OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature 512Mb KFG1216Q2A 1.8V(1.7V~1.95V) Extended 63FBGA(LF)/63FBGA KFG1216D2A 2.65V(2.4V~2.9V) Extended 63FBGA(LF)/63FBGA KFG1216U2A 3.3V(2.7V~3.6V) Industrial 63FBGA(LF)/63FBGA Version: Ver. 1.0 Date: May 17th, 2005 1 PKG OneNAND512(KFG1216x2A-xxB5) 1.0 FLASH MEMORY INTRODUCTION This specification contains information about the Samsung Electronics Company OneNAND™‚ Flash memory product family. Section 1.0 includes a general overview, revision history, and product ordering information. Section 2.0 describes the OneNAND device. Section 3.0 provides information about device operation. Electrical specifications and timing waveforms are in Sections 4.0 though 6.0. Section 7.0 provides additional application and technical notes pertaining to use of the OneNAND. Package dimensions are found in Section 8.0 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. OneNAND™‚ is a trademark of Samsung Electronics Company, Ltd. Other names and brands may be claimed as the property of their rightful owners. Copyright © 2005, Samsung Electronics Company, Ltd 2 OneNAND512(KFG1216x2A-xxB5) 1.1 FLASH MEMORY Revision History Document Title OneNAND Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Nov. 4, 2004 Preliminary 0.1 1. Corrected Errata 2. Revised cache read flow chart 3. Revised standby current 4. Revised spare area description 5. Added CE don’t care state for Asynch Write, Load, Program, and Block Erase timing diagram Dec. 7, 2004 Preliminary 0.2 1. Added Copy Back Operation with Random Data Input 2. Changed tBA from 11ns to 11.5ns 3. Pended Active Erase Current Dec. 24, 2004 Preliminary 0.3 1. Corrected the errata Jan. 13, 2005 2. Revised typical value of ISB from 50uA to 10uA 3. Revised maximum value of ISB from 100uA to 50uA 4. Revised maximum value of tCE, tAA and tACC from 70ns to 76ns 5. Revised Vcc-IO description 6. Revised Spare Area description 7. Added extra information on Controller Status Register 8. Added commands related to Interrupt Status Register bits 9. Revised Write Protection Status on Chapter 3.4.3 10. Revised Copy-Back Program Operation description 11. Added extra information on Multi-Block Erase Operation 12. Disabled FBA restriction in OTP operation 13. Revised Cache Read Flow Chart 14. Revised Reset Parameter descriptions 15. Added RDY information on Warm Reset Timing diagram 16. Added information on Data Protection Timing During Power Down 17. Revised Interrupt pin rise and falling slope graph 18. Added restriction on address register setting on Dual Operations 19. Added restriction on address register setting on Cache Read Operation Preliminary 0.4 1. Corrected the errata 2. Updated DC parameters to RMS values 3. Added Speed Information on Product Number 4. Revised tOEZ description 5. Revised OTP register setting restriction 6. Added Boot Sequence Infrormation on Technical Notes 7. Added Cint Information Preliminary 3 Feb. 25, 2005 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY Revision History Revision No. History 1.0 1. Corrected the errata 2. Added Data Protection flow chart. 3. Removed Cache Read Operation. 4. Added additional information on command register. 5. Revised Interrupt status register information. 6. Added INT pin schematic. 7. Changed tPGM1 to 205 from 320us, tPGM2 to 220 from 350us. 8. Revised AC/DC parameters 9. Revised ECC Bypass Description. 10. Revised Reset Parameters and Timing Diagrams. 4 Draft Date Remark May. 17, 2005 Final OneNAND512(KFG1216x2A-xxB5) 1.2 FLASH MEMORY Flash Product Type Selector Samsung offers a variety of Flash solutions including NAND Flash, OneNAND™ and NOR Flash. Samsung offers Flash products both component and a variety of card formats including RS-MMC, MMC, CompactFlash, and SmartMedia. To determine which Samsung Flash product solution is best for your application, refer the product selector chart. Application Requires Samsung Flash Products NAND OneNAND NOR • Fast Random Read Fast Sequential Read • • Fast Write/Program • • Multi Block Erase • (Max 64 Blocks) • Erase Suspend/Resume • • • (EDC) Copyback • (ECC) Lock/Unlock/Lock-Tight 1.3 • • X ECC External (Hardware/Software) Internal Scalability • • Ordering Information K F G 12 1 6 Q 2 A - x x B 5 Speed 5 : 54MHz 6 : 66MHz Samsung OneNAND Memory Product Line desinator B : Include Bad Block D : Daisy Sample Operating Temperature Range E = Extended Temp. (-30 °C to 85 °C) I = Industrial Temp. (-40 °C to 85 °C) Device Type G : Single Chip Density 12: 512Mb Package D : FBGA(Lead Free) F : FBGA(Leaded) Organization x16 Organization Version 2nd Generation Operating Voltage Range Q : 1.8V(1.7 V to 1.95V) D : 2.65V(2.4V to 2.9V) U : 3.3V(2.7 V to 3.6V) Page Architecture 2 : 2KB Page 5 OneNAND512(KFG1216x2A-xxB5) 1.4 FLASH MEMORY Architectural Benefits OneNAND is a highly integrated non-volatile memory solution based around a NAND Flash memory array. The chip integrates system features including: • A BootRAM and bootloader • Two independent bi-directional 2KB DataRAM buffers • A High-Speed x16 Host Interface • On-chip Error Correction • On-chip NOR interface controller This on-chip integration enables system designers to reduce external system logic and use high-density NAND Flash in applications that would otherwise have to use more NOR components. OneNAND takes advantage of the higher performance NAND program time, low power, and high density and combines it with the synchronous read performance of NOR. The NOR Flash host interface makes OneNAND an ideal solution for applications like G3 Smart Phones, Camera Phones, and mobile applications that have large, advanced multimedia applications and operating systems, but lack a NAND controller. When integrated into a Samsung Multi-Chip-Package with Samsung Mobile DDR SDRAM, designers can complete a high-performance, small footprint solution. The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you. 6 OneNAND512(KFG1216x2A-xxB5) 1.5 FLASH MEMORY Product Features Device Architecture • Design Technology: • Supply Voltage: • Host Interface: • 5KB Internal BufferRAM: • SLC NAND Array: Device Performance • Host Interface Type: • • • • • Programmable Burst Read Latency Multiple Sector Read: Multiple Reset Modes: Multi Block Erase: Low Power Dissipation: 90nm 1.8V (1.7V ~ 1.95V), 2.65V (2.4 ~ 2.9V), 3.3V (2.7 ~3.6V) 16 bit 1KB BootRAM, 4KB DataRAM (2K+64)B Page Size, (128K+4K)B Block Size Synchronous Burst Read - Up to 54MHz clock frequency - Linear Burst 4-, 8-, 16, 32-words with wrap around - Continuous 1K word Sequential Burst Asynchronous Random Read - 76ns access time Asynchronous Random Write Latency 3(up to 40MHz), 4, 5, 6, and 7 Up to 4 sectors using Sector Count Register Cold/Warm/Hot/NAND Flash Resets up to 64 blocks Typical Power, - Standby current : [email protected], [email protected]/3.3V device - Synchronous Burst Read current : [email protected] [email protected]/3.3V device - Load current : 30mA@all device - Program current : [email protected] device [email protected]/3.3V device - Erase current : [email protected] device [email protected]/3.3V device - Multi Block Erase current : [email protected] device [email protected]/3.3V device System Hardware • Voltage detector generating internal reset signal from Vcc • Hardware reset input (/RP) - Write Protection for BootRAM • Data Protection Modes - Write Protection for NAND Flash Array - Write Protection during power-up - Write Protection during power-down • User-controlled One Time Programmable(OTP) area • Internal 2bit EDC / 1bit ECC • Internal Bootloader supports Booting Solution in system • Handshaking Feature • Detailed chip information Packaging - INT pin indicates Ready / Busy - Polling the interrupt register status bit - by ID register 63ball, 9.5mm x 12mm x max 1.0mmt , 0.8mm ball pitch FBGA 7 OneNAND512(KFG1216x2A-xxB5) 1.6 FLASH MEMORY General Overview OneNAND™‚ is a monolithic integrated circuit with a NAND Flash array using a NOR Flash interface. This device includes control logic, a NAND Flash array, and 5KB of internal BufferRAM. The BufferRAM reserves 1KB for boot code buffering (BootRAM) and 4KB for data buffering (DataRAM), split between 2 independent buffers. It has a x16 Host Interface and a random access time speed of ~76ns. The device operates up to a maximum host-driven clock frequency of 54MHz for synchronous reads at Vcc(or Vccq. Refer to chapter 4.2) with minimum 4-clock latency. Below 40MHz it is accessible with minimum 3-clock latency. Appropriate wait cycles are determined by programmable read latency. OneNAND provides for multiple sector read operations by assigning the number of sectors to be read in the sector counter register. The device includes one block-sized OTP (One Time Programmable) area that can be used to increase system security or to provide identification capabilities. 8 OneNAND512(KFG1216x2A-xxB5) 2.0 DEVICE DESCRIPTION 2.1 Detailed Product Description FLASH MEMORY The OneNAND is an advanced generation, high-performance NAND-based Flash memory. It integrates on-chip a single-level-cell (SLC) NAND Flash Array memory with two independent data buffers, boot RAM buffer, a page buffer for the Flash array, and a one-time-programmable block. The combination of these memory areas enable high-speed pipelining of reads from host, BufferRAM, Page Buffer, and NAND Flash Array memory. Clock speeds up to 54MHz with a x16 wide I/O yields a 68MByte/second bandwidth. The OneNAND also includes a Boot RAM and boot loader. This enables the device to efficiently load boot code at device startup from the NAND Array without the need for off-chip boot device. One block of the NAND Array is set aside as an OTP memory area. This area, available to the user, can be configured and locked with secured user information. On-chip controller interfaces enable the device to operate in systems without NAND Host controllers. 9 OneNAND512(KFG1216x2A-xxB5) 2.2 FLASH MEMORY Definitions B (capital letter) Byte, 8bits W (capital letter) Word, 16bits b (lower-case letter) Bit ECC Error Correction Code Calculated ECC ECC that has been calculated during a load or program access Written ECC ECC that has been stored as data in the NAND Flash array or in the BufferRAM BufferRAM On-chip internal buffer consisting of BootRAM and DataRAM BootRAM A 1KB portion of the BufferRAM reserved for Boot Code buffering DataRAM A 4KB portion of the BufferRAM reserved for Data buffering Sector Part of a Page ; 512B for the main data area and 16B for the spare area. It is also the minimum Load/Program/Copy-Back Program unit during a 1~4 sector operation is available. Data unit Possible data unit to be read from memory to BufferRAM or to be programmed to memory. - 528B of which 512B is in main area and 16B in spare area - 1056B of which 1024B is in main area and 32B in spare area - 1584B of which 1536B is in main area and 48B in spare area - 2112B of which 2048B is in main area and 64B in spare area 10 OneNAND512(KFG1216x2A-xxB5) 2.3 FLASH MEMORY Pin Configuration NC NC NC WE RP DQ14 VSS VSS DQ13 DQ12 DQ8 DQ1 OE DQ9 VCC Core DQ7 DQ4 DQ11 DQ10 DQ3 VCC IO DQ15 A12 DQ0 A15 DQ5 DQ6 CLK CE DQ2 NC NC A9 A14 A13 AVD A7 A11 A8 INT A0 A1 NC A10 A6 RDY A4 A5 A2 A3 NC NC NC NC NC NC NC NC NC NC NC NC NC (TOP VIEW, Balls Facing Down) 63ball FBGA OneNAND Chip 63ball, 9.5mm x 12mm x max 1.0mmt , 0.8mm ball pitch FBGA 11 OneNAND512(KFG1216x2A-xxB5) 2.4 FLASH MEMORY Pin Description Pin Name Type Nameand Description Host Interface Address Inputs - Inputs for addresses during read and write operation, which are for addressing BufferRAM & Register. A15~A0 I DQ15~DQ0 I/O Data Inputs/Outputs - Inputs data during program and commands during all operations, outputs data for memory array/ register read cycles. Data pins float to high-impedance when the chip is deselected or outputs are disabled. INT O Interrupt Notifies the Host when a command is completed. It is open drain output with internal resistor(~50kohms). After power-up, it is at hi-z condition. Once IOBE is set to 1, it does not float to hi-z condition even when the chip is deselected or when outputs are disabled. RDY O Ready Indicates data valid in synchronous read modes and is activated while CE is low CLK I Clock CLK synchronizes the device to the system bus frequency in synchronous read mode. The first rising edge of CLK in conjunction with AVD low latches address input. WE I Write Enable WE controls writes to the bufferRAM and registers. Datas are latched on the WE pulse’s rising edge AVD I Address Valid Detect Indicates valid address presence on address inputs. During asynchronous read operation, all addresses are latched on AVD’s rising edge, and during synchronous read operation, all addresses are latched on CLK’s rising edge while AVD is held low for one clock cycle. > Low : for asynchronous mode, indicates valid address ;for burst mode, causes starting address to be latched on rising edge on CLK > High : device ignores address inputs RP I Reset Pin When low, RP resets internal operation of OneNAND. RP status is don’t care during power-up and bootloading. CE I Chip Enable CE-low activates internal control logic, and CE-high deselects the device, places it in standby state, and places DQ in Hi-Z OE I Output Enable OE-low enables the device’s output data buffers during a read cycle. Power Supply VCC-Core / Vcc VCC-IO / Vccq Power for MuxOneNAND Core This is the power supply for OneNAND Core. Power for MuxOneNAND I/O This is the power supply for OneNAND I/O Vcc-IO / Vccq is internally separated from Vcc-Core / Vcc. VSS Ground for OneNAND DNU Do Not Use Leave it disconnected. These pins are used for testing. etc. NC No Connection Lead is not internally connected. NOTE: Do not leave power supply(Vcc-Core/Vcc-IO, VSS) disconnected. 12 OneNAND512(KFG1216x2A-xxB5) 2.5 FLASH MEMORY Block Diagram BufferRAM DQ15~DQ0 A15~A0 Bootloader BootRAM StateMachine CLK DataRAM0 CE WE RP AVD Host Interface OE DataRAM1 NAND Flash Array Error Correction Internal Registers Logic INT RDY 2.6 (Address/Command/Configuration /Status Registers) OTP (One Block) Memory Array Organization The OneNAND architecture integrates several memory areas on a single chip. 2.6.1 Internal (NAND Array) Memory Organization The on-chip internal memory is a single-level-cell (SLC) NAND array used for data storage and code. The internal memory is divided into a main area and a spare area. Main Area The main area is the primary memory array. This main area is divided into Blocks of 64 Pages. Within a Block, each Page is 2KB and is comprised of 4 Sectors. Within a Page, each Sector is 512B and is comprised of 256 Words. Spare Area The spare area is used for invalid block information and ECC storage. Spare area of internal memory is associated with corresponding main area of internal memory. Within a Block, each Page has four 16B Sectors of spare area. Each spare area Sector is 8 words. 13 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY Internal Memory Array Information Area Block Page Sector Main 128KB 2KB 512B Spare 4KB 64B 16B Internal Memory Array Organization Sector Main Area Spare Area 512B 16B Page Main Area 512B Sector0 512B Sector1 Spare Area 512B Sector2 512B Sector3 2KB 16B Sector0 16B Sector1 16B Sector2 16B Sector3 64B Block Main Area Spare Area 2KB Page0 64B Page0 Page 0 2KB Page63 64B Page63 Page 63 128KB 4KB 14 OneNAND512(KFG1216x2A-xxB5) 2.6.2 FLASH MEMORY External (BufferRAM) Memory Organization The on-chip external memory is comprised of 3 buffers used for Boot Code storage and data buffering. The BootRAM is a 1KB buffer that receives Boot Code from the internal memory and makes it available to the host at start up. There are two independent 2KB bi-directional data buffers, DataRAM0 and DataRAM1. These dual buffers enable the host to execute simultaneous Read-While load, and Write-While-program operations after Boot Up. During Boot Up, the BootRam is used by the host to initialize the main memory, and deliver boot code from NAND Flash core to host. Internal (Nand Array) Memory External (BufferRAM) Memory Boot code (1KB) BootRAM (1KB) Host Nand Array DataRAM0 (2KB) DataRAM1 (2KB) OTP Block The external memory is divided into a main area and a spare area. Each buffer is the equivalent size of a Sector. The main area data is 512B. The spare area data is 16B. External Memory Array Information Area BootRAM DataRAM0 DataRAM1 Total Size 1KB+32B 2KB+64B 2KB+64B Number of Sectors 2 4 4 Main 512B 512B 512B Spare 16B 16B 16B Sector 15 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY External Memory Array Organization Main area data (512B) Spare area data (16B) { { BootRAM BootRAM 0 BootRAM 1 DataRAM 0_0 DataRAM0 DataRAM 0_1 DataRAM 0_2 DataRAM 0_3 DataRAM 1_0 DataRAM1 DataRAM 1_1 DataRAM 1_2 DataRAM 1_3 16 Sector: (512 + 16) Byte OneNAND512(KFG1216x2A-xxB5) 2.7 FLASH MEMORY Memory Map The following tables are the memory maps for the OneNAND. 2.7.1 Internal (NAND Array) Memory Organization The following tables show the Internal Memory address map in word order. Block Block Address Page and Sector Address Size Block Block Address Page and Sector Address Size Block0 0000h 0000h~00FFh 128KB Block32 0020h 0000h~00FFh 128KB Block1 0001h 0000h~00FFh 128KB Block33 0021h 0000h~00FFh 128KB Block2 0002h 0000h~00FFh 128KB Block34 0022h 0000h~00FFh 128KB Block3 0003h 0000h~00FFh 128KB Block35 0023h 0000h~00FFh 128KB Block4 0004h 0000h~00FFh 128KB Block36 0024h 0000h~00FFh 128KB Block5 0005h 0000h~00FFh 128KB Block37 0025h 0000h~00FFh 128KB Block6 0006h 0000h~00FFh 128KB Block38 0026h 0000h~00FFh 128KB Block7 0007h 0000h~00FFh 128KB Block39 0027h 0000h~00FFh 128KB Block8 0008h 0000h~00FFh 128KB Block40 0028h 0000h~00FFh 128KB Block9 0009h 0000h~00FFh 128KB Block41 0029h 0000h~00FFh 128KB Block10 000Ah 0000h~00FFh 128KB Block42 002Ah 0000h~00FFh 128KB Block11 000Bh 0000h~00FFh 128KB Block43 002Bh 0000h~00FFh 128KB Block12 000Ch 0000h~00FFh 128KB Block44 002Ch 0000h~00FFh 128KB Block13 000Dh 0000h~00FFh 128KB Block45 002Dh 0000h~00FFh 128KB Block14 000Eh 0000h~00FFh 128KB Block46 002Eh 0000h~00FFh 128KB Block15 000Fh 0000h~00FFh 128KB Block47 002Fh 0000h~00FFh 128KB Block16 0010h 0000h~00FFh 128KB Block48 0030h 0000h~00FFh 128KB Block17 0011h 0000h~00FFh 128KB Block49 0031h 0000h~00FFh 128KB Block18 0012h 0000h~00FFh 128KB Block50 0032h 0000h~00FFh 128KB Block19 0013h 0000h~00FFh 128KB Block51 0033h 0000h~00FFh 128KB Block20 0014h 0000h~00FFh 128KB Block52 0034h 0000h~00FFh 128KB Block21 0015h 0000h~00FFh 128KB Block53 0035h 0000h~00FFh 128KB Block22 0016h 0000h~00FFh 128KB Block54 0036h 0000h~00FFh 128KB Block23 0017h 0000h~00FFh 128KB Block55 0037h 0000h~00FFh 128KB Block24 0018h 0000h~00FFh 128KB Block56 0038h 0000h~00FFh 128KB Block25 0019h 0000h~00FFh 128KB Block57 0039h 0000h~00FFh 128KB Block26 001Ah 0000h~00FFh 128KB Block58 003Ah 0000h~00FFh 128KB Block27 001Bh 0000h~00FFh 128KB Block59 003Bh 0000h~00FFh 128KB Block28 001Ch 0000h~00FFh 128KB Block60 003Ch 0000h~00FFh 128KB Block29 001Dh 0000h~00FFh 128KB Block61 003Dh 0000h~00FFh 128KB Block30 001Eh 0000h~00FFh 128KB Block62 003Eh 0000h~00FFh 128KB Block31 001Fh 0000h~00FFh 128KB Block63 003Fh 0000h~00FFh 128KB 17 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY Block Block Address Page and Sector Address Size Block Block Address Page and Sector Address Size Block64 0040h 0000h~00FFh 128KB Block96 0060h 0000h~00FFh 128KB Block65 0041h 0000h~00FFh 128KB Block97 0061h 0000h~00FFh 128KB Block66 0042h 0000h~00FFh 128KB Block98 0062h 0000h~00FFh 128KB Block67 0043h 0000h~00FFh 128KB Block99 0063h 0000h~00FFh 128KB Block68 0044h 0000h~00FFh 128KB Block100 0064h 0000h~00FFh 128KB Block69 0045h 0000h~00FFh 128KB Block101 0065h 0000h~00FFh 128KB Block70 0046h 0000h~00FFh 128KB Block102 0066h 0000h~00FFh 128KB Block71 0047h 0000h~00FFh 128KB Block103 0067h 0000h~00FFh 128KB Block72 0048h 0000h~00FFh 128KB Block104 0068h 0000h~00FFh 128KB Block73 0049h 0000h~00FFh 128KB Block105 0069h 0000h~00FFh 128KB Block74 004Ah 0000h~00FFh 128KB Block106 006Ah 0000h~00FFh 128KB Block75 004Bh 0000h~00FFh 128KB Block107 006Bh 0000h~00FFh 128KB Block76 004Ch 0000h~00FFh 128KB Block108 006Ch 0000h~00FFh 128KB Block77 004Dh 0000h~00FFh 128KB Block109 006Dh 0000h~00FFh 128KB Block78 004Eh 0000h~00FFh 128KB Block110 006Eh 0000h~00FFh 128KB Block79 004Fh 0000h~00FFh 128KB Block111 006Fh 0000h~00FFh 128KB Block80 0050h 0000h~00FFh 128KB Block112 0070h 0000h~00FFh 128KB Block81 0051h 0000h~00FFh 128KB Block113 0071h 0000h~00FFh 128KB Block82 0052h 0000h~00FFh 128KB Block114 0072h 0000h~00FFh 128KB Block83 0053h 0000h~00FFh 128KB Block115 0073h 0000h~00FFh 128KB Block84 0054h 0000h~00FFh 128KB Block116 0074h 0000h~00FFh 128KB Block85 0055h 0000h~00FFh 128KB Block117 0075h 0000h~00FFh 128KB Block86 0056h 0000h~00FFh 128KB Block118 0076h 0000h~00FFh 128KB Block87 0057h 0000h~00FFh 128KB Block119 0077h 0000h~00FFh 128KB Block88 0058h 0000h~00FFh 128KB Block120 0078h 0000h~00FFh 128KB Block89 0059h 0000h~00FFh 128KB Block121 0079h 0000h~00FFh 128KB Block90 005Ah 0000h~00FFh 128KB Block122 007Ah 0000h~00FFh 128KB Block91 005Bh 0000h~00FFh 128KB Block123 007Bh 0000h~00FFh 128KB Block92 005Ch 0000h~00FFh 128KB Block124 007Ch 0000h~00FFh 128KB Block93 005Dh 0000h~00FFh 128KB Block125 007Dh 0000h~00FFh 128KB Block94 005Eh 0000h~00FFh 128KB Block126 007Eh 0000h~00FFh 128KB Block95 005Fh 0000h~00FFh 128KB Block127 007Fh 0000h~00FFh 128KB 18 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY Block Block Address Page and Sector Address Size Block Block Address Page and Sector Address Size Block128 0080h 0000h~00FFh 128KB Block160 00A0h 0000h~00FFh 128KB Block129 0081h 0000h~00FFh 128KB Block161 00A1h 0000h~00FFh 128KB Block130 0082h 0000h~00FFh 128KB Block162 00A2h 0000h~00FFh 128KB Block131 0083h 0000h~00FFh 128KB Block163 00A3h 0000h~00FFh 128KB Block132 0084h 0000h~00FFh 128KB Block164 00A4h 0000h~00FFh 128KB Block133 0085h 0000h~00FFh 128KB Block165 00A5h 0000h~00FFh 128KB Block134 0086h 0000h~00FFh 128KB Block166 00A6h 0000h~00FFh 128KB Block135 0087h 0000h~00FFh 128KB Block167 00A7h 0000h~00FFh 128KB Block136 0088h 0000h~00FFh 128KB Block168 00A8h 0000h~00FFh 128KB Block137 0089h 0000h~00FFh 128KB Block169 00A9h 0000h~00FFh 128KB Block138 008Ah 0000h~00FFh 128KB Block170 00AAh 0000h~00FFh 128KB Block139 008Bh 0000h~00FFh 128KB Block171 00ABh 0000h~00FFh 128KB Block140 008Ch 0000h~00FFh 128KB Block172 00ACh 0000h~00FFh 128KB Block141 008Dh 0000h~00FFh 128KB Block173 00ADh 0000h~00FFh 128KB Block142 008Eh 0000h~00FFh 128KB Block174 00AEh 0000h~00FFh 128KB Block143 008Fh 0000h~00FFh 128KB Block175 00AFh 0000h~00FFh 128KB Block144 0090h 0000h~00FFh 128KB Block176 00B0h 0000h~00FFh 128KB Block145 0091h 0000h~00FFh 128KB Block177 00B1h 0000h~00FFh 128KB Block146 0092h 0000h~00FFh 128KB Block178 00B2h 0000h~00FFh 128KB Block147 0093h 0000h~00FFh 128KB Block179 00B3h 0000h~00FFh 128KB Block148 0094h 0000h~00FFh 128KB Block180 00B4h 0000h~00FFh 128KB Block149 0095h 0000h~00FFh 128KB Block181 00B5h 0000h~00FFh 128KB Block150 0096h 0000h~00FFh 128KB Block182 00B6h 0000h~00FFh 128KB Block151 0097h 0000h~00FFh 128KB Block183 00B7h 0000h~00FFh 128KB Block152 0098h 0000h~00FFh 128KB Block184 00B8h 0000h~00FFh 128KB Block153 0099h 0000h~00FFh 128KB Block185 00B9h 0000h~00FFh 128KB Block154 009Ah 0000h~00FFh 128KB Block186 00BAh 0000h~00FFh 128KB Block155 009Bh 0000h~00FFh 128KB Block187 00BBh 0000h~00FFh 128KB Block156 009Ch 0000h~00FFh 128KB Block188 00BCh 0000h~00FFh 128KB Block157 009Dh 0000h~00FFh 128KB Block189 00BDh 0000h~00FFh 128KB Block158 009Eh 0000h~00FFh 128KB Block190 00BEh 0000h~00FFh 128KB Block159 009Fh 0000h~00FFh 128KB Block191 00BFh 0000h~00FFh 128KB 19 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY Block Block Address Page and Sector Address Size Block Block Address Page and Sector Address Size Block192 00C0h 0000h~00FFh 128KB Block224 00E0h 0000h~00FFh 128KB Block193 00C1h 0000h~00FFh 128KB Block225 00E1h 0000h~00FFh 128KB Block194 00C2h 0000h~00FFh 128KB Block226 00E2h 0000h~00FFh 128KB Block195 00C3h 0000h~00FFh 128KB Block227 00E3h 0000h~00FFh 128KB Block196 00C4h 0000h~00FFh 128KB Block228 00E4h 0000h~00FFh 128KB Block197 00C5h 0000h~00FFh 128KB Block229 00E5h 0000h~00FFh 128KB Block198 00C6h 0000h~00FFh 128KB Block230 00E6h 0000h~00FFh 128KB Block199 00C7h 0000h~00FFh 128KB Block231 00E7h 0000h~00FFh 128KB Block200 00C8h 0000h~00FFh 128KB Block232 00E8h 0000h~00FFh 128KB Block201 00C9h 0000h~00FFh 128KB Block233 00E9h 0000h~00FFh 128KB Block202 00CAh 0000h~00FFh 128KB Block234 00EAh 0000h~00FFh 128KB Block203 00CBh 0000h~00FFh 128KB Block235 00EBh 0000h~00FFh 128KB Block204 00CCh 0000h~00FFh 128KB Block236 00ECh 0000h~00FFh 128KB Block205 00CDh 0000h~00FFh 128KB Block237 00EDh 0000h~00FFh 128KB Block206 00CEh 0000h~00FFh 128KB Block238 00EEh 0000h~00FFh 128KB Block207 00CFh 0000h~00FFh 128KB Block239 00EFh 0000h~00FFh 128KB Block208 00D0h 0000h~00FFh 128KB Block240 00F0h 0000h~00FFh 128KB Block209 00D1h 0000h~00FFh 128KB Block241 00F1h 0000h~00FFh 128KB Block210 00D2h 0000h~00FFh 128KB Block242 00F2h 0000h~00FFh 128KB Block211 00D3h 0000h~00FFh 128KB Block243 00F3h 0000h~00FFh 128KB Block212 00D4h 0000h~00FFh 128KB Block244 00F4h 0000h~00FFh 128KB Block213 00D5h 0000h~00FFh 128KB Block245 00F5h 0000h~00FFh 128KB Block214 00D6h 0000h~00FFh 128KB Block246 00F6h 0000h~00FFh 128KB Block215 00D7h 0000h~00FFh 128KB Block247 00F7h 0000h~00FFh 128KB Block216 00D8h 0000h~00FFh 128KB Block248 00F8h 0000h~00FFh 128KB Block217 00D9h 0000h~00FFh 128KB Block249 00F9h 0000h~00FFh 128KB Block218 00DAh 0000h~00FFh 128KB Block250 00FAh 0000h~00FFh 128KB Block219 00DBh 0000h~00FFh 128KB Block251 00FBh 0000h~00FFh 128KB Block220 00DCh 0000h~00FFh 128KB Block252 00FCh 0000h~00FFh 128KB Block221 00DDh 0000h~00FFh 128KB Block253 00FDh 0000h~00FFh 128KB Block222 00DEh 0000h~00FFh 128KB Block254 00FEh 0000h~00FFh 128KB Block223 00DFh 0000h~00FFh 128KB Block255 00FFh 0000h~00FFh 128KB 20 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY Block Block Address Page and Sector Address Size Block Block Address Page and Sector Address Size Block256 0100h 0000h~00FFh 128KB Block288 0120h 0000h~00FFh 128KB Block257 0101h 0000h~00FFh 128KB Block289 0121h 0000h~00FFh 128KB Block258 0102h 0000h~00FFh 128KB Block290 0122h 0000h~00FFh 128KB Block259 0103h 0000h~00FFh 128KB Block291 0123h 0000h~00FFh 128KB Block260 0104h 0000h~00FFh 128KB Block292 0124h 0000h~00FFh 128KB Block261 0105h 0000h~00FFh 128KB Block293 0125h 0000h~00FFh 128KB Block262 0106h 0000h~00FFh 128KB Block294 0126h 0000h~00FFh 128KB Block263 0107h 0000h~00FFh 128KB Block295 0127h 0000h~00FFh 128KB Block264 0108h 0000h~00FFh 128KB Block296 0128h 0000h~00FFh 128KB Block265 0109h 0000h~00FFh 128KB Block297 0129h 0000h~00FFh 128KB Block266 010Ah 0000h~00FFh 128KB Block298 012Ah 0000h~00FFh 128KB Block267 010Bh 0000h~00FFh 128KB Block299 012Bh 0000h~00FFh 128KB Block268 010Ch 0000h~00FFh 128KB Block300 012Ch 0000h~00FFh 128KB Block269 010Dh 0000h~00FFh 128KB Block301 012Dh 0000h~00FFh 128KB Block270 010Eh 0000h~00FFh 128KB Block302 012Eh 0000h~00FFh 128KB Block271 010Fh 0000h~00FFh 128KB Block303 012Fh 0000h~00FFh 128KB Block272 0110h 0000h~00FFh 128KB Block304 0130h 0000h~00FFh 128KB Block273 0111h 0000h~00FFh 128KB Block305 0131h 0000h~00FFh 128KB Block274 0112h 0000h~00FFh 128KB Block306 0132h 0000h~00FFh 128KB Block275 0113h 0000h~00FFh 128KB Block307 0133h 0000h~00FFh 128KB Block276 0114h 0000h~00FFh 128KB Block308 0134h 0000h~00FFh 128KB Block277 0115h 0000h~00FFh 128KB Block309 0135h 0000h~00FFh 128KB Block278 0116h 0000h~00FFh 128KB Block310 0136h 0000h~00FFh 128KB Block279 0117h 0000h~00FFh 128KB Block311 0137h 0000h~00FFh 128KB Block280 0118h 0000h~00FFh 128KB Block312 0138h 0000h~00FFh 128KB Block281 0119h 0000h~00FFh 128KB Block313 0139h 0000h~00FFh 128KB Block282 011Ah 0000h~00FFh 128KB Block314 013Ah 0000h~00FFh 128KB Block283 011Bh 0000h~00FFh 128KB Block315 013Bh 0000h~00FFh 128KB Block284 011Ch 0000h~00FFh 128KB Block316 013Ch 0000h~00FFh 128KB Block285 011Dh 0000h~00FFh 128KB Block317 013Dh 0000h~00FFh 128KB Block286 011Eh 0000h~00FFh 128KB Block318 013Eh 0000h~00FFh 128KB Block287 011Fh 0000h~00FFh 128KB Block319 013Fh 0000h~00FFh 128KB 21 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY Block Block Address Page and Sector Address Size Block Block Address Page and Sector Address Size Block320 0140h 0000h~00FFh 128KB Block352 0160h 0000h~00FFh 128KB Block321 0141h 0000h~00FFh 128KB Block353 0161h 0000h~00FFh 128KB Block322 0142h 0000h~00FFh 128KB Block354 0162h 0000h~00FFh 128KB Block323 0143h 0000h~00FFh 128KB Block355 0163h 0000h~00FFh 128KB Block324 0144h 0000h~00FFh 128KB Block356 0164h 0000h~00FFh 128KB Block325 0145h 0000h~00FFh 128KB Block357 0165h 0000h~00FFh 128KB Block326 0146h 0000h~00FFh 128KB Block358 0166h 0000h~00FFh 128KB Block327 0147h 0000h~00FFh 128KB Block359 0167h 0000h~00FFh 128KB Block328 0148h 0000h~00FFh 128KB Block360 0168h 0000h~00FFh 128KB Block329 0149h 0000h~00FFh 128KB Block361 0169h 0000h~00FFh 128KB Block330 014Ah 0000h~00FFh 128KB Block362 016Ah 0000h~00FFh 128KB Block331 014Bh 0000h~00FFh 128KB Block363 016Bh 0000h~00FFh 128KB Block332 014Ch 0000h~00FFh 128KB Block364 016Ch 0000h~00FFh 128KB Block333 014Dh 0000h~00FFh 128KB Block365 016Dh 0000h~00FFh 128KB Block334 014Eh 0000h~00FFh 128KB Block366 016Eh 0000h~00FFh 128KB Block335 014Fh 0000h~00FFh 128KB Block367 016Fh 0000h~00FFh 128KB Block336 0150h 0000h~00FFh 128KB Block368 0170h 0000h~00FFh 128KB Block337 0151h 0000h~00FFh 128KB Block369 0171h 0000h~00FFh 128KB Block338 0152h 0000h~00FFh 128KB Block370 0172h 0000h~00FFh 128KB Block339 0153h 0000h~00FFh 128KB Block371 0173h 0000h~00FFh 128KB Block340 0154h 0000h~00FFh 128KB Block372 0174h 0000h~00FFh 128KB Block341 0155h 0000h~00FFh 128KB Block373 0175h 0000h~00FFh 128KB Block342 0156h 0000h~00FFh 128KB Block374 0176h 0000h~00FFh 128KB Block343 0157h 0000h~00FFh 128KB Block375 0177h 0000h~00FFh 128KB Block344 0158h 0000h~00FFh 128KB Block376 0178h 0000h~00FFh 128KB Block345 0159h 0000h~00FFh 128KB Block377 0179h 0000h~00FFh 128KB Block346 015Ah 0000h~00FFh 128KB Block378 017Ah 0000h~00FFh 128KB Block347 015Bh 0000h~00FFh 128KB Block379 017Bh 0000h~00FFh 128KB Block348 015Ch 0000h~00FFh 128KB Block380 017Ch 0000h~00FFh 128KB Block349 015Dh 0000h~00FFh 128KB Block381 017Dh 0000h~00FFh 128KB Block350 015Eh 0000h~00FFh 128KB Block382 017Eh 0000h~00FFh 128KB Block351 015Fh 0000h~00FFh 128KB Block383 017Fh 0000h~00FFh 128KB 22 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY Block Block Address Page and Sector Address Size Block Block Address Page and Sector Address Size Block384 0180h 0000h~00FFh 128KB Block416 01A0h 0000h~00FFh 128KB Block385 0181h 0000h~00FFh 128KB Block417 01A1h 0000h~00FFh 128KB Block386 0182h 0000h~00FFh 128KB Block418 01A2h 0000h~00FFh 128KB Block387 0183h 0000h~00FFh 128KB Block419 01A3h 0000h~00FFh 128KB Block388 0184h 0000h~00FFh 128KB Block420 01A4h 0000h~00FFh 128KB Block389 0185h 0000h~00FFh 128KB Block421 01A5h 0000h~00FFh 128KB Block390 0186h 0000h~00FFh 128KB Block422 01A6h 0000h~00FFh 128KB Block391 0187h 0000h~00FFh 128KB Block423 01A7h 0000h~00FFh 128KB Block392 0188h 0000h~00FFh 128KB Block424 01A8h 0000h~00FFh 128KB Block393 0189h 0000h~00FFh 128KB Block425 01A9h 0000h~00FFh 128KB Block394 018Ah 0000h~00FFh 128KB Block426 01AAh 0000h~00FFh 128KB Block395 018Bh 0000h~00FFh 128KB Block427 01ABh 0000h~00FFh 128KB Block396 018Ch 0000h~00FFh 128KB Block428 01ACh 0000h~00FFh 128KB Block397 018Dh 0000h~00FFh 128KB Block429 01ADh 0000h~00FFh 128KB Block398 018Eh 0000h~00FFh 128KB Block430 01AEh 0000h~00FFh 128KB Block399 018Fh 0000h~00FFh 128KB Block431 01AFh 0000h~00FFh 128KB Block400 0190h 0000h~00FFh 128KB Block432 01B0h 0000h~00FFh 128KB Block401 0191h 0000h~00FFh 128KB Block433 01B1h 0000h~00FFh 128KB Block402 0192h 0000h~00FFh 128KB Block434 01B2h 0000h~00FFh 128KB Block403 0193h 0000h~00FFh 128KB Block435 01B3h 0000h~00FFh 128KB Block404 0194h 0000h~00FFh 128KB Block436 01B4h 0000h~00FFh 128KB Block405 0195h 0000h~00FFh 128KB Block437 01B5h 0000h~00FFh 128KB Block406 0196h 0000h~00FFh 128KB Block438 01B6h 0000h~00FFh 128KB Block407 0197h 0000h~00FFh 128KB Block439 01B7h 0000h~00FFh 128KB Block408 0198h 0000h~00FFh 128KB Block440 01B8h 0000h~00FFh 128KB Block409 0199h 0000h~00FFh 128KB Block441 01B9h 0000h~00FFh 128KB Block410 019Ah 0000h~00FFh 128KB Block442 01BAh 0000h~00FFh 128KB Block411 019Bh 0000h~00FFh 128KB Block443 01BBh 0000h~00FFh 128KB Block412 019Ch 0000h~00FFh 128KB Block444 01BCh 0000h~00FFh 128KB Block413 019Dh 0000h~00FFh 128KB Block445 01BDh 0000h~00FFh 128KB Block414 019Eh 0000h~00FFh 128KB Block446 01BEh 0000h~00FFh 128KB Block415 019Fh 0000h~00FFh 128KB Block447 01BFh 0000h~00FFh 128KB 23 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY Block Block Address Page and Sector Address Size Block Block Address Page and Sector Address Size Block448 01C0h 0000h~00FFh 128KB Block480 01E0h 0000h~00FFh 128KB Block449 01C1h 0000h~00FFh 128KB Block481 01E1h 0000h~00FFh 128KB Block450 01C2h 0000h~00FFh 128KB Block482 01E2h 0000h~00FFh 128KB Block451 01C3h 0000h~00FFh 128KB Block483 01E3h 0000h~00FFh 128KB Block452 01C4h 0000h~00FFh 128KB Block484 01E4h 0000h~00FFh 128KB Block453 01C5h 0000h~00FFh 128KB Block485 01E5h 0000h~00FFh 128KB Block454 01C6h 0000h~00FFh 128KB Block486 01E6h 0000h~00FFh 128KB Block455 01C7h 0000h~00FFh 128KB Block487 01E7h 0000h~00FFh 128KB Block456 01C8h 0000h~00FFh 128KB Block488 01E8h 0000h~00FFh 128KB Block457 01C9h 0000h~00FFh 128KB Block489 01E9h 0000h~00FFh 128KB Block458 01CAh 0000h~00FFh 128KB Block490 01EAh 0000h~00FFh 128KB Block459 01CBh 0000h~00FFh 128KB Block491 01EBh 0000h~00FFh 128KB Block460 01CCh 0000h~00FFh 128KB Block492 01ECh 0000h~00FFh 128KB Block461 01CDh 0000h~00FFh 128KB Block493 01EDh 0000h~00FFh 128KB Block462 01CEh 0000h~00FFh 128KB Block494 01EEh 0000h~00FFh 128KB Block463 01CFh 0000h~00FFh 128KB Block495 01EFh 0000h~00FFh 128KB Block464 01D0h 0000h~00FFh 128KB Block496 01F0h 0000h~00FFh 128KB Block465 01D1h 0000h~00FFh 128KB Block497 01F1h 0000h~00FFh 128KB Block466 01D2h 0000h~00FFh 128KB Block498 01F2h 0000h~00FFh 128KB Block467 01D3h 0000h~00FFh 128KB Block499 01F3h 0000h~00FFh 128KB Block468 01D4h 0000h~00FFh 128KB Block500 01F4h 0000h~00FFh 128KB Block469 01D5h 0000h~00FFh 128KB Block501 01F5h 0000h~00FFh 128KB Block470 01D6h 0000h~00FFh 128KB Block502 01F6h 0000h~00FFh 128KB Block471 01D7h 0000h~00FFh 128KB Block503 01F7h 0000h~00FFh 128KB Block472 01D8h 0000h~00FFh 128KB Block504 01F8h 0000h~00FFh 128KB Block473 01D9h 0000h~00FFh 128KB Block505 01F9h 0000h~00FFh 128KB Block474 01DAh 0000h~00FFh 128KB Block506 01FAh 0000h~00FFh 128KB Block475 01DBh 0000h~00FFh 128KB Block507 01FBh 0000h~00FFh 128KB Block476 01DCh 0000h~00FFh 128KB Block508 01FCh 0000h~00FFh 128KB Block477 01DDh 0000h~00FFh 128KB Block509 01FDh 0000h~00FFh 128KB Block478 01DEh 0000h~00FFh 128KB Block510 01FEh 0000h~00FFh 128KB Block479 01DFh 0000h~00FFh 128KB Block511 01FFh 0000h~00FFh 128KB 24 OneNAND512(KFG1216x2A-xxB5) 2.7.2 FLASH MEMORY Internal Memory Spare Area Assignment The figure below shows the assignment of the spare area in the Internal Memory NAND Array. Spare Spare Spare Spare Main area Main area Main area Main area area area area area 256W 256W 256W 256W 8W 8W 8W 8W ECCm ECCm Note1 Note1 Note2 Note2 Note2 Note3 Note3 Note3 ECCm 1st 2nd 3rd MSB MSB LSB MSB LSB MSB LSB MSB LSB MSB LSB ECCs 2nd MSB LSB Note3 Note4 Note4 MSB LSB MSB { { { { { { { { LSB LSB ECCs 1st 1st W 2nd W 3rd W 4th W 5th W 6th W 7th W 8th W Spare Area Assignment in the Internal Memory NAND Array Information Word 1 2 3 4 Byte LSB MSB Note Description 1 Invalid Block information in 1st and 2nd page of an invalid block 2 Managed by internal ECC logic for Logical Sector Number data 3 Reserved for future use LSB MSB LSB MSB LSB MSB LSB Dedicated to internal ECC logic. Read Only. ECCm 1st for main area data MSB Dedicated to internal ECC logic. Read Only. ECCm 2nd for main area data LSB Dedicated to internal ECC logic. Read Only. ECCm 3rd for main area data MSB Dedicated to internal ECC logic. Read Only. ECCs 1st for 2nd word of spare area data LSB Dedicated to internal ECC logic. Read Only. ECCs 2nd for 3rd word of spare area data 5 6 7 MSB 8 LSB MSB 3 Reserved for future use 4 Available to the user 25 OneNAND512(KFG1216x2A-xxB5) 2.7.3 FLASH MEMORY External Memory (BufferRAM) Address Map The following table shows the External Memory address map in Word and Byte Order. Note that the data output is unknown while host reads a register bit of reserved area. Division Main area (64KB) Spare area (8KB) Address (word order) Address (byte order) Size (total 128KB) 0000h~00FFh 00000h~001FEh 512B 0100h~01FFh 00200h~003FEh 512B 0200h~02FFh 00400h~005FEh 512B DataM 0_0 DataRAM Main page0/sector0 0300h~03FFh 00600h~007FEh 512B DataM 0_1 DataRAM Main page0/sector1 1KB Usage R Description BootM 0 BootRAM Main sector0 BootM 1 BootRAM Main sector1 0400h~04FFh 00800h~009FEh 512B DataM 0_2 DataRAM Main page0/sector2 0500h~05FFh 00A00h~00BFEh 512B DataM 0_3 DataRAM Main page0/sector3 0600h~06FFh 00C00h~00DFEh 512B DataM 1_0 DataRAM Main page1/sector0 0700h~07FFh 00E00h~00FFEh 512B DataM 1_1 DataRAM Main page1/sector1 0800h~08FFh 01000h~011FEh 512B DataM 1_2 DataRAM Main page1/sector2 0900h~09FFh 01200h~013FEh 512B DataM 1_3 DataRAM Main page1/sector3 0A00h~7FFFh 01400h~0FFFEh 59K 8000h~8007h 10000h~1000Eh 16B 8008h~800Fh 10010h~1001Eh 16B 8010h~8017h 10020h~1002Eh 16B 4KB 59K 32B R/W R Reserved Reserved BootS 0 BootRAM Spare sector0 BootS 1 BootRAM Spare sector1 DataS 0_0 DataRAM Spare page0/sector0 8018h~801Fh 10030h~1003Eh 16B DataS 0_1 DataRAM Spare page0/sector1 8020h~8027h 10040h~1004Eh 16B DataS 0_2 DataRAM Spare page0/sector2 8028h~802Fh 10050h~1005Eh 16B 8030h~8037h 10060h~1006Eh 16B 128B R/W DataS 0_3 DataRAM Spare page0/sector3 DataS 1_0 DataRAM Spare page1/sector0 8038h~803Fh 10070h~1007Eh 16B DataS 1_1 DataRAM Spare page1/sector1 8040h~8047h 10080h~1008Eh 16B DataS 1_2 DataRAM Spare page1/sector2 8048h~804Fh 10090h~1009Eh 16B DataS 1_3 DataRAM Spare page1/sector3 8050h~8FFFh 100A0h~11FFEh 8032B 8032B - Reserved Reserved Reserved (24KB) 9000h~BFFFh 12000h~17FFEh 24KB 24KB - Reserved Reserved Reserved (8KB) C000h~CFFFh 18000h~19FFEh 8KB 8KB - Reserved Reserved Reserved (16KB) D000h~EFFFh 1A000h~1DFFEh 16KB 16KB - Reserved Reserved Registers (8KB) F000h~FFFFh 8KB 8KB R or R/W Registers Registers 1E000h~1FFFEh 26 OneNAND512(KFG1216x2A-xxB5) 2.7.4 FLASH MEMORY External Memory Detail Map Information The tables below show Word Order Address Map information for the BootRAM and DataRAM main and spare areas. • BootRAM(Main area) -0000h~01FFh: 2(sector) x 512byte(NAND main area) = 1KB 0100h~01FFh(512B) BootM 1 (sector 1 of page 0) 0000h~00FFh(512B) BootM 0 (sector 0 of page 0) • DataRAM(Main area) -0200h~09FFh: 8(sector) x 512byte(NAND main area) = 4KB 0200h~02FFh(512B) DataM 0_0 (sector 0 of page 0) 0300h~03FFh(512B) DataM 0_1 (sector 1 of page 0) 0400h~04FFh(512B) DataM 0_2 (sector 2 of page 0) 0500h~05FFh(512B) DataM 0_3 (sector 3 of page 0) 0600h~06FFh(512B) DataM 1_0 (sector 0 of page 1) 0700h~07FFh(512B) DataM 1_1 (sector 1 of page 1) 0800h~08FFh(512B) DataM 1_2 (sector 2 of page 1) 0900h~09FFh(512B) DataM 1_3 (sector 3 of page 1) • BootRAM(Spare area) -8000h~800Fh: 2(sector) x 16byte(NAND spare area) = 32B 8008h~800Fh(16B) BootS 1 (sector 1 of page 0) 8000h~8007h(16B) BootS 0 (sector 0 of page 0) • DataRAM(Spare area) -8010h~804Fh: 8(sector) x 16byte(NAND spare area) = 128B 8010h~8017h(16B) DataS 0_0 (sector 0 of page 0) 8018h~801Fh(16B) DataS 0_1 (sector 1 of page 0) 8020h~8027h(16B) DataS 0_2 (sector 2 of page 0) 8028h~802Fh(16B) DataS 0_3 (sector 3 of page 0) 8030h~8037h(16B) DataS 1_0 (sector 0 of page 1) 8038h~803Fh(16B) DataS 1_1 (sector 1 of page 1) 8040h~8047h(16B) DataS 1_2 (sector 2 of page 1) 8048h~804Fh(16B) DataS 1_3 (sector 3 of page 1) *NAND Flash array consists of 2KB page size and 128KB block size. 27 OneNAND512(KFG1216x2A-xxB5) 2.7.5 FLASH MEMORY External Memory Spare Area Assignment Equivalent to 1word of NAND Flash Buf. Word Address Byte Address BootS 0 8000h 10000h 8001h 10002h 8002h 10004h 8003h 10006h 8004h 10008h ECC Code for Main area data (2nd) ECC Code for Main area data (1st) 8005h 1000Ah ECC Code for Spare area data (1 ) ECC Code for Main area data (3rd) 8006h 1000Ch FFh(Reserved for the future use) ECC Code for Spare area data (2nd) 8007h 1000Eh Free Usage 8008h 10010h BI BootS 1 DataS 0_0 DataS 0_1 8009h 10012h 800Ah 10014h F E D C B A 9 8 7 6 5 4 3 2 1 BI Managed by Internal ECC logic Reserved for the future use Managed by Internal ECC logic Reserved for the current and future use st Managed by Internal ECC logic Reserved for the future use Managed by Internal ECC logic 800Bh 10016h 800Ch 10018h ECC Code for Main area data (2nd) Reserved for the current and future use ECC Code for Main area data (1st) 800Dh 1001Ah ECC Code for Spare area data (1 ) ECC Code for Main area data (3rd) 800Eh 1001Ch FFh(Reserved for the future use) ECC Code for Spare area data (2nd) 800Fh 1001Eh st Free Usage 8010h 10020h BI 8011h 10022h Managed by Internal ECC logic 8012h 10024h 8013h 10026h Reserved for the future use Managed by Internal ECC logic 8014h 10028h ECC Code for Main area data (2nd) ECC Code for Main area data (1st) 8015h 1002Ah ECC Code for Spare area data (1st) ECC Code for Main area data (3rd) 8016h 1002Ch FFh(Reserved for the future use) ECC Code for Spare area data (2nd) 8017h 1002Eh Reserved for the current and future use Free Usage 8018h 10030h BI 8019h 10032h Managed by Internal ECC logic 801Ah 10034h 801Bh 10036h Reserved for the future use Managed by Internal ECC logic 801Ch 10038h ECC Code for Main area data (2nd) ECC Code for Main area data (1st) 801Dh 1003Ah ECC Code for Spare area data (1st) ECC Code for Main area data (3rd) 801Eh 1003Ch FFh(Reserved for the future use) ECC Code for Spare area data (2nd) 801Fh 1003Eh Reserved for the current and future use Free Usage 28 0 OneNAND512(KFG1216x2A-xxB5) Buf. DataS 0_2 DataS 0_3 DataS 1_0 DataS 1_1 DataS 1_2 Word Byte Address Address F E D C B FLASH MEMORY A 9 8 7 6 5 8020h 10040h BI 8021h 10042h Managed by Internal ECC logic 3 2 1 8022h 10044h 8023h 10046h 8024h 10048h ECC Code for Main area data (2nd) ECC Code for Main area data (1st) 8025h 1004Ah ECC Code for Spare area data (1st) ECC Code for Main area data (3rd) 8026h 1004Ch Reserved for the future use ECC Code for Spare area data (2nd) 8027h 1004Eh Free Usage 8028h 10050h BI 8029h 10052h 802Ah 10054h Reserved for the future use 4 Managed by Internal ECC logic Reserved for the current and future use Managed by Internal ECC logic Reserved for the future use Managed by Internal ECC logic 802Bh 10056h 802Ch 10058h ECC Code for Main area data (2nd) Reserved for the current and future use ECC Code for Main area data (1st) 802Dh 1005Ah ECC Code for Spare area data (1st) ECC Code for Main area data (3rd) 802Eh 1005Ch Reserved for the future use ECC Code for Spare area data (2nd) 802Fh 1005Eh Free Usage 8030h 10060h BI 8031h 10062h 8032h 10064h 8033h 10066h 8034h 10068h ECC Code for Main area data (2nd) ECC Code for Main area data (1st) 8035h 1006Ah ECC Code for Spare area data (1 ) ECC Code for Main area data (3rd) 8036h 1006Ch Reserved for the future use ECC Code for Spare area data (2nd) 8037h 1006Eh Free Usage 8038h 10070h BI 8039h 10072h 803Ah 10074h Managed by Internal ECC logic Reserved for the future use Managed by Internal ECC logic Reserved for the current and future use st Managed by Internal ECC logic Reserved for the future use Managed by Internal ECC logic 803Bh 10076h 803Ch 10078h ECC Code for Main area data (2nd) Reserved for the current and future use ECC Code for Main area data (1st) 803Dh 1007Ah ECC Code for Spare area data (1 ) ECC Code for Main area data (3rd) 803Eh 1007Ch Reserved for the future use ECC Code for Spare area data (2nd) 803Fh 1007Eh 8040h 10080h BI 8041h 10082h Managed by Internal ECC logic st Free Usage 8042h 10084h 8043h 10086h Reserved for the future use Managed by Internal ECC logic 8044h 10088h ECC Code for Main area data (2nd) ECC Code for Main area data (1st) 8045h 1008Ah ECC Code for Spare area data (1st) ECC Code for Main area data (3rd) 8046h 1008Ch Reserved for the future use ECC Code for Spare area data (2nd) 8047h 1008Eh Reserved for the current and future use Free Usage 29 0 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY Equivalent to 1word of NAND Flash Buf. DataS 1_3 Word Byte Address Address F E D C B A 9 8 7 6 5 4 3 2 1 8048h 10090h BI 8049h 10092h Managed by Internal ECC logic 804Ah 10094h 804Bh 10096h 804Ch 10098h ECC Code for Main area data (2nd) ECC Code for Main area data (1st) 804Dh 1009Ah ECC Code for Spare area data (1st) ECC Code for Main area data (3rd) 804Eh 1009Ch Reserved for the future use ECC Code for Spare area data (2nd) 804Fh 1009Eh Reserved for the future use 0 Managed by Internal ECC logic Reserved for the current and future use Free Usage NOTE: - BI: Bad block Information >Host can use complete spare area except BI and ECC code area. For example, Host can write data to Spare area buffer except for the area controlled by ECC logic at program operation. >In case of ’with ECC’ mode, OneNAND automatically generates ECC code for both main and spare data of memory during program operation, but does not update ECC code to spare bufferRAM during load operation. >When loading/programming spare area, spare area BufferRAM address(BSA) and BufferRAM sector count(BSC) is chosen via Start buffer register as it is. 30 OneNAND512(KFG1216x2A-xxB5) 2.8 FLASH MEMORY Registers Section 2.8 of this specification provides information about the OneNAND512 registers. 2.8.1 Register Address Map This map describes the register addresses, register name, register description, and host accessibility. Address (word order) Address (byte order) Name Host Access F000h 1E000h Manufacturer ID R F001h 1E002h Device ID R Device identification F002h 1E004h Version ID R N/A F003h 1E006h Data Buffer size R Data buffer size F004h 1E008h Boot Buffer size R Boot buffer size F005h 1E00Ah Amount of buffers R Amount of data/boot buffers Description Manufacturer identification F006h 1E00Ch Technology R Info about technology F007h~F0FFh 1E00Eh~1E1FEh Reserved - Reserved for user F100h 1E200h Start address 1 R/W NAND Flash Block Address F101h 1E202h Start address 2 R/W Reserved F102h 1E204h Start address 3 R/W Destination Block address for Copy back program Destination Page & Sector address for Copy back program F103h 1E206h Start address 4 R/W F104h 1E208h Start address 5 - N/A F105h 1E20Ah Start address 6 - N/A F106h 1E20Ch Start address 7 - N/A F107h 1E20Eh Start address 8 R/W F108h~F1FFh 1E210h~1E3FEh Reserved - F200h 1E400h Start Buffer R/W NAND Flash Page & Sector address Reserved for user Buffer Number for the page data transfer to/from the memory and the start Buffer Address The meaning is with which buffer to start and how many buffers to use for the data transfer F201h~F207h 1E402h~1E40Eh Reserved - Reserved for user F208h~F21Fh 1E410h~1E43Eh Reserved - Reserved for vendor specific purposes F220h 1E440h Command R/W F221h 1E442h System Configuration 1 R, R/W F222h 1E444h System Configuration 2 - N/A F223h~F22Fh 1E446h~1E45Eh Reserved - Reserved for user F230h~F23Fh 1E460h~1E47Eh Reserved - Reserved for vendor specific purposes F240h 1E480h Controller Status R Controller Status and result of memory operation F241h 1E482h Interrupt R/W F242h~F24Bh 1E484h~1E496h Reserved - F24Ch 1E498h Start Block Address R/W 31 Host control and memory operation commands memory and Host Interface Configuration Memory Command Completion Interrupt Status Reserved for user Start memory block address in Write Protection mode OneNAND512(KFG1216x2A-xxB5) Address (word order) Address (byte order) F24Dh FLASH MEMORY Name Host Access 1E49Ah Reserved R/W F24Eh 1E49Ch Write Protection Status R Current memory Write Protection status (unlocked/locked/tight-locked) F24Fh~FEFFh 1E49Eh~1FDFEh Reserved - Reserved for user FF00h 1FE00h ECC Status Register R ECC status of sector FF01h 1FE02h ECC Result of main area data R ECC error position of Main area data error for first selected Sector FF02h 1FE04h ECC Result of spare area data R ECC error position of Spare area data error for first selected Sector FF03h 1FE06h ECC Result of main area data R ECC error position of Main area data error for second selected Sector FF04h 1FE08h ECC Result of spare area data R ECC error position of Spare area data error for second selected Sector FF05h 1FE0Ah ECC Result of main area data R ECC error position of Main area data error for third selected Sector FF06h 1FE0Ch ECC Result of spare area data R ECC error position of Spare area data error for third selected Sector FF07h 1FE0Eh ECC Result of main area data R ECC error position of Main area data error for fourth selected Sector FF08h 1FE10h ECC Result of spare area data R ECC error position of Spare area data error for fourth selected Sector FF09h~FFFFh 1FE12h~1FFFEh Reserved - Reserved for vendor specific purposes 2.8.2 Description Reserved for user Manufacturer ID Register F000h (R) This Read register describes the manufacturer's identification. Samsung Electronics Company manufacturer's ID is 00ECh. F000h, default = 00ECh 15 14 13 12 11 10 9 8 7 ManufID 32 6 5 4 3 2 1 0 OneNAND512(KFG1216x2A-xxB5) 2.8.3 FLASH MEMORY Device ID Register F001h (R) This Read register describes the device. F001h, see table for default. 15 14 13 12 11 10 9 8 7 6 5 4 3 2 DeviceID Device Identification Device Identification Description DeviceID [1:0] Vcc 00 = 1.8V, 01 = 2.65V/3.3V, 10/11 = reserved DeviceID [2] Muxed/Demuxed 0 = Muxed, 1 = Demuxed DeviceID [3] Single/DPP 0 = Single, 1 = DDP DeviceID [6:4] Density 000 = 128Mb, 001 = 256Mb, 010 = 512Mb, 011 = 1Gb, 100 = 2Gb Device ID Default Device DeviceID[15:0] KFG1216Q2A 0024h KFG1216D2A 0025h KFG1216U2A 0025h 33 1 0 OneNAND512(KFG1216x2A-xxB5) 2.8.4 FLASH MEMORY Version ID Register F002h This register is reserved for manufacturer 2.8.5 Data Buffer Size Register F003h (R) This Read register describes the size of the Data Buffer. F003h, default = 0800h 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 1 0 DataBufSize Data Buffer Size Information Version Identification Description Total data buffer size in Words equal to 2 buffers of 1024 Words each DataBufSize 2.8.6 (2 x 1024 = 211) in the memory interface Boot Buffer Size Register F004h (R) This Read register describes the size of the Boot Buffer. F004h, default = 0200h 15 14 13 12 11 10 9 8 7 6 5 4 3 2 BootBufSize Register Information BootBufSize Description Total boot buffer size in Words equal to 1 buffer of 512 Words (1 x 512 = 29) in the memory interface 34 OneNAND512(KFG1216x2A-xxB5) 2.8.7 FLASH MEMORY Number of Buffers Register F005h (R) This Read register describes the number of each Buffer. F005h, default = 0201h 15 14 13 12 11 10 9 8 7 6 5 DataBufAmount 4 3 2 1 0 2 1 0 BootBufAmount Number of Buffers Information Register Information Description DataBufAmount The number of data buffers = 2 (2N, N=1) BootBufAmount The number of boot buffers = 1 (2N, N=0) 2.8.8 Technology Register F006h (R) This Read register describes the internal NAND array technology. F006h, default = 0000h 15 14 13 12 11 10 9 8 7 6 5 Tech Technology Information Technology Register Setting NAND SLC 0000h NAND MLC 0001h Reserved 0002h ~ FFFFh 35 4 3 OneNAND512(KFG1216x2A-xxB5) 2.8.9 FLASH MEMORY Start Address1 Register F100h (R/W) This Read/Write register describes the start address of the NAND Flash block address which will be loaded, programmed, or erased. F100h, default = 0000h 15 14 13 12 11 10 9 8 7 6 5 Reserved(00000) 4 3 2 FBA Device Number of Block FBA 512Mb 512 FBA[8:0] Start Address1 Information Register Information Description FBA NAND Flash Block Address 2.8.10 Start Address2 Register F101h (R/W) This register is reserved for future use. 36 1 0 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY 2.8.11 Start Address3 Register F102h (R/W) This Read/Write register describes the NAND Flash destination block address which will be copy back programmed. F102h, default = 0000h 15 14 13 12 11 10 9 8 7 6 5 4 Reserved(000000) 3 2 1 0 FCBA Device Number of Block FBA 512Mb 512 FCBA[8:0] Start Address3 Information Register Information Description FCBA NAND Flash Copy Back Block Address 2.8.12 Start Address4 Register F103h (R/W) This Read/Write register describes the NAND Flash destination page address in a block and the NAND Flash destination sector address in a page for copy back programming. F103h, default = 0000h 15 14 13 12 11 10 9 8 7 6 5 Reserved(00000000) 4 3 2 FCPA 1 0 FCSA Start Address4 Information Item Description Default Value Range FCPA NAND Flash Copy Back Page Address 000000 000000 ~ 111111, 6 bits for 64 pages FCSA NAND Flash Copy Back Sector Address 00 00 ~ 11, 2 bits for 4 sectors 37 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY 2.8.13 Start Address5 Register F104h This register is reserved for future use. 2.8.14 Start Address6 Register F105h This register is reserved for future use. 2.8.15 Start Address7 Register F106h This register is reserved for future use. 2.8.16 Start Address8 Register F107h (R/W) This Read/Write register describes the NAND Flash start page address in a block for a page load, copy back program, or program operation and the NAND Flash start sector address in a page for a load, copy back program, or program operation. F107h, default = 0000h 15 14 13 12 11 10 9 8 7 6 5 Reserved (00000000) 4 FPA 3 2 1 0 FSA Start Address8 Information Item Description Default Value Range FPA NAND Flash Page Address 000000 000000 ~ 111111, 6 bits for 64 pages FSA NAND Flash Sector Address 00 00 ~ 11, 2 bits for 4 sectors 38 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY 2.8.17 Start Buffer Register F200h (R/W) This Read/Write register describes the BufferRAM Sector Count (BSC) and BufferRAM Sector Address (BSA). The BufferRAM Sector Count (BSC) field specifies the number of sectors to be loaded, programmed, or copy back programmed. At 00 value (the default value), the number of sector is "4". If the internal RAM buffer reaches its maximum value of 11, it will count up to 0 value to meet the BSC value. For example, if BSA = 1101, BSC = 00, then the selected BufferRAM will count up from '1101 → 1110 → 1111 → 1100'. The BufferRAM Sector Address (BSA) is the sector 0~3 address in the internal BootRAM and DataRAM where data is placed. F200h, default = 0000h 15 14 13 12 11 Reserved(0000) 10 9 8 7 BSA 6 5 4 3 2 1 Reserved(000000) 0 BSC Start Address8 Information Item Description BSA[3] Selection bit between BootRAM and DataRAM BSA[2] Selection bit between DataRAM0 and DataRAM1 BSA[1:0] Selection bit between Sector0 and Sector1 in the internal BootRAM Selection bit between Sector0 to Sector3 in the internal DataRAM Main area data 512B Spare area data 16B { { BootRAM DataRAM0 DataRAM1 BSA BootRAM 0 0000 BootRAM 1 0001 DataRAM 0_0 1000 DataRAM 0_1 1001 DataRAM 0_2 1010 DataRAM 0_3 1011 Sector: (512 + 16) Byte BSC Number of Sectors DataRAM 1_0 1100 01 1 sector DataRAM 1_1 1101 10 2 sector DataRAM 1_2 1110 11 3 sector DataRAM 1_3 1111 00 4 sector 39 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY 2.8.18 Command Register F220h (R/W) This Read/Write register describes the operation of the OneNAND interface. Note that all commands should be issued right after INT is turned from ready state to busy state. (i.e. right after 0 is written to INT register.) After any command is issued and the corresponding operation is completed, INT goes back to ready state. (00F0h and 00F3h may be accepted during busy state of some operations. Refer to the rightmost column of the command register table below.) F220h, default = 0000h 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Command CMD Acceptable command during busy Operation 0000h Load single/multiple sector data unit into buffer 0013h Load single/multiple spare sector into buffer 00F0h, 00F3h 00F0h, 00F3h 1) 0080h Program single/multiple sector data unit from buffer 001Ah Program single/multiple spare data unit from buffer 00F0h, 00F3h 001Bh Copy back Program operation 00F0h, 00F3h 0023h Unlock NAND array a block - 002Ah Lock NAND array a block - 002Ch Lock-tight NAND array a block 00F0h, 00F3h 0071h Erase Verify Read 00F0h, 00F3h 0094h Block Erase 00F0h, 00F3h 00F0h, 00F3h 0095h Multi-Block Erase 00B0h Erase Suspend - 0030h Erase Resume 00F0h, 00F3h 00F0h Reset NAND Flash Core 00F3h Reset OneNAND 0065h OTP Access - 2) 00F0h, 00F3h NOTE: 1) 0080h programs both main and spare area, while 001Ah programs only spare area. Refer to chapter 5.8 for NOP limits in issuing these commands. When using 0080h and 001Ah command, Read-only part in spare area must be masked by FF. (Refer to chapter 2.7.2) 2) ’Reset OneNAND’(=Hot reset) command makes the registers and NAND Flash core into default state as the warm reset(=reset by RP pin). 40 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY 2.8.19 System Configuration 1 Register F221h (R, R/W) This Read/Write register describes the system configuration. F221h, default = 40C0h 8 7 6 5 4 R/W 15 14 R/W 13 12 11 R/W 10 9 R/W R/W R/W R/W R/W 3 R 2 1 R 0 RM BRL BL ECC RDY pol INT pol IOBE RDY Conf Reserved(000) BWPS Read Mode (RM) RM Read Mode 0 Asynchronous read(default) 1 Synchronous read Read Mode Information[15] Item Definition Description RM Read Mode Selects between asynchronous read mode and synchronous read mode Burst Read Latency (BRL) BRL Latency Cycles 000 8(N/A) 001 9(N/A) 010 10(N/A) 011 3(up to 40MHz) 100 4(default, min.) 101 5 110 6 111 7 Burst Read Latency (BRL) Information[14:12] Item Definition Description BRL Burst Read Latency Specifies the access latency in the burst read transfer after the initial access 41 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY Burst Length (BL) BL Burst Length(Main) Burst Length(Spare) 000 Continuous(default) 001 4 words 010 8 words 011 16 words 100 32 words N/A 101~111 Reserved Burst Length (BL) Information[11:9] Item BL Definition Description Burst Length Specifies the size of the burst length during a synchronous read, wrap around and linear burst read Error Correction Code (ECC) Information[8] Item Definition Description Error Correction Code Operation 0 = with correction (default) 1 = without correction (bypassed) Item Definition Description RDYpol RDY signal polarity 1 = high for ready (default) 0 = low for ready INT bit of Interrupt Status Register INT Pin output 0 (busy) High 1 (ready) Low 0 (busy) Low 1 (ready) High ECC RDY Polarity (RDYpol) Information[7] INT Polarity (INTpol) Information[6] INTpol 0 1 (default) 42 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY I/O Buffer Enable (IOBE) IOBE is the I/O Buffer Enable for the INT and RDY signals. At startup, INT and RDY outputs are High-Z. Bits 6 and 7 become valid after IOBE is set to "1". IOBE can be reset by a Cold Reset or by writing "0" to bit 5 of System Configuration1 Register. I/O Buffer Enable Information[5] Item Definition Description IOBE I/O Buffer Enable for INT and RDY signals 0 = disable (default) 1 = enable RDY Configuration (RDY conf) RDY Configuration Information[4] Item RDY conf Definition Description RDY configuration 0=active one clock before valid data(default) 1=active with valid data Boot Buffer Write Protect Status (BWPS) Boot Buffer Write Protect Status Information[0] Item Definition Description BWPS Boot Buffer Write Protect Status 0 = locked (fixed) 43 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY 2.8.20 System Configuration 2 Register F222h This register is reserved for future use. 2.8.21 Controller Status Register F240h (R) This Read register shows the overall internal status of the OneNAND and the controller. F240h, default = 0000h 15 14 13 12 11 10 9 OnGo Lock Load Prog Erase Error Sus 8 7 6 Reserv RSTB ed(0) 5 OTPL 4 3 2 Reserved(000000) 1 0 TO (0) OnGo This bit shows the overall internal status of the OneNAND device. OnGo Information[15] Item Definition Description OnGo Internal Device Status 0 = ready 1 = busy Lock This bit shows whether the host is loading data from the NAND Flash array into the locked BootRAM or whether the host is performing a program/erase of a locked block of the NAND Flash array. Lock Information[14] Lock Locked/Unlocked Check Result 0 Unlocked 1 Locked Load This bit shows the Load Operation status. Load Information[13] Item Load Definition Description Load Operation status 0 = ready (default) 1 = busy or error (see controller status output modes) 44 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY Program This bit shows the Program Operation status. Program Information[12] Item Definition Description Prog Program Operation status 0 = ready (default) 1 = busy or error (see controller status output modes) Erase This bit shows the Erase Operation status. Erase Information[11] Item Definition Description Erase Erase Operation status 0 = ready (default) 1 = busy or error (see controller status output modes) Error This bit shows the overall Error status, including Load Reset, Program Reset, and Erase Reset status. Error Information[10] Error Current Sector/Page Load/Program/CopyBack. Program/ Erase Result and Invalid Command Input 0 Pass 1 Fail Erase Suspend (Sus) This bit shows the Erase Suspend status. Sus Information[9] Sus Erase Suspend Status 0 Erase Resume(Default) 1 Erase Suspend, Program Ongoing(Susp.), Load Ongoing(Susp.), Program Fail(Susp.), Load Fail(Susp.), Invalid Command(Susp.) 45 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY Reset / Busy (RSTB) This bit shows the Reset Operation status. RSTB Information[7] Item Definition Description RSTB Reset Operation Status 0 = ready (default) 1 = busy (see controller status output modes) OTP Lock Status (OTPL) This bit shows whether the OTP block is locked or unlocked. Locking the OTP has the effect of a 'write-protect' to guard against accidental re-programming of data stored in the OTP block. The OTPL status bit is automatically updated at power-on. OTP Lock Information[6] OTPL OTP Locked/Unlocked Status 0 OTP Block Unlock Status(Default) 1 OTP Block Lock Status(Disable OTP Program/Erase) Time Out (TO) This bit determines if there is a time out for load, program, copy back program, and erase operations. It is fixed at 'no time out'. TO Information[0] Item Definition Description TO Time Out 0 = no time out 46 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY Controller Status Register Output Modes Mode Controller Status Register [15:0] OnGo Lock Load Prog Load Ongoing 1 0 1 0 Erase Error 0 0 Sus 0 Reserved(0) RSTB OTPL Reserved(0) 0 0 0/1 00000 TO 0 Program Ongoing 1 0 0 1 0 0 0 0 0 0/1 00000 0 Erase Ongoing 1 0 0 0 1 0 0 0 0 0/1 00000 0 Reset Ongoing 1 0 0 0 0 0 0 0 1 0/1 00000 0 Multi-Block Erase Ongoing 1 0 0 0 1 0 0 0 0 0/1 00000 0 Erase Verify Read Ongoing 1 0 0 0 0 0 0 0 0 0/1 00000 0 Load OK 0 0 0 0 0 0 0 0 0 0/1 00000 0 Program OK 0 0 0 0 0 0 0 0 0 0/1 00000 0 Erase OK 0 0 0 0 0 0 0 0 0 0/1 00000 0 0 0 0 0 0 0 0 0 0 0/1 00000 0 Load Fail1) 0 0 1 0 0 1 0 0 0 0/1 00000 0 Program Fail 0 0 0 1 0 1 0 0 0 0/1 00000 0 Erase Fail 0 0 0 0 1 1 0 0 0 0/1 00000 0 0 0 0 0 1 1 0 0 0 0/1 00000 0 Load Reset2) 0 0 1 0 0 1 0 0 1 0/1 00000 0 Program Reset 0 0 0 1 0 1 0 0 1 0/1 00000 0 Erase Reset 0 0 0 0 1 1 0 0 1 0/1 00000 0 Erase Suspend 0 0 0 0 1 0 1 0 0 0/1 00000 0 Program Lock 0 1 0 1 0 1 0 0 0 0/1 00000 0 Erase Verify Read OK3) Erase Verify Read Fail3) Erase Lock 0 1 0 0 1 1 0 0 0 0/1 00000 0 Load Lock(Buffer Lock) 0 1 1 0 0 1 0 0 0 0/1 00000 0 OTP Program Fail(Lock) 0 1 0 1 0 1 0 0 0 1 00000 0 OTP Program Fail 0 0 0 1 0 1 0 0 0 0 00000 0 OTP Erase Fail 0 1 0 0 1 1 0 0 0 0/1 00000 0 Program Ongoing(Susp.) 1 0 0 1 1 0 1 0 0 0/1 00000 0 Load Ongoing(Susp.) 1 0 1 0 1 0 1 0 0 0/1 00000 0 Program Fail(Susp.) 0 0 0 1 1 1 1 0 0 0/1 00000 0 Load Fail(Susp.) 0 0 1 0 1 1 1 0 0 0/1 00000 0 Invalid Command 0 0 0 0 0 1 0 0 0 0/1 00000 0 Invalid Command(Susp.) 0 0 0 0 1 1 1 0 0 0/1 00000 0 NOTE: 1. ERm and/or ERs bits in ECC status register at Load Fail case is 10. (2bits error - uncorrectable) 2. ERm and ERs bits in ECC status register at Load Reset case are 00. (No error) 3. Multi Block Erase status should be checked by Erase Verify Read operation. 47 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY 2.8.22 Interrupt Status Register F241h (R/W) This Read/Write register shows status of the OneNAND interrupts. F241h, defaults = 8080h after Cold Reset; 8010h after Warm/Hot Reset 15 14 13 INT 12 11 10 9 8 Reserved(0000000) 7 6 5 4 RI WI EI RSTI 3 2 1 0 Reserved(0000) Interrupt (INT) This is the master interrupt bit. The INT bit is wired directly to the INT pin on the chip. Upon writing '0' to the INT bit, the INT pin goes low if INTpol is high and goes high if INTpol is low. INT Interrupt [15] Status Default State Conditions Cold Warm/hot Valid State Interrupt Function 1 1 0 off sets itself to ’1’ One or more of RI, WI, RSTI and EI is set to ’1’, or 0065h, 0023h, 0071h, 002A and 002C commands are completed 0→ 1 Pending clears to ’0’ ’0’ is written to this bit, or Cold/Warm/Hot reset is being performed 1→ 0 off Read Interrupt (RI) This is the Read interrupt bit. RI Interrupt [7] Default State Status Conditions sets itself to ’1’ At the completion of an Load Operation (0000h, 0013h, Load Data into Buffer, or boot is done) clears to ’0’ ’0’ is written to this bit, or Cold/Warm/Hot reset is being performed Cold Warm/hot Valid State Interrupt Function 1 0 0 off 0→ 1 Pending 1→ 0 off Write Interrupt (WI) This is the Write interrupt bit. WI Interrupt [6] Default State Status Conditions sets itself to ’1’ At the completion of an Program Operation (0080h, 001Ah, 001Bh) clears to ’0’ ’0’ is written to this bit, or Cold/Warm/Hot reset is being performed 48 Cold Warm/hot Valid State Interrupt Function 0 0 0 off 0→ 1 Pending 1→ 0 off OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY Erase Interrupt (EI) This is the Erase interrupt bit. EI Interrupt [5] Default State Status Conditions sets itself to ’1’ At the completion of an Erase Operation (0094h, 0095h, 0030h) clears to ’0’ ’0’ is written to this bit, or Cold/Warm/Hot reset is being performed Cold Warm/hot Valid State Interrupt Function 0 0 0 off 0→ 1 Pending 1→ 0 off Reset Interrupt (RSTI) This is the Reset interrupt bit. RSTI Interrupt [4] Status Default State Conditions Cold Warm/hot Valid State Interrupt Function 0 1 0 off sets itself to ’1’ At the completion of an Reset Operation (00B0h, 00F0h, 00F3h or warm reset is released) 0→ 1 Pending clears to ’0’ ’0’ is written to this bit 1→ 0 off 2.8.23 Start Block Address Register F24Ch (R/W) This Read/Write register shows the NAND Flash block address in the Write Protection mode. Setting this register precedes a 'Lock Block' command, 'Unlock Block' command, or ’Lock-Tight' Command. F24Ch, default = 0000h 15 14 13 12 11 10 9 8 7 Reserved(0000000) 6 5 4 3 2 1 0 SBA Device Number of Block SBA 512Mb 512 [8:0] SBA Information[9:0] Item Definition Description SBA Start Block Address Precedes Lock Block, Unlock Block, or Lock-Tight commands 49 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY 2.8.24 End Block Address Register F24Dh This register is reserved for future use. 2.8.25 NAND Flash Write Protection Status Register F24Eh (R) This Read register shows the Write Protection Status of the NAND Flash memory array. To read the write protection status, FBA has to be set before reading the register. F24Eh, default = 0002h 15 14 13 12 11 10 9 8 7 6 5 4 3 Reserved(0000000000000) 2 1 0 US LS LTS Write Protection Status Information[2:0] Item Bit Definition Description US 2 Unlocked Status 1 = current NAND Flash block is unlocked LS 1 Locked Status 1 = current NAND Flash block is locked LTS 0 Locked-Tight Status 1 = current NAND Flash block is locked-tight 2.8.26 ECC Status Register FF00h (R) This Read register shows the Error Correction Status. The OneNAND can detect 1- or 2-bit errors and correct 1-bit errors. 3-bit or more error detection and correction is not supported. ECC can be performed on the NAND Flash main and spare memory areas. The ECC status register can also show the number of errors in a sector as a result of an ECC check in during a load operation. ECC status bits are also updated during a boot loading operation. FF00h, default = 0000h 15 14 ERm3 13 12 11 ERs3 10 ERm2 9 8 7 ERs2 6 ERm1 5 4 3 ERs1 2 ERm0 Error Status ERm, ERs ECC Status 00 No Error 01 1-bit error(correctable) 10 2 bits error (uncorrectable) 11 Reserved 50 1 0 ERs0 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY ECC Information[15:0] Item Definition Description ERm0 1st selected sector of the main BufferRAM Status of errors in the 1st selected sector of the main BufferRAM as a result of an ECC check during a load operation. Also updated during a Bootload operation. ERm1 2nd selected sector of the main BufferRAM Status of errors in the 2nd selected sector of the main BufferRAM as a result of an ECC check during a load operation. Also updated during a Bootload operation. ERm2 3rd selected sector of the main BufferRAM Status of errors in the 3rd selected sector of the main BufferRAM as a result of an ECC check during a load operation. Also updated during a Bootload operation. ERm3 4th selected sector of the main BufferRAM Status of errors in the 4th selected sector of the main BufferRAM as a result of an ECC check during a load operation. Also updated during a Bootload operation. ERs0 1st selected sector of the spare BufferRAM Status of errors in the 1st selected sector of the spare BufferRAM as a result of an ECC check during a load operation. Also updated during a Bootload operation. ERs1 2nd selected sector of the spare BufferRAM Status of errors in the 2nd selected sector of the spare BufferRAM as a result of an ECC check during a load operation. Also updated during a Bootload operation. ERs2 3rd selected sector of the spare BufferRAM Status of errors in the 3rd selected sector of the spare BufferRAM as a result of an ECC check during a load operation. Also updated during a Bootload operation. ERs3 4th selected sector of the spare BufferRAM Status of errors in the 4th selected sector of the spare BufferRAM as a result of an ECC check during a load operation. Also updated during a Bootload operation. 2.8.27 ECC Result of 1st Selected Sector, Main Area Data Register FF01h (R) This Read register shows the Error Correction result for the 1st selected sector of the main area data. ECCposWord0 is the error position address in the Main Area data of 256 words. ECCposIO0 is the error position address which selects 1 of 16 DQs. ECCposWord0 and ECCposIO0 are also updated at boot loading. FF01h, default = 0000h 15 14 13 12 11 10 9 8 Reserved(0000) 7 6 5 4 3 ECCposWord0 2 1 0 ECCposIO0 2.8.28 ECC Result of 1st Selected Sector, Spare Area Data Register FF02h (R) This Read register shows the Error Correction result for the 1st selected sector of the spare area data. ECClogSector0 is the error position address for 1.5 words of 2nd and 3rd words in the spare area. ECCposIO0 is the error position address which selects 1 of 16 DQs. ECClogSector0 and ECCposIO0 are also updated at boot loading. FF02h, default = 0000h 15 14 13 12 11 10 9 8 7 6 Reserved(0000000000) 5 4 ECClogSector0 51 3 2 1 ECCposIO0 0 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY 2.8.29 ECC Result of 2nd Selected Sector, Main Area Data Register FF03h (R) This Read register shows the Error Correction result for the 2nd selected sector of the main area data. ECCposWord1 is the error position address in the Main Area data of 256 words. ECCposIO1 is the error position address which selects 1 of 16 DQs. ECCposWord1 and ECCposIO1 are also updated at boot loading. FF03h, default = 0000h 15 14 13 12 11 10 9 8 Reserved(0000) 7 6 5 4 3 ECCposWord1 2 1 0 ECCposIO1 2.8.30 ECC Result of 2nd Selected Sector, Spare Area Data Register FF04h (R) This Read register shows the Error Correction result for the 2nd selected sector of the spare area data. ECClogSector1 is the error position address for 1.5 words of 2nd and 3rd words in the spare area. ECCposIO1 is the error position address which selects 1 of 16 DQs. ECClogSector1 and ECCposIO1 are also updated at boot loading. FF04h, default = 0000h 15 14 13 12 11 10 9 8 7 6 5 Reserved(0000000000) 4 3 ECClogSector1 2 1 0 ECCposIO1 2.8.31 ECC Result of 3rd Selected Sector, Main Area Data Register FF05h (R) This Read register shows the Error Correction result for the 3rd selected sector of the main area data. ECCposWord2 is the error position address in the Main Area data of 256 words. ECCposIO2 is the error position address which selects 1 of 16 DQs. ECCposWord2 and ECCposIO2 are also updated at boot loading. FF05h, default = 0000h 15 14 13 12 11 10 9 8 Reserved(0000) 7 6 5 4 3 ECCposWord2 2 1 0 ECCposIO2 2.8.32 ECC Result of 3rd Selected Sector, Spare Area Data Register FF06h (R) This Read register shows the Error Correction result for the 3rd selected sector of the spare area data. ECClogSector2 is the error position address for 1.5 words of 2nd and 3rd words in the spare area. ECCposIO2 is the error position address which selects 1 of 16 DQs. ECClogSector2 and ECCposIO2 are also updated at boot loading. FF06h, default = 0000h 15 14 13 12 11 10 9 8 7 6 Reserved(0000000000) 5 4 ECClogSector2 52 3 2 1 ECCposIO2 0 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY 2.8.33 ECC Result of 4th Selected Sector, Main Area Data Register FF07h (R) This Read register shows the Error Correction result for the 4th selected sector of the main area data. ECCposWord3 is the error position address in the Main Area data of 256 words. ECCposIO3 is the error position address which selects 1 of 16 DQs. ECCposWord3 and ECCposIO3 are also updated at boot loading. FF07h, default = 0000h 15 14 13 12 11 10 9 8 Reserved(0000) 7 6 5 4 3 ECCposWord3 2 1 0 ECCposIO3 2.8.34 ECC Result of 4th Selected Sector, Spare Area Data Register FF08h (R) This Read register shows the Error Correction result for the 4th selected sector of the spare area data. ECClogSector3 is the error position address for 1.5 words of 2nd and 3rd words in the spare area. ECCposIO3 is the error position address which selects 1 of 16 DQs. ECClogSector3 and ECCposIO3 are also updated at boot loading. FF08h, default = 0000h 15 14 13 12 11 10 9 8 7 6 Reserved(0000000000) 5 4 ECClogSector3 3 2 ECCposIO3 ECC Log Sector ECClogSector0~ECClogSector3 indicates the error position in the 2nd word and LSB of 3rd word in the spare area. Refer to note 2 in chapter 2.7.2 ECClogSector Information [5:4] ECClogSector Error Position 00 2nd word 01 3rd word 10, 11 Reserved 53 1 0 OneNAND512(KFG1216x2A-xxB5) 3.0 FLASH MEMORY DEVICE OPERATION This section of the datasheet discusses the operation of the OneNAND device. It is followed by AC/DC Characteristics and Timing Diagrams which may be consulted for further information. The OneNAND supports either a command-based or a register-based interface for performing operations on the device including reading device ID, writing data to buffer etc. The command-based interface is active in the boot partition. Commands can only be written with a boot area address. Boot area data is only returned if no command has been issued prior to the read. When reading and programming the OneNAND, data handling is data unit-based. One data is read at the time from NAND Flash array. 3.1 Command Based Operation The command-based interface is active in the boot partition. Commands can only be written with a boot area address. Boot area data is only returned if no command has been issued prior to the read. The entire address range, except for the boot area, can be used for the data buffer. All commands are written to the boot partition. Writes outside the boot partition are treated as normal writes to the buffers or registers. The command consists of one or more cycles depending on the command. After completion of the command the device starts its execution. Writing incorrect information including address and data to the boot partition or writing an improper command will terminate the previous command sequence and make the device enter the ready status. The defined valid command sequences are stated in Command Sequences Table. Command Sequences Command Definition Read Data from Buffer Write Data to Buffer Reset OneNAND Load Data into Buffer3) Read Identification Data 6) Cycles Add 1 Data Add 1 Data Add 1 Data Add 2 Data Add 2 Data 1st cycle DP Data DP Data BP2) 00F0h BP BP 00E0h 0000h4) BP XXXXh5) 0090h Data NOTE: 1) DP(Data Partition) : DataRAM Area 2) BP(Boot Partition) : BootRAM Area [0000h ~ 01FFh, 8000h ~ 800Fh] 3) Load Data into Buffer operation is available within a block(128KB) 4) Load 2KB unit into DataRAM0. Current Start address(FPA) is automatically incremented by 2KB unit after the load. 5) 0000h -> Data is Manufacturer ID 0001h -> Data is Device ID 0002h -> Current Block Write Protection Status 6) WE toggling can terminate ’Read Identification Data’ operation. 54 2nd cycle 1) OneNAND512(KFG1216x2A-xxB5) 3.1.1 FLASH MEMORY Reading Data From Buffer The buffer memory can be read by addressing a Read to the desired buffer area. 3.1.2 Writing Data to Buffer The buffer memory can be written to by addressing a Write to a desired buffer area. 3.1.3 Reset OneNAND Command The Reset command is given by writing 00F0h to the boot partition address. Reset will return all default values into the device. 3.1.4 Load Data Into Buffer Command Load Data into Buffer command is a two-cycle command. Two sequential designated command activates this operation. Sequentially writing 00E0h and 0000h to the boot partition [0000h~01FFh, 8000h~800Fh] will load one page to DataRAM0. This operation refers to FBA and FPA. FSA, BSA, and BSC are not considered. At the end of this operation, FPA will be automatically increased by 1. So continuous issue of this command will sequentially load data in next page to DataRAM0. This page address increment is restricted within a block. The default value of FBA and FPA is 0. Therefore, initial issue of this command after power on will load the first page of memory, which is usually boot code. 3.1.5 Read Identification Data Command The Read Identification Data command consists of two cycles. It gives out the devices identification data according to the given address. The first cycle is 0090h to the boot partition address and second cycle is read from the addresses specified in Identification Data Description Table. Identification Data Description Address Data Out 0000h Manufacturer ID : 00ECh 0001h Device ID : refer to chapter 2.8.3 0002h Current Block Write Protection Status 1) Note 1) To read the write protection status, FBA has to be set before issuing this command. 55 OneNAND512(KFG1216x2A-xxB5) 3.2 FLASH MEMORY Device Bus Operation The device bus operations are shown in the table below. Operation CE OE WE ADD0~15 DQ0~15 RP CLK AVD Standby H X X X High-Z H X X Warm Reset X X X X High-Z L X X Asynchronous Write L H L Add. In Data In H L X Asynchronous Read L L H Add. In Data Out H L Load Initial Burst Address L H H Add. In X H Burst Read L L H X Burst Data Out H Terminate Burst Read Cycle H X H X High-Z H X X Terminate Burst Read Cycle via RP X X X X High-Z L X X H H Add In High-Z H Terminate Current Burst Read Cycle and Start New Burst Read Cycle Note : L=VIL (Low), H=VIH (High), X=Don’t Care. 56 or L X OneNAND512(KFG1216x2A-xxB5) 3.3 FLASH MEMORY Reset Mode Operation The One NAND has 4 reset modes: Cold/Warm/Hot Reset, and NAND Flash Array Reset. Section 3.3 discusses the operation of these reset modes. The Register Reset Table shows the which registers are affected by the various types or Reset operations. Internal Register Reset Table Internal Registers Default Cold Reset Warm Reset (RP) Hot Hot NAND Flash Reset Reset Reset(00F0h) (00F3h) (BP-F0) F000h Manufacturer ID Register (R) 00ECh N/A N/A N/A N/A F001h Device ID Register (R): OneNAND (Note 3) N/A N/A N/A N/A F002h Version ID Register (R): N/A N/A N/A N/A N/A N/A F003h Data Buffer size Register (R) 0800h N/A N/A N/A N/A F004h Boot Buffer size Register (R) 0200h N/A N/A N/A N/A F005h Amount of Buffers Register (R) 0201h N/A N/A N/A N/A F006h Technology Register (R) 0000h N/A N/A N/A N/A F100h Start Address1 Register (R/W): FBA 0000h 0000h 0000h 0000h N/A F101h Start Address2 Register (R/W): Reserved 0000h 0000h 0000h 0000h N/A F102h Start Address3 Register (R/W): FCBA 0000h 0000h 0000h 0000h N/A F103h Start Address4 Register (R/W): FCPA, FCSA 0000h 0000h 0000h 0000h N/A F107h Start Address8 Register (R/W): FPA, FSA 0000h 0000h 0000h 0000h N/A F200h Start Buffer Register (R/W): BSA, BSC 0000h 0000h 0000h 0000h N/A F220h Command Register (R/W) 0000h 0000h 0000h 0000h N/A F221h System Configuration 1 Register (R/W) 40C0h 40C0h O (Note1) O (Note1) N/A F240h Controller Status Register (R) 0000h 0000h 0000h 0000h N/A F241h Interrupt Status Register (R/W) - 8080h 8010h 8010h N/A F24Ch Start Block Address (R/W) 0000h 0000h 0000h N/A N/A F24Dh End Block Address: N/A N/A N/A N/A N/A N/A F24Eh NAND Flash Write Protection Status (R) 0002h 0002h 0002h N/A N/A FF00h ECC Status Register (R) (Note2) 0000h 0000h 0000h 0000h N/A FF01h ECC Result of Sector 0 Main area data Register(R) 0000h 0000h 0000h 0000h N/A FF02h ECC Result of Sector 0 Spare area data Register (R) 0000h 0000h 0000h 0000h N/A FF03h ECC Result of Sector 1 Main area data Register(R) 0000h 0000h 0000h 0000h N/A FF04h ECC Result of Sector 1 Spare area data Register (R) 0000h 0000h 0000h 0000h N/A FF05h ECC Result of Sector 2 Main area data Register(R) 0000h 0000h 0000h 0000h N/A FF06h ECC Result of Sector 2 Spare area data Register (R) 0000h 0000h 0000h 0000h N/A FF07h ECC Result of Sector 3 Main area data Register(R) 0000h 0000h 0000h 0000h N/A FF08h ECC Result of Sector 3 Spare area data Register (R) 0000h 0000h 0000h 0000h N/A NOTE: 1) RDYpol, INTpol, IOBE is reset by Cold reset. The other bits are reset by Cold/Warm/Hot reset. 2) ECC Status Register & ECC Result Registers are reset when any command is issued. 3) Refer to Device ID Register F001h. 57 OneNAND512(KFG1216x2A-xxB5) 3.3.1 FLASH MEMORY Cold Reset Mode Operation See Timing Diagram 6.11 At system power-up, the voltage detector in the device detects the rising edge of Vcc and releases an internal power-up reset signal. This triggers bootcode loading. Bootcode loading means that the boot loader in the device copies designated sized data (1KB) from the beginning of memory into the BootRAM. This sequence is the Cold Reset of OneNAND. The POR(Power On Reset) triggering level is typically 1.5V. Boot code copy operation activates 400us after POR. Therefore, the system power should reach 1.7V within 400us from the POR triggering level for bootcode data to be valid. For 2.65V and 3.3V device, POR level is typically 1.8V and system power should reach 2.2V within 400us. It takes approximately 70us to copy 1KB of bootcode. Upon completion of loading into the BootRAM, it is available to be read by the host. The INT pin is not available until after IOBE = 1 and IOBE bit can be changed by host. 3.3.2 Warm Reset Mode Operation See Timing Diagrams 6.12 A Warm Reset means that the host resets the device by using the /RP pin. When the a /RP low is issued, the device logic stops all current operations and executes internal reset operation and resets current NAND Flash core operation synchronized with the falling edge of /RP. During an Internal Reset Operation, the device initializes internal registers and makes output signals go to default status. The BufferRAM data is kept unchanged after Warm/Hot reset operations. The device guarantees the logic reset operation in case /RP pulse is longer than tRP min. (200ns). The device may reset if tRP < tRP min(200ns), but this is not guaranteed. Warm reset will abort the current NAND Flash core operation. During a warm reset, the content of memory cells being altered is no longer valid as the data will be partially programmed or erased. Warm reset has no effect on contents of BootRAM and DataRAM. 3.3.3 Hot Reset Mode Operation See Timing Diagram 6.13 A Hot Reset means that the host resets the device by Reset command. The reset command can be either Command based or Register Based. Upon receiving the Reset command, the device logic stops all current operation and executes an internal reset operation and resets the current NAND Flash core operation. During an Internal Reset Operation, the device initializes internal registers and makes output signals go to default status. The BufferRAM data is kept unchanged after Warm/Hot reset operations. Hot reset will abort the current NAND Flash core operation. During a Hot reset, the content of memory cells being altered is no longer valid as the data will be partially programmed or erased. Hot reset has no effect on contents of BootRAM and DataRAM. 3.3.4 NAND Flash Core Reset Mode Operation See Timing Diagram 6.14 The Host can reset the NAND Flash Core operation by issuing a NAND Flash Core reset command. NAND Flash core reset will abort the current NAND Flash core operation. During a NAND Flash core reset, the content of memory cells being altered is no longer valid as the data will be partially programmed or erased. Hot reset has no effect on contents of BootRAM and DataRAM, as well as register values. 58 OneNAND512(KFG1216x2A-xxB5) 3.4 FLASH MEMORY Write Protection Operation The OneNAND can be write-protected to prevent re-programming or erasure of data. The areas of write-protection are the BootRAM, and the NAND Flash Array. 3.4.1 BootRAM Write Protection Operation At system power-up, voltage detector in the device detects the rising edge of Vcc and releases the internal power-up reset signal which triggers bootcode loading. And the designated size data(1KB) is copied from the first page of the first block in the NAND flash array to the BootRAM. After the bootcode loading is completed, the BootRAM is always locked to protect the boot code from the accidental write. 3.4.2 NAND Flash Array Write Protection Operation The device has both hardware and software write protection of the NAND Flash array. Hardware Write Protection Operation The hardware write protection operation is implemented by executing a Cold or Warm Reset. On power up, the NAND Flash Array is in its default, locked state. The entire NAND Flash array goes to a locked state after a Cold or Warm Reset. Software Write Protection Operation The software write protection operation is implemented by writing a Lock command (002Ah) or a Lock-tight command (002Ch) to command register (F220h). Lock (002Ah) and Lock-tight (002Ch) commands write protects the block defined in the Start Block Address Register F24Ch. 3.4.3 NAND Array Write Protection States There are three lock states in the NAND Array: unlocked, locked, and locked-tight. OneNAND512 supports lock/unlock/lock-tight by one block, so each block should be locked/unlocked/locked-tight individually. Write Protection Status The current block Write Protection status can be read in NAND Flash Write Protection Status Register(F24Eh). There are three bits US, LS, LTS -, which are not cleared by hot reset. These Write Protection status registers are updated when FBA is set, and when Write Protection command is entered. The followings summarize locking status. example) In default, [2:0] values are 010. -> If host executes unlock block operation, then [2:0] values turn to 100. -> If host executes lock-tight block operation, then [2:0] values turn to 001. 59 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY 3.4.3.1 Unlocked NAND Array Write Protection State An Unlocked block can be programmed or erased. The status of an unlocked block can be changed to locked or locked-tight using the appropriate software command. (locked-tight state can be achieved via lock-tight command which follows lock command) Only one block can be released from lock state to unlock state with Unlock command and addresses. The unlocked block can be changed with new lock command. Therefore, each block has its own lock/unlock/lock-tight state. Unlocked Unlock Command Sequence: Start block address+Unlock block command (0023h) 3.4.3.2 Locked NAND Array Write Protection State A Locked block cannot be programmed or erased. All blocks default to a locked state following a Cold or Warm Reset. Unlocked blocks can be changed to locked using the Lock block command. The status of a locked block can be changed to unlocked or locked-tight using the appropriate software command. Locked Lock Command Sequence: Start block address+Lock block command (002Ah) 60 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY 3.4.3.3 Locked-tight NAND Array Write Protection State A block that is in a locked-tight state can only be changed to lock state after a Cold or Warm Reset. Unlock and Lock command sequences will not affect its state. This is an added level of write protection security. A block must first be set to a locked state before it can be changed to locked-tight using the Lock-tight command. locked-tight blocks will revert to a locked state following a Cold or Warm Reset. Locked-tight Lock-Tight Command Sequence: Start block address+Lock-tight block command (002Ch) 3.4.4 NAND Flash Array Write Protection State Diagram Lock RP pin: High & Start block address Lock block Command or Cold reset or Warm reset unlock RP pin: High & Start block address +Unlock block Command Lock Power On Lock RP pin: High & Start block address +Lock-tight block Command Cold reset or Warm reset Lock Lock-tight Lock 61 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY Data Protection Operation Flow Diagram Start Write ’SBA’ of Flash Add: F24Ch DQ=SBA Write 0 to interrupt register Add: F241h DQ=0000h Write ’lock/unlock/lock-tight’ Command Add: F220h DQ=002Ah/0023h/002Ch Wait for INT register low to high transition Add: F241h DQ[15]=INT Lock/Unlock/Lock-Tight completed Note) Samsung strongly recommend to follow the above flow chart 62 OneNAND512(KFG1216x2A-xxB5) 3.5 FLASH MEMORY Data Protection During Power Down Operation See Timing Diagram 6.15 The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector disables all functions whenever Vcc is below POR level, about 1.3V. It is recommended that the /RP pin, which provides hardware protection, should be kept at VIL before power-down. 3.6 Load Operation See Timing Diagram 6.8 The Load operation is initiated by setting up the start address from which the data is to be loaded. The Load command is issued in order to initiate the load. During a Load operation, the device: -Transfers the data from NAND Flash array into the BufferRAM -ECC is checked and any detected and corrected error is reported in the status response as well as any unrecoverable error. Once the BufferRAM has been filled, an interrupt is issued to the host so that the contents of the BufferRAM can be read. The read from the BufferRAM can be an asynchronous read mode or synchronous read mode. The status information related to load operation can be checked by the host if required. The device has a dual data buffer memory architecture (DataRAM0, DataRAM1), each 2KB in size. Each DataRAM buffer has 4 Sectors. The device is capable of independent and simultaneous data-read operation from one data buffer and data-load operation to the other data buffer. Refer to the information for more details in section 3.12.1, "Read-While-Load Operation". Load Operation Flow Chart Diagram Start Write ’FBA’ of Flash Add: F100h DQ=FBA Write ’Load’ Command Add: F220h DQ=0000h or 0013h Wait for INT register low to high transition Write ’FPA, FSA’ of Flash Add: F107h DQ=FPA, FSA Add: F241h DQ[15]=INT Write ’BSA, BSC’ of DataRAM Add: F200h DQ=BSA, BSC Read Controller Status Register Add: F240h DQ[10]=Error Write 0 to interrupt register Add: F241h DQ=0000h DQ[10]=0? YES Host reads data from DataRAM Read completed 63 NO Map Out OneNAND512(KFG1216x2A-xxB5) 3.7 FLASH MEMORY Read Operation See Timing Diagrams 6.1, 6.2, 6.3, 6.4, 6.5 and 6.6 The device has two read modes; Asynchronous Read and Synchronous Burst Read. The initial state machine automatically sets the device into the Asynchronous Read Mode (RM=0) to prevent the spurious altering of memory content upon device power up or after a Hardware reset. No commands are required to retrieve data in Asynchronous Read Mode. The Synchronous Read Mode is enabled by setting RM bit of System Configuration1 Register (F221h) to Synchronous Read Mode (RM=1). See Section 2.8.19 for more information about System Configuration1 Register. 3.7.1 Asynchronous Read Mode Operation (RM=0) See Timing Diagrams 6.3, 6.4, 6.5 and 6.6 In an Asynchronous Read Mode, data is output with respect to a logic input, /AVD. Output data will appear on DQ15-DQ0 in when a valid address is asserted on A15-A0 while driving /AVD and /CE to VIL. / WE is held at VIH. The function of the /AVD signal is to latch the valid address. Address access time from /AVD low (tAA) is equal to the delay from valid addresses to valid output data. The Chip Enable access time (tCE) is equal to the delay from the falling edge of /CE to valid data at the outputs. The Output Enable access time (tOE) is the delay from the falling edge of /OE to valid data at the output. 3.7.2 Synchronous Read Mode Operation (RM=1) See Timing Diagrams 6.1 and 6.2 In a Synchronous Read Mode, data is output with respect to a clock input. The device is capable of a continuous linear burst operation and a fixed-length linear burst operation of a preset length. Burst address sequences for continuous and fixed-length burst operations are shown in the table below. Burst Address Sequences Wrap around Burst Address Sequence(Decimal) Start Addr. Continuous Burst 4-word Burst 8-word Burst 16-word Burst 32-word Burst 0 0-1-2-3-4-5-6... 0-1-2-3-0... 0-1-2-3-4-5-6-7-0... 0-1-2-3-4-....-13-14-15-0... 0-1-2-3-4-....-29-30-31-0... 1 1-2-3-4-5-6-7... 1-2-3-0-1... 1-2-3-4-5-6-7-0-1... 1-2-3-4-5-....-14-15-0-1... 1-2-3-4-5-....-30-31-0-1... 2 2-3-4-5-6-7-8... 2-3-0-1-2... 2-3-4-5-6-7-0-1-2... 2-3-4-5-6-....-15-0-1-2... 2-3-4-5-6-....-31-0-1-2... . . . . . . . . . . . . In the burst mode, the initial word will be output asynchronously, regardless of BRL. While the following words will be determined by BRL value. The latency is determined by the host based on the BRL bit setting in the System Configuration 1 Register. The default BRL is 4 latency cycles. At clock frequencies of 40MHz or lower, latency cycles can be reduced to 3. BRL can be set up to 7 latency cycles. The BRL registers can be read during a burst read mode by using the /AVD signal with an address. 64 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY 3.7.2.1 Continuous Linear Burst Read Operation See Timing Diagram 6.2 First Clock Cycle The initial word is output at tIAA after the rising edge of the first CLK cycle. The RDY output indicates the initial word is ready to the system by pulsing high. If the device is accessed synchronously while it is set to Asynchronous Read Mode, the first data can still be read out. Subsequent Clock Cycles Subsequent words are output (Burst Access Time from Valid Clock to Output) tBA after the rising edge of each successive clock cycle, which automatically increments the internal address counter. Terminating Burst Read The device will continue to output sequential burst data until the system asserts /CE high, or /RP low, wrapping around until it reaches the designated address (see Section 2.7.3 for address map information). Alternately, a Cold/Warm/Hot Reset, asserting /CE high, or a /WE low pulse will terminate the burst read operation. Synchronous Read Boundary Division Add.map(word order) BootRAM Main(0.5Kw) 0000h~01FFh BrfferRAM0 Main(1Kw) 0200h~05FFh BufferRAM1 Main(1Kw) 0600h~09FFh Reserved Main 0A00h~7FFFh BootRAM Spare(16w) 8000H~800Fh BufferRAM0 Spare(32w) 8010h~802Fh BufferRAM1 Spare(32w) 8030h~804Fh Reserved Spare 8050h~8FFFh Reserved Register 9000h~EFFFh Register(4Kw) F000h~FFFFh Not Support Not Support Not Support Not Support Not Support * Reserved area is not available on Synchronous read 3.7.2.2 4-, 8-, 16-, 32-Word Linear Burst Read Operation See Timing Diagram 6.1 An alternate Burst Read Mode enables a fixed number of words to be read from consecutive address. The device supports a burst read from consecutive addresses of 4-, 8-, 16-, and 32-words with a linear-wrap around. When the last word in the burst has been reached, /CE and /OE are asserted high. In this mode, the start address for the burst read can be any address of the address map with one exception. The device does not support a 32-word linear burst read on the spare area of the BufferRAM. 65 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY 3.7.2.3 Programmable Burst Read Latency Operation See Timing Diagrams 6.1 and 6.2 Upon power up, the number of initial clock cycles from Valid Address (/AVD) to initial data defaults to four clocks. The number of clock cycles (n) which are inserted after the clock which is latching the address. The host can read the first data with the (n+1)th rising edge. The number of total initial access cycles is programmable from three to seven cycles. After the number of programmed burst clock cycles is reached, the rising edge of the next clock cycle triggers the next burst data. Four Clock Burst Read Latency (default condition) Rising edge of the clock cycle following last read latency triggers next burst data ≈ CE CLK 0 1 2 3 ≈ -1 4 ≈ AVD tBA Valid Address A0: A15 D6 D7 D0 D1 D2 D3 ≈ DQ0: DQ15 D7 D0 tIAA Hi-Z 3.7.3 ≈ RDY ≈ tRDYS OE tRDYA Hi-Z Handshaking Operation The handshaking feature allows the host system to simply monitor the RDY signal from the device to determine when the initial word of burst data is ready to be read. To set the number of initial cycles for optimal burst mode, the host should use the programmable burst read latency configuration (see Section 2.8.19, "System Configuration1 Register"). The rising edge of RDY which is derived from one cycles ahead of data fetch clock indicates the initial word of valid burst data. 66 OneNAND512(KFG1216x2A-xxB5) 3.7.4 FLASH MEMORY Output Disable Mode Operation When the CE or OE input is at VIH, output from the device is disabled. The outputs are placed in the high impedance state. 3.8 Program Operation See Timing Diagram 6.9 The Program operation is used to program data from the on-chip BufferRAMs into the NAND FLASH memory array. The device has two 2KB data buffers, each 1 Page (2KB + 64B) in size. Each page has 4 sectors of 512B each main area and 16B spare area. The device can be programmed in units of 1~4 sectors. The architecture of the DataRAMs permits a simultaneous data-write operation from the Host to one of data buffers and a program operation from the other data buffer to the NAND Flash Array memory. Refer to Section 3.12.2, "Write While Program Operation", for more information. Addressing for program operation Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of the block to MSB (most significant bit) pages of the block. Random page address programming is prohibited. Page 63 (64) Page 63 : Page 31 : (32) Page 31 : Page 2 Page 1 Page 0 (1) : (3) (2) (1) Page 2 Page 1 Page 0 Data register (3) (32) (2) Data register From the LSB page to MSB page DATA IN: Data (1) (64) Ex.) Random page program (Prohibition) Data (64) DATA IN: Data (1) 67 Data (64) OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY Program Operation Flow Diagram Write 0 to interrupt register Add: F241h DQ=0000h Start Write Data into DataRAM2) ADD: DP DQ=Data-in Write ’Program’ Command Add: F220h DQ=0080h or 001Ah Data Input Completed? YES NO Wait for INT register low to high transition Add: F241h DQ[15]=INT Write ’FBA’ of Flash Add: F100h DQ=FBA Read Controller Status Register Write ’FPA, FSA’ of Flash Add: F107h DQ=FPA, FSA Add: F240h DQ[10]=Error Write ’BSA, BSC’ of DataRAM Add: F200h DQ=BSA, BSC DQ[10]=0? YES Program completed * Note NO Program Error : If program operation results in an error, map out the block including the page in error and copy the target data to another block. 1) This must happen before data input 2) Data input could be done anywhere between "Start" and "Write Program Command". During the execution of the Internal Program Routine, the host is not required to provide any further controls or timings. Furthermore, all commands, except a Reset command, will be ignored. A reset during a program operation will cause data corruption at the corresponding location. If a program error is detected at the completion of the Internal Program Routine, map out the block, including the page in error, and copy the target data to another block. An error is signaled if DQ10 = "1" of Controller Status Register(F240h) . Data input from the Host to the DataRAM can be done at any time during the Internal Program Routine after "Start" but before the "Write Program Command" is written. 68 OneNAND512(KFG1216x2A-xxB5) 3.9 FLASH MEMORY Copy-Back Program Operation The Copy-Back program is configured to quickly rewrite data stored in one page without utilizing memory other than OneNAND. Since the time-consuming cycles of serial access and re-loading cycles are removed, the system performance is improved. The benefit is especially obvious when a portion of block is updated and the rest of the block also need to be copied to the newly assigned free block. Data from the source page is saved in one of the on-chip DataRAM buffers and then programmed directly into the destination page. The DataRAM overwrites the previous data using the Buffer Sector Address (BSA) and Buffer Sector Count (BSC). The Copy-Back Program Operation does this by performing sequential page-reads without a serial access and executing a copy-program using the address of the destination page. Copy-Back Program Operation Flow Chart Start Write ’FBA’ of Flash Add: F100h DQ=FBA Write ’Copy-back Program’ command Add: F220h DQ=001Bh Wait for INT register low to high transition Write ’FPA, FSA’ of Flash Add: F107h DQ=FPA, FSA Add: F241h DQ[15]=INT Write ’FCBA’ of Flash Add: F102h DQ=FCBA Read Controller Status Register Add: F240h DQ[10]=Error Write ’FCPA, FCSA’ of Flash Add: F103h DQ=FCPA, FCSA Write ’BSA, BSC’ of DataRAM Add: F200h DQ=BSA, BSC 1) DQ[10]=0? YES Copy back completed NO Copy back Error Write 0 to interrupt register Add: F241h DQ=0000h * Note : If program operation results in an error, map out the block including the page in error and copy the target data to another block. 1) Selected DataRAM by BSA & BSC is used for Copy back operation, so previous data is overwritten. 2) FBA, FPA and FSA should be input prior to FCBA, FCPA and FCSA. 69 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY The Copy-Back steps shown in the flow chart are: • Data is read from the NAND Array using Flash Block Address (FBA), Flash Page Address (FPA) and Flash Sector Address (FSA). FBA, FPA, and FSA identify the source address to read data from NAND Flash array. • The BufferRAM Sector Count (BSC) and BufferRAM Sector Address (BSA) identifies how many sectors and the location of the sectors in DataRAM that are used. • The destination address in the NAND Array is written using the Flash Copy-Back Block Address (FCBA), Flash Copy-Back Page Address (FCPA), and Flash Copy-Back Sector Address (FCSA). • The Copy-Back Program command is issued to start programming. • Upon completion of copy-back programming to the destination page address, the Host checks the status to see if the operation was successfully completed. If there was an error, map out the block including the page in error and copy the target data to another block. 70 OneNAND512(KFG1216x2A-xxB5) 3.9.1 FLASH MEMORY Copy-Back Program Operation with Random Data Input The Copy-Back Program Operation with Random Data Input in OneNAND consists of 2 phase, Load data into DataRAM, Modify data and program into designated page. Data from the source page is saved in one of the on-chip DataRAM buffers and modified by the host, then programmed into the destination page. As shown in the flow chart, data modification is possible upon completion of load operation. ECC is also available at the end of load operation. Therefore, using hardware ECC of OneNAND, accumulation of 1 bit error can be avoided. Copy-Back Program Operation with Random Data Input will be effectively utilized at modifying certain bit, byte, word, or sector of source page to destination page while it is being copied. Copy-Back Program Operation with Random Data Input Flow Chart Start Write ’FBA’ of Flash Add: F100h DQ=FBA Write ’FPA, FSA’ of Flash Add: F107h DQ=FPA, FSA Write ’BSA, BSC’ of DataRAM Add: F200h DQ=BSA, BSC DQ[10]=0? NO Map Out YES Random Data Input Add: Random Address in Selected DataRAM DQ=Data Write ’FBA’ of Flash Add: F100h DQ=FBA Write 0 to interrupt register Add: F241h DQ=0000h Write ’Load’ Command Add: F220h DQ=0000h or 0013h Write ’FPA, FSA’ of Flash Add: F107h DQ=FPA, FSA Write 0 to interrupt register Add: F241h DQ=0000h Write ’Program’ Command Wait for INT register low to high transition Add: F241h DQ[15]=INT Read Controller Status Register Add: F240h DQ[10]=Error Add: F220h DQ=0080h or 001Ah Wait for INT register low to high transition Add: F241h DQ[15]=INT Read Controller Status Register Add: F240h DQ[10]=Error DQ[10]=0? YES Copy back completed 71 NO Copy back Error OneNAND512(KFG1216x2A-xxB5) 3.10 FLASH MEMORY Erase Operation There are multiple methods for erasing data in the device including Block Erase and Multi-Block Erase. 3.10.1 Block Erase Operation See Timing Diagram 6.10 The device can be erased one block at a time. To erase a block is to write all 1's into the desired memory block by executing the Internal Erase Routine. All previous data is lost. Block Erase Operation Flow Chart Start Write ’FBA’ of Flash Add: F100h DQ=FBA Write 0 to interrupt register Add: F241h DQ=0000h Write ’Erase’ Command Add: F220h DQ=0094h Wait for INT register low to high transition Add: F241h DQ=[15]=INT Read Controller Status Register Add: F240h DQ[10]=Error DQ[10]=0? YES NO Erase completed Erase Error * : If erase operation results in an error, map out the failing block and replace it with another block. 72 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY In order to perform the Internal Erase Routine, the following command sequence is necessary. • The Host sets the block address of the memory location. • The Erase Command initiates the Internal Erase Routine. During the execution of the Routine, the host is not required to provide further controls or timings. During the Internal erase routine, all commands, except the Reset command and Erase Suspend Command, written to the device will be ignored. A reset during an erase operation will cause data corruption at the corresponding location. 3.10.2 Multi-Block Erase Operation See Timing Diagram 6.10 Using Multi-Block Erase, the device can erase up to 64 multiple blocks simultaneously. Multiple blocks can be erased by issuing a Multi-Block Erase command and writing the block address of the memory location to be erased. The final Flash Block Address (FBA) and Block Erase command initiate the internal multi block erase routine. During a Multi-Block Erase, the OnGo bit of the Controller Status Register is set to '1'(busy) from the time first block address to be latched is written until the actual erase has finished. During block address latch sequence, issuing of other commands except Block Erase, Multi Block Erase, and Erase suspend at INT=High will abort the current operation. So to speak, It will cancel the previously latched addresses of Multi Block Erase Operation. On the other hand, Other command issue at INT=low will be ignored. A reset during an erase operation will cause data corruption at the address location being operated on during the reset. Despite a failed block during Multi-Block Erase operation, the device will continue the erase operation until all other specified blocks are erased. Erase Suspend Command issue during Multi Block Erase Address latch sequence is prohibited. Locked Blocks If there are locked blocks in the specified range, the Multi-Block Erase operation works as the follows. Case 1: All specified blocks except BA(2) will be erased. [BA(1)+0095h] + [BA((2), locked))+0095h] + ... + [BA(N-1)+0095h] + [BA(N)+0094h] Case 2: Multi-Block Erase Operation is suspended and fails to start if the last Block Erase command is put together with the locked block address until right command and address input are issued. [BA(1)+0095h] + [BA(2)+0095h] + ... + [BA(N-1)+0095h] + [BA((N), locked))+0094h] Case 3: All specified blocks except BA(N) are erased. [BA(1)+0095h] + [BA(2)+0095h] + ... + [BA(N-1)+0095h] + [BA((N, locked))+0094h] + [BA(N+1)+0094h] 73 OneNAND512(KFG1216x2A-xxB5) 3.10.3 FLASH MEMORY Multi-Block Erase Verify Read Operation After a Multi-Block Erase Operation, verify Erase Operation result of each block with Multi-Block Erase Verify Command combined with address of each block. If a failed address is identified, it must be managed in firmware. Multi Block Erase/ Multi Block Erase Verify Read Flow Chart Read Controller Status Register Write ’FBA’ of Flash Add: F100h DQ=FBA Start Add: F240h DQ[10]=Error Write ’FBA’ of Flash Add: F100h DQ=FBA Write 0 to interrupt register Add: F241h DQ=0000h DQ[10]=0? Write 0 to interrupt register Add: F241h DQ=0000h NO Write ’Block Erase Command’ YES Add: F220h DQ=0094h Erase completed Write ’Multi Block Erase’ Command Wait for INT register low to high transition Add: F220h DQ=0095h Erase Error Add: F241h DQ=[15]=INT NO Wait for INT register low to high transition Write ’FBA’ of Flash Add: F100h DQ=FBA Add: F241h DQ=[15]=INT Final Multi Block Erase? NO Final Multi Block Erase Address? YES Multi Block Erase completed Write 0 to interrupt register Add: F241h DQ=0000h Multi Block Erase Verify Read YES Write ’Multi Block Erase Verify Read Command’ Add: F220h DQ=0071h Wait for INT register low to high transition Add: F241h DQ=[15]=INT 74 OneNAND512(KFG1216x2A-xxB5) 3.10.4 FLASH MEMORY Erase Suspend / Erase Resume Operation The Erase Suspend/Erase Resume Commands interrupt and restart a Block Erase or Multi-Block Erase operation so that user may perform another urgent operation on the block that is not being designated by Erase/Multi-Block Erase Operation. Erase Suspend During a Block Erase Operation When Erase Suspend command is written during a Block Erase or Multi-Block Erase operation, the device requires a maximum of 500us to suspend erase operation. Erase Suspend Command issue during Block Address latch sequence is prohibited. After the erase operation has been suspended, the device is ready for the next operation including a load, program, copy-back program, Lock, Unlock, Lock-tight, Hot Reset, NAND Flash Core Reset, Command Based Reset, Multi-Block Erase Read Verity, or OTP Access. The subsequent operation can be to any block that was NOT being erased. A special case arises pertaining Erase Suspend to the OTP. A Reset command is used to exit from the OTP Access mode. If the Reset-triggered exit from the OTP Access Mode happens during an Erase Suspend Operation, the erase routine could fail. Therefore to exit from the OTP Access Mode without suspending the erase operation stop, a 'NAND Flash Core Reset' command should be issued. For the duration of the Erase Suspend period the following commands are not accepted: • Block Erase/Multi-Block Erase/Erase Suspend Erase Suspend and Erase Resume Operation Flow Chart Start Write 0 to interrupt register Add: F241h DQ=0000h Write 0 to interrupt register Add: F241h DQ=0000h Write ’Erase Resume Command’ Add: F220h DQ=0030h Write ’Erase Suspend Command’ 1) Add: F220h DQ=00B0h Wait for INT register low to high transition for 500us Add: F241h DQ=[15]=INT Another Operation * Note Wait for INT register low to high transition Add: F241h DQ=[15]=INT Check Controller Status Register in case of Block Erase Do Multi Block Erase Verify Read in case of Multi Block Erase * Another Operation ; Load, Program Copy-back Program, OTP Access2), Hot Reset, Flash Reset, CMD Reset, Multi Block Erase Verify, Lock, Lock-tight, Unlock 1) Erase Suspend command input is prohibited during Multi Block Erase address latch period. 2) If OTP access mode exit happens with Reset operation during Erase Suspend mode, Reset operation could hurt the erase operation. So if a user wants to exit from OTP access mode without the erase operation stop, Reset NAND Flash Core command should be used. 75 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY Erase Resume When the Erase Resume command is executed, the Block Erase will restart. The Erase Resume operation does not actually resume the erase, but starts it again from the beginning. When an Erase Suspend or Erase Resume command is executed, the addresses are in Don't Care state. 3.11 OTP Operation On Block of the NAND Flash Array memory is reserved as a One-Time Programmable Block memory area. The OTP block can be read, programmed and locked using the same operations as any other NAND Flash Array memory block. OTP block cannot be erased. OTP block is fully-guaranteed to be a valid block. Entering the OTP Block The OTP block is separately accessible from the rest of the NAND Flash Array by using the OTP Access command instead of the Flash Block Address (FBA). Exiting the OTP Block To exit the OTP Access Mode, a Cold-, Warm-, Hot-, or NAND Flash Core Reset operation is performed. Exiting the OTP Block during an Erase Operation If the Reset-triggered exit from the OTP Access Mode happens during an Erase Suspend Operation, the erase routine could fail. Therefore to exit from the OTP Access Mode without suspending the erase operation stop, a 'NAND Flash Core Reset' command should be issued. The OTP Block Page Assignments OTP area is one block size (128KB+4KB, 64 Pages) and is divided into two areas. The 10-page User Area is available as an OTP storage area. The 54-page Manufacturer Area is programmed by the manufacturer prior to shipping the device to the user. OTP Block Page Allocation Information Area Page Use User 0 ~ 9 (10 pages) Designated as user area Manufacturer 10 ~ 63 (54 pages) Used by the device manufacturer 76 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY OTP Area Structure Page:2KB+64B Sector(main area):512B Sector(spare area):16B One Block: 64pages 128KB+4KB Manufacturer Area : 54pages page10 to page63 User Area : 10pages page0 to page9 77 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY 3.11.1 OTP Load Operation An OTP Load Operation accesses the OTP area and transfers identified content from the OTP to the DataRAM on-chip buffer, thus making the OTP contents available to the Host. The OTP area is a separate part of the NAND Flash Array memory. It is accessed by issuing OTP Access command(65h) instead of a Flash Block Address (FBA) command. After being accessed with the OTP Access Command, the contents of OTP memory area are loaded using the same operations as a normal load operation to the NAND Flash Array memory (see section 3.6 for more information). To exit the OTP access mode following an OTP Load Operation, a Cold-, Warm-, Hot-, or NAND Flash Core Reset operation is performed. OTP Read Operation Flow Chart Start Write ’FBA’ of Flash1) Add: F100h DQ=FBA Write 0 to interrupt register Add: F241h DQ=0000h Write ’Load’ Command Add: F220h DQ=0000h or 0013h Write ’OTP Access’ Command Add: F220h DQ=0065h Add: F241h DQ[15]=INT Wait for INT register low to high transition Add: F241h DQ[15]=INT Host reads data from DataRAM Write ’FPA, FSA’ of Flash1) Add: F107h DQ=FPA, FSA OTP Reading completed Write ’BSA, BSC’ of DataRAM Add: F200h DQ=BSA, BSC Write 0 to interrupt register Add: F241h DQ=0000h Wait for INT register low to high transition Do Cold/Warm/Hot /NAND Flash Core Reset OTP Exit Note 1) FBA(NAND Flash Block Address) could be any address. 78 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY 3.11.2 OTP Program Operation An OTP Program Operation accesses the OTP area and programs content from the DataRAM on-chip buffer to the designated page(s) of the OTP. A memory location in the OTP area can be programmed only one time (no erase operation permitted). The OTP area is programmed using the same sequence as normal program operation after being accessed by the command (see section 3.8 for more information). Programming the OTP Area • Issue the OTP Access Command • Write data into the DataRAM (data can be input at anytime between the "Start" and "Write Program" commands • Issue a Flash Block Address (FBA) which is unlocked area address of NAND Flash Array address map. • Issue a Write Program command to program the data from the DataRAM into the OTP • When the OTP programming is complete, do a Cold-, Warm-, Hot-, NAND Flash Core Reset to exit the OTP Access mode. 79 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY OTP Program Operation Flow Chart Write 0 to interrupt register Add: F241h DQ=0000h Start Write ’FBA’ of Flash1) Add: F100h DQ=FBA Write ’FBA’ of Flash Add: F100h DQ=FBA3) Write 0 to interrupt register Add: F241h DQ=0000h Write ’FPA, FSA’ of Flash Add: F107h DQ=FPA, FSA Write ’OTP Access’ Command Add: F220h DQ=0065h Write ’BSA, BSC’ of DataRAM Add: F200h DQ=BSA, BSC Wait for INT register low to high transition Write Program command Add: F241h DQ[15]=INT Add: F220h DQ=0080h or 001Ah Automatically checked Write Data into DataRAM2) Add: DP DQ=Data-in OTPL=0? NO Automatically updated YES Data Input Completed? NO Add: F241h DQ[15]=INT Update Controller Status Register Add: F240h DQ[14]=1(Lock), DQ[10]=1(Error) Read Controller Status Register Wait for INT register low to high transition Add: F240h DQ[10]=0(Pass) Add: F241h DQ[15]=INT OTP Programming completed Read Controller Status Register Wait for INT register low to high transition Add: F240h DQ[10]=1(Error) Do Cold/Warm/Hot /NAND Flash Core reset Do Cold/Warm/Hot /NAND Flash Core reset OTP Exit OTP Exit Note 1) FBA(NAND Flash Block Address) could be any address. 2) Data input could be done anywhere between "Start" and "Write Program Command". 80 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY 3.11.3 OTP Lock Operation Even though the OTP area can only be programmed once without erase capability, it can be locked when the device starts up to prevent any changes from being made. Unlike the main area of the NAND Flash Array memory, once the OTP block is locked, it cannot be unlocked. Locking the OTP Programming to the OTP area can be prevented by locking the OTP area. Locking the OTP area is accomplished by programming XXXCh to 8th word of sector0 of page0 of the spare0 memory area. At device power-up, this word location is checked and if XXXCh is found, the OTPL bit of the Controller Status Register is set to "1", indicating the OTP is locked. When the Program Operation finds that the status of the OTP is locked, the device updates the Error Bit of the Controller Status Register as "1" (fail). OTP Lock Operation Steps • • • • Issue the OTP Access Command Fill data to be programmed into DataRAM (data can be input at anytime between the "Start" and "Write Program" commands) Write 'XXXCH' data into the 8th word of sector0 of page0 of the spare0 memory area of the DataRAM. Issue a Flash Block Address (FBA) to any address in the NAND Flash Array address map. • Issue a Program command to program the data from the DataRAM into the OTP • When the OTP lock is complete, do a Cold Reset to exit the OTP Access mode and update OTP lock bit[6]. • OTP lock bit[6] of the Controller Status Register will be set to "1" and the OTP will be locked. 81 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY OTP Lock Operation Flow Chart Start Write ’FBA’ of Flash1) Add: F100h DQ=FBA Write 0 to interrupt register Add: F241h DQ=0000h Write ’OTP Access’ Command Add: F220h DQ=0065h Write ’FBA’ of Flash Add: F100h DQ=FBA3) Write ’FPA, FSA’ of Flash Add: F107h DQ=0000h Write ’BSA, BSC’ of DataRAM Add: F200h DQ=0001h Write 0 to interrupt register Add: F241h DQ=0000h Wait for INT register low to high transition Write Program command Add: F241h DQ[15]=INT Add: F220h DQ=0080h or 001Ah Write Data into DataRAM2) Add: 8th Word in spare0/sector0/page0 DQ=XXXCh Wait for INT register low to high transition Add: F241h DQ[15]=INT Do Cold reset Automatically updated Update Controller Status Register Add: F240h DQ[6]=1(OTPL) OTP lock completed Note 1) FBA(NAND Flash Block Address) could be any address. 2) Data input could be done anywhere between "Start" and "Write Program Command". 3) FBA should point the unlocked area address among NAND Flash Array address map. 82 OneNAND512(KFG1216x2A-xxB5) 3.12 FLASH MEMORY Dual Operations The device has independent dual data buffers on-chip (except during the Boot Load period) that enables higher performance read and program operation. 3.12.1 Read-While-Load Operation This operation accelerates the read performance of the device by enabling data to be read out by the host from one DataRAM buffer while the other DataRAM buffer is being loaded with data from the NAND Flash Array memory. 1) Data Load Page A 3) Data Load Page B 2) Data Load Data Buffer0 Data Buffer1 2) Data Read 3) Data Read The dual data buffer architecture provides the capability of executing a data-read operation from one of DataRAM buffers during a simultaneous data-load operation from Flash to the other buffer. Simultaneous load and read operation to same data buffer is prohibited. See sections 3.6 and 3.7 for more information on Load and Read Operations. If host sets FBA, FSA, or FPA while loading into designated page, it will fail the internal load operation. Address registers should not be updated until internal operation is completed. 3.12.2 Write-While-Program Operation This operation accelerates the programming performance of the device by enabling data to be written by the host into one DataRAM buffer while the NADN Flash Array memory is being programmed with data from the other DataRAM buffer. Page A Page B 2) Program 3) Program 1) Data Write Data Buffer0 Data Buffer1 3) Data Write 2) Data Write The dual data buffer architecture provides the capability of executing a data-write operation to one DataRAM buffers during simultaneous data-program operation to Flash from the other buffer. Simultaneous program and write operation to same data buffer is prohibited. See sections 3.8 for more information on Program Operation. If host sets FBA, FSA, or FPA while programming into designated page, it will fail the internal program operation. Address registers should not be updated until internal operation is completed. 83 INT OE WE 0~15 DQ 0~15 ADD Flash _add Page A Add_ reg Read While Load Diagram 0000h Int_ reg LD_ CMD CMD_ reg 1) Data Load _DB0 1) Data Load _DB0 Read Status CS_ reg Flash _add Page B Add_ reg Int_reg : Interrupt Register Address Add_reg : Address Register Address Flash_add : Flash Address to be loaded DBn_add : DataRAM Address to be loaded CMD_reg : Command Register Address LD_CMD : Load Command Data Load_DBn : Load Data from NAND Flash Array to DataRAMn CS_reg : Controller Status Register Address Data Read_DBn : Read Data from DBn DBn_radd : DataRAM Address to be read DB0 _add Add_ reg DB1 _add Add_ reg 0000h Int_ reg LD_ CMD CMD_ reg DB0_radd* Data Load 2) _DB1 Data Read _DB0 * Data Load 2) _DB1 OneNAND512(KFG1216x2A-xxB5) 84 FLASH MEMORY INT OE WE 0~15 DQ 0~15 ADD Data Write _DB0 * DB0_wadd* Page A Flash _add 1) Add_ reg Write While Program Diagram 0000h Int_ reg PD_ CMD CMD_ reg Data PGM _PageA Data Write _DB1 * DB1_wadd* Add_reg : Address Register Address DBn_add : DataRAM Address to be programmed DBn_wadd : DataRAM Address to be written Data Write_DBn : Write Data to DataRAMn Flash_add : Flash Address to be programmed Int_reg : Interrupt Register Address CMD_reg : Command Register Address PD_CMD : Program Command Data PGM_PageA : Program Data from DataRAM to PageA CS_reg : Controller Status Register Address DB0 _add Add_ reg Data PGM _PageA 2) Read Status CS_ reg Flash _add Add_ reg DB1 _add Add_ reg Page B 0000h Int_ reg PD_ CMD CMD_ reg Data PGM _PageB Data Write _DB0 * DB0_wadd* Data PGM _PageB OneNAND512(KFG1216x2A-xxB5) 85 FLASH MEMORY OneNAND512(KFG1216x2A-xxB5) 3.13 FLASH MEMORY ECC Operation The OneNAND device has on-chip ECC with the capability of detecting 2 bit errors and correcting 1-bit errors in the NAND Flash Array memory main and spare areas. As the device transfers data from a BufferRAM to the NAND Flash Array memory Page Buffer for Program Operation, the device initiates a background operation which generates an Error Correction Code (ECC) of 24bits for each sector main area data and 10bits for 2nd and 3rd word data of each sector spare area. During a Load operation from the NAND Flash Array memory Page, the on-chip ECC engine generates a new ECC. The 'Load ECC result' is compared to the originally 'Program ECC' thus detecting the number and position of errors. Single-bit error is corrected. ECC is updated by the device automatically. After a Load Operation, the Host can determine whether there was error by reading the 'ECC Status Register' (refer to section 2.8.26). Error types are divided into 'no error', '1bit correctable error', and '2bit error uncorrectable error'. OneNAND supports 2bit EDC even though 2bit error seldom or never occurs. Hence, it is not recommeded for Host to read 'ECC Status Register' for checking ECC error because the built-in Error Correction Logic of OneNAND automatically corrects ECC error. When the device reads the NAND Flash Array memory main and spare area data with an ECC operation, the device doesn't place the newly generated ECC for main and spare area into the buffer. Instead it places the ECC which was generated and written during the program operation into the buffer. An ECC operation is also done during the Boot Loading operation. 3.13.1 ECC Bypass Operation In an ECC bypass operation, the device does not generate ECC as a background operation. The result does not indicate error position (refer to the ECC Result Table). In a Program Operation the ECC code to NAND Flash Array memory spare area is not updated. During a Load operation, the on-chip ECC engine does not generate a new ECC internally. Also the ECC Status & Result to Registers are invalid. The error is not corrected and detected by itself, so that ECC bypass operation is not recommended for host. ECC bypass operation is set by the 9bit of System Configuration 1 Register (see section 2.8.19) ECC Code and ECC Result by ECC Operation Program operation Operation Load operation ECC Code Update to NAND ECC Code at BufferRAM Spare Flash Array Spare Area Area ECC Status & Result Update to Registers 1bit Error ECC operation Update Pre-written ECC code(1) loaded Update Correct ECC bypass Not update Pre-written code loaded Invalid Not correct NOTE: 1. Pre-written ECC code : ECC code which is previously written to NAND Flash Spare Area in program operation. 86 OneNAND512(KFG1216x2A-xxB5) 3.14 FLASH MEMORY Invalid Block Operation Invalid blocks are defined as blocks in the device's NAND Flash Array memory that contain one or more invalid bits whose reliability is not guaranteed by Samsung. The information regarding the invalid block(s) is called the Invalid Block Information. Devices with invalid block(s) have the same quality level as devices with all valid blocks and have the same AC and DC characteristics. An invalid block(s) does not affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a select transistor. The system design must be able to mask out the invalid block(s) via address mapping. The 1st block, which is placed on 00h block address, is always fully guaranteed to be a valid block. Due to invalid marking, during load operation for indentifying invalid block, a load error may occur. 3.14.1 Invalid Block Identification Table Operation A system must be able to recognize invalid block(s) based on the original invalid block information and create an invalid block table. Invalid blocks are identified by erasing all address locations in the NAND Flash Array memory except locations where the invalid block(s) information is written prior to shipping. An invalid block(s) status is defined by the 1st word in the spare area. Samsung makes sure that either the 1st or 2nd page of every invalid block has non-FFFFh data at the 1st word of sector0. Since the invalid block information is also erasable in most cases, it is impossible to recover the information once it has been erased. Any intentional erase of the original invalid block information is prohibited. The following suggested flow chart can be used to create an Invalid Block Table. 87 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY Invalid Block Table Creation Flow Chart Start Set Block Address = 0 Increment Block Address Create (or update) Invalid Block(s) Table No * Check "FFFFh" at the 1st word of sector 0 in 1st and 2nd page of every block Check "FFFFh" ? Yes No Last Block ? Yes End 3.14.2 Invalid Block Replacement Operation Within its life time, additional invalid blocks may develop with NAND Flash Array memory. Refer to the device's qualification report for the actual data. The following possible failure modes should be considered to implement a highly reliable system. In the case of a status read failure after erase or program, a block replacement should be done. Because program status failure during a page program does not affect the data of the other pages in the same block, a block replacement can be executed with a page-sized buffer by finding an erased empty block and reprogramming the current target data and copying the rest of the replaced block. Block Failure Modes and Countermeasures Failure Mode Detection and Countermeasure sequence Erase Failure Status Read after Erase --> Block Replacement Program Failure Status Read after Program --> Block Replacement Single Bit Failure in Load Operation Error Correction by ECC mode of the device 88 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY Referring to the diagram for further illustration, when an error happens in the nth page of block 'A' during program operation, copy the data in the 1st ~ (n-1)th page to the same location of block 'B' via data buffer0. Then copy the nth page data of block 'A' in the data buffer1 to the nth page of block 'B' or any free block. Do not further erase or program block 'A' but instead complete the operation by creating an 'Invalid Block Table' or other appropriate scheme. Block Replacement Operation Sequence 1st ∼ (n-1)th nth { Block A 1 an error occurs. Data Buffer0 of the device (page) 1 1st ∼ (n-1)th nth { Data Buffer1 of the device (assuming the nth page data is maintained) Block B 2 (page) 89 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY 4.0 DC CHARACTERISTICS 4.1 Absolute Maximum Ratings Parameter Symbol Vcc Voltage on any pin relative to VSS All Pins Unit -0.5 to + 2.45 Vcc (for 2.65V/3.3V) -0.5 to + 4.6 VIN (for 1.8V) -0.5 to + 2.45 VIN (for 2.65V/3.3V) -0.5 to + 4.6 Extended Temperature Under Bias Rating Vcc (for 1.8V) -30 to +125 Tbias Industrial V °C -40 to +125 Storage Temperature Tstg -65 to +150 °C Short Circuit Output Current IOS 5 mA Recommended Operating Temperature TA (Extended Temp.) -30 to +85 TA (Industrial Temp.) -40 to +85 °C NOTES: 1. Minimum DC voltage is -0.5V on Input/ Output pins. During transitions, this level should not fall to POR level(typ. [email protected] device, [email protected]/ 3.3V device). Maximum DC voltage is Vcc+0.6V on input / output pins which, during transitions, may overshoot to Vcc+2.0V for periods <20ns. 2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 4.2 Operating Conditions Voltage reference to GND Parameter Symbol VCC-core / Vcc Supply Voltage VCC- IO / Vccq VSS 1.8V Device 2.65V Device 3.3V Device Unit Min Typ. Max Min Typ. Max Min Typ. Max 1.7 1.8 1.95 2.4 2.65 2.9 2.7 3.3 3.6 V 0 0 0 0 0 0 0 0 0 V NOTES: 1. The system power should reach 1.7V after POR triggering level(typ. 1.5V) within 400us. For 2.65V and 3.3V device, the system power should reach 2.2V after POR triggering level(typ. 1.8V) within 400us. 2. Vcc-Core (or Vcc) should reach the operating voltage level prior to or at the same time as Vcc-IO (or Vccq). 90 OneNAND512(KFG1216x2A-xxB5) 4.3 FLASH MEMORY DC Characteristics 1.8V device Parameter Symbol Test Conditions Input Leakage Current ILI VIN=VSS to VCC, VCC=VCCmax Output Leakage Current 2.65V device Min Typ Max Min Typ Max - 1.0 - + 1.0 - 1.0 - ILO VOUT=VSS to VCC, VCC=VCCmax, - 1.0 CE or OE=VIH(Note 1) - + 1.0 - 1.0 - Active Asynchronous Read Current (Note 2) ICC1 CE=VIL, OE=VIH - 8 15 - 18 22 Active Burst Read Current (Note 2) ICC2 CE=VIL, OE=VIH 54Mhz - 12 20 - 22 1MHz - 3 4 - 7 Active Write Current (Note 2) ICC3 CE=VIL, OE=VIH - 8 15 - Active Load Current (Note 3) ICC4 CE=VIL, OE=VIH, WE=VIH - 30 40 Active Program Current (Note 3) ICC5 CE=VIL, OE=VIH, WE=VIH - 25 Active Erase Current (Note 3) ICC6 CE=VIL, OE=VIH, WE=VIH - Multi Block Erase Current (Note 3) ICC7 CE=VIL, OE=VIH, WE=VIH, 64blocks 3.3V device Min Unit Typ Max + 1.0 - 1.0 - + 1.0 µA + 1.0 - 1.0 - + 1.0 µA - 18 22 mA 30 - 22 30 mA 9 - 7 9 mA 17 22 - 17 22 mA - 30 40 - 30 40 mA 30 - 28 35 - 28 35 mA 20 25 - 23 30 - 23 30 mA - 20 25 - 23 30 - 23 30 mA Standby Current ISB CE= RP=VCC ± 0.2V - 10 50 - 35 80 - 35 80 µA Input Low Voltage VIL - -0.5 - 0.4 -0.5 - 0.4 0 - 0.8 V Input High Voltage VIH - VCCq0.4 - - VCCq V Output Low Voltage VOL IOL = 100 µA , VCC=VCCmin , VCCq=VCCqmin - - 0.2 - - 0.2 - - 0.22* Vccq V Output High Voltage VOH IOH = -100 µA , VCC=VCCmin , VCCq=VCCqmin VCCq0.1 - - VCCq0.4 - - 0.8*V - - V Note 1. CE should be VIH for RDY. IOBE should be ’0’ for INT. Note 2. Icc active for Host access Note 3. ICC active for Internal operation. (without host access) 91 VCCq VCCq+0.4 0.4 - VCCq 0.7*V +0.4 CCq CCq OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY 5.0 AC CHARACTERISTICS 5.1 AC Test Conditions Parameter Value Input Pulse Levels 0V to VCC Input Rise and Fall Times CLK 3ns other inputs 5ns Input and Output Timing Levels VCC/2 Output Load CL = 30pF Device Under Test VCC Input & Output Test Point VCC/2 VCC/2 * CL = 30pF including scope and Jig capacitance 0V Input Pulse and Test Point 5.2 Output Load Device Capacitance CAPACITANCE(TA = 25 °C, VCC = 1.8V/2.65V/3.3V, f = 1.0MHz) Item Symbol Test Condition CIN1 VIN=0V Input Capacitance KFG1216x2A Min Max - 10 Unit pF Control Pin Capacitance CIN2 VIN=0V - 10 pF Output Capacitance COUT VOUT=0V - 10 pF INT Capacitance CINT VOUT=0V - 15 pF NOTE : Capacitance is periodically sampled and not 100% tested. 5.3 Valid Block Characteristics Parameter Valid Block Number Symbol Min Typ. Max Unit NVB 502 - 512 Blocks NOTES: 1. The device may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or program factory-marked bad blocks. 2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block. 92 OneNAND512(KFG1216x2A-xxB5) 5.4 FLASH MEMORY AC Characteristics for Synchronous Burst Read See Timing Diagrams 6.1 and 6.2 Parameter Symbol KFG1216x2A Min Max Unit Clock CLK 1 54 MHz Clock Cycle tCLK 18.5 - ns Initial Access Time tIAA - 76 ns Burst Access Time Valid Clock to Output Delay tBA - 14.5 ns AVD Setup Time to CLK tAVDS 7 - ns AVD Hold Time from CLK tAVDH 7 - ns Address Setup Time to CLK tACS 7 - ns Address Hold Time from CLK tACH 7 - ns Data Hold Time from Next Clock Cycle tBDH 4 - ns Output Enable to Data tOE - 20 ns CE Disable to Output High Z tCEZ1) - 20 ns OE Disable to Output High Z tOEZ1) - 17 ns CE Setup Time to CLK tCES 7 - ns CLK High or Low Time tCLKH/L tCLK/3 - ns tRDYO - 14.5 ns CLK 2) to RDY valid CLK to RDY Setup Time tRDYA - 14.5 ns RDY Setup Time to CLK tRDYS 4 - ns CE low to RDY valid tCER - 15 ns Note 1. If OE is disabled at the same time or before CE is disabled, the output will go to high-z by tOEZ. If CE is disabled at the same time or before OE is disabled, the output will go to high-z by tCEZ. If CE and OE are disabled at the same time, the output will go to high-z by tOEZ. 2. It is the following clock of address fetch clock. 93 OneNAND512(KFG1216x2A-xxB5) 5.5 FLASH MEMORY AC Characteristics for Asynchronous Read See Timing Diagrams 6.3, 6.4, 6.5 and 6.6 Parameter KFG1216x2A Symbol Unit Min Max Unit Access Time from CE Low tCE - 76 ns Asynchronous Access Time from AVD Low tAA - 76 ns Asynchronous Access Time from address valid tACC - 76 ns Read Cycle Time tRC 76 - ns AVD Low Time tAVDP 12 - ns Address Setup to rising edge of AVD tAAVDS 7 - ns Address Hold from rising edge of AVD tAAVDH 7 - ns Output Enable to Output Valid tOE - 20 ns WE disable to OE enable tOEH 0 - ns CE Setup to AVD falling edge tCA 0 - ns tCEZ - 20 ns tOEZ - 17 ns tWEA 15 - ns CE Disable to Output & RDY High Z OE Disable to Output High Z 1) 1) WE Disable to AVD Enable NOTE: 1. If OE is disabled at the same time or before CE is disabled, the output will go to high-z by tOEZ. If CE is disabled at the same time or before OE is disabled, the output will go to high-z by tCEZ. If CE and OE are disabled at the same time, the output will go to high-z by tOEZ. These parameters are not 100% tested. 5.6 AC Characteristics for Warm Reset (RP), Hot Reset and NAND Flash Core Reset See Timing Diagrams 6.12, 6.13 and 6.14 Parameter Symbol Min Max Unit tReady1 (BufferRAM) - 5 µs RP & Reset Command Latch(During Load Routines) to INT High (Note1) tReady2 (NAND Flash Array) - 10 µs RP & Reset Command Latch(During Program Routines) to INT High (Note1) tReady2 (NAND Flash Array) - 20 µs RP & Reset Command Latch(During Erase Routines) to INT High (Note1) tReady2 (NAND Flash Array) - 500 µs RP & Reset Command Latch(NOT During Internal Routines) to INT High (Note1) tReady2 (NAND Flash Array) - 10 µs tRP 200 - ns RP & Reset Command Latch to BootRAM Access RP Pulse Width (Note2) Note 1. These parameters are tested based on INT bit of interrupt register. Because the time on INT pin is related to the pull-up and pull-down resistor value. 2. The device may reset if tRP < tRP min(200ns), but this is not guaranteed. 94 OneNAND512(KFG1216x2A-xxB5) 5.7 FLASH MEMORY AC Characteristics for Asynchronous Write/Load/ Program/Erase Operation See Timing Diagrams 6.7, 6.8 and 6.9 Parameter Symbol Min Typ Max Unit tWC 70 - - ns AVD low pulse width tAVDP 12 - - ns Address Setup Time tAWES 0 - - ns Address Hold Time tAH 30 - - ns Data Setup Time tDS 25 - - ns Data Hold Time tDH 0 - - ns WE Cycle Time CE Setup Time tCS 0 - - ns CE Hold Time tCH 10 - - ns WE Pulse Width tWPL 40 - - ns WE Pulse Width High tWPH 30 - - ns AVD Disable to WE Disable tVLWH 15 - - ns WE Disable to AVD Enable tWEA 15 - - ns 5.8 AC Characteristics for Load/Program/Erase Performance See Timing Diagrams 6.8, 6.9, and 6.10 Parameter Sector Read time(Note 1) Symbol Min Typ Max Unit tRD1 - 23 35 µs tRD2 - 30 45 µs Sector Program time(Note 1) tPGM1 - 205 720 µs Page Program time(Note 1) tPGM2 - 220 750 µs OTP Access Time(Note 1) tOTP - 500 700 ns Lock/Unlock/Lock-tight Time(Note 1) tLOCK - 500 700 ns Erase Suspend Time(Note 1) tESP - 400 500 µs 1 Block tERS1 - 2~64 Blocks tERS2 Page Read time(Note 1) Erase Resume Time(Note 1) Number of Partial Program Cycles in the sector (Including main and spare area) Block Erase time (Note 1) Multi BlocK Erase Verify Read time(Note 1) 2 3 ms 4 6 ms NOP - - 2 cycles 1 Block tBERS1 - 2 3 ms 2~64 Blocks tBERS2 - 4 6 ms tRD3 - 70 100 µs Note 1)These parameters are tested based on INT bit of interrupt register. Because the time on INT pin is related to the pull-up and pull-down resistor value. 95 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY 6.0 TIMING DIAGRAMS 6.1 8-Word Linear Burst Mode with Wrap Around See AC Characteristics Table 5.4 5 cycles for initial access shown. BRL=4 tCLK tCES tCLKH tCLKL ≈ CE tCER tCEZ CLK ≈ tAVDS ≈ tRDYO AVD tAVDH ≈ ≈ tBDH tACS A0-A15 tBA tACH D6 D7 D0 D1 D2 D3 ≈ DQ0-DQ15 D7 tOEZ tIAA tOE ≈ OE tRDYS tRDYA Hi-Z 6.2 Hi-Z ≈ RDY D0 Continuous Linear Burst Mode with Wrap Around See AC Characteristics Table 5.4 5 cycles for initial access shown. BRL=4 tCLK tCES ≈ CE tCER tCEZ CLK ≈ tAVDS ≈ tRDYO AVD tAVDH ≈ ≈ tBDH tACS A0-A15 tBA tACH Da Da+1 Da+2 Da+3 Da+4 Da+5 Da+n ≈ DQ0-DQ15 tOEZ tIAA tOE ≈ OE Hi-Z tRDYA tRDYS ≈ RDY Da+n+1 96 Hi-Z OneNAND512(KFG1216x2A-xxB5) 6.3 FLASH MEMORY Asynchronous Read (VA and AVD Transition Before CE Low) See AC Characteristics Table 5.5 VIL CLK CE tCEZ tAVDP AVD tOE OE WE tCE tOEZ DQ0-DQ15 Valid RD tAAVDH A0-A15 RDY VA Hi-Z Hi-Z NOTE: VA=Valid Read Address, RD=Read Data. 6.4 Asynchronous Read (VA and AVD Transition After CE Low) See AC Characteristics Table 5.5 CLK VIL CE tCEZ tAA tAVDP AVD tOE OE tWEA WE tOEZ DQ0-DQ15 Valid RD tAAVDH A0-A15 RDY VA Hi-Z Hi-Z NOTE: VA=Valid Read Address, RD=Read Data. 97 OneNAND512(KFG1216x2A-xxB5) 6.5 FLASH MEMORY Asynchronous Read (VA and AVD Transition After CE Low) See AC Characteristics Table 5.5 VIL CLK CE tCEZ tAVDP AVD tAAVDS OE tOE tWEA WE tOEZ DQ0-DQ15 Valid RD tAAVDH tACC A0-A15 RDY VA Hi-Z Hi-Z NOTE: VA=Valid Read Address, RD=Read Data. 6.6 Asynchronous Read (AVD is tied to CE) See AC Characteristics Table 5.5 CLK VIL tRC CE tCEZ tOE OE WE tCE tOEZ Valid RD DQ0-DQ15 tACC A0-A15 VA RDY Hi-Z Hi-Z NOTE: VA=Valid Read Address, RD=Read Data. 98 OneNAND512(KFG1216x2A-xxB5) 6.7 FLASH MEMORY Asynchronous Write See AC Characteristics Table 5.7 CLK VIL tCH tCS tCS CE tWPL tWPH WE tWC OE RP tAH A0-A15 VA tAWES DQ0-DQ15 RDY VA tDS tDH Valid WD Valid WD Hi-Z Hi-Z NOTE: VA=Valid Read Address, WD=Write Data. 99 OneNAND512(KFG1216x2A-xxB5) 6.8 FLASH MEMORY Load Operation Timing See AC Characteristics Tables 5.7 and 5.8 Load Command Sequence tAWES A0:A15 Read Data tAH CA AA LMA ≈ ≈ DQ0-DQ15 BA LCD tCS tDH CE ≈ tCH OE Da ≈ tCH tDS BA tWPL ≈ WE tWPH tRD tCS VIL tWC ≈ CLK INT NOTES: 1. AA = Address of address register CA = Address of command register LCD = Load Command LMA = Address of memory to be loaded BA = Address of BufferRAM to load the data BD = Program Data SA = Address of status register 2. “In progress” and “complete” refer to status register 3. Status reads in this figure is asynchronous read, but status read in synchronous mode is also supported. 100 Da+1 OneNAND512(KFG1216x2A-xxB5) 6.9 FLASH MEMORY Program Operation Timing See AC Characteristics Tables 5.7 and 5.8 Program Command Sequence (last two cycles) tAH tAWES A0:A15 Read Status Data BA AA PMA tCH PCD BD tCS tCH SA ≈ ≈ DQ0-DQ15 CA tCS ≈ tCH OE In Progress ≈ tDH tDS CE SA tWPL ≈ WE tWPH tCS VIL ≈ CLK tPGM tWC INT NOTES: 1. AA = Address of address register CA = Address of command register PCD = Program Command PMA = Address of memory to be programmed BA = Address of BufferRAM to load the data BD = Program Data SA = Address of status register 2. “In progress” and “complete” refer to status register 3. Status reads in this figure is asynchronous read, but status read in synchronous mode is also supported. 101 Complete OneNAND512(KFG1216x2A-xxB5) 6.10 FLASH MEMORY Block Erase Operation Timing See AC Characteristics Tables 5.7 and 5.8 Erase Command Sequence (last two cycles) tAWES A0:A15 Read Status Data tAH CA AA EMA ≈ ≈ DQ0-DQ15 SA ECD tCS tDH CE ≈ tCH OE In Progress ≈ tCH tDS SA tWPL ≈ WE tWPH tBERS tCS VIL tWC ≈ CLK INT NOTES: 1. AA = Address of address register CA = Address of command register ECD = Erase Command EMA = Address of memory to be erased SA = Address of status register 2. “In progress” and “complete” refer to status register 3. Status reads in this figure is asynchronous read, but status read in synchronous mode is also supported. 102 Complete OneNAND512(KFG1216x2A-xxB5) 6.11 FLASH MEMORY Cold Reset Timing POR triggering level System Power 1) OneNAND Operation Sleep Bootcode - copy done Bootcode copy Idle 2) RP INT High-Z INT bit 0 (default) IOBE bit 0 (default) INTpol bit 1 (default) Note: 1) Bootcode copy operation starts 400us later than POR activation. The system power should reach Vcc after POR triggering level(typ. 1.5V) within 400us for valid boot code data. 2) 1K bytes Bootcode copy takes 70us(estimated) from sector0 and sector1/page0/block0 of NAND Flash array to BootRAM. Host can read Bootcode in BootRAM(1K bytes) after Bootcode copy completion. 3) INT register goes ‘Low’ to ‘High’ on the condition of ‘Bootcode-copy done’ and RP rising edge. If RP goes ‘Low’ to ‘High’ before ‘Bootcode-copy done’, INT register goes to ‘Low’ to ‘High’ as soon as ‘Bootcode-copy done’ 103 3) 1 1 OneNAND512(KFG1216x2A-xxB5) 6.12 FLASH MEMORY Warm Reset Timing See AC Characteristics Tables 5.6 CE, OE RP tRP tReady1 High-Z RDY tReady2 INT bit Operation Status High-Z Idle1) Reset Ongoing2) BootRAM Access3) INT Bit Polling4) Idle1) NOTES: 1. The status which can accept any register based operation(Load, Program, Erase command, etc). 2. The status where reset is ongoing. 3. The status allows only BootRAM(BL1) read operation for Boot Sequence.(refer to 7.2.2 Boot Sequence) 4. To read BL2 of Boot Sequence, Host should wait INT until becomes ready. and then, Host can issue load command. (refer to 7.2.2 Boot Sequence, 7.1 Methods of Determing Interrupt status) 104 OneNAND512(KFG1216x2A-xxB5) 6.13 FLASH MEMORY Hot Reset Timing AVD BP(Note 3) or F220h A0~A15 00F0h or 00F3h4) DQ0~DQ15 CE OE WE tReady2 INT bit RDY OneNAND Operation High-Z Operation or Idle OneNAND reset Idle NOTE: 1. Internal reset operation means that the device initializes internal registers and makes output signals go to default status and bufferRAM data are kept unchanged after Warm/Hot reset operations. 2. Reset command : Command based reset or Register based reset 3. BP(Boot Partition): BootRAM area [0000h~01FFh, 8000h~800Fh] 4. 00F0h for BP, and 00F3h for F220h 105 OneNAND512(KFG1216x2A-xxB5) 6.14 FLASH MEMORY NAND Flash Core Reset Timing AVD F220h A0~A15 DQ0~DQ15 00F0h CE OE WE tReady2 INT bit RDY OneNAND Operation 6.15 High-Z Operation or Idle NAND Flash Core reset Idle Data Protection Timing During Power Down The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector disables all functions whenever Vcc is below about 1.3V. RP pin provides hardware protection and is recommended to be kept at VIL before power-down. VCC typ. 1.3V 0V RP INT OneNAND Operation Idle One NAND Reset 106 NAND Write Protected OneNAND512(KFG1216x2A-xxB5) 7.0 FLASH MEMORY TECHNICAL AND APPLICATION NOTES From time-to-time supplemental technical information and application notes pertaining to the design and operation of the device in a system are included in this section. Contact your Samsung Representative to determine if additional notes are available. 7.1 Methods of Determining Interrupt Status There are two methods of determining Interrupt Status on the OneNAND. Using the INT pin or monitoring the Interrupt Status Register Bit. The OneNAND INT pin is an output pin function used to notify the Host when a command has been completed. This provides a hardware method of signaling the completion of a program, erase, or load operation. In its normal state, the INT pin is high if the INT polarity bit is default. Before a command is written to the command register, the INT bit must be written to '0' so the INT pin transitions to a low state indicating start of the operation. Upon completion of the command operation by the OneNAND’s internal controller, INT returns to a high state. INT is an open drain output allowing multiple INT outputs to be Or-tied together. INT does not float to a hi-Z condition when the chip is deselected or when outputs are disabled. Refer to section 2.8 for additional information about INT. INT can be implemented by tying INT to a host GPIO or by continuous polling of the Interrupt status register. 7.1.1 The INT Pin to a Host General Purpose I/O INT can be tied to a Host GPIO to detect the rising edge of INT, signaling the end of a command operation. COMMAND INT This can be configured to operate either synchronously or asynchronously as shown in the diagrams below. 107 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY Synchronous Mode Using the INT Pin When operating synchronously, INT is tied directly to a Host GPIO. Host OneNAND CE CE AVD AVD CLK CLK RDY RDY OE OE GPIO INT Asynchronous Mode Using the INT Pin When configured to operate in an asynchronous mode, /CE and /AVD of the OneNAND are tied to /CE of the Host. CLK is tied to the Host Vss (Ground). /RDY is tied to a no-connect. /OE of the OneNAND and Host are tied together and INT is tied to a GPIO. Host OneNAND CE CE AVD 7.1.2 Vss CLK N.C RDY OE OE GPIO INT Polling the Interrupt Register Status Bit An alternate method of determining the end of an operation is to continuously monitor the Interrupt Status Register Bit instead of using the INT pin. Command INT This can be configured in either a synchronous mode or an asynchronous mode. 108 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY Synchronous Mode Using Interrupt Status Register Bit Polling When operating synchronously, /CE, /AVD, CLK, /RDY, /OE, and DQ pins on the host and OneNAND are tied together. Host OneNAND CE CE AVD AVD CLK CLK RDY RDY OE OE DQ DQ Asynchronous Mode Using Interrupt Status Register Bit Polling When configured to operate in an asynchronous mode, /CE and /AVD of the OneNAND are tied to /CE of the Host. CLK is tied to the Host Vss (Ground). /RDY is tied to a no-connect. /OE and DQ of the OneNAND and Host are tied together. Host OneNAND CE CE AVD Vss CLK N.C RDY OE OE DQ DQ 109 OneNAND512(KFG1216x2A-xxB5) 7.1.3 FLASH MEMORY Determining Rp Value Because the pull-up resistor value is related to tr(INT) an appropriate value can obtained with the following reference charts. INT pol = ’High’ Internal Vcc Rp ~50k ohm INT Ready Vcc VOH VOL Vss Busy State tf tr @ Vcc = 1.8V, Ta = 25°C , CL = 30pF 1.75 0.18 tf[ns] 3.77 1K ≈ tr[us] 0.06 1.345 0.045 ≈ 0.7727 1.788 0.036 3.77 3.77 3.77 3.77 3.77 10K 20K 30K Rp(ohm) 40K 50K 110 ≈≈ tr,tf ≈ 2.142 0.09 0.089 Ibusy [mA] 2.431 Ibusy ≈ 5.420 0.000 Open(100K) OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY INT pol = ’Low’ Internal Vcc INT Rp ~50k ohm tf tr Ready Vcc VOH Busy State Vss VOL @ Vcc = 1.8V, Ta = 25°C , CL = 30pF 1.623 0.18 0.09 tr[ns] 6.49 1K ≈ 0.067 tf[us] 0.06 1.02 0.045 ≈ 0.586 1.356 0.036 6.49 6.49 6.49 6.49 6.49 10K 20K 30K Rp(ohm) 40K 50K 111 ≈≈ ≈ tr,tf Ibusy Ibusy [mA] 1.84 1.75 ≈ 4.05 0.000 Open(100K) OneNAND512(KFG1216x2A-xxB5) 7.2 FLASH MEMORY Boot Sequence One of the best features OneNAND has is that it can be a booting device itself since it contains an internally built-in boot loader despite the fact that its core architecture is based on NAND Flash. Thus, OneNAND does not make any additional booting device necessary for a system, which imposes extra cost or area overhead on the overall system. As the system power is turned on, the boot code originally stored in NAND Flash Arrary is moved to BootRAM automatically and then fetched by CPU through the same interface as SRAM’s or NOR Flash’s if the size of the boot code is less than 1KB. If its size is larger than 1KB and less than or equal to 3KB, only 1KB of it can be moved to BootRAM automatically and fetched by CPU, and the rest of it can be loaded into one of the DataRAMs whose size is 2KB by Load Command and CPU can take it from the DataRAM after finishing the code-fetching job for BootRAM. If its size is larger than 3KB, the 1KB portion of it can be moved to BootRAM automatically and fetched by CPU, and its remaining part can be moved to DRAM through two DataRAMs using dual buffering and taken by CPU to reduce CPU fetch time. A typical boot scheme usually used to boot the system with OneNAND is explained at Patition of NAND Flash Array and OneNAND Boot Sequence. In this boot scheme, boot code is comprised of BL1, where BL stands for Boot Loader, BL2, and BL3. Moreover, the size of the boot code is larger than 3KB (the 3rd case above). BL1 is called primary boot loader in other words. Here is the table of detailed explanations about the function of each boot loader in this specific boot scheme. 7.2.1 Boot Loaders in OneNAND Boot Loaders in OneNAND Boot Loader Description BL1 Moves BL2 from NAND Flash Array to DRAM through two DataRAMs using dual buffering BL2 Moves OS image (or BL3 optionally) from NAND Flash Array to DRAM through two DataRams using dual buffering BL3 (Optional) Moves or writes the image through USB interface NAND Flash Array of OneNAND is divided into the partitions as described at Partition of NAND Flash array to show where each component of code is located and how much portion of the overall NAND Flash Array each one occupies. In addition, the boot sequence is listed below and depicted at Boot Sequence. 7.2.2 Boot Sequence Boot Sequence : 1. Power is on BL1 is loaded into BootRAM 2. BL1 is executed in BootRAM BL2 is loaded into DRAM through two DataRams using dual buffering by BL1 3. BL2 is executed in DRAM OS image is loaded into DRAM through two DataRams using dual buffering by BL2 4. OS is running 112 OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY Block 512 Reservoir Partition 6 File System Partition 5 Sector 0 Sector 1 Sector 2 Sector 3 Page 63 Page 62 Block 162 Partition 4 NBL3 BL3 Partition 3 : : BL2 Os Image Block 2 Block 1 Block 0 NBL1 BL1 Page 2 Page 1 NBL2 BL2 BL1 Page 0 Partition of NAND Flash array Reservoir File System step 3 Data Ram 1 Os Image Data Ram 0 Os Image Boot Ram(BL 1) BL1 BL2 BL 2 step 2 step 1 NAND Flash Array Internal BufferRAM OneNAND DRAM NOTE: Step 2 and Step 3 can be copied into DRAM through two DataRAMs using dual buffering OneNAND Boot Sequence 113 OneNAND512(KFG1216x2A-xxB5) 8.0 FLASH MEMORY PACKAGE DIMENSIONS 63-FBGA-9.50x12.00 Units:millimeters #A1 INDEX 9.50±0.10 0.10 MAX 9.50±0.10 A 0.80x9=7.20 (Datum A) 6 B 5 4 3 2 1 0.80 0.80x11=8.80 B D E 4.40 F 0.32±0.05 G H 3.60 0.9±0.10 TOP VIEW 63-∅ 0.45±0.05 ∅ 0.20 M A B 114 BOTTOM VIEW 12.00±0.10 A C 0.45±0.05 12.00±0.10 12.00±0.10 (Datum B) 0.80 #A1