KODENSHI K4N25G

Photocoupler
K4N25G • K4N25H
DIMENSION
These Photocouplers cosist of a Gallium Arsenide Infrared Emitting
(Unit : mm)
Diode and a Silicon NPN Phototransistor in a 6-pin package.
7.62
5
6
0.25
FEATURES
6.4
• TTL Compatible Output
• Collector-Emitter Voltage : Min.50V
• Current Transfer Ratio : Typ.100% (at IF=5mA, VCE=5V)
• Electrical Isolation Voltage : AC5000Vrms
• UL Recognized File No. E107486
• K4N25G - No Base Connection,
K4N25H - With Base Connection
0.25
1
2
3
0
-15
8.9 0.25
Orientation Mark
0.25
PIN NO. AND INIERNAL
CONNECION DIAGRAM
4
5
6
3.8
K4N25G
0.51Min.
2.7Min.
APPLICATIONS
• Interface between two circuits of different potential
• Vending Machine, Copiers
• Measuring Instrument
• Home Appliances
MAXIMUM RATINGS
Parameter
Input
0.5
2.54
0.25
(Ta=25℃
Forward Current
Reverse Voltage
Peak Forward Current
*1
Symbol
Rating
Unit
IF
50
mA
VR
5
V
IFP
1
A
PD
70
mW
Collector-Emitter Breakdown Voltage
BVCEO
50
V
Emitter-Collector Breakdown Voltage
BVECO
6
V
Collector-Base Breakdown Voltage**
BVCBO
80
V
Emitter-Base Breakdown Voltage**
BVEBO
6
V
IC
50
mA
PC
150
mW
Viso
AC5000
Vrms
Storage Temperature
Tstg
-55~+125
℃
Operating Temperature
Topr
-30~+100
℃
Tsol
260
℃
Ptot
200
mW
Power Dissipation
Output
Collector Current
Collector Power Dissipation
Input to Output Isolation Voltage
Lead Soldering Temperature
*2
*3
Total Power Dissipation
0.25
6.4
4
** Except for K4N25G
*1. Input current with 100㎲ pulse width, 1% duty cycle
*2. Measured at RH=40~60% for 1min
*3. 1/16 inch form case for 10sec
1/3
1.2
)
K4N25H
1
2
3
6
5
4
1
2
3
Photocoupler
K4N25G • K4N25H
ELECTRO-OPTICAL CHARACTERISTICS
Parameter
Input
Output
Symbol
(Ta=25℃ , unless otherwise noted)
Min.
Unit.
Typ.
Max.
Forward Voltage
VF
IF=10mA
-
1.15
1.30
V
Reverse Current
IR
VR=5V
-
-
10
mA
Capacitance
CT
V=0, f=1MHz
-
30
-
pF
50
-
-
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=0.5mA
Emitter-Collector Breakdown Voltage
BVECO
IE=0.1mA
6
-
-
V
Collector-Base Breakdown Voltage **
BVCBO
IC=0.1mA
80
-
-
V
Emitter-Base Breakdown Voltage **
BVEBO
IE=0.1mA
6
-
-
V
Collector Dark Current
ICEO
IF=0, VCE=10V
-
-
100
nA
Capacitance
CCE
VCE=0, f=1MHz
-
10
-
pF
CTR
IF=5mA, VCE=5V
50
-
600
%
VCE(SAT)
Current Transfer Ratio
*4
IF=5mA, IC=1mA
-
-
0.4
V
Input-Output Capacitance
CIO
V=0, f=1MHz
-
1
-
pF
Input-Output Isolation Resistance
RIO
RH=40~60%, V=500V
-
1011
-
Ω
Collector-Emitter Saturation Voltage
Coupled
Condition
Rise Time
tr
VCC=10V, RL=100Ω
-
3
-
㎲
Fall Time
tf
IC=2mA
-
3
-
㎲
** Except for K4N25G
*4. CTR=(IC/IF) X 100 (%)
2/3
Photocoupler
K4N25G • K4N25H
Forward Current vs.
Ambient Temperature
Collector Power Dissipation vs.
Ambient Temperature
50
Forward Current vs.
Forward Voltage
250
Collector Power Dissipation P C
(mW)
200
30
Forward Current I F (mA)
Forward Current I F (mA)
140
40
150
20
100
10
0
-20
0
20
40
60
80
100
50
100
Ta=70℃
80
60
Ta=25℃
40
T a=-55℃
20
0
-20
0
0
20
40
60
80
0.4
100
0.8
1.2
1.6
2.0
Ambient Temperature Ta (℃)
Ambient Temperature Ta (℃)
Forward Voltage VF (V)
Collector Current vs.
Collector-Emitter Voltage
Dark Current vs.
Ambient Temperature
Collector Current vs.
Ambient Temperature
100
1
Collector Current I C (mA)
Ta=25℃
30
Dark Current I CEO (㎂)
I F =30mA
40
Collector current I C (mA)
120
I F=20mA
I F =10mA
20
P C(MAX.)
I F =5mA
V CE=24V
0.1
V CE=10V
0.01
I F =20mA
10
I F =10mA
I F =5mA
1
I F =1mA
10
I F =1mA
0
2
4
6
8
10
0.001
0
Collector-Emitter voltage VCE (V)
100
Collector Current I C (mA)
Response Time t r, t f ( s)
VCE=5V
I C=2mA
T a=25℃
tr
60
80
100
0
-20
tf
1
0
20
40
60
Switching Time Test Circuit
R
V CC
VIN
RL
T a=25℃
VCC=10V
VO
10
1
Test Circuit
0.1
Input
0.01
Output
10%
0.1
0.1
1
Load Resistance R L (㏀)
10
80
Ambient Temperature Ta (℃)
Collector Current vs.
Forward Current
500
10
40
Ambient Temperature Ta (℃)
Response Time vs.
Load Resistance
100
20
0.001
0.1
90%
1
10
Forward Current I F (mA)
3/3
100
tr
tf
Waveform