KM416S8030B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 KM416S8030B CMOS SDRAM Revision History Revision 0.0 (May 15, 1999) • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER. • Eliminated FREQUENCY vs.PARAMETER RELATIONSHIP TABLE. • Symbol Change Notice IIL Before Input leakage current (inputs) After IIL Input leakage current (I/O pins) ILI Input leakage current IOL Output open @ DC characteristic table Io Output open @ DC characteristic table • Test Condition in DC CHARACTERISTIC Change Notice Symbol Before After ICC2P , ICC3P CKE ≤ VIL(max), tCC = 15ns CKE ≤ VIL(max), tCC = 10ns ICC2N , ICC3N CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns Input signals are changed one time during 30ns CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns Input signals are changed one time during 20ns ICC4 2 Banks activated 4 Banks activated Revision 0.1 (Jun 28, 1999) • Added Notes @OPERATING AC PARAMETER Notes : 5. For -8/H/L, tRDL=1CLK and tDAL=1CLK+20ns is also supported . SAMSUNG recommands tRDL=2CLK and tDAL=2CLK + 20ns. • Added -10 bining product. Rev. 0.1 Jun. 1999 KM416S8030B CMOS SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM416S8030B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation ORDERING INFORMATION • DQM for masking Part No. Max Freq. KM416S8030BT-G/FA 133MHz(CL=3) KM416S8030BT-G/F8 125MHz(CL=3) KM416S8030BT-G/FH 100MHz(CL=2) KM416S8030BT-G/FL 100MHz(CL=3) • Auto & self refresh • 64ms refresh period (4K cycle) Interface Package LVTTL 54 TSOP(II) KM416S8030BT-G/F10 66MHz(CL=2 &3) FUNCTIONAL BLOCK DIAGRAM I/O Control Data Input Register LWE LDQM Bank Select Output Buffer Sense AMP Row Decoder ADD Row Buffer Refresh Counter 2M x 16 2M x 16 2M x 16 DQi Column Decoder Col. Buffer LCBR LRAS Address Register CLK 2M x 16 Latency & Burst Length LCKE Programming Register LRAS LCBR LWE LCAS LDQM LWCBR Timing Register CLK CKE CS RAS CAS WE LDQM UDQM * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 KM416S8030B CMOS SDRAM PIN CONFIGURATION (Top view) VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 VDD LDQM WE CAS RAS CS BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 VSS DQ15 VSSQ DQ14 DQ13 VDDQ DQ12 DQ11 VSSQ DQ10 DQ9 VDDQ DQ8 VSS N.C/RFU UDQM CLK CKE N.C A11 A9 A8 A7 A6 A5 A4 VSS 54Pin TSOP (II) (400mil x 875mil) (0.8 mm Pin pitch) PIN FUNCTION DESCRIPTION Pin Name Input Function CLK System clock Active on the positive going edge to sample all inputs. CS Chip select Disables or enables device operation by masking or enabling all inputs except CLK, CKE and DQM CKE Clock enable Masks system clock to freeze operation from the next clock cycle. CKE should be enabled at least one cycle prior to new command. Disable input buffers for power down in standby. A0 ~ A11 Address Row/column addresses are multiplexed on the same pins. Row address : RA0 ~ RA11, Column address : CA0 ~ CA8 BA0 ~ BA1 Bank select address Selects bank to be activated during row address latch time. Selects bank for read/write during column address latch time. RAS Row address strobe Latches row addresses on the positive going edge of the CLK with RAS low. Enables row access & precharge. CAS Column address strobe Latches column addresses on the positive going edge of the CLK with CAS low. Enables column access. WE Write enable Enables write operation and row precharge. Latches data in starting from CAS, WE active. L(U)DQM Data input/output mask Makes data output Hi-Z, tSHZ after the clock and masks the output. Blocks data input when L(U)DQM active. DQ0 ~ 15 Data input/output Data inputs/outputs are multiplexed on the same pins. VDD/VSS Power supply/ground Power and ground for the input buffers and the core logic. VDDQ/VSSQ Data output power/ground Isolated power supply and ground for the output buffers to provide improved noise immunity. N.C/RFU No connection /reserved for future use This pin is recommended to be left No Connection on the device. Rev. 0.1 Jun. 1999 KM416S8030B CMOS SDRAM ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Voltage on any pin relative to Vss VIN, VOUT -1.0 ~ 4.6 V Voltage on VDD supply relative to Vss VDD, VDDQ -1.0 ~ 4.6 V TSTG -55 ~ +150 °C Power dissipation PD 1 W Short circuit current IOS 50 mA Storage temperature Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. DC OPERATING CONDITIONS Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C) Parameter Symbol Min Typ Max Unit VDD, VDDQ 3.0 3.3 3.6 V Input logic high voltage VIH 2.0 3.0 VDD+0.3 V 1 Input logic low voltage VIL -0.3 0 0.8 V 2 Output logic high voltage VOH 2.4 - - V IOH = -2mA Output logic low voltage VOL - - 0.4 V IOL = 2mA ILI -10 - 10 uA 3 Supply voltage Input leakage current Note Notes : 1. VIH (max) = 5.6V AC.The overshoot voltage duration is ≤ 3ns. 2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns. 3. Any input 0V ≤ VIN ≤ VDDQ, Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs. CAPACITANCE (VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV) Pin Symbol Min Max Unit Note CCLK 2.5 4.0 pF 1 Clock RAS, CAS, WE, CS, CKE, DQM CIN 2.5 5.0 pF 2 Address CADD 2.5 5.0 pF 2 DQ0 ~ DQ15 COUT 4.0 6.5 pF 3 Notes : 1. -A only specify a maximum value of 3.5pF 2. -A only specify a maximum value of 3.8pF 3. -A only specify a maximum value of 6.0pF Rev. 0.1 Jun. 1999 KM416S8030B CMOS SDRAM DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = 0 to 70°C) Parameter Operating current (One bank active) Precharge standby current in power-down mode Symbol ICC1 ICC2P Active standby current in power-down mode Active standby current in non power-down mode (One bank active) Burst length = 1 tRC ≥ tRC(min) IO = 0 mA -8 -H -L -10 150 150 140 140 140 CKE ≤ VIL(max), tCC = 10ns 1 CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns Input signals are changed one time during 20ns ICC3NS 1 mA 20 mA 7 CKE ≤ VIL(max), tCC = 10ns 5 ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞ ICC3N mA 1 CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ ICC2NS Input signals are stable ICC3P Unit Note -A ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞ ICC2N Precharge standby current in non power-down mode Version Test Condition mA 5 CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns Input signals are changed one time during 20ns 30 mA CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 20 mA ICC4 IO = 0 mA Page burst 4Banks Activated tCCD = 2CLKs 180 170 145 145 145 mA 1 Refresh current ICC5 tRC ≥ tRC(min) 220 220 210 210 210 mA 2 Self refresh current ICC6 CKE ≤ 0.2V Operating current (Burst mode) G 1.5 mA 3 F 800 uA 4 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. KM416S8030B-G** 4. KM416S8030B-F** 5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ) Rev. 0.1 Jun. 1999 KM416S8030B CMOS SDRAM AC OPERATING TEST CONDITIONS (VDD = 3.3V ± 0.3V, TA = 0 to 70°C) Parameter AC input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Value Unit 2.4/0.4 V 1.4 V tr/tf = 1/1 ns 1.4 V See Fig. 2 3.3V Vtt = 1.4V 1200Ω 50Ω VOH (DC) = 2.4V, IOH = -2mA VOL (DC) = 0.4V, IOL = 2mA Output 870Ω Output Z0 = 50Ω 50pF 50pF (Fig. 1) DC output load circuit (Fig. 2) AC output load circuit OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) Parameter Version Symbol -A -8 -H -L -10 Unit Note Row active to row active delay tRRD(min) 15 16 20 20 20 ns 1 RAS to CAS delay tRCD(min) 20 20 20 20 24 ns 1 Row precharge time tRP(min) 20 20 20 20 24 ns 1 tRAS(min) 45 48 50 50 50 ns 1 Row active time tRAS(max) 100 Row cycle time tRC(min) Last data in to row precharge tRDL(min) Last data in to Active delay tDAL(min) Last data in to new col. address delay tCDL(min) 1 CLK 2 Last data in to burst stop tBDL(min) 1 CLK 2 Col. address to col. address delay tCCD(min) 1 CLK 3 ea 4 Number of valid output data 65 68 CAS latency=3 CAS latency=2 70 us 70 ns 1 2 CLK 2,5 2 CLK + 20 ns - 5 2 - 80 1 Notes : 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then rounding off to the next higher integer. 2. Minimum delay is required to complete write. 3. All parts allow every cycle column address change. 4. In case of row precharge interrupt, auto precharge and read burst stop. 5. For -8/H/L/10, tRDL=1CLK and tDAL=1CLK+20ns is also supported . SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + 20ns. Rev. 0.1 Jun. 1999 KM416S8030B CMOS SDRAM AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter -A Symbol Min CLK cycle time CAS latency=3 tCC CAS latency=2 CLK to valid output delay CAS latency=3 Output data hold time CAS latency=3 7.5 -8 Max 1000 tSAC CAS latency=2 tOH CAS latency=2 Min 8 -H Max 1000 - Min 10 -L Max 1000 10 Min 10 - 10 Max 1000 12 Min 10 Unit Note Max 1000 ns 1 ns 1,2 ns 2 13 5.4 6 6 6 7 - - 6 7 7 2.7 3 3 3 3 - - 3 3 3 CLK high pulse width tCH 2.5 3 3 3 3.5 ns 3 CLK low pulse width tCL 2.5 3 3 3 3.5 ns 3 Input setup time tSS 1.5 2 2 2 2.5 ns 3 Input hold time tSH 0.8 1 1 1 1.5 ns 3 CLK to output in Low-Z tSLZ 1 1 1 1 1 ns 2 CLK to output in Hi-Z CAS latency=3 tSHZ CAS latency=2 5.4 6 6 6 7 - - 6 7 7 ns Notes : 1. Parameters depend on programmed CAS latency. 2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]ns should be added to the parameter. DQ BUFFER OUTPUT DRIVE CHARACTERISTICS Parameter Symbol Condition Min Output rise time trh Measure in linear region : 1.2V ~ 1.8V Output fall time tfh Output rise time Output fall time Typ Max Unit Notes 1.37 4.37 Volts/ns 3 Measure in linear region : 1.2V ~ 1.8V 1.30 3.8 Volts/ns 3 trh Measure in linear region : 1.2V ~ 1.8V 2.8 3.9 5.6 Volts/ns 1,2 tfh Measure in linear region : 1.2V ~ 1.8V 2.0 2.9 5.0 Volts/ns 1,2 Notes : 1. Rise time specification based on 0pF + 50 Ω to VSS, use these values to design to. 2. Fall time specification based on 0pF + 50 Ω to VDD, use these values to design to. 3. Measured into 50pF only, use these values to characterize to. 4. All measurements done with respect to VSS. Rev. 0.1 Jun. 1999 KM416S8030B CMOS SDRAM IBIS SPECIFICATION 66MHz and 100MHz Pull-up 0 IOH Cha.racteristics (Pull-up) (V) 3.45 3.3 3.0 2.6 2.4 2.0 1.8 1.65 1.5 1.4 1.0 0.0 0.0 -21.1 -34.1 -58.7 -67.3 -73.0 -77.9 -80.8 -88.6 -93.0 100MHz Max I (mA) -2.4 -27.3 -74.1 -129.2 -153.3 -197.0 -226.2 -248.0 -269.7 -284.3 -344.5 -502.4 -0.7 -7.5 -13.3 -27.5 -35.5 -41.1 -47.9 -52.4 -72.5 -93.0 0.5 1 1.5 2 2.5 3 3.5 3 3.5 0 66MHz Min I (mA) -100 -200 mA Voltage 100MHz Min I (mA) -300 -400 -500 -600 Voltage IOH Min (100MHz) IOH Min (66MHz) IOH Max (66 and 100MHz) 66MHz and 100MHz Pull-down IOL Characteristics (Pull-down) (V) 0.0 0.4 0.65 0.85 1.0 1.4 1.5 1.65 1.8 1.95 3.0 3.45 100MHz Min I (mA) 0.0 27.5 41.8 51.6 58.0 70.7 72.9 75.4 77.0 77.6 80.3 81.4 100MHz Max I (mA) 0.0 70.2 107.5 133.8 151.2 187.7 194.4 202.5 208.6 212.0 219.6 222.6 66MHz Min I (mA) 0.0 17.7 26.9 33.3 37.6 46.6 48.0 49.5 50.7 51.5 54.2 54.9 250 200 150 mA Voltage 100 50 0 0 0.5 1 1.5 2 2.5 Voltage IOL Min (100MHz) IOL Min (66MHz) IOL Max (100MHz) Rev. 0.1 Jun. 1999 KM416S8030B CMOS SDRAM Minimum VDD clamp current (Referenced to VDD) VDD Clamp @ CLK, CKE, CS, DQM & DQ I (mA) 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.23 1.34 3.02 5.06 7.35 9.83 12.48 15.30 18.31 20 15 mA VDD (V) 0.0 0.2 0.4 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 10 5 0 0 1 2 3 Voltage I (mA) Minimum VSS clamp current VSS Clamp @ CLK, CKE, CS, DQM & DQ I (mA) -57.23 -45.77 -38.26 -31.22 -24.58 -18.37 -12.56 -7.57 -3.37 -1.75 -0.58 -0.05 0.0 0.0 0.0 0.0 -3 -2 -1 0 0 -10 -20 mA VSS (V) -2.6 -2.4 -2.2 -2.0 -1.8 -1.6 -1.4 -1.2 -1.0 -0.9 -0.8 -0.7 -0.6 -0.4 -0.2 0.0 -30 -40 -50 -60 Voltage I (mA) Rev. 0.1 Jun. 1999 KM416S8030B CMOS SDRAM SIMPLIFIED TRUTH TABLE Command Register Mode register set Auto refresh Refresh CKEn-1 CKEn CS RAS CAS WE DQM H X L L L L X OP code L L L H X X H Entry Self fefresh Exit H H Bank active & row addr. H X Read & column address Auto precharge disable H X Write & column address Auto precharge disable L H H H H X X X L L H H X V L H L H X V X X L H L L H X X L L H L H H L L X H L Exit L H Entry H L Precharge power down mode Exit L V Column address (A0 ~ A8) L X X All banks Entry L DQM H No operation command H H H X X X L V V V X X X X H X X X L H H H H X X X L V V V X X H X X X L H H H 3 3 Column address (A0 ~ A8) H H Clock suspend or active power down 3 Row address H H Note 1,2 X Auto precharge enable Bank selection A11, A9 ~ A0 3 Auto precharge enable Burst stop A10/AP L L Precharge BA0,1 X V L X H 4 4,5 4 4,5 6 X X X X X X X V X X X 7 Notes : 1. OP Code : Operand code A0 ~ A11 & BA0 ~ BA1 : Program keys. (@ MRS) 2. MRS can be issued only at all banks precharge state. A new command can be issued after 2 CLK cycles of MRS. 3. Auto refresh functions are as same as CBR refresh of DRAM. The automatical precharge without row precharge command is meant by "Auto". Auto/self refresh can be issued only at all banks precharge state. 4. BA0 ~ BA1 : Bank select addresses. If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected. If both BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank B is selected. If both BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank C is selected. If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected. If A10/AP is "High" at row precharge, BA0 and BA1 is ignored and all banks are selected. 5. During burst read or write with auto precharge, new read/write command can not be issued. Another bank read/write command can be issued after the end of burst. New row active of the associated bank can be issued at tRP after the end of burst. 6. Burst stop command is valid at every burst length. 7. DQM sampled at positive going edge of a CLK and masks the data-in at the very CLK (Write DQM latency is 0), but makes Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2) Rev. 0.1 Jun. 1999