E 1010
HEXFET
z
Advanced Process Technology
z
Ultra Low On-Resistance
z
Dynamic dv/dt Rating
®
Power MOSFET
VDSS = 60V
z
175°C Operating Temperature
z
Fast Switching
z
Fully Avalanche Rated
ID = 84A
RDS(ON) =13mΩ
Description
Advanced HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design
that HEXFET power MOSFETs are well known
for, provides the designer with an extremely
efficient and reliable device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all
Pin1–Gate
commercial-industrial applications at power
Pin2–Drain
dissipation levels to approximately 50 watts. The
Pin3–Source
low thermal resistance and low package cost of the
TO-220 contribute to its wide acceptance
Absolute Maximum Ratings
Parameter
Max.
Continuous Drain Current, VGS @ 10V
84.⑦
Continuous Drain Current, VGS @ 10V
59
IDM
Pulsed Drain Current ①
330
PD @TC = 25°C
Power Dissipation
170
W
Linear Derating Factor
1.4
W/°C
Gate-to-Source Voltage
± 20
V
ID @ TC = 25°C
ID @ TC =
100°C
Units
A
VGS
IAR
EAR
Avalanche Current①
50
A
Repetitive Avalanche Energy①
17
mJ
dv/dt
Peak Diode Recovery dv/dt . ③
4.0
V/ns
TJ
Operating Junction and
Storage Temperature Range
-55 to + 175
TSTG
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from
case )
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
1
HEXFET
E 1010
®
Power MOSFET
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Typ.
Max.
Junction-to-Case
–––
0.75
Case-to-Sink, Flat, Greased Surface
0.50
–––
Junction-to-Ambient
–––
62
Units
°C/W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Min. Typ. Max. Units
Drain-to-Source Breakdown Voltage
△V(BR)DSS/△TJ Breakdown Voltage Temp. Coefficient
Test Conditions
60
—
—
—
0.064
—
V/ْC Reference to 25ْC,ID=1mA
mΩ VGS=10V,ID=50A
V
VGS=0V,ID=250uA
RDS(on)
Static Drain-to-Source On-Resistance
—
—
13
VGS(th)
Gate Threshold Voltage
2.0
—
4.0
V
VDS=VGS, ID=250μA
gfs
Forward Transconductance
20
—
—
S
VDS=25V,ID=50A
IDSS
Drain-to-Source Leakage current
—
—
25
—
—
250
Gate-to-Source Forward leakage
—
—
100
Gate-to-Source Reverse leakage
—
—
-100
Qg
Total Gate Charge
—
—
130
Qgs
Gate-to-Source charge
—
—
28
Qgd
Gate-to-Drain ("Miller") charge
—
—
44
td(on)
tr
td(off)
tf
Turn-on Delay Time
—
12
—
Rise Time
—
78
—
Turn-Off Delay Time
—
48
—
Fall Time
—
53
—
LD
Internal Drain Inductance
—
4.5
—
LS
Internal Source Inductance
—
7.5
—
Ciss
Input Capacitance
— 3210 —
Coss
Output Capacitance
—
690
—
Crss
Reverse Transfer Capacitance
—
140
—
EAS
Single Pulse Avalanche Energy.
—
1180 320
IGSS
2
μA
nA
④
④
VDS=60V,VGS=0V
VDS=48V,VGS=0V,TJ=150ْC
VGS=20V
VGS=-20V
ID=50A
nC VDS=48V
VGS=10V See Fig.6 and 13④
VDD=30V
ID=50A
nS
RG=3.6Ω
VGS =10V See Figure 10④
Between lead,
6mm(0.25in.)
nH from package
and center of
die contact
VGS=0V
pF VDS=25V
f=1.0MHZ See Figure 5
mJ
IAS = 50A, L = 260μH
HEXFET
®
E 1010
Power MOSFET
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
.
ISM
Pulsed Source Current
(Body Diode) ①
.
Min.
Typ.
Max.
—
—
84
VSD Diode Forward Voltage
trr
Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-on Time
Notes:
Units
Test Conditions
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
—
—
330
—
—
1.3
V
TJ=25ْC,IS=50A,VGS=0V ④
—
73
110
nS
—
220
330
μC
TJ=25ْC,IF=50A
di/dt=100A/μs ④
Intrinsic turn-on time is neglegible (turn-on is dominated by Ls + LD)
1. Repetitive rating; pulse width limited by
4. Pulse width≤400μs; duty cycle ≤2%.
max. junction temperature.
5. This is a typical value at device destruction and
2. Starting TJ = 25°C, L = 260μH
represents
RG = 25W, IAS = 50A, VGS =10V
operation outside rated limits.
3. ISD≤50A, di/dt≤230A/μs, VDD≤V(BR)DSS,
6. This is a calculated value limited to TJ = 175°C .
TJ≤175°C
7.Calculated continuous current based on
maximum allowable
junction temperature. Package limitation current is
75A.
3