Photocoupler K5620 • K5621 DIMENSION These Photocouplers cosist of a Gallium Arsenide Infrared Emitting (Unit : mm) Diode and a Silicon NPN PhotoDarlington transistor in a 6-pin package. FEATURES • Collector-Emitter Voltage : Min.35V • Current Transfer Ratio : Typ.500% (at IF=1mA, VCE=2V) • Electrical Isolation Voltage : AC5000Vrms • UL Recognized File No. E107486 PIN NO. AND INTERNAL CONNECTION DIAGRAM K5620 APPLICATIONS • Interface between two circuits of different potential • Telephone Line Receiver • Automatic Vending Machine • Power Supply Regulators MAXIMUM RATINGS Parameter Reverse Voltage Input *1 Rating Unit IF 60 mA VR 5 V 1 A PD 150 mW TJ 125 Collector-Emitter Breakdown Voltage BVCEO 35 V Emitter-Collector Breakdown Voltage BVECO 6 V Collector-Base Breakdown Voltage** BVCBO 35 V IC 50 mA PC 150 mW Viso AC5000 Vrms Tstg -55~+125 ℃ Topr -30~+100 ℃ Tsol 260 ℃ Ptot 200 mW Power Dissipation Junction Temperature Output Symbol IFP Peak Forward Current Collector Current Collector Power Dissipation Input to Output Isolation Voltage *2 Storage Temperature Operating Temperature Lead Soldering Temperature *3 Total Power Dissipation 5 4 1 2 3 6 5 4 1 2 3 K5621 (Ta=25℃ ) Forward Current 6 ** Except for K5620 *1. Input current with 100㎲ pulse width, 1% duty cycle *2. Measured at RH=40~60% for 1min *3. 1/16 inch form case for 10sec 1/3 Photocoupler K5620 • K5621 ELECTRO-OPTICAL CHARACTERISTICS Parameter Input Output Symbol Forward Voltage VF IF=10mA - 1.15 1.30 V Reverse Current IR VR=5V - - 10 ㎂ Capacitance CT V=0, f=1MHz - 30 - pF Collector-Emitter Breakdown Voltage BVCEO IC=1mA 35 - - V Emitter-Collector Breakdown Voltage BVECO IE=0.1mA 6 - - V Collector-Base Breakdown Voltage ** BVCBO IC=0.1mA 35 - - V Collector Dark Current ICEO IF=0, VCE=10V - - 100 nA Capacitance CCE VCE=0, f=1MHz - 10 - pF CTR IF=1mA, VCE=2V 500 - % VCE(SAT) IF=1mA, IC=2mA - 0.85 1.0 V 1 Current Transfer Ratio *4 Collector-Emitter Saturation Voltage Coupled Condition (Ta=25℃ , unless otherwise noted) Min. Max. Unit. Typ. Input-Output Capacitance CIO V=0, f=1MHz - - pF Input-Output Isolation Resistance RIO RH=40~60%, V=500V - 10 11 - Ω Rise Time tr VCE=10V, RL=100Ω - 100 - ㎲ Fall Time tf IC=2mA - 100 - ㎲ ** Except for K5620 *4. CTR=(IC/IF) X 100 (%) 2/3 Photocoupler K5620 • K5621 Forward Current vs. Ambient Temperature Collector Power Dissipation vs. Ambient Temperature 250 50 40 30 20 10 20 0 40 80 60 100 200 150 100 50 0 -20 Ambient Temperature Ta (℃) 60 I F=2.5mA 30 I F=2mA P C(max.) I F=1.5mA Ta=-55℃ 20 40 60 80 0.4 100 20 I F=1mA 10 I F =0.5mA 2 4 6 8 10 Collector-Emitter Voltage VCE (V) VCE =24V VCE =10V 0.001 0 20 40 VCC RL VO Test Circuit Input Output 10% 90% tr 80 Ambient Temperature Ta (℃) Switching Time Test Circuit R 60 tf Waveform 3/3 1.6 2.0 Collector Current vs. Forward Current 1 0.01 1.2 0.8 Forward Voltage VF(V) 100 0.1 Ta=25℃ 40 ~ Dark Current ICEO (uA ) Collector Current IC (mA) 20 10 I F=3mA VIN Ta=70℃ 80 Dark Current vs. Ambient Temperature Ta =25℃ 0 100 Ambient Temperature Ta (℃) Collector Current vs. Collector-Emitter Voltage 40 120 0 0 Collector Current IC (mA) 0 -20 140 Forward Current IF (mA) Collector Power Dissipation PC (mW) Forward current I F (mA) 60 Forward Current vs. Forward Voltage 60 50 40 30 20 10 0 100 Ta=25℃ V CE =2V 1 3 5 7 9 Forward Current IF (mA) 11