KSG13003AR KSG13003AR ◎ SEMIHOW REV.A0,Mar 2009 KSG13003AR KSG13003AR Switch Mode series NPN silicon Power Transistor • High voltage, high speed power switching Absolute Maximum Ratings CHARACTERISTICS SYMBOL RATING UNIT VCBO VCEO VEBO IC ICP IB PC TSTG TJ 700 400 9 1.5 3 0.75 1.5 150 -65~150 V V V A A A W ℃ ℃ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Tc=25℃) Storage Temperature Max. Operating Junction Temperature Electrical Characteristics 1.5 Amperes NPN Silicon Power Transistor 1.5 Watts TC=25℃ unless otherwise noted TO-92L 1. Emitter 2. Collector 3. Base TC=25℃ unless otherwise noted CHARACTERISTICS SYMBOL Test Condition Min Typ. Max Unit Collector-Base Breakdown Voltage VCBO IC=500uA, IE=0 700 V Collector-Emitter Breakdown Voltage VCEO IC=5mA, IB=0 400 V Emitter Cut-off Current IEBO VEB=9V,IC=0 *DC Current Gain hFE1 hFE2 VCE=2V,IC=0.5A VCE=2V,IC=1A *Collector-Emitter Saturation Voltage VCE(sat) IC=0.5A,IB=0.1A IC=1A,IB=0.25A IC=1.5A,IB=0.5A 0.5 1.0 3.0 V V V *Base-Emitter Saturation Voltage VBE(sat) IC=0.5A,IB=0.1A IC=1A,IB=0.25A 1.0 1.2 V V 10 9 5 Cob VCB=10V, f=0.1MHz Current Gain Bandwidth Product fT VCE=10V,IC=0.1A Turn on Time ton Storage Time tstg Fall Time tF Output Capacitance ㎂ 35 ㎊ 21 ㎒ 4 Vcc=125V, Ic=2A IB1=0.2A, IB2= -0.2A RL=125Ω 1.1 ㎲ 4.0 ㎲ 0.7 ㎲ * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% Note. hFE1 Classification Package Mark information. R 9 ~ 16 O 15 ~ 25 Y 20 ~ 30 S AR 13003 YWW Z R YWW Z Pin type (ECB) Y; year code, WW; week code hFE1 Classification ◎ SEMIHOW REV.A0,Mar 2009 KSG13003AR Typical Characteristics ◎ SEMIHOW REV.A0,Mar 2009 KSG13003AR Package Dimensions TO-92L Dimensions in Millimeters ◎ SEMIHOW REV.A0,Mar 2009