LESHAN RADIO COMPANY, LTD. Medium Power Transistor NPN silicon L2SC2411K*LT1 FEATURE 3 ƽEpitaxial planar type ƽComplementary to L2SA1036K 1 ƽPb-Free package is available 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT– 23 (TO–236AB) Marking Shipping L2SC2411KPLT1 CP 3000/Tape&Reel L2SC2411KPLT1G (Pb-Free) CP 3000/Tape&Reel L2SC2411KQLT1 CQ 3000/Tape&Reel L2SC2411KQLT1G (Pb-Free) CQ 3000/Tape&Reel L2SC2411KRLT1 CR 3000/Tape&Reel L2SC2411KRLT1G (Pb-Free) CR 3000/Tape&Reel 3 COLLECTOR 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 40 32 5 0.5 0.2 150 -55~+150 Unit V V V A* W °C °C *PC must not be exceeded. ELECTRICAL CHARACTERISTICS(TA = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltgae Collector cutoff current Emitter cutoff current DC current transfer ratio Collcetor-emitter saturation voltage Transition frequency Output capacitance Symbol Min. BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob 40 32 5 82 - Typ 250 6.0 Max. 1 1 390 0.4 - Unit V V V µA µA V MHz pF Conditions IC=100µA IC=1mA IE=100µA VCB=20V VEB=4V VCE=3V IC/IB=500mA/50mA VCE=5V,IE=-20mA,f=100MHz VCB=10V,IE=0A,f=1MHz hFE values are classified as follows: Item P hFE 82~180 Q R 120~270 180~390 L2SC2411K*LT1-1/4 LESHAN RADIO COMPANY, LTD. L2SC2411K*LT1 Electrical characteristic curves(TA = 25°C) 1000 100 COLLECTOR CURRENT : IC(mA) 200 Ta=100OC C COLLECTOR CURRENT : I (mA) 100 VCE =6V 500 50 25OC 80OC 25OC 20 10 55 OC 5 2 1 0.5 Ta = 25OC 0.45m A 0.50m 0.40mA 0.35mA 0.30mA 0.25mA 50 0.20mA 0.15mA 0.10mA 0.05mA 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 1 Grounded emitter propagation characteristics 500 Ta = 25OC 2mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 400 300 0.8mA 200 0.6mA 0.4mA 100 0.2mA 0 1 2 3 4 I B= 0A 5 COLLECTOR TO EMITTER VOLTAGE : VCE(V) Fig.3 Fig.2 Grounded emitter output characteristics(II) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.1 2 3 5 COLLECTOR TO EMITTER VOLTAGE : VCE(V) BASE TO EMITTER VOLTAGE : VBE(V) 0 I B = 0A 4 0 0.1 0.2 COLLECTOR CURRENT : IC(mA) A 1 Grounded emitter output characteristics(I) Ta = 25OC l C /l B = 10 0.5 0.2 0.1 0.05 0.02 0.5 1 2 5 10 20 50 100 200 500 1000 COLLECTOR TO EMITTER VOLTAGE : VCE(V) Fig.4 Collector-emitter saturation voltage vs. collector current L2SC2411K*LT1-2/4 LESHAN RADIO COMPANY, LTD. L2SC2411K*LT1 Electrical characteristic curves(TA = 25°C) 500 TRANSITION FREQUENCY : fT(MHz) V CE = 3V 500 O 200 100 C Ta = 100O 75 C O 50 C O 25 C O 0 C O 25 C OC 50 50 20 0.5 1 2 5 10 20 50 100 200 O Ta = 25 C V CE = 5V 200 100 50 500 1000 0.5 1 2 COLLECTOR CURRENT : IC(mA) 5 10 20 EMITTER CURRENT : IE(mA) Fig.6 Gain bandwidth product vs. emitter current Fig.5 DC current gain vs. collector current O : Cib(pF) 0.2 Ta = 25 C f = 1MHz I E =0A I C = 0A 50 Cib EMITTER INPUT CAPACITANCE 10 0.1 COLLECTOR OUTPUT CAPACITANCE : Cob(pF) DC CURRENT GAIN : h FE 1000 20 Cob 10 5 2 0.5 1 2 5 10 COLLECTOR TO BASE VOLTAGE : V 20 50 (V) CE EMITTER TO BASE VOLTAGE: VEB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage L2SC2411K*LT1-3/4 50 LESHAN RADIO COMPANY, LTD. L2SC2411K*LT1 SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm L2SC2411K*LT1-4/4