LINEAR_DIMENSIONS LND823

DATA SHEET
LND820/821/822/823
POWER MOSFET
GENERAL DESCRIPTION
The LND820 series provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance
and cost-effectiveness.
The TO-220 package is universally preferred
for all commercial-industrial applications at
power dissipation levels to approximately 50
watts. The low thermal resistance and low
package cost of the TO-220 contribute to its
wide acceptance throughout the industry.
SYMBOL
FEATURES
•
VDSS =450V-500V
RDS (on) = 3.0 Ω-4.0 Ω
ID=2.2A and 2.5A
•
•
•
•
•
Dynamic dv/dt Rating
Repetitive Avalanche rated
Fast Switching
Ease of Paralleling
Simple Drive Requirement
PIN DIAGRAM
TO-220
• Linear Dimensions, Inc. • 445 East Ohio Street, Chicago IL 60611 USA • tel 312.321.1810 • fax 312.321.1830 • www.lineardimensions.com •
LND820/821/822/823
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Max
ID@Tc=25ºC
Continuous Drain Current,VGS @ 10V
2.5
ID@Tc=100ºC
Continuous Drain Current, VGS @ 10V
1.6
IDM
Pulsed Drain Current(1)
8.0
Units
A
PD @Tc=25ºC
Power Dissipation
50
W
ID@Tc=25ºC
Linear Derating Factor
0.40
W/ºC
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy(2)
210
mJ
IAR
Avalanche Current (1)
2.5
A
EAR
Repetitive Avalanche Energy (1)
5.0
mJ
dv/dt
Peak Diode Recovery dv/dt(3)
3.5
V/ns
TJ
Operating Junction and Storage
temperature Range
TSTG
-55 to +150
ºC
300
Soldering Temperature, for 10
seconds
(1.6mm from case)
THERMAL RESISTANCE
Symbol
Parameter
Min
Typ
Max
RoJC
Junction-to-case
-
-
2.5
RoCS
Case-to-Sink, Flat,
Greased Surface
-
0.50
-
RoJA
Junction-to-Ambint
-
-
62
Units
ºC/W
• Linear Dimensions, Inc. • 445 East Ohio Street, Chicago IL 60611 USA • tel 312.321.1810 • fax 312.321.1830 • www.lineardimensions.com •
LND820/821/822/823
ELECTRICAL CHARACTERISTICS
(TC=25°C unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-source
Breakdown Voltage
∆V(BR)DSS
/ ∆TJ
Breakdown Voltage Temp.
Coefficient
ID(on)
On-State Drain
Current(Note 2)
RDS(ON)
Static Drain-to-Source OnResistace
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
2.0
gfs
Forward
Transconductance
VDS=50V,ID =1.5A(4)
1.5
IDSS
Drain-to-source Leakage
Current (TC=125ºC)
VDS=500V,VGS =0V
VDS= 400V,VGS = 0V
-
VGS=-20V
-
-
100
VGS=-20V
-
-
-100
ID=2.1A
VDS=400V
VGS =10V (4)
-
-
24
3.3
13
-
8.0
8.6
33
16
-
4.5
-
7.5
-
360
92
-
37
td(on)
tr
td(off)
tf
Gate-to-Source Forward
Leakage
Gate-to-Source Reverse
Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-drain(“Miller”)
Charge
Turn-on Delay Time
Rise time
Turn-off Delay time
Fall time
LD
Internal Drain Inductance
LS
Input Source Inductance
Ciss
Coss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
IGSS
Qg
Qqs
Crss
LND-820/822
LND821/823
Conditions
Min
Typ
Max
Units
VGS=0V,
ID = 250µA
500
450
-
-
V
-
0.59
-
V/ºC
2.5
2.2
-
-
A
3.0
4.0
Ω
-
4.0
V
-
-
S
25
250
µA
µA
Reference to 25ºC
ID=1mA
LND820/821
LND821/823
LND820/821
LND822/823
VGS > ID(on) x
RDS(on)Max, VGS=10V
VGS =0V,ID =1.5A(4)
nA
VDD =250V
ID=2.1A
RG=18Ω
RD=100Ω (4)
Between lead 6mm
(0.25 in.)
From package and
center of die contact
VGS=0V
VDS=25V
F=1.0 MHz
nC
ns
nH
pF
• Linear Dimensions, Inc. • 445 East Ohio Street, Chicago IL 60611 USA • tel 312.321.1810 • fax 312.321.1830 • www.lineardimensions.com •
LND820/821/822/823
SOURCE-DRAIN RATING AND CHARACTERISTICS
Symbol
Parameter
Conditions
Min
Typ
Max
MOSFET symbol showing
the integral reverse p-n
junction diode
-
-
2.5
ISM
Continuous Source
Current
Pulsed Source Current
(Body Diode) (1)
-
-
8.0
VSD
Diode Forward Voltage
-
-
1.6
V
trr
Reverse Recovery Time
-
-
520
nS
Qrr
Reverse Recovery Charge
tON
Forward Turn-On Time
IS
TJ=25°C, IS=2.5A,
VGS=0V(4)
TJ=25°C, IF=2.1A,
di/dt=100A/µs (4)
Units
A
0.70 1.4
µC
Intrinsic turn-on time is negligible (turn-on is dominated by
LS+LD)
Notes : 1 : Repetitvie rating :pulse width limited by max. junction temperature
2 : VDD=50V, starting TJ =25°C,L=60mH RG=25Ω, IAS =2.5A
3 : ISD ≤ 2.5A, di/dt≤50 A/µs, VDD ≤ V(BR)DSS ,TJ≤150°C
4 : Pulse width≤ 300µs; duty cycle≤ 2%
• Linear Dimensions, Inc. • 445 East Ohio Street, Chicago IL 60611 USA • tel 312.321.1810 • fax 312.321.1830 • www.lineardimensions.com •