Ordering number : EN*5409 CMOS LSI LE28CV1001M, T-12/15 1MEG (131072 words × 8 bits) Flash Memory Overview Package Dimensions The LE28CV1001M, T Series ICs are 1 MEG flash memory products that feature a 131072-word × 8-bit organization and 3.3 V single-voltage power supply operation. CMOS peripheral circuits are adopted for high speed, low power, and ease of use. A 128-byte page rewrite function provides rapid data rewriting. unit: mm 3205-SOP32 [LE28CV1001M] Features • Highly reliable 2-layer polysilicon CMOS flash EEPROM process • Read and write operations using a 5 V single-voltage power supply • Fast access time: 120 and 150 ns • Low power dissipation — Operating current (read): 12 mA (maximum) — Standby current: 15 µA (maximum) • Highly reliable read/write —Erase/write cycles: 104/103 cycles —Data retention time: 10 years • Address and data latches • Fast page rewrite operation — 128 bytes per page — Byte/page rewrite time: 5 ms (typical) — Chip rewrite time: 5 s (typical) • Automatic rewriting using internally generated Vpp • Rewrite complete detection function — Toggle bit — Data polling • Hardware and software data protection functions • All inputs and outputs are TTL compatible. • Pin assignment conforms to the JEDEC byte-wide EEPROM standard. • Package SOP 32-pin (525 mil) plastic package:LE28CV1001M TSOP 32-pin (8 × 20 mm) plastic package:LE28CV1001T SANYO: SOP32 unit: mm 3224-TSOP32 [LE28CV1001T] SANYO: TSOP32 (TYPE-I) These FLASH MEMORY products incorporate technology licensed Silicon Storage Technology, Inc. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 93096HA (OT) No. 5409-1/14 LE28CV1001M, T-12/15 Block Diagram Pin Assignments Pin Functions Symbol Pin Function Address input Supply the memory address to these pins. The address is latched internally during a write cycle. Data input and output These pins output data during a read cycle and input data during a write cycle. Data is latched internally during a write cycle. Outputs go to the high-impedance state when either OE or CE is high. CE Chip enable The device is active when CE is low. When CE is high, the device becomes unselected and goes to the standby state. OE Output enable Makes the data output buffers active. OE is a low-active input. WE Write enable Makes the write operation active. WE is an active-low input. VDD Power supply Apply 3.3 V ±0.3 to this pin. VSS Ground N.C. No connection A16 to A0 DQ7 to DQ0 These pins must be left open. No. 5409-2/14 LE28CV1001M, T-12/15 Function Logic Mode CE OE WE VIL VIL VIH Write VIL VIH Standby VIH X X X Read Write inhibit A16 to A0 DOUT VIL AIN DIN X X High-Z VIL X X High-Z/DOUT X VIH X High-Z/DOUT A16 to A10 = VIL, A8 to A1 = VIL, Product identification VIL DQ7 to DQ0 AIN VIL VIH A9 = 12 V, A0 = VIL A16 to A10 = VIL, A8 to A1 = VIL, A9 = 12 V, A0 = VIH Manufacturer code (BF) Device code (07) Software Data Protection Command Byte sequence Set protection Reset protection Address Data Address Data Write 0 5555 AA 5555 AA Write 1 2AAA 55 2AAA 55 Write 2 5555 A0 5555 80 Write 3 5555 AA Write 4 2AAA 55 Write 5 5555 20 Note: Address format A14 to A0 (hex.) Software Product ID Entry Command and Exit Command Codes Byte sequence Protect ID Entry Protect ID Exit Address Data Address Data Write 0 5555 AA 5555 AA Write 1 2AAA 55 2AAA 55 Write 2 5555 80 5555 F0 Write 3 5555 AA Write 4 2AAA 55 Write 5 5555 60 Notes on software Product ID Command Code: 1. Command Code Address format: A14 to A0 (hex.) 2. With A14 to A1 = VIL, Manufacturer Code is read with A0 = VIL to be BFH LE28CV1001M, T Device Code is read with A0 = VIH to be 07H 3. The device does not remain in Software Product ID Mode if powered down. 4. A16 and A15 at VIH or VIL. No. 5409-3/14 LE28CV1001M, T-12/15 Device Operation This Sanyo 1 MEG flash memory allows electrical rewrites using a 3.3 V single-voltage power supply. The LE28CV1001M, T series products are pin and function compatible with the industry standards for this type of product. Read The LE28CV1001M, T series products read operations are controlled by CE and OE. The host must set both pins to the low level to acquire the output data. CE is used for chip selection. When CE is at the high level, the chip will be in the unselected state and only draw the standby current. OE is used for output control. The output pins go to the highimpedance state when either CE or OE is high. See the timing waveforms (Figure 1) for details. Page Write Operation The write operation starts when both CE and WE are at the low level, and furthermore OE is at the high level. The write operation is executed in two stages. The first stage is a byte load cycle in which the host writes to the LE28CV1001M, T series products internal page buffer. The second stage is an internal programming cycle in which the data in the page buffer is written to the nonvolatile memory cell array. In the byte load cycle, the address is latched on the falling edge of either CE or WE, whichever occurs later. The input data is latched on the rising edge of either CE or WE, whichever occurs first. The internal programming cycle starts if either WE or CE remains high for 200 µs (t ). Once this programming cycle starts, the operation continues until the programming operation is completely done. This operation executes within 5 ms (typical). Figures 2 and 3 show the WE and CE control write cycle timing diagrams, and Figure 9 shows the flowchart for this operation. In the page write operation, 128 bytes of data can be written to the LE28CV1001M, T series products internal page buffer before the internal programming cycle. All the data in the page buffer is written to the memory cell array during the 5 ms (typical) internal programming cycle. Therefore the LE28CV1001M, T series products page write function can rewrite all memory cells in 5 seconds (typical). The host can perform any other activities desired, such as moving data at other locations within the system and preparing the data required for the next page write, during the period prior to the completion of the internal programming cycle. In a given page write operation, all the data bytes loaded into the page buffer must be for the same page address specified by address lines A7 through A16. All data that was not explicitly loaded into the page buffer is set to FFH. Figure 2 shows the page write cycle timing diagram. If the host loads the second data byte into the page buffer within the 100 µs byte load cycle time (t ) after the first byte load cycle the LE28CV1001M, T series products stop in the page load cycle thus allowing data to be loaded continuously. The page load cycle terminates if additional data is not loaded into the internal page buffer within 200 µs (t ) after the previous byte load cycle, as in the case where WE does not switch from high to low after the last WE rising edge. The data in the page buffer can be rewritten in the next byte load cycle. The page load period can continue indefinitely as long as the host continues to load data into the device within the 100 µs byte load cycle. The page that is loaded is determined by the page address of the last byte loaded. BLCO BLC BLCO Detecting the Write Operation State The LE28CV1001M, T series products provide two functions for detecting the completion of the write cycle. These functions are used to optimize the system write cycle time. These functions are based on detecting the states of the Data polling bit (DQ7) and the toggle bit (DQ6). Data Polling (DQ7) The LE28CV1001M, T series products output to DQ7 the inverse of the last data loaded during the page and byte load cycles when the internal programming cycle is in progress. The last data loaded will be read from DQ7 when the internal programming cycle completes. Figure 4 shows the Data polling cycle timing diagram and Figure 10 shows the flowchart for this operation. No. 5409-4/14 LE28CV1001M, T-12/15 Toggle Bit (DQ6) Data values of 0 and 1 are output alternately for DQ6, that is DQ6 is toggled between 0 and 1, during the internal programming cycle. When the internal programming cycle completes this toggling is stopped and the device becomes ready to execute the next operation. Figure 5 shows the toggle bit timing diagram and Figure 10 shows the flowchart for this operation. Data Protection Hardware Data Protection Noise and glitch protection: The LE28CV1001 does not execute write operations for WE or OE pulses that are 15 ns or shorter. Power (VDD) on and cutoff detection: The programming operation is disabled when VDD is 2.5 V or lower. Write inhibit mode: Writing is disabled when OE is low and either CE is high or WE is high. Use this function to prevent writes from occurring when the power is being turned on or off. Software Data Protection The LE28CV1001 implements the optional software data protection function recognized by JEDEC. This function requires that a 3-byte load operation to be performed before a write operation data load. The 3-byte load sequence starts a page load cycle without activating any write operation. Thus this is an optimal protection scheme for unintended write cycles triggered by noise associated with powering the chip on or off. Note that the LE28CV1001 is shipped with the software data protection function disabled. The software data protection circuit is activated by executing a 3-byte byte load cycle in advance of the data sequence in the page load cycle. (See Figure 6.) This causes the device to automatically enter data protection mode. After this, write operations require a 3-byte byte load cycle to be executed in advance. A 6-byte write sequence is required to switch the device out of this protection mode. Figure 7 shows the timing diagram. If a write operation is attempted in software protection mode, all device functions are disabled for 200 µs. Figure 11 shows the flowchart for this operation. Product Identification The device identification code is used for recognizing the device and its manufacturer. This mode can be used by hardware and software. The hardware operating mode is used to recognize algorithms that match the device when an external programming unit is used. Also, user systems can recognize the product number using software product identification mode. Figure 12 shows the flowchart for this operation. The manufacturer and device codes are the same in both modes. No. 5409-5/14 LE28CV1001M, T-12/15 Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Ratings Unit Note Supply voltage VDD –0.5 to +6.0 V 1 Input pin voltage VIN –0.5 to VDD + 0.5 V 1, 2 DQ pin voltage VOUT –0.5 to VDD + 0.5 V 1, 2 A9 pin voltage VA9 –0.5 to +14.0 V 1, 3 mW 1, 4 Allowable power dissipation Pd max 600 Operating temperature Topr 0 to +70 °C 1 Storage temperature Tstg –65 to +150 °C 1 Notes:1. The device may be destroyed by the application of stresses in excess of the absolute maximum ratings. 2. –1.0 V to VDD + 1.0 V for pulses less than 20 ns 3. –1.0 V to +14 V for pulses less than 20 ns DC Recommended Operating Ranges at Ta = 0 to +70°C Symbol min typ max Unit Supply voltage Parameter VDD 3.0 3.3 3.6 V Input low-level voltage VIL Input high-level voltage VIH 0.6 V 2.0 V DC Electrical Characteristics at Ta = 0 to +70°C, VDD = 3.3 V ± 0.3 V Parameter Symbol Conditions min typ max Unit 12 mA 15 mA 1 mA Current drain during read ICCR CE = OE = VIL, WE = VIH, all DQ pins open, address inputs = VIH or VIL, operating frequency = 1/tRC (minimum), VDD = VDD max Current drain during write ICCW CE = WE = VIL, OE = VIH, VDD = VDD max TTL standby current ISB1 CE = OE = WE = VIH, VDD = VDD max CMOS standby current ISB2 CE = OE = WE = VDD – 0.3 V, VDD = VDD max 20 µA Input leakage current ILI VIN = VSS to VDD, VDD = VDD max 10 µA Output leakage current ILO VIN = VSS to VDD, VDD = VDD max 10 µA Output low-level voltage VOL IOL = 2.1 mA, VDD = VDD min 0.4 V Output high-level voltage VOH IOH = –400 µA, VDD = VDD min 2.4 V Input/Output Pin Capacitances at Ta = 25°C, VDD = 3.3 V ± 0.3 V, f = 1 MHz Parameter Symbol Conditions max Unit Input/output capacitance CDQ VDQ = 0 V 12 pF Input capacitance CIN VIN = 0 V 6 pF max Unit Power on Timing Parameter Symbol Conditions Time from power on until first read operation tPU-READ 100 µs Time from power on until first write operation tPU-WRITE 5 ms No. 5409-6/14 LE28CV1001M, T-12/15 AC Electrical Characteristics at Ta = 0 to +70°C, VDD = 3.3 V ± 0.3 V AC Testing Conditions (See Figure 8) Input rise and fall time: ..................10 ns (max.) Output load: ....................................1 TTL gate + 30 pF Read Cycle LE28CV1001M, T Parameter Symbol -12 min -15 max min Unit max Read cycle time tRC CE access time tCE 120 150 Address access time tAA 120 150 ns OE access time tOE 80 90 ns 120 150 Output low-impedance time from CE tCLZ 0 0 Output low-impedance time from OE tOLZ 0 0 Output high-impedance time from CE tCHZ Output high-impedance time from OE tOHZ Output valid time from address input tOH ns ns ns 50 50 0 ns 50 ns 50 ns 0 ns Page Write Cycle Parameter Symbol min typ* max Unit 5 10 ms Write cycle time (erase and program) tWC Address setup time tAS 0 Address hold time tAH 100 ns CE setup time tCS 0 ns CE hold time tCH 0 ns OE setup time tOES 0 ns OE hold time tOEH 0 ns CE pulse width tCP 120 ns WE pulse width tWP 120 ns Data setup time tDS 100 ns Data hold time tDH 0 ns Byte load cycle time tBLC 0.10 Byte load time out time tBLCO 200 ns 100 µs µs Note: * typ is reference value at VDD = 3.3 V and Ta = 25°C Figure 1 Read Cycle No. 5409-7/14 LE28CV1001M, T-12/15 Figure 2 WE Control Page Write Cycle Figure 3 CE Control Page Write Cycle No. 5409-8/14 LE28CV1001M, T-12/15 Figure 4 Data Polling Figure 5 Toggle Bit Figure 6 Enable Software Data Protection No. 5409-9/14 LE28CV1001M, T-12/15 Figure 7 Disable Software Data Protection Figure 8 AC I/O Reference Waveform No. 5409-10/14 LE28CV1001M, T-12/15 Figure 9 Write Algorithm No. 5409-11/14 LE28CV1001M, T-12/15 Figure 10 Write Operating State Detection No. 5409-12/14 LE28CV1001M, T-12/15 Figure 11 Software Data Protection Flowcharts No. 5409-13/14 LE28CV1001M, T-12/15 Figure 12 Product ID Flowcharts ■ No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. ■ Anyone purchasing any products described or contained herein for an above-mentioned use shall: ➀ Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ➁ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. ■ Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 1996. Specifications and information herein are subject to change without notice. No. 5409-14/14