1.25G InGaAs PIN Photodiode Chip KIP-107-1 Description KIP-107-1 is InGaAs PIN Photodiode chip with Ø75um active diameter. It is recommended for optical data communication with high sensitivity. Features Front illuminated planar PIN-PD Low capacitance and low dark current High reliability and environmental endurance Wide operating wavelength range from 1.1µm to 1.6µm Applications Optical Data Communications for 1.25 / 2.5 Gbps Optical power monitoring Absolute Maximum Ratings Symbol Parameter VR Reverse Voltage Pmax Maximun Optical Power Input IF Forward Current Topr Operating Temperature Tstg. Storage Temperature Die- Attach Temperature *1 *1 : Attach Temperature Time ≤ 60 seconds max Ratings 20 30 10 -40 ~ +85 -40 ~ +100 300 Electro-Optical Characteristics Parameter Symbol Min. Typ. Max. 75 Active area(Ø) D ID Dark Current 0.04 0.5 1.31um 0.85 0.90 Responsivity S 1.55um 0.90 0.95 f h,-3dB 3dB Cut off frequency 2 Capacitance Cp 0.8 1.2 * These specifications are subject to change without notice. Physical Dimension Properties Parameter Active area(Ø) Chip Size bonding Pad Size (Ø) Chip Thickness Ordering information KIP KODENSHI InGaAs PIN Photodiode Chip Data Rate M: Monitoring 1: 1.5 Gbps 2: 2.5 Gbps Symbol D t Unit ㎛ nA mA/mW GHz pF Unit V mW mA ℃ ℃ ℃ Condition @ V R=5V, 25℃ @ V R=5V, 25℃ @VR=5, RL=50Ω @ V R=5V, f=1MHz Typ. 75 250x250 80 120 Unit ㎛ ㎛2 ㎛ ㎛ Carrier type Active area 05: Ø50 ㎛ 1: chips in gel pack 07: Ø75 ㎛ 25: □ 250 sq ㎛ 2: chips on submounter 3: chips on blue tape 1/1 For more information on other parts available, please visit our website: www.kodenshi.co.kr Rev.002 KODENSHI KOREA Corp. 513-5 Eoyang-Dong, Iksan, 570-210, Korea