KEC KR32S030F

300
SEMICONDUCTOR
KR32S018M/F~KR32S033M/F
TECHNICAL DATA
BIPOLAR LINEAR INTEGRATED CIRCUIT
POWER LOW DROPOUT REGULATOR
E
The KR32SXXXM/F is an efficient linear voltage regulator with very low
B
dropout voltage (Typically 10mV at light loads and 250mV at 300 )
The KR32SXXXM/F can be enabled, or shut down by a CMOS or TTL
1
B
2
D
_ 0.1
0.4 +
E
F
G
H
I
J
K
L
2.8+0.2/-0.3
_ 0.2
1.9 +
0.95
_ 0.05
0.16 +
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
F
A
G
features include reversed battery protechion, current limiting, over temperature
4
D
3
L
C
shutdown, and low noise performance with an ultra-low-noise option
FEATURES
I
H
J
High output voltage accuracy : 1%
J
Low quiescent current. : IQ(OFF) =3
Very low ground current : 1.8
1.6+0.2/-0.1
_ 0.05
0.70 +
C
G
compatible signal. When disabled. power consumption drops nearly to zero.
Dropout ground current is minimized to help prolong battery life. Other key
DIM MILLIMETERS
_ 0.2
A
2.9 +
5
1
1. VIN
2. GND
3. ON/OFF CONTROL
4. BYPASS
5. VOUT
(IOUT=150 )
Low dropout voltage : 250mV (IOUT=300 )
Built-in ON/OFF control terminal
5
2
4
3
Built -in over current , Over heat protection function
Reverse-battery protection
TSV
APPLICATIONS
Laptop, notebook, and palmtop computers
A
K
Cellular telephones and battery-powered equipment
B
J
D
Consumer and personal electronics
C
PC Card VCC and VPP regulation and switching
4
E
High-effciency linear power supplies
1
2
F
5
SMPS post-regulator/dc-to-dc modules
3
G
I
LINE-UP
DIM
A
B
C
D
E
F
G
H
I
J
K
H
TSV
SOT-89-5
VOUT (V)
ITEM
MARKING
ITEM
MARKING
1.8
KR32S018M
B18
KR32S018F
D1
2.5
KR32S025M
B25
KR32S025F
D2
2.6
KR32S026M
B26
KR32S026F
D3
2.7
KR32S027M
B27
KR32S027F
D4
2.8
KR32S028M
B28
KR32S028F
D5
2.85
KR32S285M
B2J
KR32S285F
D6
2.9
KR32S029M
B29
KR32S029F
D7
3.0
KR32S030M
B30
KR32S030F
D8
3.1
KR32S031M
B31
KR32S031F
D9
3.3
KR32S033M
B33
KR32S033F
D0
2007. 2. 9
Revision No : 0
1
2
3
1. BYPASS
2. GND
3. ON/OFF CONTROL
4. VIN
5. VOUT
MILLIMETERS
_ 0.10
4.50 +
_ 0.03
3.00 +
_ 0.10
1.60 +
_ 0.08
0.90 +
_ 0.05
2.50 +
_ 0.15
4.30 +
_ 0.03
0.42 +
_ 0.03
1.50 +
_ 0.03
0.47 +
_ 0.02
0.31 +
_ 0.07
1.50 +
* Heat sink is common to 2.GND
SOT-89-5
1/6
KR32S018M/F~KR32S033M/F
MARKING
PIN DESCRIPTIONS
5
4
Lot No.
PIN NO.
NAME
1
VIN
2
GND
3
ON/OFF
Control
Enable/Shutdown (Input):CMOS conpatible
input. Logic high = Enable, Logic
low or open = Shutdown
4
Bypass
Reference Bypass : Connect external 470pF
capacitor to GND to reduce output
noise. May be left open
5
VOUT
Type Name
2
1
FUNCTION
Supply Input
Ground
3
< TSV >
Regulator Output
PIN DESCRIPTIONS
MARKING
5
PIN NO.
NAME
FUNCTION
1
Bypass
Reference Bypass : Connect external 470pF
capacitor to GND to reduce output
2
GND
3
ON/OFF
Control
4
VIN
5
VOUT
Lot No.
4
Type Name
1
2
3
< SOT-89-5 >
Enable/Shutdown (Input):CMOS conpatible
input. Logic high = Enable, Logic
low or open = Shutdown
Supply Input
Regulator Output
Fig. 2 TEST CIRCUIT / APPLICATION CIRCUIT
Fig. 1 BLOCK DIAGRAM
VIN
Ground
5
1
VOUT
VIN = 3.8V
1
5
COUT
BYPASS
COUT = 2.2 µF
(tantalum)
4
CBYPASS
VOUT = 2.8V
2 KR32S028M
+
Bandgap
Ref.
ON/OFF
CONTROL
3
4
ON/OFF 3
CONTROL
Current Limit
Thermal Shutdown
CBYPASS = 470pF
2
GND
2007. 2. 9
Revision No : 1
2/6
KR32S018M/F~KR32S033M/F
MAXIMUM RATINGS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Supply Input Voltage
VIN
16
V
ON/OFF Control Voltage
VC
5
V
Output Current
IOUT
300
PD
900
Tj
150
Topr
-40~125
Tstg
-55~150
TSV
Power Dissipation
(Note)
SOT-89-5
Junction Temperature
Operating Junction Temperature
Storage Temperature
Note) Package mounted on a ceramic board. (600m
2
0.8m)
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, VIN=VOUT+1V, IOUT=100
CHARACTERISTIC
Output Voltage
mW
, COUT=4.7
SYMBOL
, Tj=25 )
MIN.
TYP.
MAX.
KR32S018M/F
1.782
1.8
1.818
KR32S025M/F
2.475
2.5
2.525
KR32S026M/F
2.574
2.6
2.626
KR32S027M/F
2.673
2.7
2.727
2.772
2.8
2.828
2.8215
2.85
2.8785
2.871
2.9
2.929
KR32S030M/F
2.97
3.0
3.03
KR32S031M/F
3.069
3.1
3.131
KR32S033M/F
3.267
3.3
3.333
KR32S028M/F
VOUT
KR32S285M/F
TEST CONDITION
VIN=VOUT+1V
KR32S029M/F
Load Regulation
Reg Load
Line Regulation
Reg Line
Dropout Voltage
Temperature Coefficient of output voltage
UNIT
V
Io=100 ~300
VIN=VOUT+1V~12V
-
0.05
0.7
%
-
0.009
0.05
%/V
VD-1
IOUT=100
-
10
60
VD-2
IOUT=50
-
115
175
VD-3
IOUT=150
-
175
300
VD-4
IOUT=300
-
250
400
Tj=-40
-
40
80
TCVo
125
ppm/
Ripple Rejection
RR
f=120Hz
-
75
-
Output Noise Voltage
VNO
IOUT=50 , COUT=2.2 ,
CBYPASS=470pF
-
30
-
rms
2.0
-
-
V
2
5
20
-
-
0.4
-1
Output ON-state voltage for control
VC(ON)
Output ON-state current for control
IC(ON)
Output OFF-state voltage for control
VC(OFF)
Output OFF-state current for control
Quiescent Current
Quiescent Current (OFF Mode)
2007. 2. 9
Revision No : 1
VC=2.0V
-
IC(OFF-1)
VC=0.4V
-
0.01
IC(OFF-2)
VC=0.18V
-
0.01
-2
IQ1
VC=3V, IOUT=100
-
80
130
IQ2
VC=3V, IOUT=50
-
350
650
IQ3
VC=3V, IOUT=150
-
1.8
2.5
IQ4
VC=3V, IOUT=300
-
4.0
5.5
IQ(OFF-1)
VC=0.4V
-
0.05
3
IQ(OFF-2)
VC=0.18V
-
0.10
8
V
3/6
KR32S018M/F~KR32S033M/F
fIN - R.R (2)
0
VIN= 3.6V
VOUT= 2.6V
-20
-40
-60
-80
IOUT= 100mA
COUT= 1µF
-100
10
100
1k
10k
100k
1M
RIPPLE REJECTION R.R (dB)
RIPPLE REJECTION R.R (dB)
fIN - R.R (1)
0
VIN= 3.6V
VOUT= 2.6V
-20
-40
-60
CBYP = 0.01µF
-100
10
10M
IOUT = 100µA
COUT = 2.2µF
-80
INPUT FREQUENCY fIN (Hz)
100
-20
-40
-60
-80
IOUT= 1mA
COUT= 1µF
1k
10k
100k
1M
RIPPLE REJECTION R.R (dB)
RIPPLE REJECTION R.R (dB)
VIN= 3.6V
100
0
-20
-40
-60
10M
IOUT = 1mA
COUT = 2.2µF
-80
CBYP = 0.01µF
-100
10
100
1k
10k
100k
1M
10M
INPUT FREQUENCY fIN (Hz)
fIN - R.R (6)
0
VIN= 3.6V
VOUT= 2.6V
-20
-40
-60
-80
IOUT= 10mA
COUT= 1µF
100
1k
10k
100k
1M
INPUT FREQUENCY fIN (Hz)
Revision No : 1
10M
RIPPLE REJECTION R.R (dB)
0
RIPPLE REJECTION R.R (dB)
10M
VIN= 3.6V
fIN - R.R (5)
2007. 2. 9
1M
VOUT= 2.6V
INPUT FREQUENCY fIN (Hz)
-100
10
100k
fIN - R.R (4)
VOUT= 2.6V
-100
10
10k
INPUT FREQUENCY fIN (Hz)
fIN - R.R (3)
0
1k
VIN= 3.6V
VOUT= 2.6V
-20
-40
-60
IOUT = 10mA
COUT = 2.2µF
-80
CBYP = 0.01µF
-100
10
100
1k
10k
100k
1M
10M
INPUT FREQUENCY fIN (Hz)
4/6
KR32S018M/F~KR32S033M/F
VIN= 3.6V
VOUT= 2.6V
-20
-40
-60
-80
IOUT= 100mA
COUT= 1µF
100
1k
10k
100k
1M
TURN ON TIME (µs)
-20
-40
-60
IOUT = 100mA
COUT = 2.2µF
-80
CBYP = 0.01µF
100
1k
10k
100k
1M
INPUT FREQUENCY fIN (Hz)
INPUT FREQUENCY fIN (Hz)
VD - R.R (1)
VD - R.R (2)
10M
100
RIPPLE REJECTION R.R (dB)
50
1mA
40
10mA
IOUT = 100mA
30
20
COUT = 1µF
10
90
1mA
80
70
60
IOUT = 100mA
10mA
50
40
30
20
COUT = 2.2µF
10
CBYP = 0.01µF
0
0
0.1
0.2
0.3
0.1
0.2
0.3
DROPOUT VOLTAGE VD (V)
DROPOUT VOLTAGE VD (V)
CBYPASS - TIME
IOUT - VD
103
102
101 1
10
0
0.4
104
102
103
CAPACITANCE CBYPASS (pF)
2007. 2. 9
VIN= 6V
VOUT= 5V
-100
10
10M
60
0
RIPPLE REJECTION R.R (dB)
0
0
-100
10
RIPPLE REJECTION R.R (dB)
fIN - R.R (8)
DROPOUT VOLTAGE VD (mV)
RIPPLE REJECTION R.R (dB)
fIN - R.R (7)
Revision No : 1
104
0.4
400
300
200
100
0
0
100
200
300
OUTPUT CURRNET IOUT (mA)
5/6
KR32S018M/F~KR32S033M/F
f - NOISE (1)
f - NOISE (2)
10
10
1
NOISE (mV/ Hz )
NOISE (mV/ Hz )
10mA, COUT = 1µF
10-1
10-2
-3
10
10-4
10
1mA
COUT = 1µF
CBYP = 10nF
100
VOUT= 5V
1k
10k
100k
1M
10
VOUT = 5V
COUT = 10µF
Electrolytic
100
1k
10k
100k
1M
10M
10
100mA
10mA
VOUT = 5V
COUT = 22µF
1mA
NOISE (mV/ Hz )
NOISE (mV/ Hz )
1k
10k
100k
1M
100mA
10-2
10-4
10
10M
10mA
10-1
10
Tantalum
CBYP = 10nF
100
1
-3
1mA
VOUT = 5V
COUT = 10µF
Electrolytic
CBYP = 100pF
100
1k
10k
100k
FREQUENCY (Hz)
FREQUENCY (Hz)
f - NOISE (5)
f - NOISE (6)
1M
10M
10
1
10mA
100mA
-1
10
10-2
1mA
VOUT = 5V
10-3 COUT = 10µF
1
10mA
-1
10
100mA
10-2
VOUT = 5V
10-3 COUT = 10µF
Electrolytic
CBYP = 1nF
100
NOISE (mV/ Hz )
NOISE (mV/ Hz )
1mA
-3
f - NOISE (4)
10
1k
10k
100k
FREQUENCY (Hz)
2007. 2. 9
10-2
f - NOISE (3)
10-2
10-4
10
10mA
FREQUENCY (Hz)
10-1
10-4
10
10-1
FREQUENCY (Hz)
1
10
100mA
10-4
10
10M
10
-3
1
Revision No : 1
1M
10M
10-4
10
1mA
Electrolytic
CBYP = 10nF
100
1k
10k
100k
1M
10M
FREQUENCY (Hz)
6/6