward Current vs. Ambient Temperature Collector Power Dissipation vs. Ambient Temperature 50 Forward Current vs. Forward Voltage 250 Collector Power Dissipation P C (mW) 200 30 Forward Current I F (mA) Forward Current I F (mA) 140 40 150 20 100 10 0 -20 0 20 40 60 80 100 50 100 Ta=70℃ 80 60 Ta=25℃ 40 T a=-55℃ 20 0 -20 0 0 20 40 60 80 0.4 100 0.8 1.2 1.6 2.0 Ambient Temperature Ta (℃) Ambient Temperature Ta (℃) Forward Voltage VF (V) Collector Current vs. Collector-Emitter Voltage Dark Current vs. Ambient Temperature Collector Current vs. Ambient Temperature 100 1 Collector Current I C (mA) Ta=25℃ 30 Dark Current I CEO (㎂) I F =30mA 40 Collector current I C (mA) 120 I F=20mA I F =10mA 20 P C(MAX.) I F =5mA V CE=24V 0.1 V CE=10V 0.01 I F =20mA 10 I F =10mA I F =5mA 1 I F =1mA 10 I F =1mA 0 2 4 6 8 10 0.001 0 Collector-Emitter voltage VCE (V) 100 Collector Current I C (mA) Response Time t r, t f ( s) VCE=5V I C=2mA T a=25℃ tr 60 80 100 0 -20 tf 1 0 20 40 60 Switching Time Test Circuit R V CC VIN RL T a=25℃ VCC=10V VO 10 1 Test Circuit 0.1 Input 0.01 Output 10% 0.1 0.1 1 Load Resistance R L (㏀) 10 80 Ambient Temperature Ta (℃) Collector Current vs. Forward Current 500 10 40 Ambient Temperature Ta (℃) Response Time vs. Load Resistance 100 20 0.001 0.1 90% 1 10 Forward Current I F (mA) 3/3 100 tr tf Waveform