Photocoupler K5630 • K5631 These Photocouplers consist of two Gallium Arsenide Infrared Emitting DIMENSION (Unit : mm) Diodes and a Silicon NPN Phototransistor in a 6-pin package. FEATURES • Switching Time - Type 3㎲ • Collector-Emitter Voltage : Min.35V • Current Transfer Ratio : Typ.10% (at IF= 10mA, VCE=10V) • Electrical Isolation Voltage : AC5000Vrms • Without Base Connection - K5630 • With Base Connection - K5631 • UL Recognized File No. E107486 PIN NO. AND INTERNAL CONNECTION DIAGRAM 6 5 4 K5630 APPLICATIONS • Interface between two circuits of different potential • AC signal input • Telephone set & line interface • I/O compatible with integrated circuits MAXIMUM RATINGS Parameter Input Peak Forward Current *1 Symbol Rating Unit IF ±60 mA IFP ±1 A PD 70 mW Collector-Emitter Breakdown Voltage BVCEO 35 V Emitter-Collector Breakdown Voltage BVECO 6 V Collector-Base Breakdown Voltage** BVCBO 70 V Emitter-Base Breakdown Voltage** BVEBO 6 V IC 50 mA PC 150 mW Viso AC5000 Vrms Storage Temperature Tstg -55~+125 ℃ Operating Temperature Topr -30~+100 ℃ Tsol 260 ℃ Ptot 200 mW Power Dissipation Output Collector Current Collector Power Dissipation Input to Output Isolation Voltage Lead Soldering Temperature *2 *3 Total Power Dissipation 2 3 5 4 1 2 K5631 (Ta=25℃ ) Forward Current 1 6 ** Except for K5630 *1. Input current with 100㎲ pulse width, 1% duty cycle *2. Measured at RH=40~60% for 1min *3. 1/16 inch form case for 10sec 1/3 3 Photocoupler K5630 • K5631 ELECTRO-OPTICAL CHARACTERISTICS Parameter Input Output Symbol VF IF= Capacitance CT V=0, f=1MHz 10mA - 1.15 1.30 V - 30 - pF 35 - - V Collector-Emitter Breakdown Voltage BVCEO IC=1mA Emitter-Collector Breakdown Voltage BVECO IE=0.1mA 6 - - V Collector-Base Breakdown Voltage ** BVCBO IC=0.1mA 70 - - V Emitter-Base Breakdown Voltage ** BVEBO IC=0.1mA 6 - - V Collector Dark Current ICEO IF=0, VCE=10V - - 100 nA Capacitance CCE VCE=0, f=10MHz - 10 - pF CTR IF= 10mA, VCE=10V 50 - 200 % VCE(SAT) Current Transfer Ratio *4 Collector-Emitter Saturation Voltage Coupled Condition Forward Voltage (Ta=25℃ , unless otherwise noted) Min. Max. Unit. Typ. IF= 10mA, IC=0.5mA - - 0.4 V Input-Output Capacitance CIO V=0, f=1MHz - 2 - pF Input-Output Isolation Resistance RIO RH=40~60%, V=500V - 1011 - Ω tr VCE=5V, RL=100 - 3 - ㎲ tf IC=2mA - 3 - ㎲ 0.33 - 3.0 Rise Time Fall Time CTR Symmetry CTR1/CTR2 ** Except for K5630 *4. CTR=(IC/IF) X 100 (%) 2/3 Photocoupler K5630 • K5631 Collector Power Dissipation vs. Ambient Temperature Collector Power Dissipation P C (mW) 40 30 20 10 0 -20 0 20 40 60 100 80 250 100 200 80 150 100 50 0 -20 Ambient Temperature Ta (℃ ) Dark Current I CEO (㎂) Collector Current I C (mA) I F =20mA P C(max.) I F =10mA I F=5mA I F =1mA 0 60 80 2 4 6 8 10 VCE=10V 0 Collector Current I C (mA) tr 20 40 60 80 10 I F=10mA I F=5mA 1 I F =1mA 0 -20 100 0 tf 1 20 40 Switching Time Test Circuit R VIN VCC RL Ta=25℃ VCE=10V VO 10 1 Test Circuit 0.1 Input 0.01 Output 10% 0.1 0.1 1.0 Load Resistance R L (㏀) 2.0 0.001 0.1 80 60 Ambient Temperature T a (℃ ) Collector Current vs. Forward Current 500 VCE=5V I C=2mA Ta=25℃ 100 1.6 I F=20mA Ambient Temperature Ta (℃ ) 100 1.2 Collector Current vs. Ambient Temperature 0.01 0.001 0.8 Forward Voltage VF (V) 0.1 Response Time vs. Load Resistance 10 Ta=-55℃ 0.4 100 100 Collector-Emitter Voltage V CE (V) Response Time tr , t f (μs) 40 20 I F=30mA 10 20 0 0 1 20 Ta=25℃ Dark Current vs. Ambient Temperature Ta=25℃ 30 Ta=70℃ 40 Ambient Temperature Ta (℃ ) Collector Current vs. Collector-Emitter Voltage 40 60 Collector Current I C (mA) Forward Current I F (mA) 50 Forward Current vs. Forward Voltage Forward Current I F (mA) Forward Current vs. Ambient Temperature 1 10 Forward Current I F (mA) 3/3 100 90% tr Waveform tf