KODENSHI KIP-M2M-1

Optical Monitoring Photodiode Chip for KIP-MxM
KIP-MxM
Description
KIP-MxM-1 is InGaAs PIN Photodiode chip with BIG size active diameter(Ø1.0mm,Ø2.0mm,Ø3.0mm).
It is recommended for Laser diode life test and optical power monitoring.
Features
Front illuminated planar PIN-PD
● High reliability and environmental endurance
● Wide spectral response range from 0.9 um to 1.6 um
●
KIP-M1M
KIP-M2M
KIP-M3M
Applications
Laser diode power monitoring
● Laser diode life test
●
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
VR max.
10
V
Reverse Voltage
T
Operating Temperature
-40 ~ +85
℃
opr
Tstg.
Storage Temperature
-40 ~ +100
℃
Tsol.
Soldering Temperature *1
260
℃
*1 : Soldering Time ≤ 10 seconds (At a distance of 1 mm from the package).
Electro-Optical Characteristics
KIP - M1M - 1
KIP - M2M - 1
KIP - M3M - 1
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
ID
Dark Current
1.0
5.0
2.0 10.0
10.0 50.0
nA
1.31um
0.85
0.85
0.85
Responsivity
S
mA/mW
1.55um
0.90
0.90
0.90
fC
3dB Cut off frequency
2
4
MHz
18
35
4
8
CT
Terminal Capacitance
250 500
pF
90 150
550 1000
* These specifications are subject to change without notice.
Parameter
Symbol
Unit
Condition
@ VR=5V, 25℃
@ VR=5V, 25℃
@VR=5V, RL=50Ω
@ VR=5V, f=1MHz
Physical Dimension Properties
Parameter
Symbol
Active area
Chip out dimension
bonding Pad Size
Chip Thickness
Ø
Sq
Ø
t
KIP - M1M - 1
Typ.
1.0
1.4 x 1.4
KIP - M2M - 1
Typ.
2.0
2.4 x 2.4
100
150
KIP - M3M - 1
Typ.
3.0
3.6 x 3.6
Unit
㎜
㎟
㎛
㎛
Ordering information
KIP
KODENSHI
InGaAs
PIN Photodiode
Chip
Data Rate
M: Monitoring
Active area
1M: Ø1.0 ㎜
2M: Ø2.0 ㎜
3M: Ø3.0 ㎜
Carrier type
1: chips in gel pack
2: chips on
submounter
3: chips on blue tape
The engineering spec can be revised without any previous notice.
When customer's applying, please request us a revised specification before submitting the specification to the customers.
For more information on other parts available, please visit our website: www.kodenshi.co.kr
KODENSHI KOREA Corp. 513-5 Eoyang-Dong, Iksan, 570-210, Korea
1/2
Rev.001
Optical Monitoring Photodiode Chip for KIP-MxM
KIP-MxM
■ Spectral response range
■ Dark current vs Reverse voltage
(Typ. Ta=25℃)
100
Dark Current (uA)
10
1
KIP-M1M
KIP-M2M
KIP-M3M
0.1
0.01
1E-3
1E-4
0
20
40
60
Reverse Bias Voltage (V)
■ Dark Current vs Operating Temperature
■ -3dB Cutoff Frequency
(Typ. Ta=25℃)
(Typ. Ta=25℃)
-20
KIP-M1M
KIP-M2M
KIP-M3M
Gain (dB)
-30
-40
-50
1
10
100
Dark Current (nA)
1000
100
10
1
KIP-M1M
KIP-M2M
KIP-M3M
0.1
0
20
40
60
80
100
Temperature (℃)
Frequency (MHz)
■ Chip out dimension (unit:mm)
Ø3.0
Ø2.0
Ø1.0
Ø0.1
Ø0.1
Ø 0.1
ㅁ1.4
ㅁ2.4
KIP-M1M
KIP-M2M
ㅁ3.6
KIP-M3M
The engineering spec can be revised without any previous notice.
When customer's applying, please request us a revised specification before submitting the specification to the customers.
For more information on other parts available, please visit our website: www.kodenshi.co.kr
KODENSHI KOREA Corp. 513-5 Eoyang-Dong, Iksan, 570-210, Korea
2/2
Rev.001