LIGITEK LA73B-1

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
LED ARRAY
LA73B-1/G.HR.G
DATA SHEET
DOC. NO :
QW0905-L A73B-1/G.HR.G
REV.
:
A
DATE
:
04 - Oct - 2005
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LA73B-1/G.HR.G
Page 1/5
Package Dimensions
2.4±0.5
4.4
G
11.6
2.9
HR
15.3
5.08
G
2.5
0.6± 0.1
4.0± 0.5
0.5±0.05
2.54TYP
+
0.5±0.05
4.65± 0.5
7.15±0.5
9.65± 0.5
LG2640-1
LHR2640-1
2.9
3.3
3.1
4.3
1.5MAX
25.0MIN
□0.5
TYP
1.0MIN
2.54TYP
+
-
Note : 1.All dimension are in millimeter tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 2/5
PART NO. LA73B-1/G.HR.G
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Symbol
Parameter
UNIT
G
HR
Forward Current
IF
30
30
mA
Peak Forward Current
Duty 1/10@10KHz
IFP
120
100
mA
Power Dissipation
PD
100
100
mW
Reverse Current @5V
Ir
10
μA
Operating Temperature
Topr
-40 ~ +85
℃
Storage Temperature
Tstg
-40 ~ +100
℃
Soldering Temperature
Tsol
Max 260 ℃ for 5 sec Max
(2mm from body)
Typical Electrical & Optical Characteristics (Ta=25 ℃)
PART NO
COLOR
MATERIAL
Emitted
Forward
Peak Spectral
voltage
wave halfwidth
length △λ nm @ 20mA(V)
λPnm
Green Green Diffused
GaAlAs
Red
@10mA(mcd)
Viewing
angle
2θ 1/2
(deg)
Min. Max. Min. Typ.
Lens
GaP
Luminous
intensity
565
30
1.7
2.6
12
20
50
660
20
1.5
2.4
65
120
50
LA73B-1/G.HR.G
Red Diffused
Note : 1.The forward voltage data did not including ± 0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LA73B-1/G.HR.G
Page 3/5
Typical Electro-Optical Characteristics Curve
G CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.5
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
1.0
2.0
3.0
4.0
5.0
1.0
10
1.2
1.1
1.0
0.9
0.8
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
500
550
600
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
Fig.4 Relative Intensity vs. Temperature
Relative Intensity@20mA
Normalize @25℃
Forward Voltage@20mA
Normalize @25℃
Fig.3 Forward Voltage vs. Temperature
-20
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
650
80
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 4/5
PART NO. LA73B-1/G.HR.G
Typical Electro-Optical Characteristics Curve
HR CHIP
Fig.1 Forward current vs. Forward Voltage
3.0
Relative Intensity@20mA
1000
Forward Current(mA)
Fig.2 Relative Intensity vs. Forward Current
100
10
1.0
0.1
1.0
2.0
3.0
4.0
2.5
2.0
1.5
1.0
0.5
0
5.0
1.0
10
Fig.4 Relative Intensity vs. Temperature
1.2
Relative Intensity@20mA
Forward Voltage@20mA
Fig.3 Forward Voltage vs. Temperature
1.1
1.0
0.9
0.8
-20
-0
20
40
60
80
100
Relative Intensity@20mA
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0
650
700
Wavelength (nm)
3.0
2.5
2.0
1.5
1.0
0.5
0
-40
-20
-0
20
40
60
80
Ambient Temperature( ℃)
Ambient Temperature( ℃)
600
1000
Forward Current(mA)
Forward Voltage(V)
-40
100
750
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LA73B-1/G.HR.G
Page 5/5
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=20mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resisance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under ondition
of high temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5 ℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5 ℃
2.RH=90 %~95%
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hous.
1.Ta=105 ℃±5℃&-40 ℃±5℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5 ℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5 ℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
Thermal Shock Test
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11
PACKING SPECIFICATION
1.200 PCS / BAG
2. 8 BAG / INNER BOX
SIZE : L X W X H 33.5cm X 19cm X 7.5cm
L
W
H
3. 12 INNER BOXES / CARTON
SIZE : L X W X H 58.5cm X 34cm X 34cm
L
W
C/NO:
MADE IN CHINA
.
NO
M
IT E Y :
Q'T ,:
W :
N,
,
W
G,
S
PC
s
g
k
s
kg
H