NSC LM4431M3-2.5

LM4431
Micropower Shunt Voltage Reference
n Tolerates capacitive loads
n Fixed reverse breakdown voltage of 2.50V
General Description
Ideal for space critical applications, the LM4431 voltage reference is available in the sub-miniature (3 mm x 1.3 mm)
SOT-23 surface-mount package. The LM4431’s advanced
design eliminates the need for an external stabilizing capacitor while ensuring stability with any capacitive load, thus
making the LM4431 easy to use. The operating current
range is 100 µA to 15 mA.
The LM4431 utilizes fuse and zener-zap reverse breakdown
voltage trim during wafer sort to ensure that the parts have
an accuracy of better than ± 2.0% at 25˚C. Bandgap reference temperature drift curvature correction and low dynamic
impedance ensure stable reverse breakdown voltage accuracy over a wide range of operating temperatures and currents.
Key Specifications
n
n
n
n
n
Output voltage tolerance 25˚C: ± 2.0% (max)
Low output noise (10 Hz to 10 kHz): 35 µVrms (typ)
Wide operating current range: 100 µA to 15 mA
Commercial temperature range: 0˚C to +70˚C
Low temperature coefficient: 30 ppm/˚C (typ)
Applications
n
n
n
n
n
n
n
Features
n Small package: SOT-23
n No output capacitor required
Portable, Battery-Powered Equipment
Data Acquisition Systems
Instrumentation
Process Control
Energy Management
Product Testing
Power Supplies
Connection Diagram
SOT-23
DS011374-1
* This pin must be left floating or connected to pin 2.
Top View
Order Number LM4431M3-2.5
See NS Package Number M03B
(JEDEC Registration TO-236AB)
SOT-23 Package Marking Information
Only three fields of marking are possible on the SOT-23’s small surface. The following table gives the meaning of the three
fields.
Part Marking
S2E
Field Definition
First Field:
S = Reference
Second Field:
2 = 2.500V Voltage Option
Third Field:
E = Initial Reverse Breakdown Voltage Tolerance of ± 2.0%
© 1998 National Semiconductor Corporation
DS011374
www.national.com
LM4431 Micropower Shunt Voltage Reference
July 1998
Absolute Maximum Ratings (Note 1)
ESD Susceptibility
Human Body Model (Note 3)
2 kV
Machine Model (Note 3)
200V
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Reverse Current
Forward Current
Power Dissipation (TA = 25˚C) (Note 2)
M3 Package
Storage Temperature
Lead Temperature
M3 Package
Vapor phase (60 seconds)
Infrared (15 seconds)
20 mA
10 mA
Operating Ratings(Notes 1, 2)
306 mW
−65˚C to +150˚C
Temperature Range
(Tmin ≤ TA ≤ Tmax)
Reverse Current
LM4431-2.5
+215˚C
+220˚C
0˚C ≤ TA ≤ +70˚C
100 µA to 15 mA
LM4431-2.5
Electrical Characteristics
Boldface limits apply for TA = TJ = TMIN to TMAX; all other limits TA = TJ = 25˚C.
Symbol
Parameter
Conditions
Typical
LM4431M3
Units
(Note 4)
Limits
(Limit)
(Note 5)
VR
Reverse Breakdown Voltage
Reverse Breakdown
VoltageTolerance
IRMIN
∆VR/∆T
2.500
Minimum Operating Current
Coefficient
± 30
± 30
± 30
Reverse Breakdown Voltage
IRMIN ≤ IR ≤ 1 mA
0.4
Change with Operating
Current Change
1 mA ≤ IR ≤ 15 mA
± 50
mV (max)
100
µA (max)
µA
ppm/˚C
ppm/˚C
ppm/˚C
mV
1.0
mV (max)
1.2
mV (max)
8.0
mV (max)
25
mV (max)
2.5
mV
IR = 1 mA, f = 120 Hz
IAC = 0.1 IR
1.0
Ω
Wideband Noise
IR = 100 µA
35
µVrms
Reverse Breakdown Voltage
10 Hz ≤ f ≤ 10 kHz
t = 1000 hrs
120
ppm
ZR
Reverse Dynamic Impedance
eN
∆VR
V
45
IR = 10 mA
IR = 1 mA
IR = 100 µA
Average Reverse Breakdown
Voltage Temperature
∆VR/∆IR
IR = 100 µA
IR = 100 µA
Long Term Stability
T = 25˚C ± 0.1˚C
IR = 100 µA
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax − TA)/θJA or the number
given in the Absolute Maximum Ratings, whichever is lower. For the LM4431, TJmax = 125˚C, and the typical thermal resistance (θJA), when board mounted, is
326˚C/W for the SOT-23 package.
Note 3: The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin. The machine model is a 200 pF capacitor discharged directly into each pin.
Note 4: Typicals are at TJ = 25˚C and represent most likely parametric norm.
Note 5: Limits are 100% production tested at 25˚C. Limits over temperature are guaranteed through correlation using Statistical Quality Control (SQC) methods. The
limits are used to calculate National’s AOQL.
www.national.com
2
Typical Performance Characteristics
Temperature Drift for Different
Average Temperature Coefficient
Output Impedance vs Frequency
DS011374-3
DS011374-2
Reverse Characteristics and
Minimum Operating Current
Noise Voltage
DS011374-5
DS011374-4
Start-Up Characteristics
LM4431-2.5
RS = 30k
DS011374-6
DS011374-7
3
www.national.com
Functional Block Diagram
DS011374-8
Applications Information
flows through the load (IL) and the LM4431 (IQ). Since load
current and supply voltage may vary, RS should be small
enough to supply at least the minimum acceptable IQ to the
LM4431 even when the supply voltage is at its minimum and
the load current is at its maximum value. When the supply
voltage is at its maximum and IL is at its minimum, RS should
be large enough so that the current flowing through the
LM4431 is less than 15 mA.
RS is determined by the supply voltage, (VS), the load and
operating current, (IL and IQ), and the LM4431’s reverse
breakdown voltage, VR.
The LM4431 is a micro-power curvature-corrected 2.5V
bandgap shunt voltage reference. For space critical applications, the LM4431 is available in the sub-miniature SOT-23
surface-mount package. The LM4431 has been designed for
stable operation without the need of an external capacitor
connected between the “+” pin and the “−” pin. If, however, a
bypass capacitor is used, the LM4431 remains stable. The
operating current range is 100 µA to 15 mA.
The LM4431’s SOT-23 package has a parasitic Schottky diode between pin 2 (−) and pin 3 (Die attach interface contact). Therefore, pin 3 of the SOT-23 package must be left
floating or connected to pin 2.
In a conventional shunt regulator application (Figure 1) , an
external series resistor (RS) is connected between the supply voltage and the LM4431. RS determines the current that
Typical Applications
DS011374-9
FIGURE 1. Shunt Regulator
www.national.com
4
Typical Applications
(Continued)
DS011374-10
FIGURE 2. Bounded amplifier reduces saturation-induced delays and can prevent succeeding stage damage.
Nominal clamping voltage is ± 3.9V (LM4431’s reverse breakdown voltage +2 diode VF).
DS011374-11
FIGURE 3. Protecting Op Amp input. The bounding voltage is ± 4V with the LM4431
(LM4431’s reverse breakdown voltage + 3 diode VF).
5
www.national.com
Typical Applications
(Continued)
DS011374-12
FIGURE 4. Programmable Current Source
DS011374-14
DS011374-13
FIGURE 5. Precision 1 µA to 1 mA Current Sources
www.national.com
6
7
LM4431 Micropower Shunt Voltage Reference
Physical Dimensions
inches (millimeters) unless otherwise noted
Plastic Surface Mount Package (M3)
NS Package Number M03B
(JEDEC Registration TO-236AB)
LIFE SUPPORT POLICY
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:
2. A critical component in any component of a life support
1. Life support devices or systems are devices or sysdevice or system whose failure to perform can be reatems which, (a) are intended for surgical implant into
sonably expected to cause the failure of the life support
the body, or (b) support or sustain life, and whose faildevice or system, or to affect its safety or effectiveness.
ure to perform when properly used in accordance
with instructions for use provided in the labeling, can
be reasonably expected to result in a significant injury
to the user.
National Semiconductor
Corporation
Americas
Tel: 1-800-272-9959
Fax: 1-800-737-7018
Email: [email protected]
www.national.com
National Semiconductor
Europe
Fax: +49 (0) 1 80-530 85 86
Email: [email protected]
Deutsch Tel: +49 (0) 1 80-530 85 85
English Tel: +49 (0) 1 80-532 78 32
Français Tel: +49 (0) 1 80-532 93 58
Italiano Tel: +49 (0) 1 80-534 16 80
National Semiconductor
Asia Pacific Customer
Response Group
Tel: 65-2544466
Fax: 65-2504466
Email: [email protected]
National Semiconductor
Japan Ltd.
Tel: 81-3-5620-6175
Fax: 81-3-5620-6179
National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.