LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812*LT1 FEATURE ƽHigh Voltage: VCEO = -50 V. ƽEpitaxial planar type. 3 ƽNPN complement: L2SC1623 ƽPb-Free Package is available. 1 DEVICE MARKING AND ORDERING INFORMATION Marking Shipping M8 3000/Tape&Reel M8 (Pb-Free) 3000/Tape&Reel M6 3000/Tape&Reel M6 (Pb-Free) 3000/Tape&Reel M7 3000/Tape&Reel M7 (Pb-Free) 3000/Tape&Reel Device L2SA812QLT1 L2SA812QLT1G L2SA812RLT1 L2SA812RLT1G L2SA812SLT1 L2SA812SLT1G 2 SOT-23 3 COLLECTOR 1 BASE 2 EMITTER MAXIMUM RATINGS Symbol Rating L2SA812 Unit Collector-Emitter Voltage VCEO -50 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -6 V IC -150 mAdc Symbol Max Unit 200 mW 1.8 mW/oC Collector current-continuoun THERMAL CHARATEERISTICS Characteristic Total Device Dissipation FR-5 Board, (1) PD o TA=25 C o Derate above 25 C Thermal Resistance, Junction to Ambient R θ JA 556 o C/W PD Total Device Dissipation o Alumina Substrate, (2) TA=25 C o Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage Temperature R θJA Tj ,Tstg 200 mW 2.4 mW/oC 417 -55 to +150 o C/W o C L2SA812-1/5 LESHAN RADIO COMPANY, LTD. L2SA812*LT1 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)CEO -50 - - V V(BR)EBO -6 - - V V(BR)CBO -60 - - V (VCB=-50V) ICBO - - -0.1 µA Emitter Cutoff Current (VBE=-6V) IEBO -0.1 µA OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC=-1mA) Emitter-Base Breakdown Voltage (IE=-50 µΑ ) Collector-Base Breakdown Voltage (IC=-50 µA) Collector Cutoff Current ON CHARACTERISTICS DC Current Gain (IC=-1mA,VCE=-6.0V) 120 hFE Collector-Emitter Saturation Voltage (IC=-100mA,IB=-10mA) - 560 VCE(sat) - -0.18 -0.3 V VBE -0.58 -0.62 -0.68 V Current-Gain-Bandwidth Product (VCE=-6.0V,IE =-10mA) Ft - 180 - MHz Output Capacitance(VCE = -10V, IE=0, f=1.0MHz) Cobo 4.5 - pF Base -Emitter On Voltage IE=-1.0mA,VCE=-6.0V) SMALL-SIGNAL CHARACTERISTICS - hFE Values are classified as followes NOTE: * Q R S hFE 120~270 180~390 270~560 L2SA812-2/5 LESHAN RADIO COMPANY, LTD. L2SA812*LT1 Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics( ) –50 I C, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (mA) –20 –35.0 –10 VCE= –10 V T A = 100°C 25°C – 40°C –10 –50 –2 –1 –0.5 T A = 25°C –28.0 –8 –24.5 –21.0 –6 –17.5 –14.0 –4 –10.5 –7.0 –2 –3.5µA –0.2 –0.1 I B =0 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 0 –1.6 –0.4 –0.8 –1.2 –1.6 –2.0 V CE , COLLECTOR TO EMITTER VOLTAGE (V) V BE , BASE TO EMITTER VOLTAGE(V) Fig.3 Grounded emitter output characteristics( ) Fig.4 DC current gain vs. collector current ( ) –100 500 T A = 25°C –80 –60 VCE= –5 V –3V –1V T A = 25°C 500 450 400 350 300 h FE, DC CURRENT GAIN I C, COLLECTOR CURRENT (mA) –31.5 –250 –200 –150 –40 –100 –20 –50 µA 200 100 50 I B =0 0 0 –1 –2 –3 –4 –5 –0.2 V CE , COLLECTOR TO EMITTER VOLTAGE (V) –0.5 –1 –2 –5 –10 –20 –50 –100 I C, COLLECTOR CURRENT (mA) Fig.6 Collector-emitter saturation voltage vs. Fig.5 DC current gain vs. collector current ( ) 500 V CE(sat), COLLECTOR SATURATION VOLTAGE(V) collector current ( ) T A = 100°C h FE, DC CURRENT GAIN 25°C –40°C 200 100 50 VCE= – 6V –0.2 –0.5 –1 –2 –5 –10 –20 I C, COLLECTOR CURRENT (mA) –50 –100 –1 T A = 25°C –0.5 –0.2 I C /I B = 50 20 –0.1 10 –0.05 –0.2 –0.5 –1 –2 –5 –10 –20 –50 –100 I C, COLLECTOR CURRENT (mA) L2SA812-3/5 LESHAN RADIO COMPANY, LTD. L2SA812*LT1 Fig.8 Gain bandwidth product vs. emitter current 1000 –1 T A = 25°C V CE = –12V f r , TRANSITION FREQUENCY(MHz) I C /I B = 10 –0.5 –0.2 T A = 100°C 25°C –40°C –0.1 –0.05 –0.2 –0.5 –1 –2 –5 –10 –20 –50 500 200 100 50 –100 –0.2 –0.5 –1 –2 –5 –10 –20 –50 –100 I E, EMITTER CURRENT (mA) I C, COLLECTOR CURRENT (mA) Fig.9 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) 20 T A = 25°C f =1MHz I E = 0A I C = 0A C ib 10 C ob 5 2 –0.5 –1 –2 –5 –10 –20 V CB, COLLECTOR TO BASE VOLTAGE (V) V EB, EMITTER TO BASE VOLTAGE (V) L2SA812-4/5 LESHAN RADIO COMPANY, LTD. L2SA812*LT1 SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm L2SA812-5/5