LINER LT1308BCS8

Final Electrical Specifications
LT1308A/LT1308B
High Current, Micropower
Single Cell, 600kHz
DC/DC Converters
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DESCRIPTION
FEATURES
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5V at 1A from a Single Li-Ion Cell
5V at 800mA in SEPIC Mode from Four NiCd Cells
Fixed Frequency Operation: 600kHz
Boost Converter Outputs up to 34V
Starts into Heavy Loads
Automatic Burst ModeTM Operation at
Light Load (LT1308A)
Continuous Switching at Light Loads (LT1308B)
Low VCESAT Switch: 300mV at 2A
Pin-for-Pin Upgrade Compatible with LT1308
Lower Quiescent Current in Shutdown: 1µA (Max)
Improved Accuracy Low-Battery Detector
Reference: 200mV ±2%
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APPLICATIONS
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August 1999
GSM/CDMA Phones
Digital Cameras
LCD Bias Supplies
Answer-Back Pagers
GPS Receivers
Battery Backup Supplies
Handheld Computers
The LT ®1308A/LT1308B are micropower, fixed frequency
step-up DC/DC converters that operate over a 1V to 10V
input voltage range. They are improved versions of the
LT1308 and are recommended for use in new designs. The
LT1308A features automatic shifting to power saving
Burst Mode operation at light loads and consumes just
140µA at no load. The LT1308B features continuous
switching at light loads and operates at a quiescent current
of 2.5mA. Both devices consume less than 1µA in
shutdown.
Low-battery detector accuracy is significantly tighter than
the LT1308. The 200mV reference is specified at ±2% at
room and ±3% over temperature. The shutdown pin
enables the device when it is tied to a 1V or higher source
and does not need to be tied to VIN as on the LT1308. An
internal VC clamp results in improved transient response
and the switch voltage rating has been increased to 36V,
enabling higher output voltage applications.
The LT1308A/LT1308B are available in the 8-lead SO and
14-lead TSSOP packages.
, LTC and LT are registered trademarks of Linear Technology Corporation.
Burst Mode is a trademark of Linear Technology Corporation.
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TYPICAL APPLICATION
L1
4.7µH
Li-Ion
CELL
VIN
C1
47µF
SHUTDOWN
5V
1A
95
LBO
LBI
LT1308B
SHDN
VC
R1*
309k
FB
GND
V IN = 4.2V
85
+
C2
220µF
R2
100k
47k
V IN = 3.6V
90
SW
100pF
EFFICIENCY (%)
+
Converter Efficiency
D1
80
V IN = 2.5V
V IN = 1.5V
75
70
65
60
C1: AVX TAJC476M010
C2: AVX TPSD227M006
D1: IR 10BQ015
L1: MURATA LQH6N4R7
*R1: 169k FOR VOUT = 3.3V
887k FOR VOUT = 12V
55
1308A/B F01
Figure 1. LT1308B Single Li-Ion Cell to 5V/1A DC/DC Converter
50
1
10
100
LOAD CURRENT (mA)
1000
1308A/B F01a
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
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LT1308A/LT1308B
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ABSOLUTE
RATI GS
(Note 1)
VIN, SHDN, LBO Voltage ......................................... 10V
SW Voltage ............................................... – 0.4V to 36V
FB Voltage ....................................................... VIN + 1V
VC Voltage ................................................................ 2V
LBI Voltage ................................................. – 0.1V to 1V
Current into FB Pin .............................................. ±1mA
Operating Temperature Range
Commercial ............................................ 0°C to 70°C
Extended Commerial (Note 2) ........... – 40°C to 85°C
Industrial ........................................... – 40°C to 85°C
Storage Temperature Range ................ – 65°C to 150°C
Lead Temperature (Soldering, 10 sec)................. 300°C
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PACKAGE/ORDER I FOR ATIO
TOP VIEW
VC
1
14 LBO
FB
2
13 LBI
SHDN
3
12 VIN
ORDER PART
NUMBER
LT1308ACF
LT1308BCF
ORDER PART
NUMBER
TOP VIEW
VC 1
8
LBO
FB 2
7
LBI
GND
4
11 VIN
GND
5
10 SW
SHDN 3
6
VIN
GND 4
5
SW
GND
6
9
SW
GND
7
8
SW
LT1308ACS8
LT1308AIS8
LT1308BCS8
LT1308BIS8
S8 PACKAGE
8-LEAD PLASTIC SO
S8 PART MARKING
F PACKAGE
14-LEAD PLASTIC TSSOP
1308B
1308BI
1308A
1308AI
TJMAX = 125°C, θJA = 80°C/W
(Note 6)
TJMAX = 125°C, θJA = 80°C/W
Consult factory for Military grade parts.
ELECTRICAL CHARACTERISTICS
The ● denotes specifications which apply over the full operating temperature range, otherwise specifications are TA = 25°C.
Commercial Grade 0°C to 70°C. VIN = 1.1V, VSHDN = VIN, unless otherwise noted.
SYMBOL PARAMETER
CONDITIONS
MIN
IQ
Quiescent Current
Not Switching, LT1308A
Switching, LT1308B
VSHDN = 0V (LT1308A/LT1308B)
VFB
Feedback Voltage
IB
FB Pin Bias Current
(Note 3)
●
Reference Line Regulation
1.1V ≤ VIN ≤ 2V
2V ≤ VIN ≤ 10V
●
●
1.20
Minimum Input Voltage
gm
Error Amp Transconductance
AV
Error Amp Voltage Gain
fOSC
Switching Frequency
∆I = 5µA
VIN = 1.2V
Maximum Duty Cycle
2
TYP
MAX
UNITS
140
2.5
0.01
240
4
1
µA
mA
µA
1.22
1.24
V
27
80
nA
0.03
0.01
0.4
0.2
%/V
%/V
0.92
1
V
60
µmhos
100
V/V
●
500
600
●
82
90
2
3
4.5
A
350
400
mV
mV
Switch Current Limit
Duty Cyle = 30% (Note 4)
Switch VCESAT
ISW = 2A (25°C, 0°C), VIN = 1.5V
ISW = 2A (70°C), VIN = 1.5V
290
330
Burst Mode Operation Switch Current Limit
(LT1308A)
VIN = 2.5V, Circuit of Figure 1
400
700
kHz
%
mA
LT1308A/LT1308B
ELECTRICAL CHARACTERISTICS
The ● denotes specifications which apply over the full operating temperature range, otherwise specifications are TA = 25°C.
Commercial Grade 0°C to 70°C. VIN = 1.1V, VSHDN = VIN, unless otherwise noted.
SYMBOL PARAMETER
Shutdown Pin Current
CONDITIONS
VSHDN = 1.1V
VSHDN = 6V
VSHDN = 0V
MIN
●
●
●
LBI Threshold Voltage
●
196
194
TYP
MAX
UNITS
2
20
0.01
5
35
0.1
µA
µA
µA
200
200
204
206
mV
mV
LBO Output Low
ISINK = 50µA
●
0.1
0.25
V
LBO Leakage Current
VLBI = 250mV, VLBO = 5V
●
0.01
0.1
µA
LBI Input Bias Current (Note 5)
VLBI = 150mV
33
100
Low-Battery Detector Gain
Switch Leakage Current
3000
VSW = 5V
0.01
●
nA
V/V
10
µA
The ● denotes specifications which apply over the full operating temperature range, otherwise specifications are TA = 25°C.
Industrial Grade – 40°C to 85°C. VIN = 1.2V, VSHDN = VIN, unless otherwise noted.
SYMBOL PARAMETER
CONDITIONS
MIN
IQ
Quiescent Current
Not Switching, LT1308A
Switching, LT1308B
VSHDN = 0V (LT1308A/LT1308B)
VFB
Feedback Voltage
IB
FB Pin Bias Current
(Note 3)
●
27
80
nA
Reference Line Regulation
1.1V ≤ VIN ≤ 2V
2V ≤ VIN ≤ 10V
●
●
0.05
0.01
0.4
0.2
%/V
%/V
0.92
1
●
●
●
●
1.19
Minimum Input Voltage
∆I = 5µA
TYP
MAX
UNITS
140
2.5
0.01
240
4
1
µA
mA
µA
1.22
1.25
V
V
60
µmhos
100
V/V
gm
Error Amp Transconductance
AV
Error Amp Voltage Gain
fOSC
Switching Frequency
●
500
600
Maximum Duty Cycle
●
82
90
2
3
4.5
A
350
400
mV
mV
Switch Current Limit
Duty Cyle = 30% (Note 4)
Switch VCESAT
ISW = 2A (25°C, – 40°C), VIN = 1.5V
ISW = 2A (85°C), VIN = 1.5V
290
330
Burst Mode Operation Switch Current Limit
(LT1308A)
VIN = 2.5V, Circuit of Figure 1
400
Shutdown Pin Current
VSHDN = 1.1V
VSHDN = 6V
VSHDN = 0V
●
●
LBI Threshold Voltage
●
196
193
750
kHz
%
mA
2
20
0.01
5
35
0.1
µA
µA
µA
200
200
204
207
mV
mV
0.25
V
LBO Output Low
ISINK = 50µA
●
0.1
LBO Leakage Current
VLBI = 250mV, VLBO = 5V
●
0.01
0.1
µA
LBI Input Bias Current (Note 5)
VLBI = 150mV
33
100
nA
Low-Battery Detector Gain
Switch Leakage Current
3000
VSW = 5V
●
0.01
V/V
10
µA
3
LT1308A/LT1308B
ELECTRICAL CHARACTERISTICS
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: The LT1308ACS8 and LT1308BCS8 are designed, characterized
and expected to meet the industrial temperature limits, but are not tested
at –40°C and 85°C. I grade devices are guaranteed.
Note 3: Bias current flows into FB pin.
Note 4: Switch current limit guaranteed by design and/or correlation to
static tests. Duty cycle affects current limit due to ramp generator (see
Block Diagram).
Note 5: Bias current flows out of LBI pin.
Note 6: Connect the four GND pins (Pins 4–7) together at the device.
Similarly, connect the three SW pins (Pins 8–10) together and the two VIN
pins (Pins 11, 12) together at the device.
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TYPICAL PERFORMANCE CHARACTERISTICS
LT1308B
3.3V Output Efficiency
V IN = 1.8V
85
80
V IN = 1.2V
75
95
90
90
V IN = 1.8V
85
EFFICIENCY (%)
EFFICIENCY (%)
V IN = 2.5V
95
70
65
V IN = 2.5V
80
75
V IN = 1.2V
70
65
65
60
55
55
50
50
1
100
10
LOAD CURRENT (mA)
1308A/B G01
V IN = 2.5V
70
60
1000
V IN = 1.5V
75
55
100
10
LOAD CURRENT (mA)
V IN = 3.6V
80
60
1
V IN = 4.2V
85
EFFICIENCY (%)
95
90
LT1308A
5V Output Efficiency
LT1308A
3.3V Output Efficiency
50
1000
1
10
100
LOAD CURRENT (mA)
1000
1308A/B G02
1308A/B G03
LT1308B
12V Output Efficiency
Switch Saturation Voltage
vs Current
LT1308A Transient Response
Circuit of Figure 1
90
500
V IN = 5V
EFFICIENCY (%)
VOUT
100mV/DIV
AC COUPLED
V IN = 3.3V
80
75
ILOAD
70
65
400
1A
0A
VIN = 3.6V
VOUT = 5V
COUT = 220µF
60
SWITCH VCESAT (mV)
85
100µs/DIV
1308 G05
85°C
300
25°C
200
–40°C
100
55
50
1
10
100
LOAD CURRENT (mA)
1000
0
0
1.0
0.5
1.5
SWITCH CURRENT (A)
2.0
1308A/B G04
1308 G06
4
LT1308A/LT1308B
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PIN FUNCTIONS
VC (Pin 1): Compensation Pin for Error Amplifier. Connect a series RC from this pin to ground. Typical values
are 47kΩ and 100pF. Minimize trace area at VC.
SW (Pin 5): Switch Pin. Connect inductor/diode here.
Minimize trace area at this pin to keep EMI down.
VIN (Pin 6): Supply Pin. Must have local bypass capacitor
right at the pin, connected directly to ground.
FB (Pin 2): Feedback Pin. Reference voltage is 1.22V.
Connect resistive divider tap here. Minimize trace area at
FB. Set VOUT according to: VOUT = 1.22V(1 + R1/R2).
LBI (Pin 7): Low-Battery Detector Input. 200mV reference. Voltage on LBI must stay between –100mV and 1V.
Low-battery detector does not function with SHDN pin
grounded. If not used, float LBI pin.
SHDN (Pin 3): Shutdown. Ground this pin to turn off
switcher. To enable, tie to 1V or more. SHDN does not
need to be at VIN to enable the device.
LBO (Pin 8): Low-Battery Detector Output. Open collector, can sink 50µA. A 1MΩ pull-up is recommended. LBO
is high impedance when SHDN is grounded.
GND (Pin 4): Ground. Connect directly to local ground
plane. Ground plane should enclose all components
associated with the LT1308. PCB copper connected to
Pin 4 also functions as a heat sink. Maximize this area to
keep chip heating to a minimum.
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BLOCK DIAGRAM
VIN
VIN
6
R5
40k
R6
40k
2VBE
Q4
VIN
SHDN
+
gm
VOUT
R1
(EXTERNAL)
FB
R2
(EXTERNAL)
Q1
Q2
×10
LBI
+
ERROR
AMPLIFIER
BIAS
–
+
7
*
R3
30k
R4
140k
3
1
–
FB
2
SHUTDOWN
VC
A1
LBO
8
ENABLE
–
200mV
A4
SW
COMPARATOR
–
RAMP
GENERATOR
+
Σ
+
DRIVER
FF
A2
Q3
Q
R
+
5
S
+
A=3
600kHz
OSCILLATOR
0.03Ω
–
*HYSTERESIS IN LT1308A ONLY
4
GND
1308 BD
Figure 2. LT1308A/LT1308B Block Diagram
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LT1308A/LT1308B
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APPLICATIONS INFORMATION
OPERATION
The LT1308A combines a current mode, fixed frequency
PWM architecture with Burst Mode micropower operation
to maintain high efficiency at light loads. Operation can be
best understood by referring to the block diagram in Figure
2. Q1 and Q2 form a bandgap reference core whose loop
is closed around the output of the converter. When VIN is
1V, the feedback voltage of 1.22V, along with an 80mV
drop across R5 and R6, forward biases Q1 and Q2’s base
collector junctions to 300mV. Because this is not enough
to saturate either transistor, FB can be at a higher voltage
than VIN. When there is no load, FB rises slightly above
1.22V, causing VC (the error amplifier’s output) to
decrease. When VC reaches the bias voltage on hysteretic
comparator A1, A1’s output goes low, turning off all
circuitry except the input stage, error amplifier and lowbattery detector. Total current consumption in this state is
120µA. As output loading causes the FB voltage to
decrease, A1’s output goes high, enabling the rest of the
IC. Switch current is limited to approximately 400mA
initially after A1’s output goes high. If the load is light, the
output voltage (and FB voltage) will increase until A1’s
output goes low, turning off the rest of the LT1308A. Low
frequency ripple voltage appears at the output. The ripple
frequency is dependent on load current and output capacitance. This Burst Mode operation keeps the output regulated and reduces average current into the IC, resulting in
high efficiency even at load currents of 1mA or less.
If the output load increases sufficiently, A1’s output
remains high, resulting in continuous operation. When the
LT1308A is running continuously, peak switch current is
controlled by VC to regulate the output voltage. The switch
is turned on at the beginning of each switch cycle. When
the summation of a signal representing switch current and
a ramp generator (introduced to avoid subharmonic oscillations at duty factors greater than 50%) exceeds the VC
signal, comparator A2 changes state, resetting the flip-flop
and turning off the switch. Output voltage increases as
switch current is increased. The output, attenuated by a
resistor divider, appears at the FB pin, closing the overall
loop. Frequency compensation is provided by an external
series RC network connected between the VC pin and
ground.
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Low-battery detector A4’s open-collector output (LBO)
pulls low when the LBI pin voltage drops below 200mV.
There is no hysteresis in A4, allowing it to be used as an
amplifier in some applications. The entire device is disabled when the SHDN pin is brought low. To enable the
converter, SHDN must be at 1V or greater. It need not be
tied to VIN as on the LT1308.
The LT1308B differs from the LT1308A in that there is no
hysteresis in comparator A1. Also, the bias point on A1 is
set lower than on the LT1308B so that switching can occur
at inductor current less than 100mA. Because A1 has no
hysteresis, there is no Burst Mode operation at light loads
and the device continues switching at constant frequency.
This results in the absence of low frequency output voltage
ripple at the expense of efficiency.
The difference between the two devices is clearly illustrated in Figure 3. The top two traces in Figure 3 shows an
LT1308A/LT1308B circuit, using the components indicated in Figure 1, set to a 5V output. Input voltage is 3V.
Load current is stepped from 50mA to 800mA for both
circuits. Low frequency Burst Mode operation voltage
ripple is observed on Trace A, while none is observed on
Trace B.
At light loads, the LT1308B will begin to skip alternate
cycles. The load point at which this occurs can be decreased by increasing the inductor value. However, output
ripple will continue to be significantly less than the LT1308A
output ripple. Further, the LT1308B can be forced into
micropower mode, where IQ falls from 3mA to 200µA by
sinking 40µA or more out of the VC pin. This stops
switching by causing A1’s output to go low.
TRACE A: LT1308A
VOUT, 100mV/DIV
AC COUPLED
TRACE B: LT1308B
VOUT, 100mV/DIV
AC COUPLED
800mA
ILOAD
50mA
VIN = 3V
200µs/DIV
(CIRCUIT OF FIGURE 1)
1308 F03
Figure 3. LT1308A Exhibits Burst Mode Operation Output
Voltage Ripple at 50mA Load, LT1308B Does Not
LT1308A/LT1308B
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APPLICATIONS INFORMATION
LAYOUT HINTS
Table 1
The LT1308A/LT1308B switch current at high speed, mandating careful attention to layout for proper performance.
You will not get advertised performance with careless
layouts. Figure 4 shows recommended component placement for a boost (step-up) converter. Follow this closely in
your PC layout. Note the direct path of the switching loops.
Input capacitor C1 must be placed close (< 5mm) to the IC
package. As little as 10mm of wire or PC trace from CIN to
VIN will cause problems such as inability to regulate or
oscillation.
VENDOR
PART NO.
VALUE
PHONE NO.
Murata
LQH6C4R7
4.7µH
770-436-1300
Sumida
CDRH734R7
4.7µH
847-956-0666
CTX5-1
5µH
561-241-7876
The negative terminal of output capacitor C2 should tie
close to Pin 4 of the LT1308A/LT1308B. Doing this
reduces dI/dt in the ground copper which keeps high
frequency spikes to a minimum. The DC/DC converter
ground should tie to the PC board ground plane at one
place only, to avoid introducing dI/dt in the ground plane.
The output capacitors specified for use with the LT1308A/
LT1308B circuits have low ESR and are specifically
designed for power supply applications. Output voltage
ripple of a boost converter is equal to ESR multiplied by
switch current. The performance of the AVX TPSD227M006
220µF tantalum can be evaluated by referring to Figure 4.
When the load is 800mA, the peak switch current is
approximately 2A. Output voltage ripple is about 60mVPP, so the ESR of the output capacitor is 60mV/2A or 0.03Ω.
Ripple can be further reduced by paralleling ceramic units.
A SEPIC (Single-Ended Primary Inductance Converter)
schematic is shown in Figure 5. This converter topology
produces a regulated output over an input voltage range
that spans (i.e., can be higher or lower than) the output.
Recommended component placement for a SEPIC is
shown in Figure 6.
Coiltronics
Capacitors
Equivalent Series Resistance (ESR) is the main issue
regarding selection of capacitors, especially the output
capacitors.
Table 2 lists some capacitors we have found to perform
well in the LT1308A/LT1308B application circuits. This is
not an exclusive list.
COMPONENT SELECTION
Table 2
Inductors
VENDOR
Suitable inductors for use with the LT1308A/LT1308B
must fulfill two requirements. First, the inductor must be
able to handle current of 2A steady-state, as well as
support transient and start-up current over 3A without
inductance decreasing by more than 50% to 60%. Second,
the DCR of the inductor should have low DCR, under 0.05Ω
so that copper loss is minimized. Acceptable inductance
values range between 2µH and 20µH, with 4.7µH best for
most applications. Lower value inductors are physically
smaller than higher value inductors for the same current
capability.
SERIES
PART NO.
VALUE
PHONE NO.
AVX
TPS
TPSD227M006
220µF, 6V
803-448-9411
AVX
TPS
TPSD107M010
100µF, 10V 803-448-9411
Taiyo Yuden
X5R
LMK432BJ226
22µF, 10V
408-573-4150
Taiyo Yuden
X5R
TMK432BJ106
10µF, 25V
408-573-4150
Diodes
We have found Motorola MBRS130 and International
Rectifier 10BQ015 to perform well. For applications where
VOUT exceeds 30V, use 40V diodes such as MBRS140 or
10BQ040.
Table 1 lists some inductors we have found to perform well
in LT1308A/LT1308B application circuits. This is not an
exclusive list.
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LT1308A/LT1308B
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APPLICATIONS INFORMATION
LBI LBO
GROUND PLANE
C1
+
VIN
3V TO
10V
VIN
+
R1
1
R2
SHUTDOWN
2
3
8
LT1308A
LT1308B
VIN
SHUTDOWN
L1
SW
SHDN
R2
100k
47k
680pF
+
C3
220µF
6.3V
D1
C2
C1: AVX TAJC476M016
C2: TAIYO YUDEN EMK325BJ475(X5R)
C3: AVX TPSD227M006
VOUT
Figure 4. Recommended Component Placement for Boost
Converter. Note Direct High Current Paths Using Wide PC
Traces. Minimize Trace Area at Pin 1 (VC) and Pin 2 (FB).
Use Multiple Vias to Tie Pin 4 Copper to Ground Plane. Use
Vias at One Location Only to Avoid Introducing Switching
Currents into the Ground Plane
LBI LBO
GROUND PLANE
C1
R1
+
1
R2
2
3
SHUTDOWN
VIN
8
LT1308A
LT1308B
7
6
L1A
L1B
5
4
MULTIPLE
VIAs
D1: IR 10BQ015
L1: COILTRONICS CTX10-2
Figure 5. SEPIC (Single-Ended Primary
Inductance Converter) Converts 3V to 10V
Input to a 5V/500mA Regulated Output
1308 F04
C3
C2
+
GND
D1
VOUT
Figure 6. Recommended Component Placement for SEPIC
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VOUT
5V
500mA
FB
GND
+
MULTIPLE
VIAs
R1
309k
LT1308B
VC
6
D1
L1B
C1
47µF
5
4
GND
7
C2
4.7µF
CERAMIC
L1A
CTX10-2
1308 F06
1308A/B F05
LT1308A/LT1308B
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APPLICATIONS INFORMATION
SHDN PIN
START-UP
The LT1308A/LT1308B SHDN pin is improved over the
LT1308. The pin does not require tying to VIN to enable the
device, but needs only a logic level signal. The voltage on
the SHDN pin can vary from 1V to 10V independent of VIN.
Further, floating this pin has the same effect as grounding,
which is to shut the device down, reducing current drain
to 1µA or less.
The LT1308A/LT1308B can start up into heavy loads,
unlike many CMOS DC/DC converters that derive operating voltage from the output (a technique known as
“bootstrapping”). Figure 10 details start-up waveforms of
Figure 1’s circuit with a 20Ω load and VIN of 1.5V. Inductor
current rises to 3.5A as the output capacitor is charged.
After the output reaches 5V, inductor current is about 1A.
In Figure 11, the load is 5Ω and input voltage is 3V. Output
voltage reaches 5V 500µs after the device is enabled.
Figure 12 shows start-up behavior of Figure 5’s SEPIC
circuit, driven from a 9V input with a 10Ω load. The output
reaches 5V in about 1ms after the device is enabled.
LOW-BATTERY DETECTOR
The low-battery detector on the LT1308A/LT1308B features improved accuracy and drive capability compared to
the LT1308. The 200mV reference has an accuracy of ±2%
and the open-collector output can sink 50µA. The LT1308A/
LT1308B low-battery detector is a simple PNP input gain
stage with an open-collector NPN output. The negative
input of the gain stage is tied internally to a 200mV
reference. The positive input is the LBI pin. Arrangement
as a low-battery detector is straightforward. Figure 7
details hookup. R1 and R2 need only be low enough in
value so that the bias current of the LBI pin doesn’t cause
large errors. For R2, 100k is adequate. The 200mV reference can also be accessed as shown in Figure 8.
A cross plot of the low-battery detector is shown in
Figure 9. The LBI pin is swept with an input which varies
from 195mV to 205mV, and LBO with a 100k pull-up
resistor, is displayed.
GSM AND CDMA PHONES
The LT1308A/LT1308B are suitable for converting a single
Li-Ion cell to 5V for powering RF power stages in GSM or
CDMA phones. Improvements in the LT1308A/LT1308B
error amplifiers allow external compensation values to be
reduced, resulting in faster transient response compared
to the LT1308. The circuit of Figure 13 (same as Figure 1,
printed again for convenience) provides a 5V, 1A output
from a Li-Ion cell. Figure 14 details transient response at
the LT1308A operating at a VIN of 4.2V, 3.6V and 3V.
Ripple voltage in Burst Mode operation can be seen at
10mA load. Figure 15 shows transient response of the
LT1308B under the same conditions. Note the lack of
Burst Mode ripple at 10mA load.
5V
R1
VIN
LBI
+
LT1308A
LT1308B
100k
200k
LBO
R2
100k
VBAT
TO PROCESSOR
2N3906
VIN
LBO
VBAT
–
VREF
200mV
200mV
INTERNAL
REFERENCE
GND
R1 =
VLB – 200mV
2µA
1308 F07
LBI
+
10k
10µF
LT1308A
LT1308B
GND
1308 F08
Figure 8. Accessing 200mV Reference
Figure 7. Setting Low-Battery Detector Trip Point
9
LT1308A/LT1308B
U
W
U
U
APPLICATIONS INFORMATION
VOUT
1V/DIV
VLBO
1V/DIV
IL1
2A/DIV
195
200
VLBI (mV)
VSHDN
5V/DIV
205
500µs/DIV
1308 F09
1308 F11
Figure 11. 5V Boost Converter of Figure 1.
Start-Up from 3V Input into 5Ω Load
Figure 9. Low-Battery Detector
Input/Output Characteristic
VOUT
2V/DIV
VOUT
2V/DIV
IL1
1A/DIV
ISW
2A/DIV
VSHDN
5V/DIV
VSHDN
5V/DIV
1ms/DIV
500µs/DIV
1308 F10
1308 F12
Figure 10. 5V Boost Converter of Figure 1.
Start-Up from 1.5V Input into 20Ω Load
Figure 12. 5V SEPIC Start-Up from
9V Input into 10Ω Load
L1
4.7µH
+
Li-Ion
CELL
VIN
C1
47µF
SHUTDOWN
D1
5V
1A
SW
LBO
LBI
LT1308B
SHDN
VC
R1
309k
FB
GND
47k
+
C2
220µF
R2
100k
100pF
C1: AVX TAJC476M010
C2: AVX TPSD227M006
D1: IR 10BQ015
L1: MURATA LQH6N4R7
1308A/B F13
Figure 13. Li-Ion to 5V Boost Converter Delivers 1A
10
LT1308A/LT1308B
U
U
W
U
APPLICATIONS INFORMATION
VOUT
VIN = 4.2V
VOUT
VIN = 4.2V
VOUT
VIN = 3.6V
VOUT
VIN = 3.6V
VOUT
VIN = 3V
ILOAD
1A
10mA
VOUT
VIN = 3V
ILOAD
1A
10mA
VOUT TRACES =
200mV/DIV
200µs/DIV
1308 F14
Figure 14. LT1308A Li-Ion to 5V Boost Converter
Transient Response to 1A Load Step
U
PACKAGE DESCRIPTION
VOUT TRACES =
200mV/DIV
100µs/DIV
1308 F15
Figure 15. LT1308B Li-Ion to 5V Boost
Converter Transient Response to 1A Load Step
Dimensions in inches (millimeters) unless otherwise noted.
F Package
14-Lead Plastic TSSOP (4.4mm)
(LTC DWG # 05-08-1650)
4.90 – 5.10*
(0.193 – 0.201)
14 13 12 11 10 9 8
6.25 – 6.50
(0.246 – 0.256)
1 2 3 4 5 6 7
1.10
(0.0433)
MAX
4.30 – 4.48**
(0.169 – 0.176)
0° – 8°
0.09 – 0.18
(0.0035 – 0.0071)
0.50 – 0.70
(0.020 – 0.028)
0.65
(0.0256)
BSC
0.18 – 0.30
(0.0071 – 0.0118)
0.05 – 0.15
(0.002 – 0.006)
F14 TSSOP 1299
NOTE: DIMENSIONS ARE IN MILLIMETERS
*DIMENSIONS DO NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED 0.152mm (0.006") PER SIDE
**DIMENSIONS DO NOT INCLUDE INTERLEAD FLASH. INTERLEAD
FLASH SHALL NOT EXCEED 0.254mm (0.010") PER SIDE
11
LT1308A/LT1308B
U
TYPICAL APPLICATION
SEPIC Converts 3V to 10V Input to a 5V/500mA Regulated Output
C2
4.7µF
CERAMIC
L1A
CTX10-2
VIN
3V TO
10V
+
VIN
3.3V to 12V/300mA Step-Up DC/DC Converter
L1
4.7µH
D1
SW
+
L1B
C1
47µF
R1
309k
LT1308B
SHUTDOWN
SHDN
VOUT
5V
500mA
FB
GND
VC
R2
100k
47k
+
D1: IR 10BQ015
L1: COILTRONICS CTX10-2
U
PACKAGE DESCRIPTION
12V
300mA
SW
LBO
LBI
LT1308B
SHUTDOWN
SHDN
VC
R1
887k
FB
GND
+
C2
100µF
R2
100k
47k
C3
220µF
6.3V
680pF
C1: AVX TAJC476M016
C2: TAIYO YUDEN EMK325BJ475(X5R)
C3: AVX TPSD227M006
Li-Ion
CELL
VIN
C1
47µF
D1
100pF
C1: AVX TAJC476M010
C2: AVX TPSD107M016
D1: IR 10BQ015
1308A/B F05
L1: MURATA LQH6N4R7
1308A/B TA01
Dimensions in inches (millimeters) unless otherwise noted.
S8 Package
8-Lead Plastic Small Outline (Narrow 0.150)
(LTC DWG # 05-08-1610)
0.010 – 0.020
× 45°
(0.254 – 0.508)
0.008 – 0.010
(0.203 – 0.254)
8
0.053 – 0.069
(1.346 – 1.752)
0.014 – 0.019
(0.355 – 0.483)
TYP
*DIMENSION DOES NOT INCLUDE MOLD FLASH. MOLD FLASH
SHALL NOT EXCEED 0.006" (0.152mm) PER SIDE
**DIMENSION DOES NOT INCLUDE INTERLEAD FLASH. INTERLEAD
FLASH SHALL NOT EXCEED 0.010" (0.254mm) PER SIDE
7
6
5
0.004 – 0.010
(0.101 – 0.254)
0°– 8° TYP
0.016 – 0.050
(0.406 – 1.270)
0.189 – 0.197*
(4.801 – 5.004)
0.050
(1.270)
BSC
0.150 – 0.157**
(3.810 – 3.988)
0.228 – 0.244
(5.791 – 6.197)
1
3
2
4
SO8 1298
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DESCRIPTION
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LT1615
Micropower Step-Up DC/DC in 5-Lead SOT-23
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LTC1682
Doubler Charge Pump with Low Noise LDO
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12
Linear Technology Corporation
1308abis, sn1308ab LT/TP 0899 4K • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408)432-1900 ● FAX: (408) 434-0507 ● www.linear-tech.com
 LINEAR TECHNOLOGY CORPORATION 1999